Abstract

We report on a GaInNAs/GaAs semiconductor disk laser frequency-doubled to produce orange-red radiation. The disk laser operates at a fundamental wavelength of 1224 nm and delivers an output power of 2.68 W in the visible region with an optical-to-optical conversion efficiency of 7.4 %. The frequency-converted signal could be launched into a single-mode optical fiber with 70–78 % coupling efficiency, demonstrating good beam quality for the visible radiation. Using a Fabry-Pérot glass etalon the emission wavelength could be tuned over an 8 nm spectral range.

© 2007 Optical Society of America

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams," IEEE Photon. Tech. Lett. 9, 1063-1065 (1997).
    [CrossRef]
  2. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
    [CrossRef]
  3. L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
    [CrossRef]
  4. J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
    [CrossRef]
  5. S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
    [CrossRef]
  6. J. E. Hastie, S. Calvez, D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
    [CrossRef] [PubMed]
  7. E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
    [CrossRef]
  8. C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
    [CrossRef]
  9. J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
    [CrossRef]
  10. A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
    [CrossRef] [PubMed]
  11. J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
    [CrossRef]
  12. W. J. Alford, T. D. Raymond, and A. A. Allerman, "High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser," J. Opt. Soc. Am. B 19, 663-666 (2002).
    [CrossRef]
  13. A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
    [CrossRef]
  14. Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
    [CrossRef]

2007 (3)

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

2006 (2)

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
[CrossRef]

2005 (3)

C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
[CrossRef]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

J. E. Hastie, S. Calvez, D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
[CrossRef] [PubMed]

2004 (1)

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

2003 (2)

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

2002 (1)

2000 (1)

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

1997 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams," IEEE Photon. Tech. Lett. 9, 1063-1065 (1997).
[CrossRef]

Albrecht, T.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Alford, W. J.

Allerman, A. A.

Bedford, R.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Brick, P.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Burns, D.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Calvez, S.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

J. E. Hastie, S. Calvez, D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
[CrossRef] [PubMed]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Chilla, J. L. A.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Dawson, D.

Dawson, M. D.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Ecker, I.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

Fallahi, M.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Fan, L.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Gerster, E.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

Guina, M.

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

Hader, J.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Hahn, C.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams," IEEE Photon. Tech. Lett. 9, 1063-1065 (1997).
[CrossRef]

Härkönen, A.

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

Hastie, J. E.

J. E. Hastie, S. Calvez, D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
[CrossRef] [PubMed]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

Hilbich, S.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Hopkins, J.-M.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Hsu, T.-C.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Jeon, C. W.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Jouhti, T.

C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Kaneda, Y.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Kannengiesser, C.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Kemp, A. J.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

Kim, T.

J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
[CrossRef]

Koch, S. W.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Konttinen, J.

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams," IEEE Photon. Tech. Lett. 9, 1063-1065 (1997).
[CrossRef]

Laakso, A.

Lee, J. H.

J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
[CrossRef]

Lee, S.M.

J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
[CrossRef]

Leinonen, T.

Liau, Z. L.

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

Lorch, S.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

Luft, J.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Lutgen, S.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Lyytikäinen, J.

Menzel, S.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

Moloney, J. V.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams," IEEE Photon. Tech. Lett. 9, 1063-1065 (1997).
[CrossRef]

Mueller, J.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Murray, J. T.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Okhotnikov, O. G.

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

Orsila, L.

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

Ostroumov, V. G.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Park, Y. J.

J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
[CrossRef]

Peng, C. S.

C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
[CrossRef]

Pessa, M.

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
[CrossRef]

J. E. Hastie, S. Calvez, D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
[CrossRef] [PubMed]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Rautiainen, J.

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

Raymond, T. D.

Reill, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Seelert, W. R.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Smith, S. A.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Spath, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams," IEEE Photon. Tech. Lett. 9, 1063-1065 (1997).
[CrossRef]

Stolz, W.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Sun, H. D.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

Tuomisto, P.

A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, "High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm," Opt. Express 15, 3224-3229 (2007).
[CrossRef] [PubMed]

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

Unger, P.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

Valentine, G. J.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

von Elm, R.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Weiss, E. S.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Zakharian, A. R.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

Zhou, H.

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Appl. Phys. Lett. (4)

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003).
[CrossRef]

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by frequency doubling," Appl. Phys. Lett. 88, 251117 (2006).
[CrossRef]

J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
[CrossRef]

Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
[CrossRef]

Electron. Lett. (2)

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 ?m," Electron. Lett. 40, 30-31 (2004).
[CrossRef]

J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhotnikov, "1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser," Electron. Lett. 43, 980-981 (2007).
[CrossRef]

IEEE J. Quantum. Electron. (1)

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. Quantum. Electron. 41, 148-155 (2005).
[CrossRef]

IEEE Photon. Tech. Lett. (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams," IEEE Photon. Tech. Lett. 9, 1063-1065 (1997).
[CrossRef]

J. Appl. Phys. (1)

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
[CrossRef]

J. Opt. Soc. Am. B (1)

Opt. Express (2)

Proc. SPIE (2)

C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
[CrossRef]

S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
[CrossRef]

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Figures (5)

Fig. 1.
Fig. 1.

Experimental setup, consisting of three curved mirrors and the gain mirror forming a Zcavity. The output light was coupled to an optical fiber located behind mirror M3. RoC=Radius of Curvature, D=Distance between mirrors.

Fig. 2.
Fig. 2.

(a) Laser spectra around 1.2 µm and (b) corresponding frequency-doubled spectra.

Fig. 3.
Fig. 3.

(a) Output characteristics of the laser showing both the fundamental and frequencydoubled power as a function of pump power. The value of pump power used in this plot takes into account the fraction of the light reflected (~17.6 %) from the surface of the bonded sample. Nearly 2.7 W of visible radiation has been achieved. The total power leakage from the cavity at 1224 nm was found to be negligible. (b) Normalized power as a function of the polarizer angle showing that fundamental and frequency-converted beams are linearly polarized in orthogonal directions.

Fig. 4.
Fig. 4.

Narrow line tuning spectra at the red measured near threshold. The tuning was achieved by tilting the 25-µm thick Fabry-Pérot glass etalon inside the cavity.

Fig. 5.
Fig. 5.

(a) Transverse beam profile of the red beam, with a Gaussian fit in vertical and horizontal directions. Inset: Corresponding picture of the beam. (b) Coupling efficiency to a single-mode fiber as a function of fiber-coupled power at 612 nm from single laser output.

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