Abstract

Optical properties of a lattice matched GaAs/In0.5(AlxGa1-x)0.5P/GaAs heterostructure cavity have been characterized using piezoreflectance (PzR) measurements in the temperature range between 20 and 300 K. The measurements were carried out in the energy range of 1.3-6 eV. The PzR spectra of In0.5(AlxGa1-x)0.5P at 20 and 300K clearly show a lot of interband transition features present at energies above the band edge. There is also a feature of interference-fringes oscillations observed in each PzR spectrum below band gap E0 of In0.5(AlxGa1-x)0.5P. The oscillation period in between the PzR interference fringes can be utilized to determine the index of refraction (n) for the In0.5(AlxGa1-x)0.5P at different temperatures. The Al composition x of In0.5(AlxGa1-x)0.5P can be estimated from the evaluation value of E0 by PzR. The obtained Al composition of x=0.691 is in good agreements with the original design for growing the quaternary compound. Electronic band structure of In0.5(Al0.7Ga0.3)0.5P is determined by the interband transitions from PzR. The temperature variations of the transition energies and index of refraction n for the In0.5(AlxGa1-x)0.5P are analyzed discussed. The PzR is proven to be very sensitive in determining the optical parameters in III-V GaAs/InAlGaP/GaAs Fabry-Perot system.

© 2007 Optical Society of America

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  1. D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
    [CrossRef]
  2. S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, "Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys," J. Appl. Phys. 79, 439-445 (1996).
    [CrossRef]
  3. C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
    [CrossRef]
  4. Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
    [CrossRef]
  5. C. H. Ho, "Optical study of the structural change in ReS2 single crystals using polarized thermoreflectance spectroscopy," Opt. Express 13, 8-19 (2005).
    [CrossRef] [PubMed]
  6. C. H. Ho, K. W. Huang, Y. S. Lin, and D. Y. Lin, "Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices," Opt. Express 13, 3951-3960 (2005).
    [CrossRef] [PubMed]
  7. F. H. Pollak and H. Shen, "Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices," Mater. Sci. Eng. R10,275-374 (1993).
  8. D. E. Aspnes, in Handbook on Semiconductors, edited by M. Balkanski, (North Holland, Amsterdam, 1980).
  9. C. H. Ho, J. H. Li and Y. S. Lin, "Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 epitaxy on InP," Appl. Phys. Lett. 89, 191906 (2006).
    [CrossRef]
  10. W. M. Yim and R. J. Paff, "Thermal expansion of AlN, sapphire, and silicon," J. Appl. Phys. 45, 1456-1457 (1974).
    [CrossRef]
  11. O. Madelung, Semiconductors-Basic Data, 2nd rev ed., Springer, (BerlinHeidleberg New York, 1996).
    [CrossRef]
  12. Y. P. Varshni, "Temperature dependence of the energy gap in semiconductors," Physica 34, 149-154 (1967).
    [CrossRef]
  13. M. B. Panish and H. C. Casey, Jr, "Temperature dependence of the energy gap in GaAs and GaP," J. Appl. Phys. 40, 163-167 (1969).
    [CrossRef]
  14. K. Sato, Y. Ishikawa and K. Sugawara, "Infrared interference spectra observed in silicon epitaxial wafer," Solid-State Electronics 9, 771-781 (1966).
    [CrossRef]

2006 (2)

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

C. H. Ho, J. H. Li and Y. S. Lin, "Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 epitaxy on InP," Appl. Phys. Lett. 89, 191906 (2006).
[CrossRef]

2005 (2)

1996 (1)

S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, "Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys," J. Appl. Phys. 79, 439-445 (1996).
[CrossRef]

1994 (1)

D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
[CrossRef]

1993 (1)

F. H. Pollak and H. Shen, "Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices," Mater. Sci. Eng. R10,275-374 (1993).

1990 (1)

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

1974 (1)

W. M. Yim and R. J. Paff, "Thermal expansion of AlN, sapphire, and silicon," J. Appl. Phys. 45, 1456-1457 (1974).
[CrossRef]

1969 (1)

M. B. Panish and H. C. Casey, Jr, "Temperature dependence of the energy gap in GaAs and GaP," J. Appl. Phys. 40, 163-167 (1969).
[CrossRef]

1967 (1)

Y. P. Varshni, "Temperature dependence of the energy gap in semiconductors," Physica 34, 149-154 (1967).
[CrossRef]

1966 (1)

K. Sato, Y. Ishikawa and K. Sugawara, "Infrared interference spectra observed in silicon epitaxial wafer," Solid-State Electronics 9, 771-781 (1966).
[CrossRef]

Adachi, S.

S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, "Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys," J. Appl. Phys. 79, 439-445 (1996).
[CrossRef]

Casey, H. C.

M. B. Panish and H. C. Casey, Jr, "Temperature dependence of the energy gap in GaAs and GaP," J. Appl. Phys. 40, 163-167 (1969).
[CrossRef]

Craford, M. G.

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

David, J. P. R.

D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
[CrossRef]

Fietcher, R. M.

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

Ho, C. H.

Hopkinson, M.

D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
[CrossRef]

Hsu, R. T.

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

Hsu, W. C.

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

Huang, D. H.

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

Huang, K. W.

Ishikawa, Y.

K. Sato, Y. Ishikawa and K. Sugawara, "Infrared interference spectra observed in silicon epitaxial wafer," Solid-State Electronics 9, 771-781 (1966).
[CrossRef]

Kowalski, O. P.

D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
[CrossRef]

Kuo, C. P.

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

Lardizabal, M. C.

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

Li, J. H.

C. H. Ho, J. H. Li and Y. S. Lin, "Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 epitaxy on InP," Appl. Phys. Lett. 89, 191906 (2006).
[CrossRef]

Lin, D. Y.

Lin, Y. S.

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

C. H. Ho, J. H. Li and Y. S. Lin, "Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 epitaxy on InP," Appl. Phys. Lett. 89, 191906 (2006).
[CrossRef]

C. H. Ho, K. W. Huang, Y. S. Lin, and D. Y. Lin, "Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices," Opt. Express 13, 3951-3960 (2005).
[CrossRef] [PubMed]

Mowbray, D. J.

D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
[CrossRef]

Ohtsuka, K.

S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, "Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys," J. Appl. Phys. 79, 439-445 (1996).
[CrossRef]

Osentowski, T. D.

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

Ozaki, S.

S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, "Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys," J. Appl. Phys. 79, 439-445 (1996).
[CrossRef]

Paff, R. J.

W. M. Yim and R. J. Paff, "Thermal expansion of AlN, sapphire, and silicon," J. Appl. Phys. 45, 1456-1457 (1974).
[CrossRef]

Panish, M. B.

M. B. Panish and H. C. Casey, Jr, "Temperature dependence of the energy gap in GaAs and GaP," J. Appl. Phys. 40, 163-167 (1969).
[CrossRef]

Pollak, F. H.

F. H. Pollak and H. Shen, "Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices," Mater. Sci. Eng. R10,275-374 (1993).

Robbins, V. M.

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

Sato, K.

K. Sato, Y. Ishikawa and K. Sugawara, "Infrared interference spectra observed in silicon epitaxial wafer," Solid-State Electronics 9, 771-781 (1966).
[CrossRef]

Sato, M.

S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, "Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys," J. Appl. Phys. 79, 439-445 (1996).
[CrossRef]

Shen, H.

F. H. Pollak and H. Shen, "Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices," Mater. Sci. Eng. R10,275-374 (1993).

Skolnick, M. S.

D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
[CrossRef]

Sugawara, K.

K. Sato, Y. Ishikawa and K. Sugawara, "Infrared interference spectra observed in silicon epitaxial wafer," Solid-State Electronics 9, 771-781 (1966).
[CrossRef]

Varshni, Y. P.

Y. P. Varshni, "Temperature dependence of the energy gap in semiconductors," Physica 34, 149-154 (1967).
[CrossRef]

Wang, T. B.

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

Wu, Y. H.

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

Yim, W. M.

W. M. Yim and R. J. Paff, "Thermal expansion of AlN, sapphire, and silicon," J. Appl. Phys. 45, 1456-1457 (1974).
[CrossRef]

Appl. Phys. Lett. (3)

C. P. Kuo, R. M. Fietcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[CrossRef]

D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994).
[CrossRef]

C. H. Ho, J. H. Li and Y. S. Lin, "Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 epitaxy on InP," Appl. Phys. Lett. 89, 191906 (2006).
[CrossRef]

Electrochemical and Solid-State Lett. (1)

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, "n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors," Electrochemical and Solid-State Lett. 9, G37-G39 (2006).
[CrossRef]

J. Appl. Phys. (3)

S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, "Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys," J. Appl. Phys. 79, 439-445 (1996).
[CrossRef]

W. M. Yim and R. J. Paff, "Thermal expansion of AlN, sapphire, and silicon," J. Appl. Phys. 45, 1456-1457 (1974).
[CrossRef]

M. B. Panish and H. C. Casey, Jr, "Temperature dependence of the energy gap in GaAs and GaP," J. Appl. Phys. 40, 163-167 (1969).
[CrossRef]

Mater. Sci. Eng. (1)

F. H. Pollak and H. Shen, "Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices," Mater. Sci. Eng. R10,275-374 (1993).

Opt. Express (2)

Physica (1)

Y. P. Varshni, "Temperature dependence of the energy gap in semiconductors," Physica 34, 149-154 (1967).
[CrossRef]

Solid-State Electronics (1)

K. Sato, Y. Ishikawa and K. Sugawara, "Infrared interference spectra observed in silicon epitaxial wafer," Solid-State Electronics 9, 771-781 (1966).
[CrossRef]

Other (2)

O. Madelung, Semiconductors-Basic Data, 2nd rev ed., Springer, (BerlinHeidleberg New York, 1996).
[CrossRef]

D. E. Aspnes, in Handbook on Semiconductors, edited by M. Balkanski, (North Holland, Amsterdam, 1980).

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Figures (5)

Fig. 1.
Fig. 1.

The representative scheme of the lattice-matched heterostructure system of GaAs/In0.5(AlxGa1-x)0.5P/GaAs. The lights’ resonant effect inside the cavity is shown.

Fig. 2.
Fig. 2.

Experimental PzR spectra of the GaAs/In0.5(AlxGa1-x)0.5P/GaAs system at 20 and 300 K.

Fig. 3.
Fig. 3.

Temperature dependent PzR spectra of GaAs/InAlGaP/GaAs (E < 2.7 eV) between 20 and 300 K.

Fig. 4.
Fig. 4.

Temperature dependence of transition energies of E0 and E0+∆0 for In0.5(Al0.7Ga0.3)0.5P.

Fig. 5.
Fig. 5.

Temperature dependence of the below-band-edge refractive index n for the In0.5(Al0.7Ga0.3)0.5P.

Tables (1)

Tables Icon

Table 1. Energies of critical-point transitions of a GaAs/In0.5(Al0.7Ga0.3)0.5P/GaAs system obtained by PzR measurements. The values for a quaternary compound system of In0.34Al0.66As0.85Sb0.15 epitaxy on InP are also included for comparison [9].

Equations (4)

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ΔR R = Re [ i = 1 n A i ex e j ϕ i ex ( E E i ex + j Γ i ex ) 2 ]
α = ( 1 ΔT ) ( Δ a a )
E i ( T ) = E i ( 0 ) α i T 2 ( β i + T )
Δ ν = 1 ( 2 n d cos ϕ )

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