Abstract

The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called “critical electric field” related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the surface field exceeds the critical field, the amplitude is independent of the surface field but proportional to the product of the critical field and the number of the photo-excited carriers.

© 2007 Optical Society of America

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  1. P. Gu, M. Tani. S. Kono, and K. Sakai, "Study of terahertz radiation from InAs and InSb," J. Appl. Phys. 91, 5533-5537 (2002).
    [CrossRef]
  2. S. Winnerl, S. Sinning, T. Dekorsy, and M. Helm, "Increased terahertz emission from thermally treated GaSb," Appl. Phys. Lett. 85, 3092-3094 (2004).
    [CrossRef]
  3. L. Xu, X. C. Zhang, and D. H. Auston, "Terahertz radiation from large aperture Si p-i-n diodes," Appl. Phys. Lett. 59, 3357-3359 (1991).
    [CrossRef]
  4. H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
    [CrossRef]
  5. H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
    [CrossRef]
  6. X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
    [CrossRef]
  7. J. S. Hwang, W. C. Hwang, Z. P. Yang, and G. S. Chang, "Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure," Appl. Phys. Lett. 75, 2467-2469 (1999).
    [CrossRef]
  8. J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
    [CrossRef]
  9. J. N. Heyman, N. Coates, and A. Reinhardt, "Diffusion and drift in terahertz emission at GaAs surfaces," Appl. Phys. Lett. 83, 5476-5478 (2003).
    [CrossRef]
  10. X. C. Zhang, and D. H. Auston, "Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics," J. Appl. Phys. 71, 326-338 (1992).
    [CrossRef]
  11. Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
    [CrossRef]
  12. J. R. Hook and H. E. Hall, Solid State Physics (John Wiley & Sons, 1991), Chap. 5.
  13. A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
    [CrossRef]
  14. A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
    [CrossRef]
  15. A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
    [CrossRef]

2005 (1)

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

2004 (1)

S. Winnerl, S. Sinning, T. Dekorsy, and M. Helm, "Increased terahertz emission from thermally treated GaSb," Appl. Phys. Lett. 85, 3092-3094 (2004).
[CrossRef]

2003 (1)

J. N. Heyman, N. Coates, and A. Reinhardt, "Diffusion and drift in terahertz emission at GaAs surfaces," Appl. Phys. Lett. 83, 5476-5478 (2003).
[CrossRef]

2002 (1)

P. Gu, M. Tani. S. Kono, and K. Sakai, "Study of terahertz radiation from InAs and InSb," J. Appl. Phys. 91, 5533-5537 (2002).
[CrossRef]

1999 (4)

J. S. Hwang, W. C. Hwang, Z. P. Yang, and G. S. Chang, "Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure," Appl. Phys. Lett. 75, 2467-2469 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
[CrossRef]

1998 (1)

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

1992 (1)

X. C. Zhang, and D. H. Auston, "Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics," J. Appl. Phys. 71, 326-338 (1992).
[CrossRef]

1991 (3)

L. Xu, X. C. Zhang, and D. H. Auston, "Terahertz radiation from large aperture Si p-i-n diodes," Appl. Phys. Lett. 59, 3357-3359 (1991).
[CrossRef]

H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
[CrossRef]

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

1990 (1)

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Auston, D. H.

X. C. Zhang, and D. H. Auston, "Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics," J. Appl. Phys. 71, 326-338 (1992).
[CrossRef]

L. Xu, X. C. Zhang, and D. H. Auston, "Terahertz radiation from large aperture Si p-i-n diodes," Appl. Phys. Lett. 59, 3357-3359 (1991).
[CrossRef]

Brener, I.

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

Buchwald, W.

H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
[CrossRef]

Cai, Y.

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

Chang, G. S.

J. S. Hwang, W. C. Hwang, Z. P. Yang, and G. S. Chang, "Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure," Appl. Phys. Lett. 75, 2467-2469 (1999).
[CrossRef]

Chang, W. H.

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Chen, H. M.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Chen, K. C.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

Chen, Y.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Coates, N.

J. N. Heyman, N. Coates, and A. Reinhardt, "Diffusion and drift in terahertz emission at GaAs surfaces," Appl. Phys. Lett. 83, 5476-5478 (2003).
[CrossRef]

Dekorsy, T.

S. Winnerl, S. Sinning, T. Dekorsy, and M. Helm, "Increased terahertz emission from thermally treated GaSb," Appl. Phys. Lett. 85, 3092-3094 (2004).
[CrossRef]

Dutta, M.

H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
[CrossRef]

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Fotiadis, L.

H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
[CrossRef]

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Gu, P.

P. Gu, M. Tani. S. Kono, and K. Sakai, "Study of terahertz radiation from InAs and InSb," J. Appl. Phys. 91, 5533-5537 (2002).
[CrossRef]

Helm, M.

S. Winnerl, S. Sinning, T. Dekorsy, and M. Helm, "Increased terahertz emission from thermally treated GaSb," Appl. Phys. Lett. 85, 3092-3094 (2004).
[CrossRef]

Heyman, J. N.

J. N. Heyman, N. Coates, and A. Reinhardt, "Diffusion and drift in terahertz emission at GaAs surfaces," Appl. Phys. Lett. 83, 5476-5478 (2003).
[CrossRef]

Hong, Y. G.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

Hsu, S. H.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

Hunsche, S.

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
[CrossRef]

Hwang, J. S.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

J. S. Hwang, W. C. Hwang, Z. P. Yang, and G. S. Chang, "Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure," Appl. Phys. Lett. 75, 2467-2469 (1999).
[CrossRef]

Hwang, W. C.

J. S. Hwang, W. C. Hwang, Z. P. Yang, and G. S. Chang, "Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure," Appl. Phys. Lett. 75, 2467-2469 (1999).
[CrossRef]

Kirchner, P. D.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Knox, W. H.

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
[CrossRef]

Leitenstorfer, A.

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
[CrossRef]

Lin, H. C.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

Lin, K. I.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

Lopata, J.

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

Lu, Y. T.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

Lux, R.

H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
[CrossRef]

Moerkirk, R.

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Montano, P. A.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Newman, P. G.

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Nuss, M. C.

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
[CrossRef]

Pettit, G. D.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Pfeiffer, L.

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

Pollak, F. H.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Reinhardt, A.

J. N. Heyman, N. Coates, and A. Reinhardt, "Diffusion and drift in terahertz emission at GaAs surfaces," Appl. Phys. Lett. 83, 5476-5478 (2003).
[CrossRef]

Sacks, R. N.

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Shah, J.

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
[CrossRef]

Shen, H.

H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
[CrossRef]

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

Sinning, S.

S. Winnerl, S. Sinning, T. Dekorsy, and M. Helm, "Increased terahertz emission from thermally treated GaSb," Appl. Phys. Lett. 85, 3092-3094 (2004).
[CrossRef]

Stark, J. B.

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

Tani, M.

P. Gu, M. Tani. S. Kono, and K. Sakai, "Study of terahertz radiation from InAs and InSb," J. Appl. Phys. 91, 5533-5537 (2002).
[CrossRef]

Tu, C. W.

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

Winnerl, S.

S. Winnerl, S. Sinning, T. Dekorsy, and M. Helm, "Increased terahertz emission from thermally treated GaSb," Appl. Phys. Lett. 85, 3092-3094 (2004).
[CrossRef]

Woodall, J. M.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Wynn, J.

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

Xu, L.

L. Xu, X. C. Zhang, and D. H. Auston, "Terahertz radiation from large aperture Si p-i-n diodes," Appl. Phys. Lett. 59, 3357-3359 (1991).
[CrossRef]

Yang, Z. P.

J. S. Hwang, W. C. Hwang, Z. P. Yang, and G. S. Chang, "Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure," Appl. Phys. Lett. 75, 2467-2469 (1999).
[CrossRef]

Yin, X.

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

Zhang, X. C.

X. C. Zhang, and D. H. Auston, "Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics," J. Appl. Phys. 71, 326-338 (1992).
[CrossRef]

L. Xu, X. C. Zhang, and D. H. Auston, "Terahertz radiation from large aperture Si p-i-n diodes," Appl. Phys. Lett. 59, 3357-3359 (1991).
[CrossRef]

Appl. Phys. Lett. (10)

S. Winnerl, S. Sinning, T. Dekorsy, and M. Helm, "Increased terahertz emission from thermally treated GaSb," Appl. Phys. Lett. 85, 3092-3094 (2004).
[CrossRef]

L. Xu, X. C. Zhang, and D. H. Auston, "Terahertz radiation from large aperture Si p-i-n diodes," Appl. Phys. Lett. 59, 3357-3359 (1991).
[CrossRef]

H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett. 57, 2118-2120 (1990).
[CrossRef]

H. Shen, M. Dutta, R. Lux, W. Buchwald, and L. Fotiadis, "Dynamics of photoreflectance from undoped GaAs," Appl. Phys. Lett. 59, 321-323 (1991).
[CrossRef]

X. Yin, H. M. Chen, F. H. Pollak, Y. Chen, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces," Appl. Phys. Lett. 58, 260-262 (1991).
[CrossRef]

J. S. Hwang, W. C. Hwang, Z. P. Yang, and G. S. Chang, "Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure," Appl. Phys. Lett. 75, 2467-2469 (1999).
[CrossRef]

J. S. Hwang, K. I. Lin, H. C. Lin, S. H. Hsu, K. C. Chen, Y. T. Lu, Y. G. Hong, and C. W. Tu, "Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures," Appl. Phys. Lett. 86, 061103 (2005).
[CrossRef]

J. N. Heyman, N. Coates, and A. Reinhardt, "Diffusion and drift in terahertz emission at GaAs surfaces," Appl. Phys. Lett. 83, 5476-5478 (2003).
[CrossRef]

Y. Cai, I. Brener, J. Lopata, J. Wynn, L. Pfeiffer, and J. B. Stark, "Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection," Appl. Phys. Lett. 73, 444-446 (1998).
[CrossRef]

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory," Appl. Phys. Lett. 74, 1516-1518 (1999).
[CrossRef]

J. Appl. Phys. (2)

P. Gu, M. Tani. S. Kono, and K. Sakai, "Study of terahertz radiation from InAs and InSb," J. Appl. Phys. 91, 5533-5537 (2002).
[CrossRef]

X. C. Zhang, and D. H. Auston, "Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics," J. Appl. Phys. 71, 326-338 (1992).
[CrossRef]

Phys. Rev. B. (1)

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond high-field transport in compound semiconductors," Phys. Rev. B. 61, 16642-16652 (1999).
[CrossRef]

Phys. Rev. Lett. (1)

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, "Femtosecond charge transport in Polar Semiconductors," Phys. Rev. Lett. 82, 5140-5143 (1999).
[CrossRef]

Other (1)

J. R. Hook and H. E. Hall, Solid State Physics (John Wiley & Sons, 1991), Chap. 5.

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Figures (6)

Fig. 1.
Fig. 1.

The PR spectra from all the as-grown samples.

Fig. 2.
Fig. 2.

The FKO extrema En plotted as a function of Fn for the GaAs sample with different undoped layer thickness

Fig. 3.
Fig. 3.

The built-in electric fields of all the samples as a function of intrinsic layer thickness d.

Fig. 4.
Fig. 4.

The amplitude of the THz radiation from the GaAs SIN+ structures with various intrinsic layer thickness. The inset displays several time domain THz spectra of samples with different intrinsic layer thicknesses.

Fig. 5.
Fig. 5.

The THz radiation and the product of nphEloc, plotted in solid squares and open circles, respectively, as a function of the thickness of the intrinsic layer.

Fig. 6.
Fig. 6.

The product of carrier number and effective electric field, nphEeff, and the amplitude of the THz plotted as a function of the intrinsic layer thickness(d).

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

J ( x , t ) t e E loc μ n ph ( x , t ) t
E THz n ph μ E loc
n ph = η ( 1 R ) γћω cos θ n 0 d + s I 0 exp ( αx cos θ n ) αdx

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