Abstract

We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 μm wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers.

© 2007 Optical Society of America

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  3. H. Rong, Y. -H. Kuo, S. Xu, A. Liu, R. Jones, M. Paniccia, O. Cohen, and O. Raday, "Monolithic integrated Raman silicon laser," Opt. Express 14, 6705-6712 (2006).
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  4. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. J. Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Express 15, 660-668 (2007).
    [CrossRef] [PubMed]
  5. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
    [CrossRef] [PubMed]
  6. J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
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    [CrossRef]
  12. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210, (2006).
    [CrossRef] [PubMed]
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    [CrossRef]
  16. T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
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  19. K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Travelling-Wave Photodetector Design and Measurements," IEEE J. of Sel. Top. Quantum Electron. 2, 622-628, (1996).
    [CrossRef]

2007

P. C. D. Hobbs, R. B. Laibowitz, F. R. Libsch, N. C. LaBianca, and P. P. Chiniwalla, "Waveguide integrated MIM tunnel junction NIR detectors," Proc. SPIE 6477, 647705, (2007).

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "An Electrically Pumped AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007).
[CrossRef]

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. J. Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Express 15, 660-668 (2007).
[CrossRef] [PubMed]

2006

2005

H. Rong,  et al. "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
[CrossRef] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
[CrossRef] [PubMed]

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

2004

1996

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Travelling-Wave Photodetector Design and Measurements," IEEE J. of Sel. Top. Quantum Electron. 2, 622-628, (1996).
[CrossRef]

1995

A. O. Splett,  et al. "Integrated optoelectronic waveguide detectors in SiGe for optical communications," Proc. SPIE 2550, 224-234, (1995).
[CrossRef]

1990

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

1985

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Barton, J. S.

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

Bowers, J. E.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "An Electrically Pumped AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007).
[CrossRef]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210, (2006).
[CrossRef] [PubMed]

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Travelling-Wave Photodetector Design and Measurements," IEEE J. of Sel. Top. Quantum Electron. 2, 622-628, (1996).
[CrossRef]

Boyraz, O.

Burrus, C. A.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Cannon, D. D.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Capellini, G.

C. Gunn, G. Masini, J. Witzens and G. Capellini, "CMOS Photonics Using Germanium Photodetectors," ECS Transactions 3, 17-24 (2006).
[CrossRef]

Chemla, D. S.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Chetrit, Y.

Chiniwalla, P. P.

P. C. D. Hobbs, R. B. Laibowitz, F. R. Libsch, N. C. LaBianca, and P. P. Chiniwalla, "Waveguide integrated MIM tunnel junction NIR detectors," Proc. SPIE 6477, 647705, (2007).

Ciftcioglu, B.

Cohen, O.

Coldren, L. A.

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

Damen, T. C.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Danielson, D. T.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Demiguel, J. L.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

Deneault, S.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Dummer, M.

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

Fang, A. W.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "An Electrically Pumped AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007).
[CrossRef]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210, (2006).
[CrossRef] [PubMed]

Gan, F.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Geis, M. W.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Giboney, K. S.

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Travelling-Wave Photodetector Design and Measurements," IEEE J. of Sel. Top. Quantum Electron. 2, 622-628, (1996).
[CrossRef]

Gossard, A. C.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Grein, M. E.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Gunn, C.

C. Gunn, G. Masini, J. Witzens and G. Capellini, "CMOS Photonics Using Germanium Photodetectors," ECS Transactions 3, 17-24 (2006).
[CrossRef]

Hobbs, P. C. D.

P. C. D. Hobbs, R. B. Laibowitz, F. R. Libsch, N. C. LaBianca, and P. P. Chiniwalla, "Waveguide integrated MIM tunnel junction NIR detectors," Proc. SPIE 6477, 647705, (2007).

Ishikawa, Y.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Izhaky, N.

Jalali, B.

Johnson, B. C.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

Jones, R.

Jongthammanurak, S.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Kaertner, F. X.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Kimerling, L. C.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Koren, U.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

Kuo, Y. -H.

LaBianca, N. C.

P. C. D. Hobbs, R. B. Laibowitz, F. R. Libsch, N. C. LaBianca, and P. P. Chiniwalla, "Waveguide integrated MIM tunnel junction NIR detectors," Proc. SPIE 6477, 647705, (2007).

Laibowitz, R. B.

P. C. D. Hobbs, R. B. Laibowitz, F. R. Libsch, N. C. LaBianca, and P. P. Chiniwalla, "Waveguide integrated MIM tunnel junction NIR detectors," Proc. SPIE 6477, 647705, (2007).

Lennon, D. M.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Liao, L.

Libsch, F. R.

P. C. D. Hobbs, R. B. Laibowitz, F. R. Libsch, N. C. LaBianca, and P. P. Chiniwalla, "Waveguide integrated MIM tunnel junction NIR detectors," Proc. SPIE 6477, 647705, (2007).

Lipson, M.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
[CrossRef] [PubMed]

Liu, A.

Liu, J. F.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Lyszczarz, T. M.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Masini, G.

C. Gunn, G. Masini, J. Witzens and G. Capellini, "CMOS Photonics Using Germanium Photodetectors," ECS Transactions 3, 17-24 (2006).
[CrossRef]

Michel, J.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Miller, B. I.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

Miller, D. A. B.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Nguyen, H.

Paniccia, M.

Paniccia, M. J.

Park, H.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "An Electrically Pumped AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007).
[CrossRef]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210, (2006).
[CrossRef] [PubMed]

Pastalan, J. Z.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
[CrossRef] [PubMed]

Raday, O.

Raring, J. W.

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

Rodwell, M. J. W.

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Travelling-Wave Photodetector Design and Measurements," IEEE J. of Sel. Top. Quantum Electron. 2, 622-628, (1996).
[CrossRef]

Rong, H.

Rubin, D.

Schmidt, B.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
[CrossRef] [PubMed]

Schulein, R. T.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Spector, S. J.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Splett, A. O.

A. O. Splett,  et al. "Integrated optoelectronic waveguide detectors in SiGe for optical communications," Proc. SPIE 2550, 224-234, (1995).
[CrossRef]

Sysak, M. N.

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

Tauke-Pedretti, A.

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

Wada, K.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

Wiegmann, W.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Witzens, J.

C. Gunn, G. Masini, J. Witzens and G. Capellini, "CMOS Photonics Using Germanium Photodetectors," ECS Transactions 3, 17-24 (2006).
[CrossRef]

Wood, T. H.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Xu, Q.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
[CrossRef] [PubMed]

Xu, S.

Yoon, J. U.

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

Young, M. G.

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

Appl. Phys. Lett.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett. 87, 011110 (2005).
[CrossRef]

T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson, B. I. Miller, J. L. Demiguel, U. Koren and M. G. Young. "Electric Field Screening by Photogenerated Holes in MQWs: A New Mechanism for Absorption Saturation," Appl. Phys. Lett. 57, 1081-1083 (1990).
[CrossRef]

ECS Transactions

C. Gunn, G. Masini, J. Witzens and G. Capellini, "CMOS Photonics Using Germanium Photodetectors," ECS Transactions 3, 17-24 (2006).
[CrossRef]

IEEE J. of Sel. Top. Quantum Electron.

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Travelling-Wave Photodetector Design and Measurements," IEEE J. of Sel. Top. Quantum Electron. 2, 622-628, (1996).
[CrossRef]

IEEE Photon. Technol. Lett.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "An Electrically Pumped AlGaInAs-Silicon Evanescent Amplifier," IEEE Photon. Technol. Lett. 19, 230-232 (2007).
[CrossRef]

M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, "CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
[CrossRef]

A. Tauke-Pedretti, M. Dummer, J. S. Barton, M. N. Sysak, J. W. Raring, and L. A. Coldren, "High Saturation Power and High Gain Integrated Photoreceivers," IEEE Photon. Technol. Lett. 17, 2167-2169 (2005).
[CrossRef]

Nature

H. Rong,  et al. "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
[CrossRef] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometer-scale silicon electro-optic modulator," Nature 435, 325-327 (2005).
[CrossRef] [PubMed]

Opt. Express

Phys. Rev. B

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures," Phys. Rev. B 32, 1043-1060 (1985).
[CrossRef]

Proc. SPIE

P. C. D. Hobbs, R. B. Laibowitz, F. R. Libsch, N. C. LaBianca, and P. P. Chiniwalla, "Waveguide integrated MIM tunnel junction NIR detectors," Proc. SPIE 6477, 647705, (2007).

A. O. Splett,  et al. "Integrated optoelectronic waveguide detectors in SiGe for optical communications," Proc. SPIE 2550, 224-234, (1995).
[CrossRef]

Other

J. F. Liu, "Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform," Proc. Group IV Photonics Conference, ThA2, 2006.
[CrossRef]

Integrated Optics SoftwareFIMMWAVE  4.5, Photon Design, Oxford, U.K. [Online]. Available: http://www.photond.com

J. W. Raring, E. J. Skogen, L. A. Johansson, and L. A. Coldren, "Enhanced frequency response in buried ridge quantum well intermixed SGDBR laser modulators," Proc. CLEO, CWC1, (2004).

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Figures (8)

Fig. 1.
Fig. 1.

(a). Device cross section (b) Top view of a hybrid silicon evanescent photodetector

Fig. 2.
Fig. 2.

(a). A scanning electron microscope (SEM) image of a fabricated device (b) close view of a junction between the input silicon waveguide and the hybrid photodetector.

Fig. 3.
Fig. 3.

(a). TE responsivity as a function of reverse bias at 1550 nm (b) Spectral response for TE polarization.

Fig. 4.
Fig. 4.

Saturation characteristics with different biases.

Fig. 5.
Fig. 5.

I–V curve without light input.

Fig. 6.
Fig. 6.

(a). Capacitance with different reverse bias for a 400 μm long device (b) Capacitance vs. device length.at a reverse bias of 4 V.

Fig. 7.
Fig. 7.

Frequency response with two different bias conditions with a 12 μm wide and 400 μm long III–V mesa.

Fig. 8.
Fig. 8.

(Top) RC limited bandwidth with a 50 Ω termination, solid curve: bandwidth without parasitic capacitance, dotted curve: bandwidth with a parasitic capacitance of 0.1 pF, (Bottom) quantum efficiency as a function of a device length.

Tables (1)

Tables Icon

Table 1. Calculated coupling efficiency from the fundamental mode of the silicon input waveguide to the four different modes of the detector waveguide with calculated III-V confinement factors. The white lines in the middle represent the quantum well layers.

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