We present analysis and simulation of novel silicon-on-insulator (SOI) heterogeneous waveguides with thermo-optic phase shifters. New structure design contains a p-n junction on both sides of SOI ridge waveguide with 220 nm×35 µm silicon core. Strongly mode-dependent optical losses (by additional free charge absorption) provide quasi-singe-mode behavior of wide waveguide with mode size ~10 µm. Local heater produces an efficient phase shifting by small temperature increase (ΔT~2K), switching power (<40 mW) and switching time (<10 µs). Mode optical losses are significantly decreased at high heating (ΔT~120 K).
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