Abstract

We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.

© 2007 Optical Society of America

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
    [CrossRef]
  2. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
    [CrossRef]
  3. S. Lutgen, M. Kühnelt, U. Steegmüller, P. Brick, T. Albrecht, W. Reill, J. Luft, W. Späth, B. Kunert, S. Reinhard, K. Volz, and W. Stolz, "0.7W Green Frequency Doubled Semiconductor Disk Laser," in Advanced Solid-State Photonics, Technical Digest (Optical Society of America, 2005), paper MB23.
  4. G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
    [CrossRef]
  5. L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
    [CrossRef]
  6. J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
    [CrossRef] [PubMed]
  7. E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
    [CrossRef]
  8. J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
    [CrossRef]
  9. Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
    [CrossRef]
  10. A. Mooradian, "Diode lasers for displays," in Proceedings of LEOS 2006, the 19th Annual Meeting of the IEEE Lasers & Electro-Optics Society (Laser and Electro-optics Society, IEEE, 2006), pp. 328-329.

2006

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

2005

2004

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

2003

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

2000

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

1997

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Albrecht, T.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Bedford, R.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Brick, P.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Burns, D.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Calvez, S.

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
[CrossRef] [PubMed]

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Cho, S.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Dawson, M. D.

Dawson, M.D.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Ecker, I.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

Fallahi, M.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Fan, L.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Gerster, E.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

Hader, J.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Hahn, C.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Hastie, J. E.

Hopkins, J.-M.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Hsu, T.-C.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Jeon, C.W.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Jouhti, T.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Kaneda, Y.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Kim, G. B.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Kim, J.-Y.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Kim, K.-S.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Kim, T.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Koch, S. W.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Laakso, A.

Lee, J.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Lee, S.-M.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Leinonen, T.

Liau, Z. L.

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

Lim, S.-J.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Lorch, S.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

Luft, J.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Lutgen, S.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Lyytikäinen, J.

Menzel, S.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

Moloney, J. V.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Murray, J. T.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Park, Y.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Pessa, M.

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
[CrossRef] [PubMed]

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Reill, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Smith, S.A.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Späth, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Stolz, W.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Sun, H.D.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Unger, P.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

Yoo, J.

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

Zakharian, A. R.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Appl. Phys. Lett.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

G. B. Kim, J.-Y. Kim, J. Lee, J. Yoo, K.-S. Kim, S.-M. Lee, S. Cho, S.-J. Lim, T. Kim, and Y. Park, "End-pumped green and blue vertical external cavity surface emitting laser devices," Appl. Phys. Lett. 89, 181106 (2006).
[CrossRef]

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

IEE Electron. Lett.

J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W cw GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm," IEE Electron. Lett. 40, 30-31 (2004).
[CrossRef]

IEEE Photon. Technol. Lett.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

J. Appl. Phys.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94,7397-7401 (2003).
[CrossRef]

Opt. Express

Other

S. Lutgen, M. Kühnelt, U. Steegmüller, P. Brick, T. Albrecht, W. Reill, J. Luft, W. Späth, B. Kunert, S. Reinhard, K. Volz, and W. Stolz, "0.7W Green Frequency Doubled Semiconductor Disk Laser," in Advanced Solid-State Photonics, Technical Digest (Optical Society of America, 2005), paper MB23.

A. Mooradian, "Diode lasers for displays," in Proceedings of LEOS 2006, the 19th Annual Meeting of the IEEE Lasers & Electro-Optics Society (Laser and Electro-optics Society, IEEE, 2006), pp. 328-329.

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Figures (4)

Fig. 1.
Fig. 1.

Schematics of laser setup: The laser cavity is formed of the gain mirror and three high reflective curved mirrors. Frequency doubled emission was observed from the outputs of mirrors M2 and M3. RoC=Radius of Curvature, D=distance between adjacent mirrors, BBO=barium borate crystal

Fig. 2.
Fig. 2.

Laser spectrum around 1230 nm without the glass etalon and BBO crystal inserted in the cavity.

Fig. 3.
Fig. 3.

Ten narrow-line emission spectra at the red wavelength tuned with the Fabry-Perot glass etalon.

Fig. 4.
Fig. 4.

Light output characteristics at fundamental and frequency doubled wavelength.

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