Aluminum fluoride thin films have been deposited by magnetron sputtering of an aluminum target with CF4, and CF4 mixed O2 as the working gas onto a room temperature substrate. The quality of the coated AlF3 film applied with 25W sputtering power using CF4 mixed 5% O2 was better than for films deposited using conventional methods. The extinction coefficient of AlF3 was smaller than 6.0×10-4 in the wavelength range of 190nm to 250nm. Single layer antireflection coatings on both sides of a fused silica substrate increased the transmittance from less than 91% for a bare substrate to higher than 96% in the wavelength range between 190nm to 250nm.
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