Abstract

We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 µm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.

© 2008 Optical Society of America

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  1. N. A. Nassif, B. Cense, B. H. Park, M. C. Pierce, S. H. Yun, B. E. Bouma, G. J. Tearney, T. C. Chen, and J. F. de Boer, "In vivo high-resolution video-rate spectral-domain optical coherence tomography of the human retina and optic nerve," Opt. Express 12,367-376 (2004), http://www.opticsexpress.org/abstract.cfm?uri=oe-12-3-367.
    [CrossRef] [PubMed]
  2. E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
    [CrossRef]
  3. C.-F. Lin and B.-L. Lee, "Extremely broadband AlGaAs/GaAs superluminescent diodes," Appl. Phys. Lett. 71,1958-1600 (1997).
    [CrossRef]
  4. C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Tech. Lett. 16,1441-1443 (2004).
    [CrossRef]
  5. S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
    [CrossRef]
  6. Y. C. Yoo, I. K. Han, and J. I. Lee, "High power broadband superluminescent diodes with chirped multiple quantum dots," Electron. Lett. 43, 1045-1046 (2007).
    [CrossRef]
  7. Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
    [CrossRef]
  8. S. Murata, M. Arai, and K. Oe, "Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits," IEEE J. Sel. Top. Quantum Electron. 8,1366-1371 (2002).
    [CrossRef]
  9. J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
    [CrossRef]
  10. S.-H. Guol, J.-W. Shi, Y.-Y. Chen, J.-H. Wang, W. Lin, T.-J. Yang, and C.-K. Sun, "Flatten and invariant broadband spectra of transverse junction light-emitting diodes under a large range of bias current at 1.06μm wavelengths," in Proceedings of IEEE Conference on Lasers and Electro-Optics Society (LEOS) (IEEE, 2007), pp. 586-587.
  11. Y. Wang, J. S. Nelson, Z.-P. Chen, B. Reiser, R. Chuck, and R. Windeler, "Optimal wavelength for ultrahigh-resolution optical coherence tomography," Opt. Express 11,1411-1417 (2003), http://www.opticsexpress.org/abstract.cfm?URI=OPEX-11-12-1411.
    [CrossRef] [PubMed]
  12. A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
    [CrossRef]
  13. M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
    [CrossRef]
  14. J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
    [CrossRef]
  15. http://www.qphotonics.com.

2008 (1)

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

2007 (1)

Y. C. Yoo, I. K. Han, and J. I. Lee, "High power broadband superluminescent diodes with chirped multiple quantum dots," Electron. Lett. 43, 1045-1046 (2007).
[CrossRef]

2006 (3)

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

2005 (1)

M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
[CrossRef]

2004 (2)

N. A. Nassif, B. Cense, B. H. Park, M. C. Pierce, S. H. Yun, B. E. Bouma, G. J. Tearney, T. C. Chen, and J. F. de Boer, "In vivo high-resolution video-rate spectral-domain optical coherence tomography of the human retina and optic nerve," Opt. Express 12,367-376 (2004), http://www.opticsexpress.org/abstract.cfm?uri=oe-12-3-367.
[CrossRef] [PubMed]

C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Tech. Lett. 16,1441-1443 (2004).
[CrossRef]

2003 (1)

2002 (1)

S. Murata, M. Arai, and K. Oe, "Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits," IEEE J. Sel. Top. Quantum Electron. 8,1366-1371 (2002).
[CrossRef]

1997 (1)

C.-F. Lin and B.-L. Lee, "Extremely broadband AlGaAs/GaAs superluminescent diodes," Appl. Phys. Lett. 71,1958-1600 (1997).
[CrossRef]

1996 (1)

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

1986 (1)

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
[CrossRef]

Alexander, R.

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Arai, M.

S. Murata, M. Arai, and K. Oe, "Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits," IEEE J. Sel. Top. Quantum Electron. 8,1366-1371 (2002).
[CrossRef]

Bang, Y. C.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Bouma, B. E.

Cense, B.

Chen, C.-C.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Chen, T. C.

Chen, Y.-Y.

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

Chen, Z.-P.

Chuck, R.

Chyi, J.-I.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Czotscher, K.

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

de Boer, J. F.

Groom, K. M.

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Han, I. K.

Y. C. Yoo, I. K. Han, and J. I. Lee, "High power broadband superluminescent diodes with chirped multiple quantum dots," Electron. Lett. 43, 1045-1046 (2007).
[CrossRef]

Hogg, R. A.

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Hopkinson, M.

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Hsieh, K. Y.

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
[CrossRef]

Hung, T.-J.

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

Jang, D. H.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Kamioka, H.

M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
[CrossRef]

Kang, J. K.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Keh, Y. C.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Kennedy, K.

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Kim, I.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Kolbas, R. M.

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
[CrossRef]

Kuo, C.-H.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Lai, W.-C.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Larkins, E. C.

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

Lee, B.-L.

C.-F. Lin and B.-L. Lee, "Extremely broadband AlGaAs/GaAs superluminescent diodes," Appl. Phys. Lett. 71,1958-1600 (1997).
[CrossRef]

Lee, E. H.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Lee, G. S.

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
[CrossRef]

Lee, J. I.

Y. C. Yoo, I. K. Han, and J. I. Lee, "High power broadband superluminescent diodes with chirped multiple quantum dots," Electron. Lett. 43, 1045-1046 (2007).
[CrossRef]

Lee, J. K.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Lee, J. S.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Lin, C.-F.

C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Tech. Lett. 16,1441-1443 (2004).
[CrossRef]

C.-F. Lin and B.-L. Lee, "Extremely broadband AlGaAs/GaAs superluminescent diodes," Appl. Phys. Lett. 71,1958-1600 (1997).
[CrossRef]

Lin, C.-S.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Lin, W.

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

Liu, H. Y.

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Lo, Y. C.

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
[CrossRef]

Murata, S.

S. Murata, M. Arai, and K. Oe, "Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits," IEEE J. Sel. Top. Quantum Electron. 8,1366-1371 (2002).
[CrossRef]

Nassif, N. A.

Nelson, J. S.

Oe, K.

S. Murata, M. Arai, and K. Oe, "Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits," IEEE J. Sel. Top. Quantum Electron. 8,1366-1371 (2002).
[CrossRef]

Oh, Y. K.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Park, B. H.

Park, J. S.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Park, S. S.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Pierce, M. C.

Ralston, J. D.

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

Ray, S. K.

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Reiser, B.

Rosenzweig, J.

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

Schönfelder, A.

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

Sheu, J.-K.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Shi, J.-W.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

Shibata, Y.

M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
[CrossRef]

Shin, D. J.

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

Shmavonyan, G. S.

C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Tech. Lett. 16,1441-1443 (2004).
[CrossRef]

Su, Y.-S.

C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Tech. Lett. 16,1441-1443 (2004).
[CrossRef]

Sugo, M.

M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
[CrossRef]

Tearney, G. J.

Tohmori, Y.

M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
[CrossRef]

Tsao, F.-C.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Tun, C.-J.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Wang, C.-K.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Wang, Y.

Weisser, S.

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

Windeler, R.

Wu, C.-H.

C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Tech. Lett. 16,1441-1443 (2004).
[CrossRef]

Wu, T.-S.

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

Yamamoto, M.

M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
[CrossRef]

Yang, T.-H.

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

Yang, Y. J.

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
[CrossRef]

Yang, Y.-J.

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

Yoo, Y. C.

Y. C. Yoo, I. K. Han, and J. I. Lee, "High power broadband superluminescent diodes with chirped multiple quantum dots," Electron. Lett. 43, 1045-1046 (2007).
[CrossRef]

Yun, S. H.

Appl. Phys. Lett. (2)

C.-F. Lin and B.-L. Lee, "Extremely broadband AlGaAs/GaAs superluminescent diodes," Appl. Phys. Lett. 71,1958-1600 (1997).
[CrossRef]

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas, "Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering," Appl. Phys. Lett. 49,835-837 (1986).
[CrossRef]

Electron. Lett. (2)

Y. C. Yoo, I. K. Han, and J. I. Lee, "High power broadband superluminescent diodes with chirped multiple quantum dots," Electron. Lett. 43, 1045-1046 (2007).
[CrossRef]

M. Sugo, Y. Shibata, H. Kamioka, M. Yamamoto, and Y. Tohmori, "High-power (>80mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes," Electron. Lett. 41, 500-501 (2005).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

S. Murata, M. Arai, and K. Oe, "Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits," IEEE J. Sel. Top. Quantum Electron. 8,1366-1371 (2002).
[CrossRef]

IEEE Photon. Tech. Lett. (1)

C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Tech. Lett. 16,1441-1443 (2004).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

E. H. Lee, Y. C. Bang, J. K. Kang, Y. C. Keh, D. J. Shin, J. S. Lee, Park, S. S. Park, I. Kim, J. K. Lee, Y. K. Oh, and D. H. Jang, "Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON," IEEE Photon. Technol. Lett. 18, 667-669 (2006).
[CrossRef]

J.-W. Shi, T.-J. Hung, Y.-Y. Chen, T.-S. Wu, W. Lin, and Y.-J. Yang, "InP-Based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett. 18,2053-2055 (2006).
[CrossRef]

J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, "Phosphor-free GaN-based transverse junction white light-emitting diodes with re-grown n-type regions," IEEE Photon. Technol. Lett. 20, 449-451 (2008).
[CrossRef]

J. Appl. Phys. (2)

A. Schönfelder, J. D. Ralston, K. Czotscher, S. Weisser, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes," J. Appl. Phys. 80,582-584 (1996).
[CrossRef]

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode," J. Appl. Phys. 100,103-105 (2006).
[CrossRef]

Opt. Express (2)

Other (2)

http://www.qphotonics.com.

S.-H. Guol, J.-W. Shi, Y.-Y. Chen, J.-H. Wang, W. Lin, T.-J. Yang, and C.-K. Sun, "Flatten and invariant broadband spectra of transverse junction light-emitting diodes under a large range of bias current at 1.06μm wavelengths," in Proceedings of IEEE Conference on Lasers and Electro-Optics Society (LEOS) (IEEE, 2007), pp. 586-587.

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Figures (4)

Fig. 1.
Fig. 1.

Conceptual cross-sectional view and picture of the top-view of demonstrated TJ SLD. The x and y directions labeled in the cross-sectional view are used for far-field measurement. The layout of our epi-layer structure is shown in the inset.

Fig. 2.
Fig. 2.

(a) Measured free-space output optical power under different cw bias currents and different temperatures (6°C, 16°C, and RT). The inset to (a) shows the I–V characteristic curves of the fabricated device. (b) Shows the traces of the spectra under different bias currents and a fixed temperature of 16°C.

Fig. 3.
Fig. 3.

(a) The far-field intensity profiles of TJ LED and SLD under different cw bias currents of 70 and 200 mA, respectively; (b) FWHMs of the measured spectra vs. bias current under cw and pulse mode operation at three different temperatures (6°C, 16°C, and RT).

Fig. 4.
Fig. 4.

(a) Measured free-space output optical power under different pulse bias currents and different temperatures (6°C, 16°C, and RT). (b) Shows the traces of the spectra under different bias currents and a fixed temperature of 16°C.

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