Abstract

A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental results show a laser emission in pulsed regime at room temperature, with a threshold current near 1.5 mA.

© 2006 Optical Society of America

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  1. D. Liu and C. Svensson, "Power consumption estimation in CMOS VLSI circuit," IEEE J. Solid-State Circuits 29,663-670 (1994).
    [CrossRef]
  2. G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).
  3. R. Orobtchouk, A. Layadi, H. Gualous, D. Pascal, A. Koster, and S. Laval, "High efficiency light coupling in a submicron SOI waveguide," Appl. Opt. 39,5773-5377 (2000).
    [CrossRef]
  4. Kazmierczak, M. Brière, E. Drouard, P. Bontoux, P. Rojo-Romeo, I. O'Connor, X. Letartre, F. Gaffiot, R. Orobtchouk, T. Benyattou. "Design, simulation, and characterization of a passive optical Add-Dropfilter in SOI technology," IEEE Photonics Technol. Lett. 17,1447-1449 (2005).
    [CrossRef]
  5. W. Bogaerts, R. Baets, P. Dumon, V. Wiaux, S. Beckx, D. Taillaert, B. Luyssaert, J. Van Campenhout, P. Bienstman, D. Van Thourhout, "Nanophotonic Waveguides in Silicon-on-Insulator Fabricated with CMOS Technology," J. Lightwave Technol. 23,401-412 (2005).
    [CrossRef]
  6. T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
    [CrossRef]
  7. M. Fujita, A. Sakai, T. Baba. Ultrasmall and ultralow threshold GaInAsP-InP Microdisk Injection Lasers: design, fabrication, lasing characteristics, and spontaneous emisión factor.IEEE J. Sel. Top. Electon. 5,673-681 (1999).
    [CrossRef]
  8. L. Zhang, E. Hu. "Lasing from InGaAs quantum dots in an injection microdisk," Appl. Phys. Lett. 82,319-321 (2003).
    [CrossRef]
  9. R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
    [CrossRef]
  10. M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
    [CrossRef]
  11. H. Hattori, C. Seassal, E. Touraille, P. Rojo-Romeo, X. Letartre, G. Hollinger, P. Viktorovitch, L. Di Cioccio, M. Zussy, L. El Melhaoui, J.M. Fedeli, "Heterogeneous integration of microdisk lasers on silicon strip wageguides of optical interconnects," to appear in IEEE Photon. Technol. Lett. (2006).
    [CrossRef]
  12. C. J. Seung, K. Djordjev, S. J. Choi, and P. D. Dapkus," Microdisk lasers coupled to output waveguides," IEEE Photon. Technol. Lett. 15,1330-1332 (2003).
    [CrossRef]
  13. H. Park, A. W. Fang, S. Kodama, J. E. Bowers. "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Lett. 13,9460-9464 (2005).
  14. http://alioth.debian.org/projects/tessa/
  15. For such a large structure (~300 µm3), we cannot accurately evaluate quality factors higher than a few 100000 with a reasonable calculation time.
  16. M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
    [CrossRef]

2005 (3)

H. Park, A. W. Fang, S. Kodama, J. E. Bowers. "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Lett. 13,9460-9464 (2005).

Kazmierczak, M. Brière, E. Drouard, P. Bontoux, P. Rojo-Romeo, I. O'Connor, X. Letartre, F. Gaffiot, R. Orobtchouk, T. Benyattou. "Design, simulation, and characterization of a passive optical Add-Dropfilter in SOI technology," IEEE Photonics Technol. Lett. 17,1447-1449 (2005).
[CrossRef]

W. Bogaerts, R. Baets, P. Dumon, V. Wiaux, S. Beckx, D. Taillaert, B. Luyssaert, J. Van Campenhout, P. Bienstman, D. Van Thourhout, "Nanophotonic Waveguides in Silicon-on-Insulator Fabricated with CMOS Technology," J. Lightwave Technol. 23,401-412 (2005).
[CrossRef]

2003 (3)

C. J. Seung, K. Djordjev, S. J. Choi, and P. D. Dapkus," Microdisk lasers coupled to output waveguides," IEEE Photon. Technol. Lett. 15,1330-1332 (2003).
[CrossRef]

G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).

L. Zhang, E. Hu. "Lasing from InGaAs quantum dots in an injection microdisk," Appl. Phys. Lett. 82,319-321 (2003).
[CrossRef]

2002 (1)

R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
[CrossRef]

2001 (1)

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

2000 (2)

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

R. Orobtchouk, A. Layadi, H. Gualous, D. Pascal, A. Koster, and S. Laval, "High efficiency light coupling in a submicron SOI waveguide," Appl. Opt. 39,5773-5377 (2000).
[CrossRef]

1999 (1)

M. Fujita, A. Sakai, T. Baba. Ultrasmall and ultralow threshold GaInAsP-InP Microdisk Injection Lasers: design, fabrication, lasing characteristics, and spontaneous emisión factor.IEEE J. Sel. Top. Electon. 5,673-681 (1999).
[CrossRef]

1997 (1)

T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
[CrossRef]

1994 (1)

D. Liu and C. Svensson, "Power consumption estimation in CMOS VLSI circuit," IEEE J. Solid-State Circuits 29,663-670 (1994).
[CrossRef]

Abstreiter, G.

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

Amann, M-C.

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

Baba, T.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
[CrossRef]

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

M. Fujita, A. Sakai, T. Baba. Ultrasmall and ultralow threshold GaInAsP-InP Microdisk Injection Lasers: design, fabrication, lasing characteristics, and spontaneous emisión factor.IEEE J. Sel. Top. Electon. 5,673-681 (1999).
[CrossRef]

T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
[CrossRef]

Baets, R.

Beckx, S.

Bienstman, P.

Bogaerts, W.

Böhm, G.

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

Bowers, J. E.

H. Park, A. W. Fang, S. Kodama, J. E. Bowers. "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Lett. 13,9460-9464 (2005).

Choi, S. J.

C. J. Seung, K. Djordjev, S. J. Choi, and P. D. Dapkus," Microdisk lasers coupled to output waveguides," IEEE Photon. Technol. Lett. 15,1330-1332 (2003).
[CrossRef]

Dapkus, P. D.

C. J. Seung, K. Djordjev, S. J. Choi, and P. D. Dapkus," Microdisk lasers coupled to output waveguides," IEEE Photon. Technol. Lett. 15,1330-1332 (2003).
[CrossRef]

Djordjev, K.

C. J. Seung, K. Djordjev, S. J. Choi, and P. D. Dapkus," Microdisk lasers coupled to output waveguides," IEEE Photon. Technol. Lett. 15,1330-1332 (2003).
[CrossRef]

Drissi, F. T.

G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).

Dumon, P.

Fang, A. W.

H. Park, A. W. Fang, S. Kodama, J. E. Bowers. "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Lett. 13,9460-9464 (2005).

Fujita, M.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
[CrossRef]

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

M. Fujita, A. Sakai, T. Baba. Ultrasmall and ultralow threshold GaInAsP-InP Microdisk Injection Lasers: design, fabrication, lasing characteristics, and spontaneous emisión factor.IEEE J. Sel. Top. Electon. 5,673-681 (1999).
[CrossRef]

T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
[CrossRef]

Gaffiot, F.

G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).

Gualous, H.

Hu, E.

L. Zhang, E. Hu. "Lasing from InGaAs quantum dots in an injection microdisk," Appl. Phys. Lett. 82,319-321 (2003).
[CrossRef]

Iga, K.

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

Kazmierczak,

Kazmierczak, M. Brière, E. Drouard, P. Bontoux, P. Rojo-Romeo, I. O'Connor, X. Letartre, F. Gaffiot, R. Orobtchouk, T. Benyattou. "Design, simulation, and characterization of a passive optical Add-Dropfilter in SOI technology," IEEE Photonics Technol. Lett. 17,1447-1449 (2005).
[CrossRef]

Kihara, M.

T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
[CrossRef]

Kodama, S.

H. Park, A. W. Fang, S. Kodama, J. E. Bowers. "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Lett. 13,9460-9464 (2005).

Köhler, F.

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

Kokubun, Y.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
[CrossRef]

Koster, A.

Koyama, F.

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

Laval, S.

Layadi, A.

Lisik, Z.

G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).

Liu, D.

D. Liu and C. Svensson, "Power consumption estimation in CMOS VLSI circuit," IEEE J. Solid-State Circuits 29,663-670 (1994).
[CrossRef]

Luyssaert, B.

Matsutani, A.

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

O’Connor, I.

G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).

Orobtchouk, R.

Ortsiefer, M.

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

Park, H.

H. Park, A. W. Fang, S. Kodama, J. E. Bowers. "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Lett. 13,9460-9464 (2005).

Pascal, D.

Sakai, A.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
[CrossRef]

M. Fujita, A. Sakai, T. Baba. Ultrasmall and ultralow threshold GaInAsP-InP Microdisk Injection Lasers: design, fabrication, lasing characteristics, and spontaneous emisión factor.IEEE J. Sel. Top. Electon. 5,673-681 (1999).
[CrossRef]

T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
[CrossRef]

Seung, C. J.

C. J. Seung, K. Djordjev, S. J. Choi, and P. D. Dapkus," Microdisk lasers coupled to output waveguides," IEEE Photon. Technol. Lett. 15,1330-1332 (2003).
[CrossRef]

Shau, R.

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

Svensson, C.

D. Liu and C. Svensson, "Power consumption estimation in CMOS VLSI circuit," IEEE J. Solid-State Circuits 29,663-670 (1994).
[CrossRef]

Taillaert, D.

Tosik, G.

G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).

Ushigome, R.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
[CrossRef]

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

Van Campenhout, J.

Van Thourhout, D.

Watanabe, R.

T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
[CrossRef]

Wiaux, V.

Zhang, L.

L. Zhang, E. Hu. "Lasing from InGaAs quantum dots in an injection microdisk," Appl. Phys. Lett. 82,319-321 (2003).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. Lett. (1)

L. Zhang, E. Hu. "Lasing from InGaAs quantum dots in an injection microdisk," Appl. Phys. Lett. 82,319-321 (2003).
[CrossRef]

IEEE J. Sel. Top. Electon. (1)

M. Fujita, A. Sakai, T. Baba. Ultrasmall and ultralow threshold GaInAsP-InP Microdisk Injection Lasers: design, fabrication, lasing characteristics, and spontaneous emisión factor.IEEE J. Sel. Top. Electon. 5,673-681 (1999).
[CrossRef]

IEEE J. Solid-State Circuits (1)

D. Liu and C. Svensson, "Power consumption estimation in CMOS VLSI circuit," IEEE J. Solid-State Circuits 29,663-670 (1994).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

C. J. Seung, K. Djordjev, S. J. Choi, and P. D. Dapkus," Microdisk lasers coupled to output waveguides," IEEE Photon. Technol. Lett. 15,1330-1332 (2003).
[CrossRef]

IEEE Photonics Technol. Lett. (2)

T. Baba, M. Fujita, A. Sakai, M. Kihara, R. Watanabe. "lasing Charactéristics of GaInAsP-InP strained Quantum-Well microdisk injection lasers with diameter of 2-10 µm," IEEE Photonics Technol. Lett. 9,878-880 (1997).
[CrossRef]

Kazmierczak, M. Brière, E. Drouard, P. Bontoux, P. Rojo-Romeo, I. O'Connor, X. Letartre, F. Gaffiot, R. Orobtchouk, T. Benyattou. "Design, simulation, and characterization of a passive optical Add-Dropfilter in SOI technology," IEEE Photonics Technol. Lett. 17,1447-1449 (2005).
[CrossRef]

J. Lightwave Technol. (1)

Jpn. J. Apl. Phys. (1)

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M-C. Amann, "Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers," Jpn. J. Apl. Phys. 39,1727-1729 (2000).
[CrossRef]

Jpn. J. Appl. Phys. (2)

R. Ushigome, M. Fujita, A. Sakai, T. Baba, Y. Kokubun. "GaInAsP microdisk injection laser with Benzocyclobutene polymer cladding and its athermal effect," Jpn. J. Appl. Phys. 41, 6364-6369 (2002).
[CrossRef]

M. Fujita, R. Ushigome, T. Baba, A. Matsutani, F. Koyama, K. Iga "GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings," Jpn. J. Appl. Phys. 40,5338-5339 (2001).
[CrossRef]

Opt. Lett. (1)

H. Park, A. W. Fang, S. Kodama, J. E. Bowers. "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Lett. 13,9460-9464 (2005).

PATMOS (1)

G. Tosik, F. Gaffiot, Z. Lisik, I. O’Connor, and F. T. Drissi, "Optical versus electrical interconnections for clock distribution in new VLSI technologies," PATMOS 2799,461-470 (2003).

Other (3)

http://alioth.debian.org/projects/tessa/

For such a large structure (~300 µm3), we cannot accurately evaluate quality factors higher than a few 100000 with a reasonable calculation time.

H. Hattori, C. Seassal, E. Touraille, P. Rojo-Romeo, X. Letartre, G. Hollinger, P. Viktorovitch, L. Di Cioccio, M. Zussy, L. El Melhaoui, J.M. Fedeli, "Heterogeneous integration of microdisk lasers on silicon strip wageguides of optical interconnects," to appear in IEEE Photon. Technol. Lett. (2006).
[CrossRef]

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Figures (6)

Fig. 1.
Fig. 1.

Schematic description of an optical link in the framework of an above IC approach.

Fig. 2.
Fig. 2.

Description of the laser structure.

Fig. 3.
Fig. 3.

Membrane microdisk laser showing the bottom (left) and top (right) contacts.

Fig. 4.
Fig. 4.

Field maps (hz component) for 2 WGM, with and without contact slab.

Fig.5.
Fig.5.

IR image of a 8 μ m microdisk under electrical pulsed injection. The pulse duration is 6 ns at 3 MHz.. The pulse current value is 2.7 mA.

Fig 6:
Fig 6:

Spectral response , and P-I curve of the 1 μm thick 8 μm diameter microdisk under electrical pulsed injection. The pulse duration is 6 ns at 3 MHz..

Tables (1)

Tables Icon

Table 1. Influence of the contact slab thickness on the resonant wavelength of 2 WGM.

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