Abstract

One of the major challenges facing the commercialization of extreme ultraviolet (EUV) lithography remains simultaneously achieving resist sensitivity, line-edge roughness, and resolution requirement. Sensitivity is of particular concern owing to its direct impact on source power requirements. Most current EUV exposure tools have been calibrated against a resist standard with the actual calibration of the standard resist dating back to EUV exposures at Sandia National Laboratories in the mid 1990s. Here we report on an independent sensitivity calibration of two baseline resists from the SEMATECH Berkeley MET tool performed at the Advanced Light Source Calibrations and Standards beamline. The results show the baseline resists to be approximately 1.9 times faster than previously thought based on calibration against the long standing resist standard.

© 2008 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. Stulen and D. Sweeney, "Extreme ultraviolet lithography," IEEE J. Quantum Electron. 35, 694-699 (1999).
    [CrossRef]
  2. H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).
  3. T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).
  4. P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
    [CrossRef]
  5. R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
    [CrossRef]
  6. E. M. Gullikson, S. Mrowka, and B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source," Proc. SPIEVol. 4343, 363-373 (2001).
    [CrossRef]
  7. PROLITH lithography modeling software is available from KLA-Tencor Corporation, 160 Rio Robles, San Jose, California 95134.
  8. S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
    [CrossRef]
  9. C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
    [CrossRef]
  10. M. Krumrey and E. Tegeler, "Self-calibration of semiconductor photodiodes in the soft x-ray region," Rev. Sci. Instrum. 63, 797 (1992).
    [CrossRef]
  11. F. Scholze, H. Rabus, and G. Ulm, "Measurement of the mean electron-hole pair creation energy in crystalline silicon for photons in the 50-1500 eV spectral region," Appl. Phys. Lett. 69, 2974 (1996).
    [CrossRef]

2008

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

2007

C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
[CrossRef]

2003

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

2001

E. M. Gullikson, S. Mrowka, and B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source," Proc. SPIEVol. 4343, 363-373 (2001).
[CrossRef]

1999

R. Stulen and D. Sweeney, "Extreme ultraviolet lithography," IEEE J. Quantum Electron. 35, 694-699 (1999).
[CrossRef]

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

1996

F. Scholze, H. Rabus, and G. Ulm, "Measurement of the mean electron-hole pair creation energy in crystalline silicon for photons in the 50-1500 eV spectral region," Appl. Phys. Lett. 69, 2974 (1996).
[CrossRef]

1992

M. Krumrey and E. Tegeler, "Self-calibration of semiconductor photodiodes in the soft x-ray region," Rev. Sci. Instrum. 63, 797 (1992).
[CrossRef]

Anderson, C.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
[CrossRef]

Banine, V.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Brainard, R.

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Brown, K.

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Chambers, J.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Chiu, J.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Cobb, J.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Connolly, S.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Cummings, K.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Dean, K.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Delano, T.

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Denham, P.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
[CrossRef]

Goethals, M.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Goldberg, K.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Gullikson, E. M.

E. M. Gullikson, S. Mrowka, and B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source," Proc. SPIEVol. 4343, 363-373 (2001).
[CrossRef]

Gunn, S.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Hada, K.

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

Hansen, S.

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Harned, N.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Henderson, C.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Hoef, B.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Huh, S.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Hultermans, B.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Jones, G.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Kaufmann, B.

E. M. Gullikson, S. Mrowka, and B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source," Proc. SPIEVol. 4343, 363-373 (2001).
[CrossRef]

Kemp, D.

C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
[CrossRef]

Kohama, Y.

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

Krumrey, M.

M. Krumrey and E. Tegeler, "Self-calibration of semiconductor photodiodes in the soft x-ray region," Rev. Sci. Instrum. 63, 797 (1992).
[CrossRef]

Kürz, P.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

La Fontaine, B.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Lok, S.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Lowisch, M.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Ma, A.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Mackevich, J.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

McDonald, K.

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Meijer, H.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Meiling, H.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Mickan, U.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Miura, T.

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

Morita, K.

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

Mrowka, S.

E. M. Gullikson, S. Mrowka, and B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source," Proc. SPIEVol. 4343, 363-373 (2001).
[CrossRef]

Murakami, K.

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

Naulleau, P.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
[CrossRef]

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Niakoula, D.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

O'Connell, D.

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Ohkubo, Y.

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

Okoroanyanwu, U.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Park, J.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Rabus, H.

F. Scholze, H. Rabus, and G. Ulm, "Measurement of the mean electron-hole pair creation energy in crystalline silicon for photons in the 50-1500 eV spectral region," Appl. Phys. Lett. 69, 2974 (1996).
[CrossRef]

Rao, V.

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Rekawa, S.

C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
[CrossRef]

Robertson, S.

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Ronse, K.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Ryan, J.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Scholze, F.

F. Scholze, H. Rabus, and G. Ulm, "Measurement of the mean electron-hole pair creation energy in crystalline silicon for photons in the 50-1500 eV spectral region," Appl. Phys. Lett. 69, 2974 (1996).
[CrossRef]

Stulen, R.

R. Stulen and D. Sweeney, "Extreme ultraviolet lithography," IEEE J. Quantum Electron. 35, 694-699 (1999).
[CrossRef]

Suzuki, K.

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

Sweeney, D.

R. Stulen and D. Sweeney, "Extreme ultraviolet lithography," IEEE J. Quantum Electron. 35, 694-699 (1999).
[CrossRef]

Tegeler, E.

M. Krumrey and E. Tegeler, "Self-calibration of semiconductor photodiodes in the soft x-ray region," Rev. Sci. Instrum. 63, 797 (1992).
[CrossRef]

Tittnich, M.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Ulm, G.

F. Scholze, H. Rabus, and G. Ulm, "Measurement of the mean electron-hole pair creation energy in crystalline silicon for photons in the 50-1500 eV spectral region," Appl. Phys. Lett. 69, 2974 (1996).
[CrossRef]

Wallow, T.

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

Zimmerman, J.

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

Appl. Phys. Lett.

F. Scholze, H. Rabus, and G. Ulm, "Measurement of the mean electron-hole pair creation energy in crystalline silicon for photons in the 50-1500 eV spectral region," Appl. Phys. Lett. 69, 2974 (1996).
[CrossRef]

IEEE J. Quantum Electron.

R. Stulen and D. Sweeney, "Extreme ultraviolet lithography," IEEE J. Quantum Electron. 35, 694-699 (1999).
[CrossRef]

J. Vac. Sci. & Technol. B

C. Anderson, P. Naulleau, P. Denham, D. Kemp, and S. Rekawa, "Dual-domain scanning illuminator for the SEMATECH Berkeley microfield exposure tool," J. Vac. Sci. & Technol. B 25, 2151-2154 (2007).
[CrossRef]

J. Vac. Sci. Tech. B

R. Brainard, C. Henderson, J. Cobb, V. Rao, J. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," J. Vac. Sci. Tech. B 17, 3384-3389 (1999).
[CrossRef]

Proc. SPIE

E. M. Gullikson, S. Mrowka, and B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source," Proc. SPIEVol. 4343, 363-373 (2001).
[CrossRef]

H. Meiling, V. Banine, K. Cummings, M. Goethals, N. Harned, B. Hultermans, P. Kürz, S. Lok, M. Lowisch, H. Meijer, U. Mickan, K. Ronse, J. Ryan, M. Tittnich, and J. Zimmerman, "Field performance of the EUV alpha demo tools," Proc. SPIE 6921, to be published (2008).

T. Miura, K. Murakami, K. Suzuki, Y. Kohama, K. Morita, K. Hada, and Y. Ohkubo, "Nikon EUVL-development progress update," Proc. SPIE 6921, to be published (2008).

P. Naulleau, C. Anderson, J. Chiu, K. Dean, P. Denham, K. Goldberg, B. Hoef, S. Huh, G. Jones, B. La Fontaine, A. Ma, D. Niakoula,J. Park, and T. Wallow, " Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool," Proc. SPIE 6921, to be published (2008).
[CrossRef]

S. Robertson, P. Naulleau, K. Goldberg, D. O'Connell, K. McDonald, S. Hansen, T. Delano, K. Brown, and R. Brainard, "Calibration of EUV-2D photoresist simulation parameters for accurate predictive modeling," Proc. SPIE 5037, 900-905 (2003).
[CrossRef]

Rev. Sci. Instrum.

M. Krumrey and E. Tegeler, "Self-calibration of semiconductor photodiodes in the soft x-ray region," Rev. Sci. Instrum. 63, 797 (1992).
[CrossRef]

Other

PROLITH lithography modeling software is available from KLA-Tencor Corporation, 160 Rio Robles, San Jose, California 95134.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1.
Fig. 1.

Resist modeling results for printed feature size (CD) as a function of dose for both an idealized 10× system and the SEMATECH Berkeley MET. The assumed illumination was 0.4 σ Gaussian and 0.35–0.55 annular for the 10× and MET tools, respectively.

Fig. 2.
Fig. 2.

Self calibration data for the IRD AXUV-100 diode used in the results presented here. The ratio of the photo-current as a function of photon energy at two different incidence angles is used to determine the thickness of the diode front surface oxide.

Fig. 3.
Fig. 3.

Direct comparison of self and cross calibration methods. The diode responsivity at 13.5 nm is 0.255 A/W.

Fig. 4.
Fig. 4.

Resist modeling results for the Esize/E0 ratio in Rohm and Hass EUV-2D resist.

Tables (3)

Tables Icon

Table 1. Absolute dose to clear measurement results in MET baseline resists.

Tables Icon

Table 2. Absolute dose to clear measurement results in MET baseline resists.

Tables Icon

Table 3. Comparison of dose to size measurements for MET baseline resists for old versus new calibration.

Metrics