Abstract

Aluminum fluoride thin films have been deposited by magnetron sputtering of an aluminum target with CF4, and CF4 mixed O2 as the working gas onto a room temperature substrate. The quality of the coated AlF3 film applied with 25W sputtering power using CF4 mixed 5% O2 was better than for films deposited using conventional methods. The extinction coefficient of AlF3 was smaller than 6.0×10-4 in the wavelength range of 190nm to 250nm. Single layer antireflection coatings on both sides of a fused silica substrate increased the transmittance from less than 91% for a bare substrate to higher than 96% in the wavelength range between 190nm to 250nm.

© 2007 Optical Society of America

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References

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  1. M. C. Liu, C. C. Lee, M. Kaneko, K. Nakahira and Y. Takano, "Microstructure related properties at 193nm of MgF2 and GdF3 films deposited by resistive heating boat," Appl. Opt. 45, 1368-1374 (2006).
    [CrossRef] [PubMed]
  2. F. Rainer, W. H. Lowdermilk, D. Milam, C. K. Carniglia, T Tuttle Hart and T. L. Lichtenstein, "Materials for optical coatings in the ultraviolet," Appl. Opt. 24, 496-500 (1985).
    [CrossRef] [PubMed]
  3. S. Niisaka, T. Saito, J. Saito, Akira Tanaka, A. Matsumoto, M. Otani, R. Biro, C. Ouchi, M. Hasegawa, Y. Suzuki, and K. Sone, "Development of optical coatings for 157-nm lithography I Coating materials," Appl. Opt. 41, 3242-3247 (2002).
    [CrossRef] [PubMed]
  4. O. R. WoodII, H. G. Craighead, J. E. Sweeney, and P. J. Maloney, "Vacuum ultraviolet loss in magnesium fluoride films," Appl. Opt. 23, 3644-3649 (1984).
    [CrossRef]
  5. Y. Taki, "Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography," Vacuum 74, 431-435 (2004).
    [CrossRef]
  6. A. Zuber, N. Kaiser, J. L. Stehle, "Variable-angle spectroscopic ellipsometry for deep UV characterization of dielectric coating," Thin Solid Films 261, 37-43 (1995).
    [CrossRef]
  7. C. C. Lee, M. C. Liu, M. Kaneko, K. Nakahira, and Y. Takano, "Characterization of AlF3 Thin Films at 193nm by Thermal Evaporation," Appl. Opt. 44, 7333-7338 (2005).
    [CrossRef] [PubMed]
  8. T. Yoshida, K. Nishimoto, K. Sekine, and K. Etoh, "Fluoride antireflection coatings for deep ultraviolet optics deposited by ion-beam sputtering," Appl. Opt. 45, 1375-1379 (2006).
    [CrossRef] [PubMed]
  9. P. Beckmann and A. Spizzichino, "Random rough surface: I. surface generated by random process," in The Scattering of Electromagnetic Waves from Rough Surfaces, (Norwood, MA, Artech House, Inc., 1987) pp.70-98.

2006

2005

2004

Y. Taki, "Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography," Vacuum 74, 431-435 (2004).
[CrossRef]

2002

1995

A. Zuber, N. Kaiser, J. L. Stehle, "Variable-angle spectroscopic ellipsometry for deep UV characterization of dielectric coating," Thin Solid Films 261, 37-43 (1995).
[CrossRef]

1985

1984

Akira Tanaka, J.

Carniglia, C. K.

Craighead, H. G.

Etoh, K.

Kaiser, N.

A. Zuber, N. Kaiser, J. L. Stehle, "Variable-angle spectroscopic ellipsometry for deep UV characterization of dielectric coating," Thin Solid Films 261, 37-43 (1995).
[CrossRef]

Kaneko, M.

Lee, C. C.

Liu, M. C.

Lowdermilk, W. H.

Maloney, P. J.

Milam, D.

Nakahira, K.

Niisaka, S.

Nishimoto, K.

Rainer, F.

Saito, J.

Saito, T.

Sekine, K.

Stehle, J. L.

A. Zuber, N. Kaiser, J. L. Stehle, "Variable-angle spectroscopic ellipsometry for deep UV characterization of dielectric coating," Thin Solid Films 261, 37-43 (1995).
[CrossRef]

Sweeney, J. E.

Takano, Y.

Taki, Y.

Y. Taki, "Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography," Vacuum 74, 431-435 (2004).
[CrossRef]

Wood, O. R.

Yoshida, T.

Zuber, A.

A. Zuber, N. Kaiser, J. L. Stehle, "Variable-angle spectroscopic ellipsometry for deep UV characterization of dielectric coating," Thin Solid Films 261, 37-43 (1995).
[CrossRef]

Appl. Opt.

Thin Solid Films

A. Zuber, N. Kaiser, J. L. Stehle, "Variable-angle spectroscopic ellipsometry for deep UV characterization of dielectric coating," Thin Solid Films 261, 37-43 (1995).
[CrossRef]

Vacuum

Y. Taki, "Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography," Vacuum 74, 431-435 (2004).
[CrossRef]

Other

P. Beckmann and A. Spizzichino, "Random rough surface: I. surface generated by random process," in The Scattering of Electromagnetic Waves from Rough Surfaces, (Norwood, MA, Artech House, Inc., 1987) pp.70-98.

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Figures (9)

Fig. 1.
Fig. 1.

Transmittance spectra of AlF3 thin films prepared with 110sccm CF4 at different sputtering DC powers.

Fig. 2(a).
Fig. 2(a).

Transmittance spectra of AlF3 thin films prepared with CF4 (110sccm) and CF4 with 5% O2

Fig. 2(b).
Fig. 2(b).

Transmittance spectra of AlF3 thin films prepared with CF4 (110sccm) and CF4 with 5% O2 (65sccm) at 30W sputtering DC power.

Fig. 3.
Fig. 3.

Extinction coefficient of aluminum fluoride films prepared at different sputtering powers with 110 sccm CF4 gas.

Fig. 4(a).
Fig. 4(a).

Extinction coefficient of AlF3 thin films deposited with CF4 (110 sccm) and CF4 mixed with 5%O2 (65 sccm) at 25W sputtering DC power.

Fig. 4(b).
Fig. 4(b).

Extinction coefficient of AlF3 thin films deposited with CF4 (110 sccm) and CF4 mixed with 5% O2 (65 sccm) at 30W sputtering DC power.

Fig. 5(a).
Fig. 5(a).

Refractive index of AlF3 thin films deposited with CF4 (110 sccm) and CF4 mixed with 5%O2 (65 sccm) at 25W sputtering DC power.

Fig. 5(b).
Fig. 5(b).

Refractive index of AlF3 thin films deposited with CF4 (110 sccm) and CF4 mixed with 5%O2 (65 sccm) at 25W sputtering DC power.

Fig. 6.
Fig. 6.

The theoretical and experimental transmittance of the antireflection coating on fused silica substrate.

Tables (1)

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Table 1. Surface roughness of AlF3 thin films with different sputtering powers

Equations (2)

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S T = T ( 1 exp { [ 2 π ( 1 n f ) σ λ ] 2 } )
L A = 1 exp ( 4 π kd λ )

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