Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots

C. H. Chan; Y. S. Huang; J. S Wang; K. K. Tiong

doi:10.1364/OE.15.001898

Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots

C. H. Chan, Y. S. Huang, J. S Wang, and K. K. Tiong

Optics Express
Vol. 15,
Issue 4,
pp. 1898-1906
(2007)
•doi: 10.1364/OE.15.001898

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C. H. Chan, Y. S. Huang, J. S Wang, and K. K. Tiong, "Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots," Opt. Express 15, 1898-1906 (2007)

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Abstract

The surface photovoltage (SPV) spectra of a series of vertically stacked self-organized InAs/GaAs quantum dot (QD)-based laser structures with different spacer layer (SL) thickness were obtained as a function of temperature (77 K ≤ T ≤ 300 K). A decrease of the compressive stress for thinner SL samples arising from coherent relaxation enables us to designate the effect of material intermixing as the most probable mechanism of the energetic blueshift of the observed structures. The turnaround characteristic of the temperature-dependent spectral intensity shows that the reduced SPV signal at higher temperature is limited by the carrier scattering and at lower temperature it is governed by the magnitude of built-in electric field and the escape efficiency of the photogenerated carriers. The dot states to be blueshifted by material intermixing are expected to have higher escape rate for carriers out of QDs, thus resulting in lower measurable temperature for the detected SPV signal. The relatively higher signal at low temperature for the 10 nm SL sample provides a direct evidence of the tunneling process of carriers in the stacked QD layers.

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D. Pan, E. Towe, and S. Kennerly, “Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors,” Appl. Phys. Lett. 73,1937–1939 (1998).
[Crossref]
S. -W. Lee, K. Hirakawa, and Y. Shimada, “Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures,” Appl. Phys. Lett. 75,1428–1430 (1999).
[Crossref]
D. G. Deppe, D. L. Huffaker, S. Csufak, Z. Zou, G. Park, and O. B. Shchekin, “Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers,” IEEE J. Quantum Electron. 35,1238–1246 (1999).
[Crossref]
D. Loss and D. P. DiVincenzo, “Quantum computation with quantum dots,” Phys. Rev. A 57,120–126 (1998).
[Crossref]
W. Sheng and J. -P. Leburton, “Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 78,1258–1260 (2001).
[Crossref]
G. T. Liu, A. Stinz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. T. Malloy, and L. F. Lester, “The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures,” IEEE J. Quantum Electron. 36,1272–1279 (2000).
[Crossref]
G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., “Vertically aligned and electronically coupled growth induced InAs islands in GaAs,” Phys. Rev. Lett. 76,952–955 (1996).
[Crossref] [PubMed]
J. S. Wang, R. S. Hsiao, J. F. Chen, C. S. Yang, G. Lin, C. Y. Liang, C. M. Lai, H. Y. Liu, T. W. Chi, and J. Y. Chi, “Engineering laser gain spectrum using electronic vertically coupled InAs/GaAs quantum dots,” IEEE Photonics Technol. Lett. 17,1590–1592 (2005).
[Crossref]
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsl’nikov, and Zh. I. Alferov, “Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix,” Semiconductors 31,571–574 (1997).
[Crossref]
J. -Y. Marzin, J. -M. Gerard, A. Izraël, D. Barrier, and G. Bastard, “Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs,” Phys. Rev. Lett. 73,716–719 (1994).
[Crossref] [PubMed]
M. Grundmann, J. Christen, N. N. Ledenstov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, and Zh. I. Alferov, “Ultranarrow luminescence lines from single quantum dots,” Phys. Rev. Lett. 74,4043–4046 (1995).
[Crossref] [PubMed]
D. Bimberg, M. Grundmann, and N. N. Ledenstov, Quantum Dot Heterostructures (John Wiley & Sons, Chichester, 1999).
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[Crossref]
K. H. Schmidt, G. Mederiros-Ribeiro, M. Oestreich, P. M. Petroff, and G. H. Döhler, “Carrier relaxation and electronic structure in InAs self-assembled quantum dots,” Phys. Rev. B 54,11346–11353 (1996).
[Crossref]
A. M. Adawi, E. A. Zibik, L. R. Wilson, A. Lemaître, J. W. Cockburn, M. S. Skolnick, M. Hopkinson, and G. Hill, “Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots,” Appl. Phys. Lett. 83,602–604 (2003).
[Crossref]
L. Kronik and Y. Shapira, “Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering,” Surf. Interface Anal. 31,954–965 (2001).
[Crossref]
C. H. Chan, H. S. Chen, C. W. Kao, H. P. Hsu, Y. S. Huang, and J. S. Wang, “Investigation of multilayer electronic vertically coupled InAs/GaAs quantum dot structures using surface photovoltage spectroscopy,” Appl. Phys. Lett. 89,22114–22116 (2006).
[Crossref]
C. H. Chan, H. S. Chen, C. W. Kao, H. P. Hsu, Y. S. Huang, and J. S. Wang, “Surface photovoltage spectroscopy and photoluminescence study of vertically coupled self-assembled InAs/GaAs quantum dot structures,” J. Appl. Phys. 100,64301–64306 (2006).
[Crossref]
B. Q. Sun, Z. D. Liu, D. S. Jiang, J. Q. Wu, Z. Y. Xu, Y. Q. Wang, J. N. Wang, and W. K. Ge, “Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots,” Appl. Phys. Lett. 73,2657–2659 (1998).
[Crossref]
V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul’nikov, N. Yu. Gordeev, S. V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, and U. Gösele, “Low-threshold injection lasers based on vertically coupled quantum dots,” J. Crystal Growth 175/176,689–695 (1997).
[Crossref]
M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]
J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
[Crossref]
J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures,” Nanotechnology 18,15401–15405 (2007).
[Crossref]
H. Heidemeyer, S. Kiravittaya, C. Müller, N. Y. Jin-Phillipp, and O. G. Schmidt, “Closely stacked InAs/GaAs quantum dots grown at low growth rate,” Appl. Phys. Lett. 80,1544–1546 (2002).
[Crossref]
J. R. Downes, D. A. Faux, and E. P. O’Reilly, “A simple method for calculating strain distributions in quantum dot structures,” J. Appl. Phys. 81,6700–6702 (1997).
[Crossref]
W. Sheng and J. -P. Leburton, “Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Phys. Rev. Lett. 88,167401–167404 (2002).
[Crossref] [PubMed]
Gh. Dumitras, H. Riechert, H. Porteanu, and F. Koch, “Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures,” Phys. Rev. B 66,205324–205331 (2002).
[Crossref]
M. Bayer and F. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots,” Phys. Rev. B 65,41308–41311 (2002).
[Crossref]
B. L. Anderson and R. L. Anderson, Fundamentals of Semiconductor Devices (McGraw-Hill, New York, 2005).

2007 (1)

J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures,” Nanotechnology 18,15401–15405 (2007).
[Crossref]

2006 (2)

C. H. Chan, H. S. Chen, C. W. Kao, H. P. Hsu, Y. S. Huang, and J. S. Wang, “Investigation of multilayer electronic vertically coupled InAs/GaAs quantum dot structures using surface photovoltage spectroscopy,” Appl. Phys. Lett. 89,22114–22116 (2006).
[Crossref]

C. H. Chan, H. S. Chen, C. W. Kao, H. P. Hsu, Y. S. Huang, and J. S. Wang, “Surface photovoltage spectroscopy and photoluminescence study of vertically coupled self-assembled InAs/GaAs quantum dot structures,” J. Appl. Phys. 100,64301–64306 (2006).
[Crossref]

2005 (1)

J. S. Wang, R. S. Hsiao, J. F. Chen, C. S. Yang, G. Lin, C. Y. Liang, C. M. Lai, H. Y. Liu, T. W. Chi, and J. Y. Chi, “Engineering laser gain spectrum using electronic vertically coupled InAs/GaAs quantum dots,” IEEE Photonics Technol. Lett. 17,1590–1592 (2005).
[Crossref]

2003 (1)

A. M. Adawi, E. A. Zibik, L. R. Wilson, A. Lemaître, J. W. Cockburn, M. S. Skolnick, M. Hopkinson, and G. Hill, “Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots,” Appl. Phys. Lett. 83,602–604 (2003).
[Crossref]

2002 (5)

H. Heidemeyer, S. Kiravittaya, C. Müller, N. Y. Jin-Phillipp, and O. G. Schmidt, “Closely stacked InAs/GaAs quantum dots grown at low growth rate,” Appl. Phys. Lett. 80,1544–1546 (2002).
[Crossref]

J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
[Crossref]

W. Sheng and J. -P. Leburton, “Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Phys. Rev. Lett. 88,167401–167404 (2002).
[Crossref] [PubMed]

Gh. Dumitras, H. Riechert, H. Porteanu, and F. Koch, “Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures,” Phys. Rev. B 66,205324–205331 (2002).
[Crossref]

M. Bayer and F. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots,” Phys. Rev. B 65,41308–41311 (2002).
[Crossref]

2001 (2)

L. Kronik and Y. Shapira, “Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering,” Surf. Interface Anal. 31,954–965 (2001).
[Crossref]

W. Sheng and J. -P. Leburton, “Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 78,1258–1260 (2001).
[Crossref]

2000 (2)

G. T. Liu, A. Stinz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. T. Malloy, and L. F. Lester, “The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures,” IEEE J. Quantum Electron. 36,1272–1279 (2000).
[Crossref]

M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]

1999 (2)

S. -W. Lee, K. Hirakawa, and Y. Shimada, “Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures,” Appl. Phys. Lett. 75,1428–1430 (1999).
[Crossref]

D. G. Deppe, D. L. Huffaker, S. Csufak, Z. Zou, G. Park, and O. B. Shchekin, “Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers,” IEEE J. Quantum Electron. 35,1238–1246 (1999).
[Crossref]

1998 (3)

D. Loss and D. P. DiVincenzo, “Quantum computation with quantum dots,” Phys. Rev. A 57,120–126 (1998).
[Crossref]

D. Pan, E. Towe, and S. Kennerly, “Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors,” Appl. Phys. Lett. 73,1937–1939 (1998).
[Crossref]

B. Q. Sun, Z. D. Liu, D. S. Jiang, J. Q. Wu, Z. Y. Xu, Y. Q. Wang, J. N. Wang, and W. K. Ge, “Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots,” Appl. Phys. Lett. 73,2657–2659 (1998).
[Crossref]

1997 (3)

V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul’nikov, N. Yu. Gordeev, S. V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, and U. Gösele, “Low-threshold injection lasers based on vertically coupled quantum dots,” J. Crystal Growth 175/176,689–695 (1997).
[Crossref]

M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsl’nikov, and Zh. I. Alferov, “Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix,” Semiconductors 31,571–574 (1997).
[Crossref]

J. R. Downes, D. A. Faux, and E. P. O’Reilly, “A simple method for calculating strain distributions in quantum dot structures,” J. Appl. Phys. 81,6700–6702 (1997).
[Crossref]

1996 (2)

G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., “Vertically aligned and electronically coupled growth induced InAs islands in GaAs,” Phys. Rev. Lett. 76,952–955 (1996).
[Crossref] [PubMed]

K. H. Schmidt, G. Mederiros-Ribeiro, M. Oestreich, P. M. Petroff, and G. H. Döhler, “Carrier relaxation and electronic structure in InAs self-assembled quantum dots,” Phys. Rev. B 54,11346–11353 (1996).
[Crossref]

1995 (1)

M. Grundmann, J. Christen, N. N. Ledenstov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, and Zh. I. Alferov, “Ultranarrow luminescence lines from single quantum dots,” Phys. Rev. Lett. 74,4043–4046 (1995).
[Crossref] [PubMed]

1994 (2)

D. Leonard, S. Fared, K. Pond, Y. H. Zhang, J. L. Merz, and P. M. Petroff, “Structural and optical properties of self-assembled InGaAs quantum dots,” J. Vac. Sci. Technol. B 12,2516–2520 (1994).
[Crossref]

J. -Y. Marzin, J. -M. Gerard, A. Izraël, D. Barrier, and G. Bastard, “Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs,” Phys. Rev. Lett. 73,716–719 (1994).
[Crossref] [PubMed]

Adawi, A. M.

Alferov, Zh. I.

Anderson, B. L.

B. L. Anderson and R. L. Anderson, Fundamentals of Semiconductor Devices (McGraw-Hill, New York, 2005).

Anderson, R. L.

B. L. Anderson and R. L. Anderson, Fundamentals of Semiconductor Devices (McGraw-Hill, New York, 2005).

Barrier, D.

Bastard, G.

Bayer, M.

M. Bayer and F. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots,” Phys. Rev. B 65,41308–41311 (2002).
[Crossref]

Bert, N. A.

Bimberg, D.

D. Bimberg, M. Grundmann, and N. N. Ledenstov, Quantum Dot Heterostructures (John Wiley & Sons, Chichester, 1999).

Böhrer, J.

Chan, C. H.

Chen, H. S.

Chen, J. F.

Chen, T. T.

Chen, Y. F.

Chi, J. Y.

Chi, T. W.

Christen, J.

Cockburn, J. W.

Csufak, S.

Deppe, D. G.

DiVincenzo, D. P.

D. Loss and D. P. DiVincenzo, “Quantum computation with quantum dots,” Phys. Rev. A 57,120–126 (1998).
[Crossref]

Döhler, G. H.

Downes, J. R.

J. R. Downes, D. A. Faux, and E. P. O’Reilly, “A simple method for calculating strain distributions in quantum dot structures,” J. Appl. Phys. 81,6700–6702 (1997).
[Crossref]

Dumitras, Gh.

Gh. Dumitras, H. Riechert, H. Porteanu, and F. Koch, “Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures,” Phys. Rev. B 66,205324–205331 (2002).
[Crossref]

Eberl, K.

M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]

Egorov, A. Yu.

Fared, S.

Faux, D. A.

J. R. Downes, D. A. Faux, and E. P. O’Reilly, “A simple method for calculating strain distributions in quantum dot structures,” J. Appl. Phys. 81,6700–6702 (1997).
[Crossref]

Forchel, F.

M. Bayer and F. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots,” Phys. Rev. B 65,41308–41311 (2002).
[Crossref]

Ge, W. K.

Gerard, J. -M.

Gordeev, N. Yu.

Gösele, U.

Gray, A. L.

Grundmann, M.

D. Bimberg, M. Grundmann, and N. N. Ledenstov, Quantum Dot Heterostructures (John Wiley & Sons, Chichester, 1999).

Harris, J. S.

Heidemeyer, H.

Heydenreich, J.

Hill, G.

Hirakawa, K.

Hopkinson, M.

Hsiao, R. S.

Hsu, H. P.

Huang, Y. S.

Huffaker, D. L.

Hulicius, E.

Izraël, A.

Jiang, D. S.

Jin-Phillipp, N. Y.

Kao, C. W.

Kennerly, S.

D. Pan, E. Towe, and S. Kennerly, “Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors,” Appl. Phys. Lett. 73,1937–1939 (1998).
[Crossref]

Kiravittaya, S.

Koch, F.

Gh. Dumitras, H. Riechert, H. Porteanu, and F. Koch, “Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures,” Phys. Rev. B 66,205324–205331 (2002).
[Crossref]

Kop’ev, P. S.

Kosogov, A. O.

Kovsh, A. R.

Kronik, L.

Lai, C. M.

Leburton, J. -P.

W. Sheng and J. -P. Leburton, “Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Phys. Rev. Lett. 88,167401–167404 (2002).
[Crossref] [PubMed]

W. Sheng and J. -P. Leburton, “Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 78,1258–1260 (2001).
[Crossref]

Ledenstov, N. N.

D. Bimberg, M. Grundmann, and N. N. Ledenstov, Quantum Dot Heterostructures (John Wiley & Sons, Chichester, 1999).

Ledentsov, N. N.

Lee, S. -W.

Lemaître, A.

Leonard, D.

Lester, L. F.

Li, H.

Liang, C. Y.

Lin, G.

Lin, H. H.

Lin, Y. R.

Lipinski, M. O.

M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]

Liu, G. T.

Liu, H. Y.

Liu, Z. D.

Loss, D.

D. Loss and D. P. DiVincenzo, “Quantum computation with quantum dots,” Phys. Rev. A 57,120–126 (1998).
[Crossref]

Maksimov, M. V.

Malloy, K. T.

Marshall, A. F.

Marzin, J. -Y.

Maximov, M. V.

Mederiros-Ribeiro, G.

Melichar, K.

Merz, J. L.

Müller, C.

Newell, T. C.

O’Reilly, E. P.

J. R. Downes, D. A. Faux, and E. P. O’Reilly, “A simple method for calculating strain distributions in quantum dot structures,” J. Appl. Phys. 81,6700–6702 (1997).
[Crossref]

Oestreich, M.

Oswald, J.

Pan, D.

D. Pan, E. Towe, and S. Kennerly, “Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors,” Appl. Phys. Lett. 73,1937–1939 (1998).
[Crossref]

Pangrác, J.

Park, G.

Petroff, P. M.

Pond, K.

Porteanu, H.

Gh. Dumitras, H. Riechert, H. Porteanu, and F. Koch, “Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures,” Phys. Rev. B 66,205324–205331 (2002).
[Crossref]

Richter, U.

Riechert, H.

Gh. Dumitras, H. Riechert, H. Porteanu, and F. Koch, “Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures,” Phys. Rev. B 66,205324–205331 (2002).
[Crossref]

Ruvimov, S. S.

Sakharov, A. V.

Samochin, E.

Schmidt, K. H.

Schmidt, O. G.

M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]

Schuler, H.

M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]

Schuler, O. G.

M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]

Shapira, Y.

Shchekin, O. B.

Shen, J. L.

Sheng, W.

W. Sheng and J. -P. Leburton, “Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Phys. Rev. Lett. 88,167401–167404 (2002).
[Crossref] [PubMed]

W. Sheng and J. -P. Leburton, “Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 78,1258–1260 (2001).
[Crossref]

Shernyakov, Yu. M.

Shimada, Y.

Shu, G. W.

Šimecek, T.

Skolnick, M. S.

Solomon, G. S.

Stinz, A.

Sun, B. Q.

Toušek, J.

Toušková, J.

Towe, E.

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Fig. 1.

The SPV spectra of 30 layers vertically stacked InAs/GaAs QDs with different spacer layer thickness at the temperature of 150 and 300 K. For the purpose of comparison, the SPV spectrum of the single QD layer (reference sample) at 300 K is also displayed. The arrows indicate QD related transition energies obtained from the fitting. The dotted lines in the reference and the 30 nm SL samples show the deconvolution of SPV spectra into three Gaussian features.

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Fig. 2.

The cross-sectional TEM image of the InAs/GaAs VCQDs with 15 nm GaAs SL. Several dot columns with vertical alignment are present.

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Fig. 3.

(a) The layered structure of 30 layers coupled-dot system is illustrated. The origin of the coordinate system is at the QD center in the base dot layer; (b) The strain components ε_xx and ε_zz, plotted along the growth direction (Z axis) are presented for a single QD embedded in a GaAs matrix. (c)-(e) display the calculated values of strain components ε_xx and ε_zz for the VCQD structures with SL thickness of 30, 15, and 10 nm, respectively.

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Fig. 4.

Temperature dependent SPV spectra of 30 layers vertically stacked InAs/GaAs QDs with GaAs space layer of (a) 30 nm, (b) 15 nm, and (c) 10 nm. The inset in each diagram shows the variation in spectral peak intensity of QD₁ with temperature.

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Equations (1)

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S \propto α_{Q D} (h v) \times [f_{e} (hv, T) d_{1} + f_{h} (hv, T) d_{2}] .