Abstract

Optical feedback tolerance is experimentally investigated on a 600-μm-long quantum-dash based Fabry-Pérot laser emitting at 1.57μm. While quantum-dashes are structurally intermediate to quantum-wells and quantum-dots, the observed behaviour is distinctly like that of a quantum-well based laser but with greater stability. Coherence collapse and low-frequency fluctuation regimes are observed and are reported here. The onset of the coherence collapse regime is experimentally determined and is found to vary from -29 dB to -21 dB external feedback level when increasing the current from twice to nine times the threshold current.

© 2007 Optical Society of America

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  1. R. W. Tkach and A. R. Chraplyvy, "Regimes of Feedback Effects in 1.5-µm Distributed Feedback Lasers," IEEE J. Lightwave Technol. 4, 1655-1661 (1986).Q1
    [CrossRef]
  2. D. Lenstra, B. H. Verbeek, and A. J. Den Boef, "Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback," IEEE J. Quantum Electron. 21, 674-679 (1985).
    [CrossRef]
  3. J. Mork, B. Tromborg, and P. L. Christiansen, "Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis," IEEE J. Quantum Electron. 24, 123-133 (1988).
    [CrossRef]
  4. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
    [CrossRef]
  5. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
    [CrossRef]
  6. H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
    [CrossRef]
  7. D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
    [CrossRef]
  8. D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, "Sensitivity of quantum-dot semiconductor lasers to optical feedback," Opt. Lett. 29, 1072-1074 (2004).
    [CrossRef] [PubMed]
  9. R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
    [CrossRef]
  10. R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum-dash lasers," IEEE Photon. Technol. 14, 735-737 (2002).
    [CrossRef]
  11. F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
    [CrossRef]
  12. G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
    [CrossRef]
  13. S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
    [CrossRef]
  14. C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor of semiconductor lasers," Appl. Phys. Lett. 42, 328-330 (1983).
    [CrossRef]
  15. O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, "Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers," Electron. Lett. 41, 911-912 (2005).
    [CrossRef]
  16. A. Olsson and C. L. Tang, "Coherent optical interference effects in external cavity semiconductor lasers, " IEEE J. Quantum Electron. 17, 1320-1323 (1981).
    [CrossRef]
  17. B. W. Hakki and T. L. Paoli, "CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain," J. Appl. Phys. 44, 4113-4119 (1973).
    [CrossRef]
  18. J. Ye, H. Li, and J. G. McInerney, "Period-doubling route to chaos in a semiconductor laser with weak optical feedback," Phys. Rev. A 47, 2249-2252 (1993).
    [CrossRef] [PubMed]
  19. G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, "Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback," Europhys. Lett. 40, 619-624 (1997).
    [CrossRef]

2007 (2)

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

2006 (1)

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

2005 (1)

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, "Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers," Electron. Lett. 41, 911-912 (2005).
[CrossRef]

2004 (1)

2003 (2)

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

2002 (1)

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum-dash lasers," IEEE Photon. Technol. 14, 735-737 (2002).
[CrossRef]

2001 (1)

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

1999 (1)

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
[CrossRef]

1997 (2)

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
[CrossRef]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, "Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback," Europhys. Lett. 40, 619-624 (1997).
[CrossRef]

1993 (1)

J. Ye, H. Li, and J. G. McInerney, "Period-doubling route to chaos in a semiconductor laser with weak optical feedback," Phys. Rev. A 47, 2249-2252 (1993).
[CrossRef] [PubMed]

1988 (1)

J. Mork, B. Tromborg, and P. L. Christiansen, "Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis," IEEE J. Quantum Electron. 24, 123-133 (1988).
[CrossRef]

1986 (1)

R. W. Tkach and A. R. Chraplyvy, "Regimes of Feedback Effects in 1.5-µm Distributed Feedback Lasers," IEEE J. Lightwave Technol. 4, 1655-1661 (1986).Q1
[CrossRef]

1985 (1)

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, "Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback," IEEE J. Quantum Electron. 21, 674-679 (1985).
[CrossRef]

1983 (1)

C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor of semiconductor lasers," Appl. Phys. Lett. 42, 328-330 (1983).
[CrossRef]

1981 (1)

A. Olsson and C. L. Tang, "Coherent optical interference effects in external cavity semiconductor lasers, " IEEE J. Quantum Electron. 17, 1320-1323 (1981).
[CrossRef]

1973 (1)

B. W. Hakki and T. L. Paoli, "CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain," J. Appl. Phys. 44, 4113-4119 (1973).
[CrossRef]

Accard, A.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Alferov, Zh. I.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
[CrossRef]

Azouigui, S.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Bimberg, D.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
[CrossRef]

Bossert, D. J.

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
[CrossRef]

Brenot, R.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Carroll, O.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, "Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers," Electron. Lett. 41, 911-912 (2005).
[CrossRef]

Chraplyvy, A. R.

R. W. Tkach and A. R. Chraplyvy, "Regimes of Feedback Effects in 1.5-µm Distributed Feedback Lasers," IEEE J. Lightwave Technol. 4, 1655-1661 (1986).Q1
[CrossRef]

Christiansen, P. L.

J. Mork, B. Tromborg, and P. L. Christiansen, "Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis," IEEE J. Quantum Electron. 24, 123-133 (1988).
[CrossRef]

Cong, D.-Y.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Corbett, B.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, "Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers," Electron. Lett. 41, 911-912 (2005).
[CrossRef]

Dagens, B.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

de Bruyn, B.

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, "Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback," Europhys. Lett. 40, 619-624 (1997).
[CrossRef]

Den Boef, A. J.

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, "Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback," IEEE J. Quantum Electron. 21, 674-679 (1985).
[CrossRef]

Derouin, E.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Drisse, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Duan, G-H.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Forchel, A.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum-dash lasers," IEEE Photon. Technol. 14, 735-737 (2002).
[CrossRef]

Fuchs, B.

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
[CrossRef]

Giudici, M.

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, "Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback," Europhys. Lett. 40, 619-624 (1997).
[CrossRef]

Gold, D.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum-dash lasers," IEEE Photon. Technol. 14, 735-737 (2002).
[CrossRef]

Gray, A. L.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

Grillot, F.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

Hakki, B. W.

B. W. Hakki and T. L. Paoli, "CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain," J. Appl. Phys. 44, 4113-4119 (1973).
[CrossRef]

Harder, C.

C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor of semiconductor lasers," Appl. Phys. Lett. 42, 328-330 (1983).
[CrossRef]

Hegarty, S. P.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, "Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers," Electron. Lett. 41, 911-912 (2005).
[CrossRef]

D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, "Sensitivity of quantum-dot semiconductor lasers to optical feedback," Opt. Lett. 29, 1072-1074 (2004).
[CrossRef] [PubMed]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, "Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback," Europhys. Lett. 40, 619-624 (1997).
[CrossRef]

Huyet, G.

O. Carroll, S. P. Hegarty, G. Huyet, and B. Corbett, "Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers," Electron. Lett. 41, 911-912 (2005).
[CrossRef]

D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, "Sensitivity of quantum-dot semiconductor lasers to optical feedback," Opt. Lett. 29, 1072-1074 (2004).
[CrossRef] [PubMed]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, "Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback," Europhys. Lett. 40, 619-624 (1997).
[CrossRef]

Kettler, T.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

Kirstaedter, N.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
[CrossRef]

Kop’ev, P. S.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
[CrossRef]

Kovsh, A. R.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

Laemmlin, M.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

Landreau, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Le Gouezigou, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Ledentsov, N. N.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
[CrossRef]

Lelarge, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Lenstra, D.

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, "Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback," IEEE J. Quantum Electron. 21, 674-679 (1985).
[CrossRef]

Lester, L. F.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
[CrossRef]

Li, H.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

J. Ye, H. Li, and J. G. McInerney, "Period-doubling route to chaos in a semiconductor laser with weak optical feedback," Phys. Rev. A 47, 2249-2252 (1993).
[CrossRef] [PubMed]

Make, D.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Malloy, K.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

Malloy, K. J.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
[CrossRef]

Martinez, A.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

McInerney, J. G.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

G. Huyet, S. P. Hegarty, M. Giudici, B. de Bruyn, and J. G. McInerney, "Statistical Properties of the Dynamics of Semiconductor Lasers with Optical Feedback," Europhys. Lett. 40, 619-624 (1997).
[CrossRef]

J. Ye, H. Li, and J. G. McInerney, "Period-doubling route to chaos in a semiconductor laser with weak optical feedback," Phys. Rev. A 47, 2249-2252 (1993).
[CrossRef] [PubMed]

Merghem, K.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Mikhrin, S. S.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

Moreau, G.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Mork, J.

J. Mork, B. Tromborg, and P. L. Christiansen, "Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis," IEEE J. Quantum Electron. 24, 123-133 (1988).
[CrossRef]

Newell, T. C.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
[CrossRef]

O’Brien, D.

D. O’Brien, S. P. Hegarty, G. Huyet, and A. V. Uskov, "Sensitivity of quantum-dot semiconductor lasers to optical feedback," Opt. Lett. 29, 1072-1074 (2004).
[CrossRef] [PubMed]

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

Olsson, A.

A. Olsson and C. L. Tang, "Coherent optical interference effects in external cavity semiconductor lasers, " IEEE J. Quantum Electron. 17, 1320-1323 (1981).
[CrossRef]

Paoli, T. L.

B. W. Hakki and T. L. Paoli, "CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain," J. Appl. Phys. 44, 4113-4119 (1973).
[CrossRef]

Patriarche, G.

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Poingt, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Pommereau, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Provost, J. G.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

Provost, J-G.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Ramdane, A.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Reithmaier, J. P.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum-dash lasers," IEEE Photon. Technol. 14, 735-737 (2002).
[CrossRef]

Renaudier, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Rousseau, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, "Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 µm," Appl. Phys. Lett. 89, 241123 (2006).
[CrossRef]

Schwertberger, R.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum-dash lasers," IEEE Photon. Technol. 14, 735-737 (2002).
[CrossRef]

Stintz, A.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. 11, 1527-1529 (1999).
[CrossRef]

Su, H.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

Tang, C. L.

A. Olsson and C. L. Tang, "Coherent optical interference effects in external cavity semiconductor lasers, " IEEE J. Quantum Electron. 17, 1320-1323 (1981).
[CrossRef]

Tkach, R. W.

R. W. Tkach and A. R. Chraplyvy, "Regimes of Feedback Effects in 1.5-µm Distributed Feedback Lasers," IEEE J. Lightwave Technol. 4, 1655-1661 (1986).Q1
[CrossRef]

Tromborg, B.

J. Mork, B. Tromborg, and P. L. Christiansen, "Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis," IEEE J. Quantum Electron. 24, 123-133 (1988).
[CrossRef]

Uskov, A. V.

Ustinov, V. M.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Top. Quantum Electron. 3, 196-205 (1997).
[CrossRef]

Vahala, K.

C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor of semiconductor lasers," Appl. Phys. Lett. 42, 328-330 (1983).
[CrossRef]

van Dijk, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G-H. Duan, "Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 ?m," IEEE J. Sel. Top. Quantum Electron. 13, 111-124 (2007).
[CrossRef]

Varangis, P. M.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

Verbeek, B. H.

D. Lenstra, B. H. Verbeek, and A. J. Den Boef, "Coherence Collapse in Single-Mode Semiconductor Lasers Due to Optical Feedback," IEEE J. Quantum Electron. 21, 674-679 (1985).
[CrossRef]

Wang, R.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

Wang, R. H.

R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. 13, 767-769 (2001).
[CrossRef]

Yariv, A.

C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor of semiconductor lasers," Appl. Phys. Lett. 42, 328-330 (1983).
[CrossRef]

Ye, J.

J. Ye, H. Li, and J. G. McInerney, "Period-doubling route to chaos in a semiconductor laser with weak optical feedback," Phys. Rev. A 47, 2249-2252 (1993).
[CrossRef] [PubMed]

Zhang, L.

H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. Malloy, and L. F. Lester, "High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers," IEEE Photon. Technol. Lett. 15, 1504-1506 (2003).
[CrossRef]

Zhukov, A. E.

D. O’Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
[CrossRef]

Zou, Q.

S. Azouigui, B. Dagens, F. Lelarge, J. G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, and A. Ramdane, "Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.51 µm," IEEE Photon. Technol. 19, 1181-1183 (2007).
[CrossRef]

Appl. Phys. Lett. (2)

C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor of semiconductor lasers," Appl. Phys. Lett. 42, 328-330 (1983).
[CrossRef]

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Figures (8)

Fig. 1.
Fig. 1.

Linewith enhancement factor (LEF) and damping factor versus current.

Fig. 2.
Fig. 2.

Experimental setup 1. The device under test was coupled using a lensed fibre to a 90/10 single-mode power splitter. The power meter was used to estimate the feedback level and the OSA was used to determine the onset of coherence collapse.

Fig. 3.
Fig. 3.

Experimental setup 2. The output from one facet of the device was focused by a high NA aspheric lens onto a broadband mirror. The output from the other facet was collimated through a free-space isolator and coupled to a single mode fibre isolator connected either to an OSA, an electrical spectrum analyser (ESA) or to a 6 GHz real-time oscilloscope. The OSA, ESA and oscilloscope were used to determine the onset of the CC and LFF regimes.

Fig. 4.
Fig. 4.

(a). Light-current characteristics. (b) Net gain versus current.

Fig. 5.
Fig. 5.

(a). Optical spectrum with increasing feedback. (b) RF spectrum with increasing feedback at 30 mA. (c) Time series in the CC regime.

Fig. 6.
Fig. 6.

Onset of coherence collapse (dB) versus emitted power determined at external cavity lengths of 0.3m, 0.9m, 1.5m (setup 2) and 18m (setup 1).

Fig. 7.
Fig. 7.

Time-series in the LFF regime at -1.2 dB feedback at 19 mA. The trace shown was obtained for an external cavity length of 0.5m.

Fig. 8.
Fig. 8.

RF spectrum in the LFF regime (at -1.2 dB feedback).

Equations (5)

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γ = P 1 P o
r eff = r + ( 1 r 2 ) r ext T ξ 1 + r r ext T
γ = r ext 2 T 2 ξ 2
r eff = 1 r e g L
Γ crit = γ crit ( 2 C )

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