Abstract

GaAs spacer thicknesses are varied to tune the coupling between InGaAs surface quantum dots (QDs) and multilayers of buried QDs. Temperature and excitation intensity dependence of the photoluminescence together with time resolved photoluminescence reveal that coupling between layers of QDs and consequently the optical properties of both the surface and the buried QDs significantly depend on the GaAs spacer. This work provides an experimental method to tune and control the optical performance of surface QDs.

©2007 Optical Society of America

Full Article  |  PDF Article
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References

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  1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures, (John Wiley & Sons, New York/Chichester, 1998).
  2. M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
    [Crossref] [PubMed]
  3. S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
    [Crossref]
  4. P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, “Quantum dot opto-electronic devices,” Annu. Rev. Mater. Sci. 34, 1 (2004).
    [Crossref]
  5. N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
    [Crossref]
  6. F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
    [Crossref]
  7. Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune, “Theory of strain states in InAs quantum dots and dependence on their capping layers,” J. Appl. Phys. 98, 063502, 2005.
    [Crossref]
  8. H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Appl. Phys. Lett. 73, 2742 (1998).
    [Crossref]
  9. J. Z. Wang, Z. Yang, C. L. Yang, and Z.G. Wang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Appl. Phys. Lett. 77, 2837 (2000).
    [Crossref]
  10. Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
    [Crossref]
  11. Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
    [Crossref]
  12. C. Y. Zhang, H. C. Yeh, M. T. Kuroki, and T. H. Wang, “Single-quantum-dot-based DNA nanosensor,” Nat. Mater. 4, 826 (2005).
    [Crossref] [PubMed]
  13. W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
    [Crossref] [PubMed]
  14. K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
    [Crossref]
  15. E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
    [Crossref]
  16. B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
    [Crossref]
  17. B. L. Liang, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dots stacking on multilayer buried quantum dots,” Appl. Phys. Lett. 89, 243124 (2006).
    [Crossref]
  18. Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
    [Crossref]
  19. P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).
  20. V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
    [Crossref]
  21. Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
    [Crossref]
  22. R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, “Excitation transfer in self-organized asymmetric quantum dot pair,” Phys. Rev. B. 58, R10151 (1998).
    [Crossref]

2006 (3)

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dots stacking on multilayer buried quantum dots,” Appl. Phys. Lett. 89, 243124 (2006).
[Crossref]

2005 (6)

Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
[Crossref]

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

C. Y. Zhang, H. C. Yeh, M. T. Kuroki, and T. H. Wang, “Single-quantum-dot-based DNA nanosensor,” Nat. Mater. 4, 826 (2005).
[Crossref] [PubMed]

Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune, “Theory of strain states in InAs quantum dots and dependence on their capping layers,” J. Appl. Phys. 98, 063502, 2005.
[Crossref]

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

2004 (3)

P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, “Quantum dot opto-electronic devices,” Annu. Rev. Mater. Sci. 34, 1 (2004).
[Crossref]

P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

2002 (2)

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

2001 (3)

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

2000 (2)

N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
[Crossref]

J. Z. Wang, Z. Yang, C. L. Yang, and Z.G. Wang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Appl. Phys. Lett. 77, 2837 (2000).
[Crossref]

1998 (2)

H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Appl. Phys. Lett. 73, 2742 (1998).
[Crossref]

R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, “Excitation transfer in self-organized asymmetric quantum dot pair,” Phys. Rev. B. 58, R10151 (1998).
[Crossref]

Abbey, B.

P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).

Abstreiter, G.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Adlkofer, K.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Bayer, M.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Bhattacharya, P.

P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, “Quantum dot opto-electronic devices,” Annu. Rev. Mater. Sci. 34, 1 (2004).
[Crossref]

Bichler, M.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Bimberg, D.

D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures, (John Wiley & Sons, New York/Chichester, 1998).

Cai, W.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Cao, Q. Z.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Chen, K.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Chen, P.

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, “Excitation transfer in self-organized asymmetric quantum dot pair,” Phys. Rev. B. 58, R10151 (1998).
[Crossref]

Chen, X. Y.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

CHeysens, O.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Chua, S. J.

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

Chy, Y. H.

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

Chyi, J. I.

N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
[Crossref]

Decuir Jr., E. A.

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

Deutschmann, R. A.

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Duan, R. F.

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Duijs, E. F.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Fafard, S.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Feng, S. L.

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Ferdos, F.

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

Findeis, F.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Forchel, A.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Gambhir, S. S.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Ghosh, S.

P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, “Quantum dot opto-electronic devices,” Annu. Rev. Mater. Sci. 34, 1 (2004).
[Crossref]

Grundmann, M.

D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures, (John Wiley & Sons, New York/Chichester, 1998).

Hawrylak, P.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Heitz, R.

R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, “Excitation transfer in self-organized asymmetric quantum dot pair,” Phys. Rev. B. 58, R10151 (1998).
[Crossref]

Hinzer, K.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Hove, P.

P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).

Hsu, T. M.

N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
[Crossref]

Huang, C. C.

N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
[Crossref]

Jones, T. S.

P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).

Kissel, H.

Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
[Crossref]

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

Korkusinski, M.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Kuroki, M. T.

C. Y. Zhang, H. C. Yeh, M. T. Kuroki, and T. H. Wang, “Single-quantum-dot-based DNA nanosensor,” Nat. Mater. 4, 826 (2005).
[Crossref] [PubMed]

Larsson, A.

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

Le Ru, E. C.

P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).

Ledentsov, N. N.

D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures, (John Wiley & Sons, New York/Chichester, 1998).

Li, Q.

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Li, S. S.

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Liang, B. L.

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dots stacking on multilayer buried quantum dots,” Appl. Phys. Lett. 89, 243124 (2006).
[Crossref]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

Liu, H. C.

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Liu, J. L.

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Madhukar, A.

R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, “Excitation transfer in self-organized asymmetric quantum dot pair,” Phys. Rev. B. 58, R10151 (1998).
[Crossref]

Manasreh, M. O.

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

Matsumoto, T.

Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune, “Theory of strain states in InAs quantum dots and dependence on their capping layers,” J. Appl. Phys. 98, 063502, 2005.
[Crossref]

Mazur, Yu. I.

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dots stacking on multilayer buried quantum dots,” Appl. Phys. Lett. 89, 243124 (2006).
[Crossref]

Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
[Crossref]

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

Miao, Z. L.

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

Mukhametzhanov, I.

R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, “Excitation transfer in self-organized asymmetric quantum dot pair,” Phys. Rev. B. 58, R10151 (1998).
[Crossref]

Murray, R.

P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).

Nabetani, Y.

Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune, “Theory of strain states in InAs quantum dots and dependence on their capping layers,” J. Appl. Phys. 98, 063502, 2005.
[Crossref]

Nee, T. E.

N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
[Crossref]

Nishi, K.

H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Appl. Phys. Lett. 73, 2742 (1998).
[Crossref]

Niu, Z. C.

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Novikov,, B.

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

Sackmann, E.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Sadeghi, M.

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

Saito, H.

H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Appl. Phys. Lett. 73, 2742 (1998).
[Crossref]

Salamo, G. J.

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dots stacking on multilayer buried quantum dots,” Appl. Phys. Lett. 89, 243124 (2006).
[Crossref]

Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
[Crossref]

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

Sasikala, G.

Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune, “Theory of strain states in InAs quantum dots and dependence on their capping layers,” J. Appl. Phys. 98, 063502, 2005.
[Crossref]

Seydmohamadi, Sh.

Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
[Crossref]

Shin, D. W.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Stern, O.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Stiff-Roberts, A. D.

P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, “Quantum dot opto-electronic devices,” Annu. Rev. Mater. Sci. 34, 1 (2004).
[Crossref]

Suemune, I.

Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune, “Theory of strain states in InAs quantum dots and dependence on their capping layers,” J. Appl. Phys. 98, 063502, 2005.
[Crossref]

Sugou, S.

H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Appl. Phys. Lett. 73, 2742 (1998).
[Crossref]

Talalaev, V.

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

Tanaka, M.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Tarasov, G. G.

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

Tomm, J.

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

Tomm, J. W.

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

Tonkikh, A.

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

Tripathy, S.

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

Wang, J.

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Wang, J. Z.

J. Z. Wang, Z. Yang, C. L. Yang, and Z.G. Wang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Appl. Phys. Lett. 77, 2837 (2000).
[Crossref]

Wang, S. M.

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

Wang, S. X.

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Wang, T. H.

C. Y. Zhang, H. C. Yeh, M. T. Kuroki, and T. H. Wang, “Single-quantum-dot-based DNA nanosensor,” Nat. Mater. 4, 826 (2005).
[Crossref] [PubMed]

Wang, Z. M.

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

Wang, Z.G.

J. Z. Wang, Z. Yang, C. L. Yang, and Z.G. Wang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Appl. Phys. Lett. 77, 2837 (2000).
[Crossref]

Wang, Zh. M.

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dots stacking on multilayer buried quantum dots,” Appl. Phys. Lett. 89, 243124 (2006).
[Crossref]

Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
[Crossref]

Wasilewski, Z. R.

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Wei, Y. Q.

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

Wei, Z. F.

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Werner, P.

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

Xia, J. B.

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Xiao, M.

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

Xu, S. J.

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Yang, C. L.

J. Z. Wang, Z. Yang, C. L. Yang, and Z.G. Wang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Appl. Phys. Lett. 77, 2837 (2000).
[Crossref]

Yang, F. H.

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Yang, Z.

J. Z. Wang, Z. Yang, C. L. Yang, and Z.G. Wang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Appl. Phys. Lett. 77, 2837 (2000).
[Crossref]

Yeh, H. C.

C. Y. Zhang, H. C. Yeh, M. T. Kuroki, and T. H. Wang, “Single-quantum-dot-based DNA nanosensor,” Nat. Mater. 4, 826 (2005).
[Crossref] [PubMed]

Yeh, N. T.

N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
[Crossref]

Zakharov, N.

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

Zhang, C. Y.

C. Y. Zhang, H. C. Yeh, M. T. Kuroki, and T. H. Wang, “Single-quantum-dot-based DNA nanosensor,” Nat. Mater. 4, 826 (2005).
[Crossref] [PubMed]

Zhang, Y. W.

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

Zhao, Q. X.

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

Zheng, H. Z.

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Zheng, Y. P.

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Zrenner, A.

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Annu. Rev. Mater. Sci. (1)

P. Bhattacharya, S. Ghosh, and A. D. Stiff-Roberts, “Quantum dot opto-electronic devices,” Annu. Rev. Mater. Sci. 34, 1 (2004).
[Crossref]

Appl. Phys. Lett. (10)

N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, “Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures,” Appl. Phys. Lett. 76, 1567 (2000).
[Crossref]

F. Ferdos, S. M. Wang, Y. Q. Wei, A. Larsson, M. Sadeghi, and Q. X. Zhao, “Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots,” Appl. Phys. Lett. 81, 1195 (2002).
[Crossref]

H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Appl. Phys. Lett. 73, 2742 (1998).
[Crossref]

J. Z. Wang, Z. Yang, C. L. Yang, and Z.G. Wang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Appl. Phys. Lett. 77, 2837 (2000).
[Crossref]

Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chy, P. Chen, and S. Tripathy, “Optical properties of InAs/GaAs surface quantum dots,” Appl. Phys. Lett. 86, 031914 (2005).
[Crossref]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, G. J. Salamo, E. A. Decuir Jr., and M. O. Manasreh, “Correlation between surface and buried InAs quantum dots,” Appl. Phys. Lett. 89, 043125 (2006).
[Crossref]

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dots stacking on multilayer buried quantum dots,” Appl. Phys. Lett. 89, 243124 (2006).
[Crossref]

Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel, “Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots,” Appl. Phys. Lett. 87, 213105 (2005).
[Crossref]

V. Talalaev, J. Tomm, N. Zakharov, P. Werner, B. Novikov,, and A. Tonkikh, “Transient spectroscopy of InAs quantum dot molecules,” Appl. Phys. Lett. 85, 284 (2004).
[Crossref]

Yu. I. Mazur, Z. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, “Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures,” Appl. Phys. Lett. 86, 063102 (2005).
[Crossref]

J. Appl. Phys. (3)

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “InAs/GaAs singleelectron quantum dot qubit,” J. Appl. Phys. 90, 6151 (2001).
[Crossref]

Z. F. Wei, S. J. Xu, R. F. Duan, Q. Li, J. Wang, Y. P. Zheng, and H. C. Liu, “Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density,” J. Appl. Phys. 98, 084305 (2005).
[Crossref]

Y. Nabetani, T. Matsumoto, G. Sasikala, and I. Suemune, “Theory of strain states in InAs quantum dots and dependence on their capping layers,” J. Appl. Phys. 98, 063502, 2005.
[Crossref]

Nano Lett. (1)

W. Cai, D. W. Shin, K. Chen, O. CHeysens, Q. Z. Cao, S. X. Wang, S. S. Gambhir, and X. Y. Chen, “Peptide-labeled near-infrared quantum dots for Imaging tumor vasculature in living subjects,” Nano Lett. 6, 669 (2006).
[Crossref] [PubMed]

Nat. Mater. (1)

C. Y. Zhang, H. C. Yeh, M. T. Kuroki, and T. H. Wang, “Single-quantum-dot-based DNA nanosensor,” Nat. Mater. 4, 826 (2005).
[Crossref] [PubMed]

Phys. Chem. Chem. Phys. (1)

K. Adlkofer, E. F. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, “Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density,” Phys. Chem. Chem. Phys. 4, 785(2002).
[Crossref]

Phys. Rev. B. (1)

R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, “Excitation transfer in self-organized asymmetric quantum dot pair,” Phys. Rev. B. 58, R10151 (1998).
[Crossref]

Phys. Stat. Sol. (b) (1)

E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, and E. Sackmann, “Influence of Thiol coupling on photoluminescence of near surface InAs quantum dots,” Phys. Stat. Sol. (b) 224, 871 (2001).
[Crossref]

Science (1)

M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, “Coupling and Entangling of Quantum States in QuantumDot Molecules,” Science 291, 451 (2001).
[Crossref] [PubMed]

Thin solid Films. (1)

P. Hove, B. Abbey, E. C. Le Ru, R. Murray, and T. S. Jones, “Strain-interactions between InAs/GaAs quantum dots ayers,” Thin solid Films. 464–465, 225 (2004).

Other (1)

D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures, (John Wiley & Sons, New York/Chichester, 1998).

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Figures (5)

Fig. 1.
Fig. 1.

1μm×1μm AFM image of the SQDs for the sample with (a) 30 ML spacer, (b) 60 ML spacer, and (c) 120 ML spacer.

Fig. 2.
Fig. 2.

Low temperature (10K) PL spectrum of the sample with (a) 30 ML spacer, (b) 60 ML spacer, and (c) 120 ML spacer.

Fig. 3.
Fig. 3.

Integrated PL intensities as a function of the excitation intensity

Fig. 4.
Fig. 4.

Integrated PL intensities as a function of the temperature

Fig. 5.
Fig. 5.

Time-resolved PL of BQDs measured at ground state transition

Metrics