Abstract

In order to get a small-sized pit, the reaction threshold of a photoresist is enhanced by increasing the prebake temperature and time. With the improved photoresist, a pit size corresponding to or even smaller than the minimum pit on a blue laser disc can be obtained on an industrial DVD product line. The improved photoresist may serve as the master material of future multilevel blue laser discs, which might provide a potential solution for the fabrication of multilevel blue laser discs.

© 2007 Optical Society of America

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References

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  1. H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
    [CrossRef]
  2. H. Yuan, D. Xu, Q. Zhang, and J. Song, "Dynamic model of mastering for multilevel run-length limited read-only disc," Opt. Express 15, 4176-4181 (2007).
    [CrossRef] [PubMed]
  3. J. Song, Y. Ni, D. Xu, L. Pan, Q. Zhang, and H. Hu, "Modeling and realization of a multilevel read-only disc," Opt. Express 14, 1199-1207 (2006).
    [CrossRef] [PubMed]
  4. Q. Zhang, Y. Ni, D. Xu, H. Hu, J. Song, and H. Hu, "Multilevel run-length limited recording on read-only disc," Jpn. J. Appl. Phys. 45, 4097-4101 (2006).
    [CrossRef]
  5. F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of positive photoresist," IEEE Trans. Electron. Devices 22, 445-452 (1975).
    [CrossRef]
  6. P. L. M. Put, H. P. Urbach, R. D. Morton, and J. J. Rusch, "Resolution limit of optical disc mastering," Jpn. J. Appl. Phys. 36, 539-548 (1997).
    [CrossRef]
  7. Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
    [CrossRef]

2007

2006

J. Song, Y. Ni, D. Xu, L. Pan, Q. Zhang, and H. Hu, "Modeling and realization of a multilevel read-only disc," Opt. Express 14, 1199-1207 (2006).
[CrossRef] [PubMed]

Q. Zhang, Y. Ni, D. Xu, H. Hu, J. Song, and H. Hu, "Multilevel run-length limited recording on read-only disc," Jpn. J. Appl. Phys. 45, 4097-4101 (2006).
[CrossRef]

2003

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

1997

P. L. M. Put, H. P. Urbach, R. D. Morton, and J. J. Rusch, "Resolution limit of optical disc mastering," Jpn. J. Appl. Phys. 36, 539-548 (1997).
[CrossRef]

1987

Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
[CrossRef]

1975

F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of positive photoresist," IEEE Trans. Electron. Devices 22, 445-452 (1975).
[CrossRef]

Dill, F. H.

F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of positive photoresist," IEEE Trans. Electron. Devices 22, 445-452 (1975).
[CrossRef]

Endo, M.

Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
[CrossRef]

Hauge, P. S.

F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of positive photoresist," IEEE Trans. Electron. Devices 22, 445-452 (1975).
[CrossRef]

Hieslmair, H.

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

Hirai, Y.

Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
[CrossRef]

Hornberger, W. P.

F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of positive photoresist," IEEE Trans. Electron. Devices 22, 445-452 (1975).
[CrossRef]

Hu, H.

Q. Zhang, Y. Ni, D. Xu, H. Hu, J. Song, and H. Hu, "Multilevel run-length limited recording on read-only disc," Jpn. J. Appl. Phys. 45, 4097-4101 (2006).
[CrossRef]

Q. Zhang, Y. Ni, D. Xu, H. Hu, J. Song, and H. Hu, "Multilevel run-length limited recording on read-only disc," Jpn. J. Appl. Phys. 45, 4097-4101 (2006).
[CrossRef]

J. Song, Y. Ni, D. Xu, L. Pan, Q. Zhang, and H. Hu, "Modeling and realization of a multilevel read-only disc," Opt. Express 14, 1199-1207 (2006).
[CrossRef] [PubMed]

Kuijper, M.

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

Langereis, G.

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

Mano, Y.

Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
[CrossRef]

Morton, R. D.

P. L. M. Put, H. P. Urbach, R. D. Morton, and J. J. Rusch, "Resolution limit of optical disc mastering," Jpn. J. Appl. Phys. 36, 539-548 (1997).
[CrossRef]

Ni, Y.

Q. Zhang, Y. Ni, D. Xu, H. Hu, J. Song, and H. Hu, "Multilevel run-length limited recording on read-only disc," Jpn. J. Appl. Phys. 45, 4097-4101 (2006).
[CrossRef]

J. Song, Y. Ni, D. Xu, L. Pan, Q. Zhang, and H. Hu, "Modeling and realization of a multilevel read-only disc," Opt. Express 14, 1199-1207 (2006).
[CrossRef] [PubMed]

O’Neill, M.

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

Pan, L.

Put, P. L. M.

P. L. M. Put, H. P. Urbach, R. D. Morton, and J. J. Rusch, "Resolution limit of optical disc mastering," Jpn. J. Appl. Phys. 36, 539-548 (1997).
[CrossRef]

Rusch, J. J.

P. L. M. Put, H. P. Urbach, R. D. Morton, and J. J. Rusch, "Resolution limit of optical disc mastering," Jpn. J. Appl. Phys. 36, 539-548 (1997).
[CrossRef]

Sasago, M.

Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
[CrossRef]

Shaw, J. M.

F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of positive photoresist," IEEE Trans. Electron. Devices 22, 445-452 (1975).
[CrossRef]

Song, J.

Stinebaugh, J.

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

Tsuji, D.

Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
[CrossRef]

Urbach, H. P.

P. L. M. Put, H. P. Urbach, R. D. Morton, and J. J. Rusch, "Resolution limit of optical disc mastering," Jpn. J. Appl. Phys. 36, 539-548 (1997).
[CrossRef]

Wong, T.

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

Xu, D.

Yuan, H.

Zhang, Q.

Aided Des.

Y. Hirai, M. Sasago, M. Endo, D. Tsuji, and Y. Mano, "Process modeling for photoresist development and design of dlr/sd (double-layer resist by a single development) process," IEEE Trans. Comput.-Aided Des. 6, 403-409 (1987).
[CrossRef]

IEEE Trans. Electron. Devices

F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of positive photoresist," IEEE Trans. Electron. Devices 22, 445-452 (1975).
[CrossRef]

Jpn. J. Appl. Phys.

P. L. M. Put, H. P. Urbach, R. D. Morton, and J. J. Rusch, "Resolution limit of optical disc mastering," Jpn. J. Appl. Phys. 36, 539-548 (1997).
[CrossRef]

H. Hieslmair, J. Stinebaugh, T. Wong, M. O’Neill, M. Kuijper, and G. Langereis, "34 GB multilevel-enabled rewritable system using blue laser and high-numeric aperture optics," Jpn. J. Appl. Phys. 42, 1074-1075 (2003).
[CrossRef]

Q. Zhang, Y. Ni, D. Xu, H. Hu, J. Song, and H. Hu, "Multilevel run-length limited recording on read-only disc," Jpn. J. Appl. Phys. 45, 4097-4101 (2006).
[CrossRef]

Opt. Express

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Figures (6)

Fig. 1.
Fig. 1.

(a) 3D view of normalized light intensity [2]. (b) Sketch map of normalized light intensity and threshold a. The x-axis is on the focal plane with units of nm; the y-axis is the normalized light intensity (1 stands for maximum intensity).

Fig. 2.
Fig. 2.

Pit depth (width) vs. normalized power.

Fig. 3.
Fig. 3.

Relation of pit width (depth) vs. threshold a.

Fig. 4(a).
Fig. 4(a).

Relation between pit width and normalized power.

Fig. 4(b).
Fig. 4(b).

Relation between pit depth and normalized power

Fig 5.
Fig 5.

(a). AFM picture of DVD. (b). AFM picture of improved photoresist disc (normalized power I=0.6, prebaking in 130°C for 240s). (c). Vertical section of Fig. 5(a) with depth of 125 nm. (d). Vertical section of Fig. 5(b) with depth of about 23 nm.

Tables (4)

Tables Icon

Table 1. Size of standard DVD disc pits

Tables Icon

Table 2. Simulation parameters

Tables Icon

Table 3. Key parameters during the mastering process

Tables Icon

Table 4. Prebaking temperatures and times

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

h x y = R 0 ( 1 e CE x y ) q T ,
E ( x , y , z ) = 0 t I ( x , y , z , τ ) ,
I ' = { I a ( I > a ) 0 ( I a ) .

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