Abstract

We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize such photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 µm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.

©2007 Optical Society of America

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  5. L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
    [Crossref]
  6. D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
    [Crossref]
  7. H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
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  8. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
    [Crossref] [PubMed]
  9. M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
    [Crossref] [PubMed]
  10. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
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  11. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325–327 (2005).
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  12. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U.D. Keil, and T. Franck, High speed silicon Mach Zehnder modulator, Opt. Express 13, 3129–3135 (2005).
    [Crossref] [PubMed]
  13. D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
    [Crossref] [PubMed]
  14. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, High-speed optical modulation based on carrier depletion in a silicon waveguide, Opt. Express 15, 660–668 (2007).
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  15. Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
    [Crossref]
  16. S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586–588 (2002).
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  17. M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
    [Crossref]
  18. J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
    [Crossref]
  19. M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
    [Crossref]
  20. G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
    [Crossref]
  21. O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
    [Crossref]
  22. M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
    [Crossref]
  23. M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
    [Crossref]
  24. L. Colace, G. Masini, A. Altieri, and G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094–1096 (2006)
    [Crossref]
  25. S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N Bouzaida, and L. Mollard, Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors, Opt. Lett. 28, 1150–1152 (2003).
    [Crossref] [PubMed]
  26. E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
    [Crossref]
  27. J. M. Liu, Photonic Devices, (Cambridge university Press, New York, 2005).
  28. J. Oh, S.K. Baanerjee, and J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581–583 (2004).
    [Crossref]

2007 (1)

2006 (3)

D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
[Crossref] [PubMed]

M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
[Crossref] [PubMed]

L. Colace, G. Masini, A. Altieri, and G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094–1096 (2006)
[Crossref]

2005 (10)

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325–327 (2005).
[Crossref] [PubMed]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
[Crossref]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U.D. Keil, and T. Franck, High speed silicon Mach Zehnder modulator, Opt. Express 13, 3129–3135 (2005).
[Crossref] [PubMed]

2004 (7)

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

G.T. Reed, The optical age of silicon, Nature  427, 595–596 (2004).

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
[Crossref] [PubMed]

G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
[Crossref]

O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
[Crossref]

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

J. Oh, S.K. Baanerjee, and J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581–583 (2004).
[Crossref]

2003 (1)

2002 (2)

Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
[Crossref]

S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586–588 (2002).
[Crossref]

2000 (1)

D. A. B. Miller, Optical Interconnects to Silicon, IEEE J. Sel. Top. Quantum Electron. 6, 1312–1317 (2000).
[Crossref]

1993 (1)

R.A. Soref, Silicon-based optoelectronics, Proc. IEEE 81, 1687–1706 (1993),
[Crossref]

Abbadie, A.

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

Altieri, A.

L. Colace, G. Masini, A. Altieri, and G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094–1096 (2006)
[Crossref]

Assanto, G.

L. Colace, G. Masini, A. Altieri, and G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094–1096 (2006)
[Crossref]

S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586–588 (2002).
[Crossref]

Baanerjee, S.K.

J. Oh, S.K. Baanerjee, and J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581–583 (2004).
[Crossref]

Berroth, M.

M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
[Crossref]

Billon, T.

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

Bouchier, D.

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

Bouzaida, N

Campbell, J.C.

J. Oh, S.K. Baanerjee, and J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581–583 (2004).
[Crossref]

Cannan, D.D.

Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
[Crossref]

Cannon, D.D.

O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
[Crossref]

Cassan, E.

D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
[Crossref] [PubMed]

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N Bouzaida, and L. Mollard, Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors, Opt. Lett. 28, 1150–1152 (2003).
[Crossref] [PubMed]

Cercus, J-L.

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

Chetrit, Y.

Chu, J.O.

G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
[Crossref]

Ciftcioglu, B.

Clerc, C.

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

Cohen, O.

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
[Crossref] [PubMed]

Colace, L.

L. Colace, G. Masini, A. Altieri, and G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094–1096 (2006)
[Crossref]

S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586–588 (2002).
[Crossref]

Crozat, P.

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

Damlencourt, J.F.

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

Debarre, D.

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

Dehlinger, G.

G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
[Crossref]

Dosunmu, O.I.

O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
[Crossref]

El Melhaoui, L.

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

Emsley, M.K.

O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
[Crossref]

Fama, S.

S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586–588 (2002).
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H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

Fédéli, JM.

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

Fédéli, J-M.

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

Foster, M.A.

M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
[Crossref] [PubMed]

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Gaeta, A.L.

M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
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O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
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G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
[Crossref]

Hak, D.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

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D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
[Crossref] [PubMed]

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
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M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

Heitzmann, M.

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N Bouzaida, and L. Mollard, Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors, Opt. Lett. 28, 1150–1152 (2003).
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M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
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Holliger, P.

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
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Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
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Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
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Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
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H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
[Crossref] [PubMed]

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M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
[Crossref]

Kasper, E.

M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
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Kimerling, L.C.

O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
[Crossref]

Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
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G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
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Koster, A.

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

Lardenois, S.

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N Bouzaida, and L. Mollard, Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors, Opt. Lett. 28, 1150–1152 (2003).
[Crossref] [PubMed]

Laval, S.

D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
[Crossref] [PubMed]

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N Bouzaida, and L. Mollard, Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors, Opt. Lett. 28, 1150–1152 (2003).
[Crossref] [PubMed]

Le Roux, X.

D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
[Crossref] [PubMed]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
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Liao, L.

Lipson, M.

M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
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Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325–327 (2005).
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A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, High-speed optical modulation based on carrier depletion in a silicon waveguide, Opt. Express 15, 660–668 (2007).
[Crossref] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
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L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U.D. Keil, and T. Franck, High speed silicon Mach Zehnder modulator, Opt. Express 13, 3129–3135 (2005).
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H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
[Crossref] [PubMed]

Liu, J.

O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
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J. M. Liu, Photonic Devices, (Cambridge university Press, New York, 2005).

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S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586–588 (2002).
[Crossref]

Lupu, A.

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
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Maine, S.

Mangeney, J.

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
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Marris, D.

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
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Masini, G.

L. Colace, G. Masini, A. Altieri, and G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094–1096 (2006)
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S. Fama, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys Lett. 81, 586–588 (2002).
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M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
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Nicolaescu, R.

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
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Oehme, M.

M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
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J. Oh, S.K. Baanerjee, and J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581–583 (2004).
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Ouyang, Q.C.

G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
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Paniccia, M.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, High-speed optical modulation based on carrier depletion in a silicon waveguide, Opt. Express 15, 660–668 (2007).
[Crossref] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
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J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
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Pascal, D.

D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
[Crossref] [PubMed]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N Bouzaida, and L. Mollard, Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors, Opt. Lett. 28, 1150–1152 (2003).
[Crossref] [PubMed]

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325–327 (2005).
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G.T. Reed, The optical age of silicon, Nature  427, 595–596 (2004).

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J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
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H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

Rouviere, M.

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

Rouvière, M.

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

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Samara-Rubio, D.

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U.D. Keil, and T. Franck, High speed silicon Mach Zehnder modulator, Opt. Express 13, 3129–3135 (2005).
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A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
[Crossref] [PubMed]

Schaub, J.D.

G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
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M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
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Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325–327 (2005).
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O.I. Dosunmu, D.D. Cannon, M.K. Emsley, B. Ghyselen, J. Liu, L.C. Kimerling, and M. Selim Ünlü, Resonant Cavity Enhanced Ge Photodetectors for 1550nm Operation on Reflecting Si Substrates, IEEE J. Sel. Top. Quantum Electron. 10, 694–701 (2004).
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M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
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M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
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D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, and S. Laval, Optical modulation by carrier depletion in a silicon PIN diode, Opt. Express 14, 10838–10843 (2006).
[Crossref] [PubMed]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
[Crossref]

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
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L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
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J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

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[Crossref]

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M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
[Crossref]

Xu, Q.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Yam, V.

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

Zheng, Y.

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

App. Phys. Lett. (1)

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, App. Phys. Lett. 85, 701–703 (2004).
[Crossref]

Appl. Phys Lett. (1)

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[Crossref]

Appl. Phys. Lett. (3)

Y. Ishikawa, K. Wada, D.D. Cannan, L. Jifeng, D.L. Hsin-Chiao, and L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett. 82, 2044–2046 (2002).
[Crossref]

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J-M. Fédéli, and L. El Melhaoui, Ultra low loss of 10 successive divisions using silicon-on-insulator microwaguides, Appl. Phys. Lett. 87, 211102–211104 (2005).
[Crossref]

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, JM. Fédéli, J.F. Damlencourt, and J-M. Hartmann, Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 µm operation, Appl. Phys. Lett. 87, 231109–231111 (2005)
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[Crossref]

IEEE Photon. Technol. Lett. (3)

M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, Ge-on-Si Vertical Incidence Photodiodes with 39- GHz bandwidth, IEEE Photon. Technol. Lett. 17, 1510–1512 (2005).
[Crossref]

L. Colace, G. Masini, A. Altieri, and G. Assanto, Waveguide photodetectors for the near infrared in polycristalline germanium on silicon, IEEE Photon. Technol. Lett. 18, 1094–1096 (2006)
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J. Oh, S.K. Baanerjee, and J.C. Campbell, Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers, IEEE Photon. Technol. Lett. 16, 581–583 (2004).
[Crossref]

IEEE Photon. Technol. Letters (1)

G. Dehlinger, S.J. Koester, J.D. Schaub, J.O. Chu, Q.C. Ouyang, and A. Grill, High-speed germanium-on-SOI lateral PIN photodiodes, IEEE Photon. Technol. Letters 16, 2547–2549 (2004).
[Crossref]

J. App. Phys. (1)

J-M. Hartmann, A. Abbadie, A.M. Papon, P. Holliger, G. Rolland, T. Billon, J-M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-µm photodetection, J. App. Phys. 95, 5905–5907 (2004).
[Crossref]

Nature (5)

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, An all -silicon Raman laser, Nature 433, 292–294 (2005).
[Crossref] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature 433, 725–728 (2005).
[Crossref] [PubMed]

M.A. Foster, A.C. Turner, J.E. Sharping, S. Schimdt, M. Lipson, and A.L. Gaeta, Broad-band optical parametric gain on a silicon photonic chip, Nature 441, 960–963 (2006).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor Nature 427, 615–618 (2004).
[Crossref] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Micrometre-scale silicon electro-optic modulator, Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Opt. Eng. (2)

M. Rouvière, M. Halbwax, J-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J-M. Hartmann, and S. Laval, Integration of germanium waveguide photodetectors for intrachip optical interconnects, Opt. Eng. 44, 75402–75406 (2005).
[Crossref]

E. Cassan, D. Marris, M. Rouviere, S. Laval, L. Vivien, and A. Koster, Comparison Between Electrical and Optical Clock Distribution for CMOS Integrated Circuits, Opt. Eng. 44, 105402-1–105402-10 (2005).
[Crossref]

Opt. Express (3)

Opt. Lett. (1)

Opt. Mater. (1)

M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, L.H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, and D. Bouchier, UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si, Opt. Mater. 27, 822–826 (2005).
[Crossref]

Proc. IEEE (1)

R.A. Soref, Silicon-based optoelectronics, Proc. IEEE 81, 1687–1706 (1993),
[Crossref]

Other (3)

G.T. Reed, The optical age of silicon, Nature  427, 595–596 (2004).

International Technology Roadmap for Semiconductors (ITRS), 2006 Edition, Interconnect topic

J. M. Liu, Photonic Devices, (Cambridge university Press, New York, 2005).

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Figures (5)

Fig. 1.
Fig. 1. Ge photodetector integrated into a rib silicon-on-insulator waveguide: (a) schematic diagram of the integration of Ge on Si MSM photodetector in SOI Rib waveguide, (b) electric field profile for the fundamental transverse electric (TE) mode in the SOI waveguide (rib width 1µm; height 380 nm and etching depth 70 nm), (c) electric field amplitude in a longitudinal cross section of the photodetector (3D-FDTD calculation). The 95% absorption length is about 4 µm.

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Fig. 2.
Fig. 2. Scanning electron microscope image of the integrated Ge on Si MSM photodetector cross-section: A silicon oxide layer onto the Ge layer defines the electrode spacing D. The thickness of the Ge layer grown on a 50 nm thick silicon layer is about 330 nm. The metal contact is directly deposited on Ge. The BOX thickness is 1µm.

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Fig. 3.
Fig. 3. Dark current variation with operating voltage: The dark current (without any illumination) is measured from -10V to +10V voltage for a 10µm long Ge on Si MSM photodetector.

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Fig. 4.
Fig. 4. Normalized photoresponse of the Ge on Si photodetector integrated in rib SOI waveguide: The response dependences are measured for a 10 µm long Ge on Si MSM integrated photodetector for 0.5V, 2V and 6V bias and 1.55 µm wavelength (a) The photoresponses are recorded on an sampling oscilloscope after femtosecond laser pulse illumination. The corresponding intrinsic response times are about 46 ps, 30 ps and 19 ps, respectively. (b) RF response as a function of frequency is directly measured from 0.1 GHz to 50 GHz. The corresponding bandwidths are about 8.5 GHz, 15.4 GHz and 25GHz, respectively.

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Fig. 5.
Fig. 5. -3dB bandwidth versus bias voltage: The cut-off frequency is determined for bias voltage ranging from 0V to 7V for a 10 µm long Ge on Si MSM integrated photodetector at a wavelength of 1.55 µm from both RF and pulse experiments.

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