Abstract

We demonstrated passive mode-locking of a Nd:YAG ceramic laser by optical interference modulation in a GaAs wafer. The combined effect of Kerr nonlinearity and optical interference in GaAs acted as an artificial saturable absorber and resulted in mode-locking. Maximum average output power of the mode-locked laser was as high as 2.84W, with a slope efficiency of 48%. The mode-locked pulse duration was as short as 4.1 ps. To our knowledge, this is the shortest pulse obtained from all Nd:YAG lasers without dispersion compensation.

© 2007 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
    [CrossRef]
  2. U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
    [CrossRef]
  3. S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
    [CrossRef]
  4. Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
    [CrossRef]
  5. D. Y. Shen, D. Y. Tang, and K. Ueda, "Continuous wave and Q-Switched mode-locking of a Nd : YVO4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002).
    [CrossRef]
  6. J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
    [CrossRef]
  7. J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
    [CrossRef]
  8. B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978).
    [CrossRef]
  9. T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
    [CrossRef]
  10. M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
    [CrossRef]
  11. M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003).
    [CrossRef]
  12. I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
    [CrossRef]
  13. Y. F. Qi, X. L. Zhu, Q. H. Lou, J. H. Ji, J. X. Dong, and Y. R. Wei, "Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications," Opt. Express 13, 8725-8729 (2005).
    [CrossRef] [PubMed]
  14. Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
    [CrossRef]
  15. L. Guo, W. Hou, H. B. Zhang, Z. P. Sun, D. F. Cui, Z. Y. Xu, Y. G. Wang, and X. Y. Ma, "Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror," Opt. Express 13, 4085-4089 (2005).
    [CrossRef] [PubMed]
  16. J. L. Oudar, "Ultrafast semiconductor all-optical processing devices for telecommunications applications," in Ultra-fast Photonics, A. Miller, D. T. Reid, and D. M. Finlayson, eds. (Academic, 2004), pp. 225-264.
  17. M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).
    [CrossRef]

2006

J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
[CrossRef]

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

2005

2004

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
[CrossRef]

2003

M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003).
[CrossRef]

2002

M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
[CrossRef]

D. Y. Shen, D. Y. Tang, and K. Ueda, "Continuous wave and Q-Switched mode-locking of a Nd : YVO4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002).
[CrossRef]

2000

L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
[CrossRef]

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

1996

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

1992

Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
[CrossRef]

1991

M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).
[CrossRef]

1985

T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
[CrossRef]

1978

B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978).
[CrossRef]

Bessey, J. S.

B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978).
[CrossRef]

Boggess, T. F.

T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
[CrossRef]

Bosacchi, B.

B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978).
[CrossRef]

Boyd, I. W.

T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
[CrossRef]

Braun, B.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Cui, D. F.

Daweritz, L.

M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
[CrossRef]

Deng, X. M.

Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
[CrossRef]

derAu, J. A.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Dong, J. X.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Y. F. Qi, X. L. Zhu, Q. H. Lou, J. H. Ji, J. X. Dong, and Y. R. Wei, "Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications," Opt. Express 13, 8725-8729 (2005).
[CrossRef] [PubMed]

Fan, D. Y.

Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
[CrossRef]

Fluck, R.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Giehler, M.

M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003).
[CrossRef]

M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
[CrossRef]

Guo, L.

Hagan, D. J.

M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).
[CrossRef]

He, J. L.

J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
[CrossRef]

Herfort, J.

M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003).
[CrossRef]

M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
[CrossRef]

Honninger, C.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Hou, W.

Hutchings, D. C.

M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).
[CrossRef]

Ikesue, A.

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

Jain, F. C.

B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978).
[CrossRef]

Ji, J. H.

Jung, I. D.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Kartner, F. X.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Keller, U.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
[CrossRef]

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Kong, J.

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

Kopf, D.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Krainer, L.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
[CrossRef]

Kurimura, S.

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

Liu, J.

J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
[CrossRef]

Liu, Y. P.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Lou, Q. H.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Y. F. Qi, X. L. Zhu, Q. H. Lou, J. H. Ji, J. X. Dong, and Y. R. Wei, "Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications," Opt. Express 13, 8725-8729 (2005).
[CrossRef] [PubMed]

Lu, J.

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

Ma, H. X.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Ma, X. Y.

J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
[CrossRef]

L. Guo, W. Hou, H. B. Zhang, Z. P. Sun, D. F. Cui, Z. Y. Xu, Y. G. Wang, and X. Y. Ma, "Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror," Opt. Express 13, 4085-4089 (2005).
[CrossRef] [PubMed]

Matuschek, N.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Moser, M.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
[CrossRef]

Moss, S. C.

T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
[CrossRef]

Pan, H. F.

S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
[CrossRef]

Paschotta, R.

L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
[CrossRef]

Ploog, K. H.

M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003).
[CrossRef]

M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
[CrossRef]

Qi, Y. F.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Y. F. Qi, X. L. Zhu, Q. H. Lou, J. H. Ji, J. X. Dong, and Y. R. Wei, "Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications," Opt. Express 13, 8725-8729 (2005).
[CrossRef] [PubMed]

Qian, L. J.

Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
[CrossRef]

Sato, Y.

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

Sheikbahae, M.

M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).
[CrossRef]

Shen, D. Y.

D. Y. Shen, D. Y. Tang, and K. Ueda, "Continuous wave and Q-Switched mode-locking of a Nd : YVO4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002).
[CrossRef]

Shoji, I.

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

Smirl, A. L.

T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
[CrossRef]

Sun, Z. P.

Taira, T.

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

Tang, D. Y.

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

D. Y. Shen, D. Y. Tang, and K. Ueda, "Continuous wave and Q-Switched mode-locking of a Nd : YVO4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002).
[CrossRef]

Ueda, K.

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

D. Y. Shen, D. Y. Tang, and K. Ueda, "Continuous wave and Q-Switched mode-locking of a Nd : YVO4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002).
[CrossRef]

Ulrici, W.

M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
[CrossRef]

Van Stryland, E. W.

M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).
[CrossRef]

Vanstryland, E. W.

T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
[CrossRef]

Wang, Y. G.

J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
[CrossRef]

L. Guo, W. Hou, H. B. Zhang, Z. P. Sun, D. F. Cui, Z. Y. Xu, Y. G. Wang, and X. Y. Ma, "Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror," Opt. Express 13, 4085-4089 (2005).
[CrossRef] [PubMed]

Wei, Y. R.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Y. F. Qi, X. L. Zhu, Q. H. Lou, J. H. Ji, J. X. Dong, and Y. R. Wei, "Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications," Opt. Express 13, 8725-8729 (2005).
[CrossRef] [PubMed]

Weingarten, K. J.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

Wu, E.

S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
[CrossRef]

Xu, Z. Y.

Yagi, H.

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

Yanagitani, T.

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

Yang, J. M.

J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
[CrossRef]

Yoshida, K.

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

Zeng, H. P.

S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
[CrossRef]

Zhang, H. B.

Zhang, S.

S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
[CrossRef]

Zhang, Y. H.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Zhang, Z. H.

Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
[CrossRef]

Zhu, X. L.

Appl. Phys. Lett.

Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
[CrossRef]

L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
[CrossRef]

I. Shoji, S. Kurimura, Y. Sato, T. Taira, A. Ikesue, and K. Yoshida, "Optical properties and laser characteristics of highly Nd3+-doped Y3Al5O12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
[CrossRef]

IEEE J. Quantum Electron.

T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
[CrossRef]

M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).
[CrossRef]

S. Zhang, E. Wu, H. F. Pan, and H. P. Zeng, "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
[CrossRef]

J. Appl Phys.

M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
[CrossRef]

J. Appl. Phys.

B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978).
[CrossRef]

J. Opt. A- Pure Appl. Opt.

Y. F. Qi, Q. H. Lou, Y. P. Liu, Y. H. Zhang, H. X. Ma, J. X. Dong, and Y. R. Wei, "Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
[CrossRef]

Jpn. J. Appl. Phys.

D. Y. Shen, D. Y. Tang, and K. Ueda, "Continuous wave and Q-Switched mode-locking of a Nd : YVO4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002).
[CrossRef]

Mater. Sci. Semicond. Process

M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003).
[CrossRef]

Opt. Commun.

J. Kong, D. Y. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, "Passively mode-locked Yb:Y2O3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
[CrossRef]

J. Liu, Y. G. Wang, J. M. Yang, J. L. He, and X. Y. Ma, "Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
[CrossRef]

Opt. Express

Other

J. L. Oudar, "Ultrafast semiconductor all-optical processing devices for telecommunications applications," in Ultra-fast Photonics, A. Miller, D. T. Reid, and D. M. Finlayson, eds. (Academic, 2004), pp. 225-264.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1.
Fig. 1.

Experimental setup of the mode-locked Nd:YAG ceramic laser.

Fig. 2.
Fig. 2.

Reflectivity of the GaAs wafer as a function of the laser intensity under different back surface reflectivity. The front surface reflectivity R1 was set to be 90%. The other parameters were set as: n 0 =3.48; n 2 = –3.25×10-13 cm 2/W ; α 0 = 2.5cm -1 ; β = 15cm/GW ; L = 449.965μm ; λ = 1064.5nm.

Fig. 3.
Fig. 3.

Output power versus absorbed pump power under CW and ML operations.

Fig. 4.
Fig. 4.

Oscilloscope traces of the mode-locked pulse trains. (a) under nanosecond scale; (b) under millisecond scale.

Fig. 5.
Fig. 5.

Measured autocorrelation trace of the mode-locked pulses. Assuming a Sech2 pulse shape, the pulse duration is about 4.1 ps. Inset: spectrum of the mode-locked pulses.

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

R = ( R 1 e α L R 2 ) 2 + 4 R 1 R 2 e α L Sin 2 ( Φ / 2 ) ( 1 R 1 R 2 e α L ) 2 + 4 R 1 R 2 e α L Sin 2 ( Φ / 2 )
α = α 0 + β I
Φ = 4 π λ ( n 0 + n 2 I ) L

Metrics