Abstract

We report the first 1310 nm hybrid laser on a silicon substrate. This laser operates continuous wave (C.W.) up to 105 °C. The room temperature threshold current of this laser is 30 mA, and the maximum single sided fiber-coupled output power is 5.5 mW.

© 2007 Optical Society of America

PDF Article

References

  • View by:
  • |
  • |

  1. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. W. Fang, and M. Paniccia, "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
    [CrossRef]
  2. O. Boyraz and B. Jalali, "Demonstration of a silicon Raman laser," Opt. Express 12, 5269-5273 (2004).
    [CrossRef]
  3. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express  14, 9203-9210 (2006).
    [CrossRef]
  4. G. Roelkens, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit,"Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit," Opt. Express 14, 8154-8159 (2006)
    [CrossRef]
  5. P. Rojo Romeo, J. Van Campenhout, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, D. Van Thourhout, R. Baets, J. M. Fedeli, and L. Di Cioccio,"Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs," Opt. Express 14, 3864-3871 (2006)
    [CrossRef]
  6. R. Sawada, H. Nakada, and F. Ohira,"Highly accurate and quick bonding for planar lightwave circuit and laser-diode chip," in Proceedings of IEEE IEMT/IMC (IEEE, 1998), 133-137.
  7. R. Boudreau, P. Zhou, and T. Bowen,"Wafer scale photonic-die attachment," IEEE Transactions on Components, Packaging and Manufacturing Technology, Part B 21, 136-139 (1998).
  8. A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers,"Integrated AlGaInAs-silicon evanescent race track laser and photodetector," Opt. Express 15, 2315-2322 (2007).
    [CrossRef]
  9. D. Pasquariello, and K. Hjort,"Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding," IEEE J. Sel. Top. Quantum Electron. 8, 118-131 (2002).
  10. Y.-A.  Chang, T.-S. Ko, J.-R. Chen, F.-I Lai, C.-L. Yu, I-T. Wu, H.-C. Kuo, Y.-K. Kuo, L.-W. Laih, L.-H. Laih, T.-C. Lu, and S.-C. Wang," The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers," Semicond. Sci. Technol. 21, 1488-1494 (2006)
    [CrossRef]
  11. Fimmwave, Photon Design, http://www.photond.com>
  12. H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "A Hybrid AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007)
    [CrossRef]

2007

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "A Hybrid AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007)
[CrossRef]

A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers,"Integrated AlGaInAs-silicon evanescent race track laser and photodetector," Opt. Express 15, 2315-2322 (2007).
[CrossRef]

2006

2005

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. W. Fang, and M. Paniccia, "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
[CrossRef]

2004

2002

D. Pasquariello, and K. Hjort,"Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding," IEEE J. Sel. Top. Quantum Electron. 8, 118-131 (2002).

IEEE J. Sel. Top. Quantum Electron.

D. Pasquariello, and K. Hjort,"Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding," IEEE J. Sel. Top. Quantum Electron. 8, 118-131 (2002).

IEEE Photon. Technol. Lett.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "A Hybrid AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007)
[CrossRef]

Nature

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. W. Fang, and M. Paniccia, "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
[CrossRef]

Opt. Express

Semicond. Sci. Technol.

Y.-A.  Chang, T.-S. Ko, J.-R. Chen, F.-I Lai, C.-L. Yu, I-T. Wu, H.-C. Kuo, Y.-K. Kuo, L.-W. Laih, L.-H. Laih, T.-C. Lu, and S.-C. Wang," The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers," Semicond. Sci. Technol. 21, 1488-1494 (2006)
[CrossRef]

Other

Fimmwave, Photon Design, http://www.photond.com>

R. Sawada, H. Nakada, and F. Ohira,"Highly accurate and quick bonding for planar lightwave circuit and laser-diode chip," in Proceedings of IEEE IEMT/IMC (IEEE, 1998), 133-137.

R. Boudreau, P. Zhou, and T. Bowen,"Wafer scale photonic-die attachment," IEEE Transactions on Components, Packaging and Manufacturing Technology, Part B 21, 136-139 (1998).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Metrics