Abstract

We report a wafer fused high-power optically-pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 µm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers.

© 2008 Optical Society of America

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999).
    [CrossRef]
  2. W. J. Alford, T. D. Raymond, and A. A. Allerman, "High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser," J. Opt. Soc. Am. B 19, 663-666 (2002).
    [CrossRef]
  3. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
    [CrossRef]
  4. L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
    [CrossRef]
  5. J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, "2.7 W tunable orange-red GaInNAs semiconductor disk laser," Opt. Express 15, 18345-18350 (2007).
    [CrossRef] [PubMed]
  6. J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
    [CrossRef]
  7. H. Lindberg, A. Larsson, and M. Strassner, "Single-frequency operation of a high-power, long-wavelength semiconductor disk laser," Opt. Lett. 30, 17, 2260-2262 (2005).
    [CrossRef] [PubMed]
  8. Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
    [CrossRef]
  9. A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
    [CrossRef]
  10. G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
    [CrossRef]
  11. A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
    [CrossRef]
  12. A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
    [CrossRef]
  13. R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
    [CrossRef]
  14. N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
    [CrossRef]
  15. Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
    [CrossRef]

2008 (1)

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

2007 (2)

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, "2.7 W tunable orange-red GaInNAs semiconductor disk laser," Opt. Express 15, 18345-18350 (2007).
[CrossRef] [PubMed]

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

2006 (1)

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

2005 (1)

2004 (1)

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

2003 (1)

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

2002 (1)

2000 (1)

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

1999 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

1998 (2)

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
[CrossRef]

1997 (2)

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

1995 (1)

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Abraham, P.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

Achtenhagen, M.

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Albrecht, T.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Alford, W. J.

Allerman, A. A.

Amano, C.

Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
[CrossRef]

Babic, D. I.

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

Bedford, R.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Berseth, C.-A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Black, A.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

Bouchoule, S.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Bowers, J. E.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Brick, P.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Caliman, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Carey, K.

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Chang, Y.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

Debray, J. P.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Decobert, J.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Dudley, J. J.

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Fallahi, M.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Fan, L.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Guina, M.

Hader, J.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

Härkönen, A.

Harmand, J. C.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Harmand, J-C.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Hawkins, A. R.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

Holmes, A. L.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

Hsu, T.-C.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Hu, E. L.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

Iakovlev, V.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Itoh, Y.

Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
[CrossRef]

Kaneda, Y.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Kapon, E.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Khadour, A.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Koch, S. W.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Korpijärvi, V.-M.

Kurokawa, T.

Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

Lafosse, X.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Lagay, N.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Larsson, A.

Leroy, L.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Liau, Z. L.

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

Lindberg, H.

Luft, J.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Lutgen, S.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Margalit, N. M.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

Mariadec, C.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Mereuta, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Miard, A.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Mircea, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Mirin, R. P.

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

Moloney, J. V.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

Murray, J. T.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Nauka, K.

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Ohiso, Y.

Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
[CrossRef]

Okhotnikov, O. G.

Oudar, J. L.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Oudar, J-C.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Piprek, J.

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

Raj, R.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Ram, R. J.

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Rautiainen, J.

Raymond, T. D.

Reill, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Rivera, T.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Rosner, S. J.

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Royo, P.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

Rudra, A.

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Sagnes, I.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Sermage, B.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Späth, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

Stolz, W.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Strassner, M.

Streubel, K.

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

Suruceanu, G.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Syrbu, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

Takenouchi, H.

Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
[CrossRef]

Tourrenc, J-P.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

Tuomisto, P.

Ungaro, G.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

Wesselmann, J. R.

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

Yang, L.

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

Zakharian, A. R.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Zhang, S.

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

Appl. Phys. Lett. (3)

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Electron. Lett. (1)

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998).
[CrossRef]

IEEE J. Quantum Electron. (2)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997).
[CrossRef]

N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004).
[CrossRef]

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007).
[CrossRef]

J. Appl Phys. (1)

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995).
[CrossRef]

J. Opt. Soc. Am. B (1)

Opt. Express (1)

Opt. Lett. (1)

Opt. Quantum Electron. (1)

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008).
[CrossRef]

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Figures (5)

Fig. 1.
Fig. 1.

Gain structure of the semiconductor disk laser.

Fig. 2.
Fig. 2.

Cavity of the semiconductor disk laser. The temperature of the gain mirror is kept at the desired value with a Peltier element attached to a water cooled heat sink.

Fig. 3.
Fig. 3.

Output characteristics for different operating temperatures.

Fig. 4.
Fig. 4.

Threshold pump power and slope efficiency as a function of gain mirror temperature. The T0 parameter was deduced from the exponential fit of the threshold pump power.

Fig. 5.
Fig. 5.

Optical spectra observed at different heat-sink temperatures. Pump power at 980 nm is kept at the value of 10.9 W for all measurements. The center wavelength red shift is ~0.42 nm/°C. Inset: Output beam profile measured with pyrocamera.

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