Abstract

We report on power scaling of optically-pumped semiconductor disk lasers using multiple gain scheme. The method allows for significant power improvement while preserving good beam quality. Total power of over 8 W was achieved in dual-gain configuration, while one-gain lasers could produce separately about 4 W, limited by the thermal rollover of the output characteristics. The results show that reduced thermal load to a gain element in a dual-gain cavity allows extending the range of usable pump powers boosting the laser output.

© 2006 Optical Society of America

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  1. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
    [CrossRef]
  2. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
    [CrossRef]
  3. J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
    [CrossRef]
  4. J. E. Hastie, L. G. Morton, S. Calvez, M. D. Dawson, T. Leinonen, M. Pessa, G. Gibson and M. J. Padgett "Red microchip VECSEL array," Opt. Express 13, 7209-7214 (2005).
    [CrossRef] [PubMed]
  5. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron. 5, 561-573 (1999).
    [CrossRef]
  6. C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
    [CrossRef]

2005 (1)

2003 (2)

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

2000 (1)

C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
[CrossRef]

1999 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

1997 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Abram, R.

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Albrecht, T.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Brick, P.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Burns, D.

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Calvez, S.

J. E. Hastie, L. G. Morton, S. Calvez, M. D. Dawson, T. Leinonen, M. Pessa, G. Gibson and M. J. Padgett "Red microchip VECSEL array," Opt. Express 13, 7209-7214 (2005).
[CrossRef] [PubMed]

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Contag, K.

C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
[CrossRef]

Dawson, M. D.

J. E. Hastie, L. G. Morton, S. Calvez, M. D. Dawson, T. Leinonen, M. Pessa, G. Gibson and M. J. Padgett "Red microchip VECSEL array," Opt. Express 13, 7209-7214 (2005).
[CrossRef] [PubMed]

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Ferguson, A. I.

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Gibson, G.

Giesen, A.

C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Hastie, J. E.

J. E. Hastie, L. G. Morton, S. Calvez, M. D. Dawson, T. Leinonen, M. Pessa, G. Gibson and M. J. Padgett "Red microchip VECSEL array," Opt. Express 13, 7209-7214 (2005).
[CrossRef] [PubMed]

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Hopkins, J.-M.

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Hügel, H.

C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
[CrossRef]

Jeon, C. W.

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Larionov, M.

C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
[CrossRef]

Leinonen, T.

Luft, J.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Lutgen, S.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Morton, L. G.

Padgett, M. J.

Pessa, M.

Reill, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Riis, E.

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Späth, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

Stewen, C.

C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
[CrossRef]

Appl. Phys. Lett. (1)

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Sel. Top. Quantum Electron. 5, 561-573 (1999).
[CrossRef]

C. Stewen, K. Contag, M. Larionov, A. Giesen, and H. Hügel, "A 1-kW CW thin disc laser," IEEE J. Sel. Top. Quantum Electron. 6, 650-657 (2000).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

J. E. Hastie, J.-M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15,894-896 (2003).
[CrossRef]

Opt. Express (1)

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Figures (3)

Fig. 1.
Fig. 1.

Semiconductor disk laser with the cavity including two separate gain reflectors and two curved mirrors. RoC=Radius of Curvature, R=Reflectivity

Fig. 2.
Fig. 2.

Light output characteristics of dual-gain laser, single-gain lasers, and sum of the single-gain laser outputs versus total pump power.

Fig. 3.
Fig. 3.

Intensity profile and the Gaussian fit of the output beam of the two-gain laser at output power of 8 W.

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