Abstract

We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 µm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of ~500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.

© 2008 Optical Society of America

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  1. E. A. Avrutin, J. H. Marsh, and E. L. Portnoi, “Monolitic and multi-Gigahertz mode locked semiconductor lasers: Constructions, experiments, models and applications,” IEE Proc.-Optoelectron.  147, No 4 (2000).
  2. G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
    [Crossref]
  3. K. A. Williams, M. J. Thompson, and I. H. White, “Long-wavelength monolitic mode-locked diode lasers,” New J. Phys. 6, 179 (2004).
    [Crossref]
  4. K. Sato, “Optical pulse generation using Fabry-Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9, 5 (2003).
  5. D. Kunimatsu, S. Arahira, Y. Kato, and Y. Ogawa, “Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers,” IEEE Photon. Technol. Lett. 11, 1363–1365 (1999).
    [Crossref]
  6. K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
    [Crossref]
  7. F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).
  8. J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
    [Crossref]
  9. C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
    [Crossref]
  10. M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).
  11. B. W. Hakki and T. Paoli, “Gain spectra in GaAs double heterostructure injection lasers,” J. Appl. Phys. 46, 1299–1305 (1975).
    [Crossref]
  12. Y. Barbarin, E. A. J. M. Bente, G. Servanton, L. Mussard, Y. S. Oei, R. Nötzel, and M. K. Smit, “Gain measurements of Fabry-Perot InP/InGaAsP lasers using an ultrahigh-resolution spectrometer,” Appl. Opt. 45, 35, 9007–9012 (2006).
    [Crossref] [PubMed]
  13. G. P. Agrawal and N. K Dutta, Long wavelength semiconductor lasers, (Van Nostrand Reinhold Co. Inc. New York1994).
  14. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, (Wiley, New York, 1995). Chap. 5.
  15. G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum. Electron. 25, 2297–2306 (1989).
    [Crossref]
  16. C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259–264 (1982).
    [Crossref]
  17. U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
    [Crossref]
  18. G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4
  19. D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
    [Crossref]

2007 (1)

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

2006 (3)

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Y. Barbarin, E. A. J. M. Bente, G. Servanton, L. Mussard, Y. S. Oei, R. Nötzel, and M. K. Smit, “Gain measurements of Fabry-Perot InP/InGaAsP lasers using an ultrahigh-resolution spectrometer,” Appl. Opt. 45, 35, 9007–9012 (2006).
[Crossref] [PubMed]

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
[Crossref]

2005 (1)

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

2004 (2)

K. A. Williams, M. J. Thompson, and I. H. White, “Long-wavelength monolitic mode-locked diode lasers,” New J. Phys. 6, 179 (2004).
[Crossref]

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

2003 (2)

K. Sato, “Optical pulse generation using Fabry-Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9, 5 (2003).

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

2000 (1)

E. A. Avrutin, J. H. Marsh, and E. L. Portnoi, “Monolitic and multi-Gigahertz mode locked semiconductor lasers: Constructions, experiments, models and applications,” IEE Proc.-Optoelectron.  147, No 4 (2000).

1999 (1)

D. Kunimatsu, S. Arahira, Y. Kato, and Y. Ogawa, “Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers,” IEEE Photon. Technol. Lett. 11, 1363–1365 (1999).
[Crossref]

1992 (1)

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

1989 (1)

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum. Electron. 25, 2297–2306 (1989).
[Crossref]

1982 (1)

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259–264 (1982).
[Crossref]

1975 (1)

B. W. Hakki and T. Paoli, “Gain spectra in GaAs double heterostructure injection lasers,” J. Appl. Phys. 46, 1299–1305 (1975).
[Crossref]

Accard, A.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Agarwal, D.

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

Agrawal, G. P.

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum. Electron. 25, 2297–2306 (1989).
[Crossref]

G. P. Agrawal and N. K Dutta, Long wavelength semiconductor lasers, (Van Nostrand Reinhold Co. Inc. New York1994).

Alouini, M.

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

Angelo, C.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Arahira, S.

D. Kunimatsu, S. Arahira, Y. Kato, and Y. Ogawa, “Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers,” IEEE Photon. Technol. Lett. 11, 1363–1365 (1999).
[Crossref]

Aubin, G.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Avrutin, E. A.

E. A. Avrutin, J. H. Marsh, and E. L. Portnoi, “Monolitic and multi-Gigahertz mode locked semiconductor lasers: Constructions, experiments, models and applications,” IEE Proc.-Optoelectron.  147, No 4 (2000).

Baili, G.

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

Bandelow, U.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
[Crossref]

Barbarin, Y.

Bente, E. A. J. M.

Bhatnagar, A.

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

Birkedal, D.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Bowers, J. E.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

Brenot, R.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Bretenaker, F.

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

Chazelas, J.

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

Christiansen, L.J.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Coldren, L. A.

L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, (Wiley, New York, 1995). Chap. 5.

Corzine, S. W.

L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, (Wiley, New York, 1995). Chap. 5.

Dagens, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Debaes, C.

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

Derickson, D. J.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

Derouin, E.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

Dolfi, D.

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

Drisse, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

Duan, G.-H.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Dutta, N. K

G. P. Agrawal and N. K Dutta, Long wavelength semiconductor lasers, (Van Nostrand Reinhold Co. Inc. New York1994).

Gallion, P.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Gosset, C.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Hakki, B. W.

B. W. Hakki and T. Paoli, “Gain spectra in GaAs double heterostructure injection lasers,” J. Appl. Phys. 46, 1299–1305 (1975).
[Crossref]

Hanberg, J.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Helkey, R. J.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

Helman, N. C.

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

Henry, C. H.

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259–264 (1982).
[Crossref]

Hüttl, B.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
[Crossref]

Hvam, J. M.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Kaiser, R.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
[Crossref]

Karin, J. R.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

Kato, Y.

D. Kunimatsu, S. Arahira, Y. Kato, and Y. Ogawa, “Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers,” IEEE Photon. Technol. Lett. 11, 1363–1365 (1999).
[Crossref]

Keeler, G. A.

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

Kovsh, A. R.

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Krestnikov, I. L.

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Kunimatsu, D.

D. Kunimatsu, S. Arahira, Y. Kato, and Y. Ogawa, “Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers,” IEEE Photon. Technol. Lett. 11, 1363–1365 (1999).
[Crossref]

Landreau, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Larsson, D.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Le Gouezigou, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

Legouezigou, O.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Lelarge, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Livshits, D. A.

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Make, D.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

Mar, A.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

Marsh, J. H.

E. A. Avrutin, J. H. Marsh, and E. L. Portnoi, “Monolitic and multi-Gigahertz mode locked semiconductor lasers: Constructions, experiments, models and applications,” IEE Proc.-Optoelectron.  147, No 4 (2000).

Martinez, A.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Merghem, K.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Merlet, T.

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

Mikhrin, S. S.

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Miller, D. A. B

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

Moreau, G.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Mrk, J.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Mussard, L.

Nelson, B. E.

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

Nötzel, R.

Oei, Y. S.

Ogawa, Y.

D. Kunimatsu, S. Arahira, Y. Kato, and Y. Ogawa, “Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers,” IEEE Photon. Technol. Lett. 11, 1363–1365 (1999).
[Crossref]

Olsson, N. A.

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum. Electron. 25, 2297–2306 (1989).
[Crossref]

Oxenlwe, L. K.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Paoli, T.

B. W. Hakki and T. Paoli, “Gain spectra in GaAs double heterostructure injection lasers,” J. Appl. Phys. 46, 1299–1305 (1975).
[Crossref]

Patriarche, G.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Penty, R. V.

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Poingt, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Pommereau, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Portnoi, E. L.

E. A. Avrutin, J. H. Marsh, and E. L. Portnoi, “Monolitic and multi-Gigahertz mode locked semiconductor lasers: Constructions, experiments, models and applications,” IEE Proc.-Optoelectron.  147, No 4 (2000).

Provost, J.-G.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

Radziunas, M.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
[Crossref]

Rae, A. R.

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Ramdane, A.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

Renaudier, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Rousseau, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

Sagnes, I.

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

Sato, K.

K. Sato, “Optical pulse generation using Fabry-Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9, 5 (2003).

Servanton, G.

Smit, M. K.

Thompson, M. G.

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Thompson, M. J.

K. A. Williams, M. J. Thompson, and I. H. White, “Long-wavelength monolitic mode-locked diode lasers,” New J. Phys. 6, 179 (2004).
[Crossref]

Van Dijk, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

Vladimirov, A.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
[Crossref]

Wasserbauer, J. G.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

White, I. H.

K. A. Williams, M. J. Thompson, and I. H. White, “Long-wavelength monolitic mode-locked diode lasers,” New J. Phys. 6, 179 (2004).
[Crossref]

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

Williams, K. A.

K. A. Williams, M. J. Thompson, and I. H. White, “Long-wavelength monolitic mode-locked diode lasers,” New J. Phys. 6, 179 (2004).
[Crossref]

Yvind, K.

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

Appl. Opt. (1)

Appl. Phys. Lett. (1)

C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88, 241105 (2006).
[Crossref]

IEE Electron. Lett. (1)

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G.-H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm,” IEE Electron. Lett. 41, 1007 (2005).
[Crossref]

IEEE J. Quantum Electron. (3)

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259–264 (1982).
[Crossref]

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short Pulse Generation using Multisegment Mode- Locked Semiconductor Lasers,” IEEE J. Quantum Electron. 28, 2186–2202 (1992).
[Crossref]

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Quantum Electron. 9, 477–485 (2003).
[Crossref]

IEEE J. Quantum. Electron. (1)

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum. Electron. 25, 2297–2306 (1989).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

K. Sato, “Optical pulse generation using Fabry-Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9, 5 (2003).

IEEE J. Sel. Top. Quantum. Electron. (1)

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 µm,” IEEE J. Sel. Top. Quantum. Electron. 13, 11 (2007).

IEEE Photon. Technol. Lett. (2)

D. Kunimatsu, S. Arahira, Y. Kato, and Y. Ogawa, “Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers,” IEEE Photon. Technol. Lett. 11, 1363–1365 (1999).
[Crossref]

K. Yvind, D. Larsson, L.J. Christiansen, C. Angelo, L. K. Oxenlwe, J. Mrk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40-GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16, 975–977 (2004).
[Crossref]

J. Appl. Phys. (1)

B. W. Hakki and T. Paoli, “Gain spectra in GaAs double heterostructure injection lasers,” J. Appl. Phys. 46, 1299–1305 (1975).
[Crossref]

New J. Phys. (1)

K. A. Williams, M. J. Thompson, and I. H. White, “Long-wavelength monolitic mode-locked diode lasers,” New J. Phys. 6, 179 (2004).
[Crossref]

Opt. Quantum Electron. (1)

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38, 495–512 (2006).
[Crossref]

Other (5)

G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, T. Merlet, and J. Chazelas, “Novel architectures of very low RIN semiconductor lasers in extended cavities for high performance microwave links” International Topical Meeting on Microwave Photonics, 2006 Page(s): 1–4

G. P. Agrawal and N. K Dutta, Long wavelength semiconductor lasers, (Van Nostrand Reinhold Co. Inc. New York1994).

L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, (Wiley, New York, 1995). Chap. 5.

E. A. Avrutin, J. H. Marsh, and E. L. Portnoi, “Monolitic and multi-Gigahertz mode locked semiconductor lasers: Constructions, experiments, models and applications,” IEE Proc.-Optoelectron.  147, No 4 (2000).

M. G. Thompson, A. R. Rae, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Absorber Length Optimisation for Sub-Picosecond Pulse Generation and Ultra-Low Jitter performance in Passively Mode-Locked 1.3µm Quantum-Dot Laser Diodes,” Anaheim, USA, OFC OThG3 (IEEE, Anaheim, 2006).

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Figures (10)

Fig. 1.
Fig. 1.

Simulated beam profile of the ridge single mode waveguide, a Γ of ~1 % is deduced

Fig. 2.
Fig. 2.

Net gain versus current

Fig. 3.
Fig. 3.

LEF as a function of current estimated by Hakki-Paoli Method below threshold and FM/AM Method above threshold current

Fig. 4.
Fig. 4.

(a). L-I curves for various bias applied on saturable absorber section at room temperature. (b) zoom of the threshold region.

Fig. 5.
Fig. 5.

Autocorrelation trace of an isolated pulse fitting by lorentzian and gaussian shapes

Fig. 6.
Fig. 6.

Pulsewidth versus both reverse bias VSA and current

Fig. 7.
Fig. 7.

(a). Autocorrelation trace of an isolated pulse for I=74 mA and V=-3.8 V. (b) the corresponding optical spectrum.

Fig. 8.
Fig. 8.

Time-bandwith product versus LEF (a) and reverse bias VSA (b) respectively

Fig. 9.
Fig. 9.

RIN measurements

Fig. 10.
Fig. 10.

RF spectrum for passive mode locked laser

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

g = dg dN ( N N 0 )
N τ + B N 2 + C N 3 = I q S L [ 12 ]
α H = 4 π λ dn dN dg dN
E sat = hv A dg dN [ 15 ]

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