Abstract

In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics.

© 2006 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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  13. Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
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2006

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
[CrossRef]

2005

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

2004

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

2003

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

2002

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

2001

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

2000

S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che, "Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition," Appl. Phys. Lett. 76, 2550-2552 (2000).
[CrossRef]

N. M. Johnson, A. V. Nurmikko, and S. P. DenBaars, "Blue diode lasers," Phys. Today 53, 31-36 (2000).
[CrossRef]

J. M. Marshall, "Analytical procedures for the modeling of hopping transport in disordered semiconductor," Philos. Mag. Lett. 80, 691-701 (2000).
[CrossRef]

1965

D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, "Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors," Rhys. Rev. 140, A202-A220 (1965).

Akasaki, I.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Alderichi, D.

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

Amano, H.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Augustyniak, W. M.

D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, "Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors," Rhys. Rev. 140, A202-A220 (1965).

Baranovskii, S. D.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Bogani, F.

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

Bretagnon, T.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

Che, C. M.

S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che, "Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition," Appl. Phys. Lett. 76, 2550-2552 (2000).
[CrossRef]

Chen, G. H.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Colocci, M.

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

Damilano, B.

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

DenBaars, S. P.

N. M. Johnson, A. V. Nurmikko, and S. P. DenBaars, "Blue diode lasers," Phys. Today 53, 31-36 (2000).
[CrossRef]

Gil, B.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

Gottardo, S.

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

Grandjean, N.

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

Hantke, K.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Haratizadeh, H.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Heber, J. D.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Holtz, P. O.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Hopfield, J. J.

D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, "Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors," Rhys. Rev. 140, A202-A220 (1965).

Iwaya, M.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Johnson, N. M.

N. M. Johnson, A. V. Nurmikko, and S. P. DenBaars, "Blue diode lasers," Phys. Today 53, 31-36 (2000).
[CrossRef]

Kalliakos, S.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

Kamiyama, S.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Koch, J.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Lefebvre, P.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

Li, G. Q.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Li, Q.

Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
[CrossRef]

Marshall, J. M.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

J. M. Marshall, "Analytical procedures for the modeling of hopping transport in disordered semiconductor," Philos. Mag. Lett. 80, 691-701 (2000).
[CrossRef]

Massies, J.

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

Monemar, B.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Morel, A.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

Nurmikko, A. V.

N. M. Johnson, A. V. Nurmikko, and S. P. DenBaars, "Blue diode lasers," Phys. Today 53, 31-36 (2000).
[CrossRef]

Paskov, P. P.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Pozina, G.

H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

Rubel, O.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Rühle, W. W.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Rusli, M. B.

S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che, "Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition," Appl. Phys. Lett. 76, 2550-2552 (2000).
[CrossRef]

Stolz, W.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Taliercio, T.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

Thomas, D. G.

D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, "Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors," Rhys. Rev. 140, A202-A220 (1965).

Thomas, P.

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

Vinattieri, A.

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

Wang, J. N.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Wang, Y. J.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
[CrossRef]

Xu, S. J.

Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
[CrossRef]

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che, "Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition," Appl. Phys. Lett. 76, 2550-2552 (2000).
[CrossRef]

Yang, H.

Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
[CrossRef]

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Yoon, S. F.

S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che, "Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition," Appl. Phys. Lett. 76, 2550-2552 (2000).
[CrossRef]

Yu, D. P.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Yu, M. B.

S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che, "Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition," Appl. Phys. Lett. 76, 2550-2552 (2000).
[CrossRef]

Zhang, X. B.

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

Zhao, D. G.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
[CrossRef]

Zhao, Y.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

Appl. Phys. Lett.

S. J. Xu, G. Q. Li, Y. J. Wang, Y. Zhao, G. H. Chen, D. G. Zhao, H. Yang, D. P. Yu, and J. N. Wang, "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots," Appl. Phys. Lett. 88, 083123 (2006).
[CrossRef]

S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, "Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes," Appl. Phys. Lett. 80, 428-430 (2002).
[CrossRef]

S. J. Xu, M. B. Yu, Rusli, S. F. Yoon, and C. M. Che, "Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition," Appl. Phys. Lett. 76, 2550-2552 (2000).
[CrossRef]

Y. J. Wang, S. J. Xu, Q. Li, D. G. Zhao, and H. Yang, "Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers, " Appl. Phys. Lett. 88, 041903 (2006).
[CrossRef]

J. Optoelectronics and Adv. Materials

O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz and W. W. Rühle, "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy," J. Optoelectronics and Adv. Materials 7, 115-120 (2005).

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J. M. Marshall, "Analytical procedures for the modeling of hopping transport in disordered semiconductor," Philos. Mag. Lett. 80, 691-701 (2000).
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A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, "Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems," Phys. Rev. B 68, 045331 (2003).
[CrossRef]

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H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells," Phys. Stat. sol.(b) 241, 1124-1133 (2004).
[CrossRef]

D. Alderichi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, and J. Massies, "Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells," Phys. Stat. sol.(a) 183, 129-134 (2001).
[CrossRef]

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S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode (Springer, Berlin, 2000).

H. Morkoc, Nitride Semiconductors and Devices, Springer Series in Materials Science, Vol. 32, (Springer, Berlin, 1999).
[CrossRef]

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Figures (4)

Fig. 1.
Fig. 1.

Cross-sectional TEM images of InGaN/GaN QWs: (a) for undoped sample A and (b) for doped sample B. The inset is a low-magnification image showing five periods of InGaN/GaN QWs.

Fig. 2.
Fig. 2.

77 K 3D time-resolved photoluminescence spectra for InGaN/GaN QWs: (a) for undoped sample A and (b) for doped sample B.

Fig. 3.
Fig. 3.

77 K time-resolved PL spectra for InGaN/GaN QWs at different delay times: (a) for undoped sample A and (b) for doped sample B. The solid dots represent the PL decay times as a function of photon energy and the solid lines are drawn to guide the eyes.

Fig. 4.
Fig. 4.

Measured PL decay profiles (empty symbols) for InGaN/GaN QWs at 77 K. The solid lines are the theoretical curves using the model described in details in the text.

Equations (6)

Equations on this page are rendered with MathJax. Learn more.

d n k d t = j = 1 j k m ( n j Γ j k n k Γ k j ) n k Γ r
Γ j k = ν 0 exp [ 2 r jk α ε k ε j + ε k ε j 2 K B T ]
Γ k j = ν 0 exp ( 2 R k α ) d j n j ( t ) i = k m d i n i ( t )
R k = { π j = k m [ d i n i ( t ) ] } 1 2
Γ j k = Γ k j d k n k ( t ) d j n j ( t ) exp ( ε k ε j K B T )
Γ r ( R ) = τ 0 1 exp ( 2 R α )

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