Abstract

A polarization-enhancing reflector design, which is matched to the emission characteristics of GaInN/GaN 460 nm light-emitting diodes grown on (0001) oriented sapphire substrates, is reported. Side-emitted light from these devices is known to be highly polarized with the electric field in the plane of the active region. Through selective rotation of polarization by the reflector, the in-plane polarized side-emitted light is directed upwards with a single dominant linear polarization. Polarization ratios as high as 3.5:1 are measured in the farfield, and the average polarization ratio is 1.9:1. If only light that strikes the reflector is considered, the polarization ratio is 2.5:1. The concept of the polarization-enhancing reflector and the numerical algorithm used to generate the optimized shape are also described.

© 2007 Optical Society of America

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    [CrossRef]

2007

M. F. Schubert, S. Chhajed, J. K. Kim, and E. F. Schubert, "Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates," Appl. Phys. Lett. 91, 051117 (2007).
[CrossRef]

M. F. Schubert, A. Noemaun, S. Chhajed, J. K. Kim, E. F. Schubert and C. Sone, "Encapsulation shape with non-rotational symmetry designed for extraction of polarized light from unpolarized sources," Opt. Express 15, 10452-10457 (2007).
[CrossRef]

2006

H. Masui, T. J. Baker, M. Iza, H. Zhong, S. Nakamura, and S. P. DenBaars, "Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (1122)-plane GaN," J. Appl. Phys. 100, 113109 (2006).
[CrossRef]

T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates," Appl. Phys. Lett. 89, 091906 (2006).
[CrossRef]

S.-S. Lin, K. M. Yemelyanov, E. N. Pugh. Jr., and N. Engheta, "Separation and contrast enhancement of overlapping cast shadow components using polarization," Opt. Express 14, 7099-7108 (2006).
[CrossRef]

J. Kling, "Moving diognostics from the bench to the bedside," Nat. Biotechnol. 24, 891-893 (2006).
[CrossRef]

2005

E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science 308, 1274-1278 (2005).
[CrossRef]

J. Shakya, K. Knabe, K. H. kim, J. Li, J. Y. Lin, and H. X. Jiang, "Polarization of III-nitride blue and ultraviolet light-emitting diodes," Appl. Phys. Lett. 86, 091107 (2005).
[CrossRef]

H. Masui, A. A. Chakrabory, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate," Jpn. J. Appl. Phys. 44, L1329-L1332 (2005).
[CrossRef]

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, "Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes," Appl. Phys. Lett. 86, 111101 (2005).
[CrossRef]

2004

2002

H. B. J. Jagt, H. J. Cornelissen, D. J. Broer, and C. W. M. Bastiaansen, "Linearly polarized light-emitting backlight," J. Soc. Inf. Disp. 10, 107-112 (2002).
[CrossRef]

S. M. P. Blom, H. P. M. Huck, H. J. Cornelissen, and H. Greiner, "Towards a polarized light-emitting backlight: micro-structured anisotropic layers," J. Soc. Inf. Disp. 10, 209-213 (2002).
[CrossRef]

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," J. Sel. Top. Quantum Electron. 8, 310-320 (2002).

S. Mutu, F. J. P. Schuurmans, and M. D. Pashley, "Red, green and blue LEDs for white light illumination," J. Sel. Top. Quantum Electron. 8, 333-338 (2002).

G. Harbers, W. Timmers, and W. Sillevis-Smitt, "LED backlighting for LCD HDTV," J. Soc. Inf. Disp. 10, 347-350 (2002).
[CrossRef]

2001

A. Ivanisevic, J.-Y. Yeh, L. Mawst, T. F. Kuech, and A. B. Ellis, "Semiconductor devices: Light emitting diodes as chemical sensors," Nature 409, 476 (2001).
[CrossRef]

1996

R. Oldenbourg, "A new view on polarization microscopy," Nature 381, 811-812 (1996).
[CrossRef]

Appl. Opt.

Appl. Phys. Lett.

T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates," Appl. Phys. Lett. 89, 091906 (2006).
[CrossRef]

M. F. Schubert, S. Chhajed, J. K. Kim, and E. F. Schubert, "Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates," Appl. Phys. Lett. 91, 051117 (2007).
[CrossRef]

J. Shakya, K. Knabe, K. H. kim, J. Li, J. Y. Lin, and H. X. Jiang, "Polarization of III-nitride blue and ultraviolet light-emitting diodes," Appl. Phys. Lett. 86, 091107 (2005).
[CrossRef]

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, "Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes," Appl. Phys. Lett. 86, 111101 (2005).
[CrossRef]

J. Appl. Phys.

H. Masui, T. J. Baker, M. Iza, H. Zhong, S. Nakamura, and S. P. DenBaars, "Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (1122)-plane GaN," J. Appl. Phys. 100, 113109 (2006).
[CrossRef]

J. Sel. Top. Quantum Electron.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," J. Sel. Top. Quantum Electron. 8, 310-320 (2002).

S. Mutu, F. J. P. Schuurmans, and M. D. Pashley, "Red, green and blue LEDs for white light illumination," J. Sel. Top. Quantum Electron. 8, 333-338 (2002).

J. Soc. Inf. Disp.

G. Harbers, W. Timmers, and W. Sillevis-Smitt, "LED backlighting for LCD HDTV," J. Soc. Inf. Disp. 10, 347-350 (2002).
[CrossRef]

H. B. J. Jagt, H. J. Cornelissen, D. J. Broer, and C. W. M. Bastiaansen, "Linearly polarized light-emitting backlight," J. Soc. Inf. Disp. 10, 107-112 (2002).
[CrossRef]

S. M. P. Blom, H. P. M. Huck, H. J. Cornelissen, and H. Greiner, "Towards a polarized light-emitting backlight: micro-structured anisotropic layers," J. Soc. Inf. Disp. 10, 209-213 (2002).
[CrossRef]

Jpn. J. Appl. Phys.

H. Masui, A. A. Chakrabory, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate," Jpn. J. Appl. Phys. 44, L1329-L1332 (2005).
[CrossRef]

Nat. Biotechnol.

J. Kling, "Moving diognostics from the bench to the bedside," Nat. Biotechnol. 24, 891-893 (2006).
[CrossRef]

Nature

A. Ivanisevic, J.-Y. Yeh, L. Mawst, T. F. Kuech, and A. B. Ellis, "Semiconductor devices: Light emitting diodes as chemical sensors," Nature 409, 476 (2001).
[CrossRef]

R. Oldenbourg, "A new view on polarization microscopy," Nature 381, 811-812 (1996).
[CrossRef]

Opt. Express

M. F. Schubert, A. Noemaun, S. Chhajed, J. K. Kim, E. F. Schubert and C. Sone, "Encapsulation shape with non-rotational symmetry designed for extraction of polarized light from unpolarized sources," Opt. Express 15, 10452-10457 (2007).
[CrossRef]

S.-S. Lin, K. M. Yemelyanov, E. N. Pugh. Jr., and N. Engheta, "Separation and contrast enhancement of overlapping cast shadow components using polarization," Opt. Express 14, 7099-7108 (2006).
[CrossRef]

Science

E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science 308, 1274-1278 (2005).
[CrossRef]

Other

J. B. Carruthers, "Wireless infrared communications," in Wiley Encyclopedia of Telecommunications, J. G. Proakis, ed., (Wiley, 2002)

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