Abstract

Si nanocrystals (nc-Si) are addressed in the eutectic Al2O3:SiO2 thin films co-doped with Er3+ and Yb3+ by the laser-induced crystallization (LIC). The thin films are originally synthesized on a silica-on-silicon (SOS) substrate by the microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF sputtering. Raman spectroscopy has revealed that the strong crystallization occurs with the emergence of the nc-Si in the eutectic Al2O3: SiO2 layer during the liquid phase transformation. The dual wavelength energy transfer mechanism at 800nm and 980nm induced by 980nm excitation in nc-Si and Yb sensitized Er doped system has been proposed and demonstrated. A tenfold photoluminescence enhancement has been obtained from this mechanism.

© 2007 Optical Society of America

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References

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  1. F. Iacona, G. Franzò, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys. 87,1295 (2000).
    [Crossref]
  2. K. Watanabe, M. Fujii, and S. Hayashi, “Photoluminescence from B-doped Si nanocrystals,” J. Appl. Phys. 90,4761 (2001).
    [Crossref]
  3. R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
    [Crossref]
  4. M. B. Lee, J. H. Lee, B. G. Frederick, and N. V. Richardson, “Surface structure of ultra-thin A12O3 films on metal substrates,” Surf. Sci. 448,L207 (2000).
    [Crossref]
  5. M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
    [Crossref]
  6. Q. Song, C.-R. Li, J.-Y. Li, and W.-Y. Ding, “Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering,” Opt Mater, 28,1344 (2006).
    [Crossref]
  7. Q. Song, J.-S. Gao, X.-Y Wang, and T.-T. Wang, “Effect of pulse CO2 laser annealing on the crystallization of Er3+ doped Al2O3 thin film to a silica-on-silicon substrate,” Opt Common. 271,137 (2007).
    [Crossref]
  8. O. Ebil, R. Aparicio, S. Heedus, and Birkmire, “Growth and characterization of HWCVD Si Films on Al coated glass,” NCPV and Solar Program Review Meeting. 813 (2003).
  9. Y. Sasaki and K. Ishii, “Molecular dynamics analysis of three-dimensional anionic structures of molten Al2O3-Na2O-SiO2 system,” ISIJ International, 44,43 (2004).
    [Crossref]
  10. W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).
  11. G. Turrell and J. Comet. “Raman microscopy developments and applications,” [M] J. Academic Press, (1996).

2007 (1)

Q. Song, J.-S. Gao, X.-Y Wang, and T.-T. Wang, “Effect of pulse CO2 laser annealing on the crystallization of Er3+ doped Al2O3 thin film to a silica-on-silicon substrate,” Opt Common. 271,137 (2007).
[Crossref]

2006 (1)

Q. Song, C.-R. Li, J.-Y. Li, and W.-Y. Ding, “Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering,” Opt Mater, 28,1344 (2006).
[Crossref]

2004 (2)

Y. Sasaki and K. Ishii, “Molecular dynamics analysis of three-dimensional anionic structures of molten Al2O3-Na2O-SiO2 system,” ISIJ International, 44,43 (2004).
[Crossref]

W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).

2003 (1)

O. Ebil, R. Aparicio, S. Heedus, and Birkmire, “Growth and characterization of HWCVD Si Films on Al coated glass,” NCPV and Solar Program Review Meeting. 813 (2003).

2001 (1)

K. Watanabe, M. Fujii, and S. Hayashi, “Photoluminescence from B-doped Si nanocrystals,” J. Appl. Phys. 90,4761 (2001).
[Crossref]

2000 (3)

M. B. Lee, J. H. Lee, B. G. Frederick, and N. V. Richardson, “Surface structure of ultra-thin A12O3 films on metal substrates,” Surf. Sci. 448,L207 (2000).
[Crossref]

M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
[Crossref]

F. Iacona, G. Franzò, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys. 87,1295 (2000).
[Crossref]

1994 (1)

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Abernathy, C. R

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Afonso, C.N.

M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
[Crossref]

Aparicio, R.

O. Ebil, R. Aparicio, S. Heedus, and Birkmire, “Growth and characterization of HWCVD Si Films on Al coated glass,” NCPV and Solar Program Review Meeting. 813 (2003).

Birkmire,

O. Ebil, R. Aparicio, S. Heedus, and Birkmire, “Growth and characterization of HWCVD Si Films on Al coated glass,” NCPV and Solar Program Review Meeting. 813 (2003).

Chaos, J. A.

M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
[Crossref]

Comet, J.

G. Turrell and J. Comet. “Raman microscopy developments and applications,” [M] J. Academic Press, (1996).

de Castro, M. Jimenez

M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
[Crossref]

Ding, W.-Y.

Q. Song, C.-R. Li, J.-Y. Li, and W.-Y. Ding, “Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering,” Opt Mater, 28,1344 (2006).
[Crossref]

Ebil, O.

O. Ebil, R. Aparicio, S. Heedus, and Birkmire, “Growth and characterization of HWCVD Si Films on Al coated glass,” NCPV and Solar Program Review Meeting. 813 (2003).

F, H.

W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).

Franzò, G.

F. Iacona, G. Franzò, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys. 87,1295 (2000).
[Crossref]

Frederick, B. G.

M. B. Lee, J. H. Lee, B. G. Frederick, and N. V. Richardson, “Surface structure of ultra-thin A12O3 films on metal substrates,” Surf. Sci. 448,L207 (2000).
[Crossref]

Fu, T.

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Fujii, M.

K. Watanabe, M. Fujii, and S. Hayashi, “Photoluminescence from B-doped Si nanocrystals,” J. Appl. Phys. 90,4761 (2001).
[Crossref]

Gao, J.-S.

Q. Song, J.-S. Gao, X.-Y Wang, and T.-T. Wang, “Effect of pulse CO2 laser annealing on the crystallization of Er3+ doped Al2O3 thin film to a silica-on-silicon substrate,” Opt Common. 271,137 (2007).
[Crossref]

Hayashi, S.

K. Watanabe, M. Fujii, and S. Hayashi, “Photoluminescence from B-doped Si nanocrystals,” J. Appl. Phys. 90,4761 (2001).
[Crossref]

He, J.

W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).

Heedus, S.

O. Ebil, R. Aparicio, S. Heedus, and Birkmire, “Growth and characterization of HWCVD Si Films on Al coated glass,” NCPV and Solar Program Review Meeting. 813 (2003).

Hodgson, E.R.

M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
[Crossref]

Iacona, F.

F. Iacona, G. Franzò, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys. 87,1295 (2000).
[Crossref]

Ishii, K.

Y. Sasaki and K. Ishii, “Molecular dynamics analysis of three-dimensional anionic structures of molten Al2O3-Na2O-SiO2 system,” ISIJ International, 44,43 (2004).
[Crossref]

Lee, J. H.

M. B. Lee, J. H. Lee, B. G. Frederick, and N. V. Richardson, “Surface structure of ultra-thin A12O3 films on metal substrates,” Surf. Sci. 448,L207 (2000).
[Crossref]

Lee, M. B.

M. B. Lee, J. H. Lee, B. G. Frederick, and N. V. Richardson, “Surface structure of ultra-thin A12O3 films on metal substrates,” Surf. Sci. 448,L207 (2000).
[Crossref]

Li, C.-R.

Q. Song, C.-R. Li, J.-Y. Li, and W.-Y. Ding, “Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering,” Opt Mater, 28,1344 (2006).
[Crossref]

Li, J.-Y.

Q. Song, C.-R. Li, J.-Y. Li, and W.-Y. Ding, “Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering,” Opt Mater, 28,1344 (2006).
[Crossref]

Newman, N.

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Pearton, S.J.

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Richardson, N. V.

M. B. Lee, J. H. Lee, B. G. Frederick, and N. V. Richardson, “Surface structure of ultra-thin A12O3 films on metal substrates,” Surf. Sci. 448,L207 (2000).
[Crossref]

Rubin, M.

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

S, Y. T.

W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).

Sasaki, Y.

Y. Sasaki and K. Ishii, “Molecular dynamics analysis of three-dimensional anionic structures of molten Al2O3-Na2O-SiO2 system,” ISIJ International, 44,43 (2004).
[Crossref]

Schwartz, R. N.

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Serna, R.

M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
[Crossref]

Song, Q.

Q. Song, J.-S. Gao, X.-Y Wang, and T.-T. Wang, “Effect of pulse CO2 laser annealing on the crystallization of Er3+ doped Al2O3 thin film to a silica-on-silicon substrate,” Opt Common. 271,137 (2007).
[Crossref]

Q. Song, C.-R. Li, J.-Y. Li, and W.-Y. Ding, “Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering,” Opt Mater, 28,1344 (2006).
[Crossref]

Spinella, C.

F. Iacona, G. Franzò, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys. 87,1295 (2000).
[Crossref]

Turrell, G.

G. Turrell and J. Comet. “Raman microscopy developments and applications,” [M] J. Academic Press, (1996).

Wang, T.-T.

Q. Song, J.-S. Gao, X.-Y Wang, and T.-T. Wang, “Effect of pulse CO2 laser annealing on the crystallization of Er3+ doped Al2O3 thin film to a silica-on-silicon substrate,” Opt Common. 271,137 (2007).
[Crossref]

Wang, X.-Y

Q. Song, J.-S. Gao, X.-Y Wang, and T.-T. Wang, “Effect of pulse CO2 laser annealing on the crystallization of Er3+ doped Al2O3 thin film to a silica-on-silicon substrate,” Opt Common. 271,137 (2007).
[Crossref]

Watanabe, K.

K. Watanabe, M. Fujii, and S. Hayashi, “Photoluminescence from B-doped Si nanocrystals,” J. Appl. Phys. 90,4761 (2001).
[Crossref]

Wilson, R. G.

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Yu, W.

W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).

Zavada, J. M.

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

Zhu,

W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).

Acta. Phys Sinica Vol. (1)

W. Yu, J. He, Y. T. S, H. F, and Zhu, “Pulse laser crystallization of silicon carbon thin films,” Acta. Phys Sinica Vol. 53,6, (2004).

Appl. Phys. Lett. (1)

R. G. Wilson, R. N. Schwartz, C. R Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada, “1.54 μm photoluminescence from um and oxygen co-implanted GaN,” Appl. Phys. Lett. 65,992 (1994)
[Crossref]

ISIJ International (1)

Y. Sasaki and K. Ishii, “Molecular dynamics analysis of three-dimensional anionic structures of molten Al2O3-Na2O-SiO2 system,” ISIJ International, 44,43 (2004).
[Crossref]

J. Appl. Phys. (2)

F. Iacona, G. Franzò, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys. 87,1295 (2000).
[Crossref]

K. Watanabe, M. Fujii, and S. Hayashi, “Photoluminescence from B-doped Si nanocrystals,” J. Appl. Phys. 90,4761 (2001).
[Crossref]

NCPV and Solar Program Review Meeting. (1)

O. Ebil, R. Aparicio, S. Heedus, and Birkmire, “Growth and characterization of HWCVD Si Films on Al coated glass,” NCPV and Solar Program Review Meeting. 813 (2003).

Nuclear Instruments and Methods in Physics Research B (1)

M. Jimenez de Castro, R. Serna, J. A. Chaos, C.N. Afonso, and E.R. Hodgson, “Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films,” Nuclear Instruments and Methods in Physics Research B, 166,793 (2000).
[Crossref]

Opt Common. (1)

Q. Song, J.-S. Gao, X.-Y Wang, and T.-T. Wang, “Effect of pulse CO2 laser annealing on the crystallization of Er3+ doped Al2O3 thin film to a silica-on-silicon substrate,” Opt Common. 271,137 (2007).
[Crossref]

Opt Mater (1)

Q. Song, C.-R. Li, J.-Y. Li, and W.-Y. Ding, “Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering,” Opt Mater, 28,1344 (2006).
[Crossref]

Surf. Sci. (1)

M. B. Lee, J. H. Lee, B. G. Frederick, and N. V. Richardson, “Surface structure of ultra-thin A12O3 films on metal substrates,” Surf. Sci. 448,L207 (2000).
[Crossref]

Other (1)

G. Turrell and J. Comet. “Raman microscopy developments and applications,” [M] J. Academic Press, (1996).

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Figures (5)

Fig. 1.
Fig. 1.

Raman spectroscopy of Yb3+:Er3+ co-doped Al2O3 thin films treated by laser-induced crystallization with different irradiation time. As reference the spectra for thermal annealing and as-deposited films are shown.

Fig. 2.
Fig. 2.

Schematic representation of the laser-induced crystallization mechanism of Yb3+:Er3+ co-doped eutectic SiO2:Al2O3 thin films.

Fig. 3.
Fig. 3.

The dual wavelength energy transfer diagram for nc-Si sensitized Yb:Er doped system excitation at 980nm.

Fig. 4.
Fig. 4.

The decay trace of 800nm luminescence emission of nc-Si sample and LIC sample.

Fig. 5.
Fig. 5.

(a) The PL intensity of LIC and TA samples pumped at 980nm and 950nm. Fig 5 (b) The PL intensity of LIC and TA samples as a function of pump current from 600mA to 2400mA. The simulation dependences of the population inversion between 4I13/2 and 4I15/2 in the nc-Si sensitized Yb:Er system and Yb:Er co-doped system and pump power are also shown in the different coordinate system.

Equations (2)

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dN si 2 dt = σ si 2 I C E N Si 0 N Si 2 τ Si Ctr N Er 0 N Si 2
dN Yb 1 + Si 1 dt = I P ( σ Yb N Yb 0 + σ Si 1 N Si 0 ) N Yb 1 τ Yb Ctr ' ' N Er 0 N Yb 1 Ctr N Er 0 N Si 1

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