Abstract

An investigation of the effects of an embedded AlGaN δ-layer on the photoluminescence (PL) efficiency of an InGaN/GaN single quantum well (SQW) is presented. In particular, we focus on the dependence of the overlap integral between the electron and hole envelope wavefunctions on the AlGaN δ-layer thickness, aluminum composition, and Mg δ-doping concentration. We have demonstrated by means of simulation and experiment that the overlap integral and PL efficiency are enhanced with increasing δ-layer thickness. They have been shown to be raised further by increasing aluminum composition and Mg δ-doping concentration in the δ-layer.

© 2007 Optical Society of America

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  1. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
    [CrossRef]
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    [CrossRef]
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  5. S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
    [CrossRef]
  6. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  10. S. L. Chuang and C. S. Chang, "k⋅p method for strained wurtzite semiconductors," Phys. Rev. B 54, 2491-2504 (1996).
    [CrossRef]
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    [CrossRef]
  12. J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. Denbaars, "Simulation and Optimization of 420nm InGaN/GaN Laser Diodes," Proc. SPIE 3944-03, 28-39 (2000).
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  13. J. K. Sheu, G. C. Chi, and M. J. Jou, "Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice," IEEE Elec. Dev. Lett. 22,160-162 (2001).
    [CrossRef]
  14. Y.-B. Pan, Z.-J. Yang, Y. Lu, M. Lu, C.-Y. Hu, T.-J. Yu, X.-D. Hu, and G.-Y. Zhang, "Improvement of properties of p-GaN by Mg delta doping," Chin. Phys. Lett. 21,2016-2018 (2004).
    [CrossRef]

2006 (1)

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

2004 (2)

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Y.-B. Pan, Z.-J. Yang, Y. Lu, M. Lu, C.-Y. Hu, T.-J. Yu, X.-D. Hu, and G.-Y. Zhang, "Improvement of properties of p-GaN by Mg delta doping," Chin. Phys. Lett. 21,2016-2018 (2004).
[CrossRef]

2003 (1)

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

2002 (1)

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

2001 (1)

J. K. Sheu, G. C. Chi, and M. J. Jou, "Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice," IEEE Elec. Dev. Lett. 22,160-162 (2001).
[CrossRef]

2000 (1)

O. Mayrock, H.-J. Wünsche, and F. Henneberger, "Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells," Phys. Rev. B 62, 16870-16880 (2000).
[CrossRef]

1998 (1)

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998).
[CrossRef]

1997 (1)

C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett. 70, 2577-2579 (1997).
[CrossRef]

1996 (1)

S. L. Chuang and C. S. Chang, "k⋅p method for strained wurtzite semiconductors," Phys. Rev. B 54, 2491-2504 (1996).
[CrossRef]

Adivarahan, V.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Bhat, J. C.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Chang, C. S.

S. L. Chuang and C. S. Chang, "k⋅p method for strained wurtzite semiconductors," Phys. Rev. B 54, 2491-2504 (1996).
[CrossRef]

Chen, C.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Chi, G. C.

J. K. Sheu, G. C. Chi, and M. J. Jou, "Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice," IEEE Elec. Dev. Lett. 22,160-162 (2001).
[CrossRef]

Chitnis, A.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Chuang, S. L.

S. L. Chuang and C. S. Chang, "k⋅p method for strained wurtzite semiconductors," Phys. Rev. B 54, 2491-2504 (1996).
[CrossRef]

Collins, D.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Fletcher, R. M.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Funato, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

Hangleiter, A.

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998).
[CrossRef]

Henneberger, F.

O. Mayrock, H.-J. Wünsche, and F. Henneberger, "Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells," Phys. Rev. B 62, 16870-16880 (2000).
[CrossRef]

Holcomb, M. O.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Im, J. S.

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998).
[CrossRef]

Jou, M. J.

J. K. Sheu, G. C. Chi, and M. J. Jou, "Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice," IEEE Elec. Dev. Lett. 22,160-162 (2001).
[CrossRef]

Kawakami, Y.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

Kawata, Y.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Khan, M. A.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Kollmer, H.

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998).
[CrossRef]

Kosugi, T.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

Kuokstis, E.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Ludowise, M. J.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Mandavilli, V.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Martin, P. S.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Matsuyama, Y.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Mayrock, O.

O. Mayrock, H.-J. Wünsche, and F. Henneberger, "Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells," Phys. Rev. B 62, 16870-16880 (2000).
[CrossRef]

Miki, O.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Morita, D.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Mukai, T.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Murayama, T.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Nagahama, S.-I.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Narukawa, Y.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

Neugebauer, J.

C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett. 70, 2577-2579 (1997).
[CrossRef]

Off, J.

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998).
[CrossRef]

Pan, Y.-B.

Y.-B. Pan, Z.-J. Yang, Y. Lu, M. Lu, C.-Y. Hu, T.-J. Yu, X.-D. Hu, and G.-Y. Zhang, "Improvement of properties of p-GaN by Mg delta doping," Chin. Phys. Lett. 21,2016-2018 (2004).
[CrossRef]

Rudaz, S. L.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Sakamoto, K.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Sano, M.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Scholz, F.

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998).
[CrossRef]

Shatalov, M.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Sheu, J. K.

J. K. Sheu, G. C. Chi, and M. J. Jou, "Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice," IEEE Elec. Dev. Lett. 22,160-162 (2001).
[CrossRef]

Sohmer, A.

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells," Phys. Rev. B 57, R9435-R9438 (1998).
[CrossRef]

Steigerwald, D. A.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Top. Quantum Electron. 8, 310-320 (2002).
[CrossRef]

Takahashi, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

Ueda, M.

M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar GaN Bulk Substrates," Jpn. J. Appl. Phys. 45, L659-L662 (2006).
[CrossRef]

Van de Walle, C. G.

C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett. 70, 2577-2579 (1997).
[CrossRef]

Wünsche, H.-J.

O. Mayrock, H.-J. Wünsche, and F. Henneberger, "Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells," Phys. Rev. B 62, 16870-16880 (2000).
[CrossRef]

Yamamoto, M.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Yanamoto, T.

S.-I. Nagahama, M. Sano, T. Yanamoto, D. Morita, O. Miki, K. Sakamoto, M. Yamamoto, Y. Matsuyama, Y. Kawata, T. Murayama, and T. Mukai, "GaN-based laser diodes emitting from ultraviolet to blue-green," Proc. SPIE 4995, 108-116 (2003).
[CrossRef]

Yang, J.

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

Yang, Z.-J.

Y.-B. Pan, Z.-J. Yang, Y. Lu, M. Lu, C.-Y. Hu, T.-J. Yu, X.-D. Hu, and G.-Y. Zhang, "Improvement of properties of p-GaN by Mg delta doping," Chin. Phys. Lett. 21,2016-2018 (2004).
[CrossRef]

Appl. Phys. Lett. (2)

A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett. 84, 3663-3665 (2004).
[CrossRef]

C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett. 70, 2577-2579 (1997).
[CrossRef]

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Figures (7)

Fig. 1.
Fig. 1.

Energy band diagrams and wavefunctions of (a) 4-nm-thick In0.15Ga0.85N SQW (Tδ=0nm), (b) QW with Tδ of 0.4nm, i.e., In0.15Ga0.85N (2nm) - Al0.05Ga0.95N (0.4nm) -In0.15Ga0.85N (2nm) QW, and (c) QW with Tδ of 1.0nm sandwiched between 10-nm-thick GaN barriers, calculated with no built-in interface polarization charge considered.

Fig. 2.
Fig. 2.

Overlap integral between the electron and hole envelope wavefunctions as a function of the δ-layer thickness obtained without built-in interface polarization charge.

Fig. 3.
Fig. 3.

Energy band diagrams and wavefunctions of (a) 4-nm-thick In0.15Ga0.85N SQW, (b) QW with Tδ of 0.4nm, and (c) QW with Tδ of 1.0nm sandwiched between 10-nm-thick GaN barriers, obtained with built-in interface polarization charge considered.

Fig. 4.
Fig. 4.

Overlap integral as a function of the δ-layer thickness obtained with built-in interface polarization charge considered for different indium compositions. The PL peak intensity has been measured for the indium composition of 15%.

Fig. 5.
Fig. 5.

Measured PL intensity at room temperature versus the δ-layer thickness for different laser pump powers (densities) (PL) when the indium composition is as high as 15%.

Fig. 6.
Fig. 6.

Overlap integral versus the δ-layer thickness for different aluminum compositions of the δ-layer when the indium content in the QW is as high as 15%.

Fig. 7.
Fig. 7.

Overlap integral as a function of Mg-doping concentrations in the δ-layer for different indium contents when the δ-layer thickness is 0.4nm.

Equations (1)

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z ( ε ψ z ) = P sp ( x ) z q ( p n + N D N A ) + 2 z [ e 31 a sub a ( x ) a ( x ) e 33 a sub a ( x ) a ( x ) c 13 c 33 ]

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