Abstract

The performance of an external-cavity mode-locked semiconductor laser is investigated both theoretically and experimentally. The optimization analysis focuses on the regimes of stable mode locking and the generation of sub-picosecond optical pulses. We demonstrate stable output pulses down to one picosecond duration with more than 30 dB trailing pulse suppression. The limiting factors to the device performance are investigated on the basis of a fully-distributed time-domain model. We find that ultrafast gain dynamics effectively reduce the pulse-shaping strength and inhibit the generation of femtosecond optical pulses.

© 2006 Optical Society of America

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References

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  1. H. Yokoyama, "Highly reliable mode-locked semiconductor lasers," IEICE Trans. Electron. 85, 27-36 (2002).
  2. P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
    [CrossRef]
  3. S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
    [CrossRef]
  4. S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
    [CrossRef]
  5. R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.
  6. J. L. A. Dubbeldam, J. A. Leegwater, and D. Lenstra, "Theory of mode-locked semiconductor lasers with finite absorber relaxation times," Appl. Phys. Lett. 70, 1938-1940 (1997).
    [CrossRef]
  7. G. P. Agrawal and N. A. Olsson, "Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers," IEEE J. Quantum Electron. 25, 2297-2306 (1989).
    [CrossRef]
  8. A. Uskov, J. Mørk, and J. Mark, "Theory of short-pulse gain saturation in semiconductor laser amplifiers," IEEE Photon. Technol. Lett. 4, 443-446 (1992).
    [CrossRef]
  9. J. Mulet and J. Mørk, "Analysis of timing jitter in external-cavity mode-locked semiconductor lasers," IEEE J. Quantum Electron. 42, 3 (2006).
    [CrossRef]
  10. C. Harder and K. Y. Lau and A. Yariv, "Bistability and pulsations in semiconductor lasers with inhomogeneous current injection," IEEE J. Quantum Electron. 18, 1351-1361 (1982).
    [CrossRef]
  11. J. Paslaski and K. Y. Lau, "Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers," Appl. Phys. Lett. 59, 7-9 (1991).
    [CrossRef]
  12. M. Schell, M. Tsuchiya, and T. Kamiya, "Chirp and stability of mode-locked semiconductor lasers," IEEE J. Quantum Electron. 32, 1180-1190 (1996).
    [CrossRef]
  13. H. A. Haus and A. Mecozzi, "Noise of mode-locked lasers," IEEE J. Quantum Electron. 29, 983-996 (1993).
    [CrossRef]
  14. Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
    [CrossRef]

2006 (1)

J. Mulet and J. Mørk, "Analysis of timing jitter in external-cavity mode-locked semiconductor lasers," IEEE J. Quantum Electron. 42, 3 (2006).
[CrossRef]

2002 (1)

H. Yokoyama, "Highly reliable mode-locked semiconductor lasers," IEICE Trans. Electron. 85, 27-36 (2002).

2000 (1)

S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
[CrossRef]

1998 (1)

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

1997 (1)

J. L. A. Dubbeldam, J. A. Leegwater, and D. Lenstra, "Theory of mode-locked semiconductor lasers with finite absorber relaxation times," Appl. Phys. Lett. 70, 1938-1940 (1997).
[CrossRef]

1996 (1)

M. Schell, M. Tsuchiya, and T. Kamiya, "Chirp and stability of mode-locked semiconductor lasers," IEEE J. Quantum Electron. 32, 1180-1190 (1996).
[CrossRef]

1995 (1)

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

1993 (1)

H. A. Haus and A. Mecozzi, "Noise of mode-locked lasers," IEEE J. Quantum Electron. 29, 983-996 (1993).
[CrossRef]

1992 (2)

A. Uskov, J. Mørk, and J. Mark, "Theory of short-pulse gain saturation in semiconductor laser amplifiers," IEEE Photon. Technol. Lett. 4, 443-446 (1992).
[CrossRef]

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

1991 (2)

Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
[CrossRef]

J. Paslaski and K. Y. Lau, "Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers," Appl. Phys. Lett. 59, 7-9 (1991).
[CrossRef]

1989 (1)

G. P. Agrawal and N. A. Olsson, "Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers," IEEE J. Quantum Electron. 25, 2297-2306 (1989).
[CrossRef]

1982 (1)

C. Harder and K. Y. Lau and A. Yariv, "Bistability and pulsations in semiconductor lasers with inhomogeneous current injection," IEEE J. Quantum Electron. 18, 1351-1361 (1982).
[CrossRef]

Agrawal, G. P.

G. P. Agrawal and N. A. Olsson, "Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers," IEEE J. Quantum Electron. 25, 2297-2306 (1989).
[CrossRef]

Alphonse, G. A.

S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
[CrossRef]

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

Andreadakis, N. C.

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

Barty, C.

S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
[CrossRef]

Bischoff, S.

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

Brorson, S. D.

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

Chen, Y. K.

Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
[CrossRef]

Chin, M. A.

Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
[CrossRef]

Connolly, J. C.

S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
[CrossRef]

Delfyett, P. J.

S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
[CrossRef]

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

Diez, S.

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

Dubbeldam, J. L. A.

J. L. A. Dubbeldam, J. A. Leegwater, and D. Lenstra, "Theory of mode-locked semiconductor lasers with finite absorber relaxation times," Appl. Phys. Lett. 70, 1938-1940 (1997).
[CrossRef]

Ehrhardt, E.

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

Florez, L. T.

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

Franck, T.

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

Gee, S.

S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
[CrossRef]

Gmitter, T.

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

Harder, C.

C. Harder and K. Y. Lau and A. Yariv, "Bistability and pulsations in semiconductor lasers with inhomogeneous current injection," IEEE J. Quantum Electron. 18, 1351-1361 (1982).
[CrossRef]

Haus, H. A.

H. A. Haus and A. Mecozzi, "Noise of mode-locked lasers," IEEE J. Quantum Electron. 29, 983-996 (1993).
[CrossRef]

Heritage, J. P.

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

K¨uller, L.

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

Kamiya, T.

M. Schell, M. Tsuchiya, and T. Kamiya, "Chirp and stability of mode-locked semiconductor lasers," IEEE J. Quantum Electron. 32, 1180-1190 (1996).
[CrossRef]

Lau, K. Y.

J. Paslaski and K. Y. Lau, "Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers," Appl. Phys. Lett. 59, 7-9 (1991).
[CrossRef]

C. Harder and K. Y. Lau and A. Yariv, "Bistability and pulsations in semiconductor lasers with inhomogeneous current injection," IEEE J. Quantum Electron. 18, 1351-1361 (1982).
[CrossRef]

Leegwater, J. A.

J. L. A. Dubbeldam, J. A. Leegwater, and D. Lenstra, "Theory of mode-locked semiconductor lasers with finite absorber relaxation times," Appl. Phys. Lett. 70, 1938-1940 (1997).
[CrossRef]

Lenstra, D.

J. L. A. Dubbeldam, J. A. Leegwater, and D. Lenstra, "Theory of mode-locked semiconductor lasers with finite absorber relaxation times," Appl. Phys. Lett. 70, 1938-1940 (1997).
[CrossRef]

Logan, R. A.

Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
[CrossRef]

Ludwig, R.

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

Mark, J.

A. Uskov, J. Mørk, and J. Mark, "Theory of short-pulse gain saturation in semiconductor laser amplifiers," IEEE Photon. Technol. Lett. 4, 443-446 (1992).
[CrossRef]

Mecozzi, A.

H. A. Haus and A. Mecozzi, "Noise of mode-locked lasers," IEEE J. Quantum Electron. 29, 983-996 (1993).
[CrossRef]

Møller-Larsen, A.

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

Mørk, J.

J. Mulet and J. Mørk, "Analysis of timing jitter in external-cavity mode-locked semiconductor lasers," IEEE J. Quantum Electron. 42, 3 (2006).
[CrossRef]

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

A. Uskov, J. Mørk, and J. Mark, "Theory of short-pulse gain saturation in semiconductor laser amplifiers," IEEE Photon. Technol. Lett. 4, 443-446 (1992).
[CrossRef]

Mulet, J.

J. Mulet and J. Mørk, "Analysis of timing jitter in external-cavity mode-locked semiconductor lasers," IEEE J. Quantum Electron. 42, 3 (2006).
[CrossRef]

Nielsen, J. M.

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

Olsson, N. A.

G. P. Agrawal and N. A. Olsson, "Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers," IEEE J. Quantum Electron. 25, 2297-2306 (1989).
[CrossRef]

Paslaski, J.

J. Paslaski and K. Y. Lau, "Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers," Appl. Phys. Lett. 59, 7-9 (1991).
[CrossRef]

Pieper, W.

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

Schell, M.

M. Schell, M. Tsuchiya, and T. Kamiya, "Chirp and stability of mode-locked semiconductor lasers," IEEE J. Quantum Electron. 32, 1180-1190 (1996).
[CrossRef]

Silberberg, Y.

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

Sørensen, M. P.

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

Stoffel, N.

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

Tanbun-Ek, T.

Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
[CrossRef]

Tsuchiya, M.

M. Schell, M. Tsuchiya, and T. Kamiya, "Chirp and stability of mode-locked semiconductor lasers," IEEE J. Quantum Electron. 32, 1180-1190 (1996).
[CrossRef]

Uskov, A.

A. Uskov, J. Mørk, and J. Mark, "Theory of short-pulse gain saturation in semiconductor laser amplifiers," IEEE Photon. Technol. Lett. 4, 443-446 (1992).
[CrossRef]

Weber, H. G.

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

Wu, M. C.

Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
[CrossRef]

Yariv, A.

C. Harder and K. Y. Lau and A. Yariv, "Bistability and pulsations in semiconductor lasers with inhomogeneous current injection," IEEE J. Quantum Electron. 18, 1351-1361 (1982).
[CrossRef]

Yokoyama, H.

H. Yokoyama, "Highly reliable mode-locked semiconductor lasers," IEICE Trans. Electron. 85, 27-36 (2002).

Appl. Phys. Lett. (4)

S. Bischoff, M. P. Sørensen, J. Mørk, S. D. Brorson, T. Franck, J. M. Nielsen, and A. Møller-Larsen, "Pulseshaping mechanism in colliding-pulse mode-locked laser diodes," Appl. Phys. Lett. 67, 3877-3879 (1995).
[CrossRef]

J. L. A. Dubbeldam, J. A. Leegwater, and D. Lenstra, "Theory of mode-locked semiconductor lasers with finite absorber relaxation times," Appl. Phys. Lett. 70, 1938-1940 (1997).
[CrossRef]

J. Paslaski and K. Y. Lau, "Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers," Appl. Phys. Lett. 59, 7-9 (1991).
[CrossRef]

Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, "Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers," Appl. Phys. Lett. 58, 1253-1255 (1991).
[CrossRef]

IEEE J. Quantum Electron. (7)

M. Schell, M. Tsuchiya, and T. Kamiya, "Chirp and stability of mode-locked semiconductor lasers," IEEE J. Quantum Electron. 32, 1180-1190 (1996).
[CrossRef]

H. A. Haus and A. Mecozzi, "Noise of mode-locked lasers," IEEE J. Quantum Electron. 29, 983-996 (1993).
[CrossRef]

G. P. Agrawal and N. A. Olsson, "Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers," IEEE J. Quantum Electron. 25, 2297-2306 (1989).
[CrossRef]

J. Mulet and J. Mørk, "Analysis of timing jitter in external-cavity mode-locked semiconductor lasers," IEEE J. Quantum Electron. 42, 3 (2006).
[CrossRef]

C. Harder and K. Y. Lau and A. Yariv, "Bistability and pulsations in semiconductor lasers with inhomogeneous current injection," IEEE J. Quantum Electron. 18, 1351-1361 (1982).
[CrossRef]

S. Gee, G. A. Alphonse, J. C. Connolly, C. Barty, and P. J. Delfyett, "Ultrashort pulse generation by intracavity spectral shaping and phase compensation of external-cavity modelocked semiconductor lasers," IEEE J. Quantum Electron. 36, 1035-1040 (2000).
[CrossRef]

P. J. Delfyett, L. T. Florez, N. Stoffel, T. Gmitter, N. C. Andreadakis, Y. Silberberg, J. P. Heritage, and G. A. Alphonse, "High-power ultrafast laser diodes," IEEE J. Quantum Electron. 10, 2203-2219 (1992).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

A. Uskov, J. Mørk, and J. Mark, "Theory of short-pulse gain saturation in semiconductor laser amplifiers," IEEE Photon. Technol. Lett. 4, 443-446 (1992).
[CrossRef]

IEICE Trans. (1)

R. Ludwig, S. Diez, E. Ehrhardt, L. K¨uller, W. Pieper, and H. G. Weber, "A tunable femtosecond modelocked semiconductor laser for applications in OTDM-systems," IEICE Trans. 81, 140-145 (1998). And references therein.

IEICE Trans. Electron. (1)

H. Yokoyama, "Highly reliable mode-locked semiconductor lasers," IEICE Trans. Electron. 85, 27-36 (2002).

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Figures (3)

Fig. 1.
Fig. 1.

(a) Regimes of operation: No laser emission (OFF), stable mode-locking (ML), incomplete mode-locking (IML), and appearance of light-jumps in the light-current characteristics (dashed region). (b) Evolution of the temporal and spectral width of the pulses. Experiments (symbols) and simulations (solid lines).

Fig. 2.
Fig. 2.

(a) Temporal and spectral width of the pulses versus the grating bandwidth. Simulations shown as solid lines and symbols are measurements. (b) Simulated frequency combs for different grating bandwidths.

Fig. 3.
Fig. 3.

Contributions to the pulsewidth. (a) Uncompressed pulsewidth shown by solid lines and after linear chirp removal by dashed lines. Simulations are done including (∗) and artificially turning-off ultrafast effects (◊). (b) Ratio of 3dB saturation energies between SOA and absorber without (dashed) and including (solid) ultrafast effects: the thermalization time for carriers is 1 ps (■) and 5 ps (●).

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