Abstract

We demonstrated ultra-wide input power range receivers for noise-loaded WDM applications without using optical variable attenuators. Required OSNR at 6E-5 BER exhibited less than 1dB variation across receiver input power range from -22dBm to +4Bm.

©2008 Optical Society of America

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References

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  1. G. P. Agrawal, Fiber–optics communication systems, 2nd ed. (Academic, New York, 1995).
  2. M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
    [Crossref]
  3. P. Sun, M. M. Hayat, B. A. Saleh, and M. C. Teich, “Statistical correlation of gain and buildup time in APDs and its effects on receiver performance,” J. Lightwave Technol. 24, 755–768 (2006).
    [Crossref]
  4. T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

2006 (1)

2001 (1)

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Agrawal, G. P.

G. P. Agrawal, Fiber–optics communication systems, 2nd ed. (Academic, New York, 1995).

Campbell, J. C.

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Fukada, Y.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Hayat, M. M.

P. Sun, M. M. Hayat, B. A. Saleh, and M. C. Teich, “Statistical correlation of gain and buildup time in APDs and its effects on receiver performance,” J. Lightwave Technol. 24, 755–768 (2006).
[Crossref]

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Holms, A. L.

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Kato, K.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Nakamura, M.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Nakanishi, T.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Nishimura, K.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Ootomo, Y.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Saleh, B. A.

P. Sun, M. M. Hayat, B. A. Saleh, and M. C. Teich, “Statistical correlation of gain and buildup time in APDs and its effects on receiver performance,” J. Lightwave Technol. 24, 755–768 (2006).
[Crossref]

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Saleh, M.

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Sotirelis, P. P.

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Sun, P.

Suzuki, K–I.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Teich, M. C.

P. Sun, M. M. Hayat, B. A. Saleh, and M. C. Teich, “Statistical correlation of gain and buildup time in APDs and its effects on receiver performance,” J. Lightwave Technol. 24, 755–768 (2006).
[Crossref]

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

Tsubokawa, M.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

Yoshimoto, N.

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

IEEE Trans. Electron Devices (1)

M. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holms, J. C. Campbell, B. A. Saleh, and M. C. Teich, “Impact ionization and noise characteristics of thin III–V avalanche photodiodes,” IEEE Trans. Electron Devices,  48, 2722–2731 (2001).
[Crossref]

J. Lightwave Technol. (1)

Other (2)

T. Nakanishi, Y. Fukada, K–I. Suzuki, N. Yoshimoto, M. Nakamura, K. Kato, K. Nishimura, Y. Ootomo, and M. Tsubokawa, “Wide dynamic range and high sensitivity APD burst receiver configuration based on M–switching technique for 10G–EPON system,” LEOS2007, paper MH2, October 2007.

G. P. Agrawal, Fiber–optics communication systems, 2nd ed. (Academic, New York, 1995).

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Figures (6)

Fig. 1.
Fig. 1. Simulated M-factor and SNR for the APD chip use in this work as a function of input powers.
Fig. 2.
Fig. 2. Experimental setup. SW: switch, OSA: optical spectrum analyzer, ASE: amplified spontaneous emission, Tx: transmitter, Rx: receiver
Fig. 3.
Fig. 3. Receiver output eye at receiver input power levels of -27dBm, -10dBm, +3.8dBm (the input eye is NRZ signal at 30dB OSNR at 10.7Gb/s).
Fig. 4.
Fig. 4. Back-to-back OSNR at various receiver input powers
Fig. 5.
Fig. 5. Over-fiber OSNR at various receiver input powers
Fig. 6.
Fig. 6. BER as a function of receiver decision threshold level for BB at various receiver input powers

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