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[Crossref]
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J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
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[Crossref]
D. Pan, E. Towe, and S. Kennerly, “Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors,” Appl. Phys. Lett. 73,1937–1939 (1998).
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J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
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[Crossref]
K. H. Schmidt, G. Mederiros-Ribeiro, M. Oestreich, P. M. Petroff, and G. H. Döhler, “Carrier relaxation and electronic structure in InAs self-assembled quantum dots,” Phys. Rev. B 54,11346–11353 (1996).
[Crossref]
D. Leonard, S. Fared, K. Pond, Y. H. Zhang, J. L. Merz, and P. M. Petroff, “Structural and optical properties of self-assembled InGaAs quantum dots,” J. Vac. Sci. Technol. B 12,2516–2520 (1994).
[Crossref]
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M. Grundmann, J. Christen, N. N. Ledenstov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, and Zh. I. Alferov, “Ultranarrow luminescence lines from single quantum dots,” Phys. Rev. Lett. 74,4043–4046 (1995).
[Crossref]
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Gh. Dumitras, H. Riechert, H. Porteanu, and F. Koch, “Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures,” Phys. Rev. B 66,205324–205331 (2002).
[Crossref]
M. Grundmann, J. Christen, N. N. Ledenstov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, and Zh. I. Alferov, “Ultranarrow luminescence lines from single quantum dots,” Phys. Rev. Lett. 74,4043–4046 (1995).
[Crossref]
[PubMed]
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsl’nikov, and Zh. I. Alferov, “Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix,” Semiconductors 31,571–574 (1997).
[Crossref]
J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
[Crossref]
K. H. Schmidt, G. Mederiros-Ribeiro, M. Oestreich, P. M. Petroff, and G. H. Döhler, “Carrier relaxation and electronic structure in InAs self-assembled quantum dots,” Phys. Rev. B 54,11346–11353 (1996).
[Crossref]
H. Heidemeyer, S. Kiravittaya, C. Müller, N. Y. Jin-Phillipp, and O. G. Schmidt, “Closely stacked InAs/GaAs quantum dots grown at low growth rate,” Appl. Phys. Lett. 80,1544–1546 (2002).
[Crossref]
M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]
M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]
M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, “Strain-induced material intermixing of InAs quantum dots in GaAs,” Appl. Phys. Lett. 77,1789–1791 (2000).
[Crossref]
L. Kronik and Y. Shapira, “Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering,” Surf. Interface Anal. 31,954–965 (2001).
[Crossref]
D. G. Deppe, D. L. Huffaker, S. Csufak, Z. Zou, G. Park, and O. B. Shchekin, “Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers,” IEEE J. Quantum Electron. 35,1238–1246 (1999).
[Crossref]
J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures,” Nanotechnology 18,15401–15405 (2007).
[Crossref]
W. Sheng and J. -P. Leburton, “Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Phys. Rev. Lett. 88,167401–167404 (2002).
[Crossref]
[PubMed]
W. Sheng and J. -P. Leburton, “Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 78,1258–1260 (2001).
[Crossref]
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsl’nikov, and Zh. I. Alferov, “Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix,” Semiconductors 31,571–574 (1997).
[Crossref]
V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul’nikov, N. Yu. Gordeev, S. V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, and U. Gösele, “Low-threshold injection lasers based on vertically coupled quantum dots,” J. Crystal Growth 175/176,689–695 (1997).
[Crossref]
S. -W. Lee, K. Hirakawa, and Y. Shimada, “Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures,” Appl. Phys. Lett. 75,1428–1430 (1999).
[Crossref]
J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures,” Nanotechnology 18,15401–15405 (2007).
[Crossref]
J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
[Crossref]
A. M. Adawi, E. A. Zibik, L. R. Wilson, A. Lemaître, J. W. Cockburn, M. S. Skolnick, M. Hopkinson, and G. Hill, “Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots,” Appl. Phys. Lett. 83,602–604 (2003).
[Crossref]
G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., “Vertically aligned and electronically coupled growth induced InAs islands in GaAs,” Phys. Rev. Lett. 76,952–955 (1996).
[Crossref]
[PubMed]
G. T. Liu, A. Stinz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. T. Malloy, and L. F. Lester, “The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures,” IEEE J. Quantum Electron. 36,1272–1279 (2000).
[Crossref]
B. Q. Sun, Z. D. Liu, D. S. Jiang, J. Q. Wu, Z. Y. Xu, Y. Q. Wang, J. N. Wang, and W. K. Ge, “Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots,” Appl. Phys. Lett. 73,2657–2659 (1998).
[Crossref]
J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
[Crossref]
J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimecek, “Photovoltage spectroscopy of InAs/GaAs quantum dot structures,” J. Appl. Phys. 91,10103–10106 (2002).
[Crossref]
D. Pan, E. Towe, and S. Kennerly, “Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors,” Appl. Phys. Lett. 73,1937–1939 (1998).
[Crossref]
G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., “Vertically aligned and electronically coupled growth induced InAs islands in GaAs,” Phys. Rev. Lett. 76,952–955 (1996).
[Crossref]
[PubMed]
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsl’nikov, and Zh. I. Alferov, “Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix,” Semiconductors 31,571–574 (1997).
[Crossref]
V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul’nikov, N. Yu. Gordeev, S. V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, and U. Gösele, “Low-threshold injection lasers based on vertically coupled quantum dots,” J. Crystal Growth 175/176,689–695 (1997).
[Crossref]
V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul’nikov, N. Yu. Gordeev, S. V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, and U. Gösele, “Low-threshold injection lasers based on vertically coupled quantum dots,” J. Crystal Growth 175/176,689–695 (1997).
[Crossref]
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsl’nikov, and Zh. I. Alferov, “Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix,” Semiconductors 31,571–574 (1997).
[Crossref]
M. Grundmann, J. Christen, N. N. Ledenstov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, and Zh. I. Alferov, “Ultranarrow luminescence lines from single quantum dots,” Phys. Rev. Lett. 74,4043–4046 (1995).
[Crossref]
[PubMed]
G. T. Liu, A. Stinz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. T. Malloy, and L. F. Lester, “The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures,” IEEE J. Quantum Electron. 36,1272–1279 (2000).
[Crossref]
B. Q. Sun, Z. D. Liu, D. S. Jiang, J. Q. Wu, Z. Y. Xu, Y. Q. Wang, J. N. Wang, and W. K. Ge, “Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots,” Appl. Phys. Lett. 73,2657–2659 (1998).
[Crossref]
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