Abstract

We report on evanescently coupled Ge waveguide photodetectors that are grown on top of Si rib waveguides. A Ge waveguide detector with a width of 7.4μm and length of 50 μm demonstrated an optical bandwidth of 31.3 GHz at -2V for 1550nm. In addition, a responsivity of 0.89 A/W at 1550 nm and dark current of 169 nA were measured from this detector at -2V. A higher responsivity of 1.16 A/W was also measured from a longer Ge waveguide detector (4.4 × 100 μm2), with a corresponding bandwidth of 29.4 GHz at -2V. An open eye diagram at 40 Gb/s is also shown.

© 2007 Optical Society of America

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  1. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15, 660–668 (2007)
    [Crossref] [PubMed]
  2. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
    [Crossref] [PubMed]
  3. H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
    [Crossref] [PubMed]
  4. A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
    [Crossref]
  5. G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
    [Crossref]
  6. M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006).
    [Crossref]
  7. D. Ahn, C. Hong, J. Liu, W. Giziewicz, M. Beals, L.C. Kimerling, and J. Michel, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15, 3916–3921 (2007).
    [Crossref] [PubMed]
  8. L. Vivien, M. Rouviere, J. Fedeli, D. Marris-Morini, J. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15, 9843–9848 (2007).
    [Crossref] [PubMed]
  9. C. Gunn, G. Masini, J. Witzens, and G. Capellini, “CMOS Photonics Using Germanium Photodetectors,” SiGe and Ge: Materials, Processing and Devices, ECS Transcations 3, 17–24 (2006).
  10. H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
    [Crossref]
  11. G. Reed and A. Knights, Silicon Photonics, (Wiley, 93–97, 2004).
  12. I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).
  13. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

2007 (3)

2006 (3)

C. Gunn, G. Masini, J. Witzens, and G. Capellini, “CMOS Photonics Using Germanium Photodetectors,” SiGe and Ge: Materials, Processing and Devices, ECS Transcations 3, 17–24 (2006).

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006).
[Crossref]

2005 (3)

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

2004 (1)

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

2003 (1)

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

2001 (1)

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Ahn, D.

Asghari, M.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Assanto, G.

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Beals, M.

Bower, J.

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

Cannon, D. D.

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

Capellini, G.

C. Gunn, G. Masini, J. Witzens, and G. Capellini, “CMOS Photonics Using Germanium Photodetectors,” SiGe and Ge: Materials, Processing and Devices, ECS Transcations 3, 17–24 (2006).

Cassan, E.

Chetrit, Y.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15, 660–668 (2007)
[Crossref] [PubMed]

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006).
[Crossref]

Chu, J. O.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

Ciftcioglu, B.

Cohen, O.

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

Cohen, Oded

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Colace, L.

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Crozat, P.

Damlencourt, J.

Danielson, D.

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

Day, I.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Day, S.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Dehlinger, G.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

Dosunmu, O.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006).
[Crossref]

El Melhaoui, L.

Evans, I.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Fang, A.

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

Fang, Alexander

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Fedeli, J.

Giziewicz, W.

Grill, A.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

Gunn, C.

C. Gunn, G. Masini, J. Witzens, and G. Capellini, “CMOS Photonics Using Germanium Photodetectors,” SiGe and Ge: Materials, Processing and Devices, ECS Transcations 3, 17–24 (2006).

Hak, Dani

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Hong, C.

Hopper, F.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Ishikawa, Y.

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

Izhaky, N.

Johnston, J.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Jones, R.

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

Jones, Richard

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Jongthammanurak, S.

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

Kimerling, L. C.

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Kimerling, L.C.

Knigha, A.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Knights, A.

G. Reed and A. Knights, Silicon Photonics, (Wiley, 93–97, 2004).

Koester, S. J.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

Laval, S.

Le Roux, X.

Liao, L.

Lipson, M.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Liu, A.

Liu, Ansheng

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Liu, J.

D. Ahn, C. Hong, J. Liu, W. Giziewicz, M. Beals, L.C. Kimerling, and J. Michel, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15, 3916–3921 (2007).
[Crossref] [PubMed]

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

Luan, H.

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Luff, I.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Mangeney, J.

Marris-Morini, D.

Masini, G.

C. Gunn, G. Masini, J. Witzens, and G. Capellini, “CMOS Photonics Using Germanium Photodetectors,” SiGe and Ge: Materials, Processing and Devices, ECS Transcations 3, 17–24 (2006).

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Michel, J.

D. Ahn, C. Hong, J. Liu, W. Giziewicz, M. Beals, L.C. Kimerling, and J. Michel, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15, 3916–3921 (2007).
[Crossref] [PubMed]

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

Morse, M.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006).
[Crossref]

Nguyen, H.

Ouyang, Q. C.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

Paniccia, M,

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

Paniccia, M.

Paniccia, Mario

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Park, H.

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

Pascal, D.

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Reed, G.

G. Reed and A. Knights, Silicon Photonics, (Wiley, 93–97, 2004).

Roberts, S.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Rong, H.

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Rouviere, M.

Rubin, D.

Sarid, G.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006).
[Crossref]

Schaub, J. D.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

Schmidt, B.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Tsang, H.

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

Vivien, L.

Wada, K.

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Witzens, J.

C. Gunn, G. Masini, J. Witzens, and G. Capellini, “CMOS Photonics Using Germanium Photodetectors,” SiGe and Ge: Materials, Processing and Devices, ECS Transcations 3, 17–24 (2006).

Xu, Q.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Appl. Phys. Lett. (1)

J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110-1-3 (2005)

IEEE Photon. Technol. Lett. (2)

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-Speed Germanium-on-SOI Lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16, 2547–2549 (2004).
[Crossref]

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006).
[Crossref]

Nature (2)

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

H. Rong, Richard Jones, Ansheng Liu, Oded Cohen, Dani Hak, Alexander Fang, and Mario Paniccia, “A continuous-wave Raman silicon laser,” Nature 433, 725–728 (2005).
[Crossref] [PubMed]

Opt. Express (3)

Opt. Express, (1)

A. Fang, H. Park, O. Cohen, R. Jones, M, Paniccia, and J. Bower, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express, 14, 9203–9210 (2006).
[Crossref]

Opt. Mater. (1)

H. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater. 17, 71–73 (2001).
[Crossref]

Optical Fiber Communications Conference, (1)

I. Day, I. Evans, A. Knigha, F. Hopper, S. Roberts, J. Johnston, S. Day, I. Luff, H. Tsang, and M. Asghari, “Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-speed Electronic Variable Optical Attenuators,” Optical Fiber Communications Conference, 1, 249–251 (2003).

SiGe and Ge: Materials, Processing and Devices, ECS Transcations (1)

C. Gunn, G. Masini, J. Witzens, and G. Capellini, “CMOS Photonics Using Germanium Photodetectors,” SiGe and Ge: Materials, Processing and Devices, ECS Transcations 3, 17–24 (2006).

Other (1)

G. Reed and A. Knights, Silicon Photonics, (Wiley, 93–97, 2004).

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Figures (4)

Fig. 1.
Fig. 1.

(a). Schematic layout for the Ge detector integrated with a passive waveguide. (b) Cross-section schematic of the Ge n-i-p waveguide photodetector. (c) Cross-section SEM image of the Ge waveguide photodetector (7.4μm × 50μm) after processing.

Fig. 2.
Fig. 2.

(a). Measured dark current and photocurrent with input optical power of 126μW at 1550nm for detector 7.4μm × 50μm and 4.4μm × 100μm. (b) Responsivity versus wavelength for detector 7.4μm × 50μm, and detector 4.4μm × 100μm, respectively, at -2V.

Fig. 3.
Fig. 3.

Measured frequency response for detector 4.4μm × 100μm and 7.4μm × 50μm at -2V, and the inset shows optical bandwidth versus supply voltage for both detectors.

Fig. 4.
Fig. 4.

Measured eye diagram at 40Gb/s for detector 7.4μm × 50μm at -5V.

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