Abstract

We analyse the properties of GaAs based quantum dot semiconductor lasers emitting near 1310 nm. The line-width enhancement factor is shown to depend strongly on device temperature, ranging from 1.5 at 20° C to 5 at 50° C. With optical feedback from a distant reflector, devices remained stable at 20° C but displayed a range of instabilities at 50° C, including irregular power drop–outs and periodic pulsations, before entering a chaotic regime. Such dynamical features are unique to quantum dot lasers – quantum well lasers are significantly more unstable under optical feedback making such a clear route to chaos difficult to observe.

©2006 Optical Society of America

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  1. M. Bayer and A. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.6Ga0.4As/GaAs self-assembled quantum dots,” Phys. Rev. B,  65, 041308 (2002).
    [Crossref]
  2. C.H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259 (1982).
    [Crossref]
  3. T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
    [Crossref]
  4. B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
    [Crossref]
  5. S.P. Hegarty, B. Corbett, J.G. McInerney, and G. Huyet, “Free-carrier effect on index change in 1.3 μm quantum-dot lasers,” Electron. Lett.,  95 (2005).
  6. C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
    [Crossref]
  7. D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
    [Crossref]
  8. D. O’Brien, S.P. Hegarty, G. Huyet, and A.V. Uskov, “Sensitivity of quantum dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072 (2004).
    [Crossref] [PubMed]
  9. J. Helms and K. Petermann, “A simple analytic expression for the stable operation range of laser diodes with optical feedback,” IEEE J. Quantum Electron. 26, 833 (1990).
    [Crossref]
  10. E.A. Viktorov, P. Mandel, I. O’Driscoll, O. Carroll, G. Huyet, J. Houlihan, and Y. Tanguy, “Low-frequency fluctuations in two-state quantum dot lasers,” Opt. Lett. 31, 2302 (2006).
    [Crossref] [PubMed]
  11. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
    [Crossref]
  12. B.W. Hakki and T.L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113 (1973).
    [Crossref]
  13. J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, “Measurement of linewidth enhancement factor of self- assembled quantum dot semiconductor lasers emitting at 1310 nm,” Electron. Lett. 40, 128 (2004).
    [Crossref]
  14. A. Olsson and C.L. Tang, “Coherent optical interference effects in external-cavity semiconductor lasers,” IEEE J. Quantum Electron.,  17, 1320 (1981).
    [Crossref]
  15. C. Risch and C. Voumard, “Self-pulsation in the output intensity and spectrum of GaAs-AlGaAs cw diode lasers coupled to a frequency-selective external optical cavity,” J. Appl. Phys.,  48, 2083–2085 (1977).
    [Crossref]
  16. G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
    [Crossref]

2006 (1)

2005 (2)

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

S.P. Hegarty, B. Corbett, J.G. McInerney, and G. Huyet, “Free-carrier effect on index change in 1.3 μm quantum-dot lasers,” Electron. Lett.,  95 (2005).

2004 (2)

J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, “Measurement of linewidth enhancement factor of self- assembled quantum dot semiconductor lasers emitting at 1310 nm,” Electron. Lett. 40, 128 (2004).
[Crossref]

D. O’Brien, S.P. Hegarty, G. Huyet, and A.V. Uskov, “Sensitivity of quantum dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072 (2004).
[Crossref] [PubMed]

2003 (2)

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

2002 (1)

M. Bayer and A. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.6Ga0.4As/GaAs self-assembled quantum dots,” Phys. Rev. B,  65, 041308 (2002).
[Crossref]

1999 (2)

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
[Crossref]

1997 (1)

G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
[Crossref]

1990 (1)

J. Helms and K. Petermann, “A simple analytic expression for the stable operation range of laser diodes with optical feedback,” IEEE J. Quantum Electron. 26, 833 (1990).
[Crossref]

1982 (1)

C.H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259 (1982).
[Crossref]

1981 (1)

A. Olsson and C.L. Tang, “Coherent optical interference effects in external-cavity semiconductor lasers,” IEEE J. Quantum Electron.,  17, 1320 (1981).
[Crossref]

1977 (1)

C. Risch and C. Voumard, “Self-pulsation in the output intensity and spectrum of GaAs-AlGaAs cw diode lasers coupled to a frequency-selective external optical cavity,” J. Appl. Phys.,  48, 2083–2085 (1977).
[Crossref]

1973 (1)

B.W. Hakki and T.L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113 (1973).
[Crossref]

Bayer, M.

M. Bayer and A. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.6Ga0.4As/GaAs self-assembled quantum dots,” Phys. Rev. B,  65, 041308 (2002).
[Crossref]

Bimberg, D.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

Bossart, D.J.

T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
[Crossref]

Carroll, O.

Chen, J.X.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Corbett, B.

S.P. Hegarty, B. Corbett, J.G. McInerney, and G. Huyet, “Free-carrier effect on index change in 1.3 μm quantum-dot lasers,” Electron. Lett.,  95 (2005).

J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, “Measurement of linewidth enhancement factor of self- assembled quantum dot semiconductor lasers emitting at 1310 nm,” Electron. Lett. 40, 128 (2004).
[Crossref]

Dagens, B.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

de Bruyn, B.

G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
[Crossref]

Fiore, A.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Forchel, A.

M. Bayer and A. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.6Ga0.4As/GaAs self-assembled quantum dots,” Phys. Rev. B,  65, 041308 (2002).
[Crossref]

Fuchs, B.

T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
[Crossref]

Fuchs, B. A.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

Giudici, M.

G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
[Crossref]

Hakki, B.W.

B.W. Hakki and T.L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113 (1973).
[Crossref]

Hegarty, S.P.

S.P. Hegarty, B. Corbett, J.G. McInerney, and G. Huyet, “Free-carrier effect on index change in 1.3 μm quantum-dot lasers,” Electron. Lett.,  95 (2005).

D. O’Brien, S.P. Hegarty, G. Huyet, and A.V. Uskov, “Sensitivity of quantum dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072 (2004).
[Crossref] [PubMed]

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
[Crossref]

Helms, J.

J. Helms and K. Petermann, “A simple analytic expression for the stable operation range of laser diodes with optical feedback,” IEEE J. Quantum Electron. 26, 833 (1990).
[Crossref]

Henry, C.H.

C.H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259 (1982).
[Crossref]

Hopfer, F.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Houlihan, J.

E.A. Viktorov, P. Mandel, I. O’Driscoll, O. Carroll, G. Huyet, J. Houlihan, and Y. Tanguy, “Low-frequency fluctuations in two-state quantum dot lasers,” Opt. Lett. 31, 2302 (2006).
[Crossref] [PubMed]

J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, “Measurement of linewidth enhancement factor of self- assembled quantum dot semiconductor lasers emitting at 1310 nm,” Electron. Lett. 40, 128 (2004).
[Crossref]

Huyet, G.

E.A. Viktorov, P. Mandel, I. O’Driscoll, O. Carroll, G. Huyet, J. Houlihan, and Y. Tanguy, “Low-frequency fluctuations in two-state quantum dot lasers,” Opt. Lett. 31, 2302 (2006).
[Crossref] [PubMed]

S.P. Hegarty, B. Corbett, J.G. McInerney, and G. Huyet, “Free-carrier effect on index change in 1.3 μm quantum-dot lasers,” Electron. Lett.,  95 (2005).

D. O’Brien, S.P. Hegarty, G. Huyet, and A.V. Uskov, “Sensitivity of quantum dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072 (2004).
[Crossref] [PubMed]

J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, “Measurement of linewidth enhancement factor of self- assembled quantum dot semiconductor lasers emitting at 1310 nm,” Electron. Lett. 40, 128 (2004).
[Crossref]

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
[Crossref]

Kaiander, I.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Kettler, T.

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

Kovsh, A.R.

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Laemmlin, M.

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

Landreau, J.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Le Gouezigou, O.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Ledentsov, N.N.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Lester, L. F.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

Li, H.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

Make, D.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Malloy, K. J.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

Malloy, K.J.

T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
[Crossref]

Mandel, P.

Markus, A.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Maximov, M.V.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

McInerney, J.G.

S.P. Hegarty, B. Corbett, J.G. McInerney, and G. Huyet, “Free-carrier effect on index change in 1.3 μm quantum-dot lasers,” Electron. Lett.,  95 (2005).

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
[Crossref]

Mikhrin, S.S.

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

Muszalski, J.

J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, “Measurement of linewidth enhancement factor of self- assembled quantum dot semiconductor lasers emitting at 1310 nm,” Electron. Lett. 40, 128 (2004).
[Crossref]

Newell, T. C.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

Newell, T.C.

T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
[Crossref]

O’Brien, D.

D. O’Brien, S.P. Hegarty, G. Huyet, and A.V. Uskov, “Sensitivity of quantum dot semiconductor lasers to optical feedback,” Opt. Lett. 29, 1072 (2004).
[Crossref] [PubMed]

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

O’Driscoll, I.

Olsson, A.

A. Olsson and C.L. Tang, “Coherent optical interference effects in external-cavity semiconductor lasers,” IEEE J. Quantum Electron.,  17, 1320 (1981).
[Crossref]

Paoli, T.L.

B.W. Hakki and T.L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113 (1973).
[Crossref]

Pease, E. A.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

Petermann, K.

J. Helms and K. Petermann, “A simple analytic expression for the stable operation range of laser diodes with optical feedback,” IEEE J. Quantum Electron. 26, 833 (1990).
[Crossref]

Provost, J.-G.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Ribbat, C.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Risch, C.

C. Risch and C. Voumard, “Self-pulsation in the output intensity and spectrum of GaAs-AlGaAs cw diode lasers coupled to a frequency-selective external optical cavity,” J. Appl. Phys.,  48, 2083–2085 (1977).
[Crossref]

Sellin, R.L.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Stintz, A.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
[Crossref]

Tang, C.L.

A. Olsson and C.L. Tang, “Coherent optical interference effects in external-cavity semiconductor lasers,” IEEE J. Quantum Electron.,  17, 1320 (1981).
[Crossref]

Tanguy, Y.

Thedrez, B.

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

Uskov, A.V.

Ustinov, V.M.

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

Viktorov, E.A.

Voumard, C.

C. Risch and C. Voumard, “Self-pulsation in the output intensity and spectrum of GaAs-AlGaAs cw diode lasers coupled to a frequency-selective external optical cavity,” J. Appl. Phys.,  48, 2083–2085 (1977).
[Crossref]

Zhukov, A.E.

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Appl. Phys. Lett. (1)

C. Ribbat, R.L. Sellin, I. Kaiander, F. Hopfer, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, and M.V. Maximov, “Complete suppression of filamentation and superior beam quality in quantum-dot lasers,” Appl. Phys. Lett. 82, 952 (2003).
[Crossref]

Electron. Lett. (4)

D. O’Brien, S.P. Hegarty, G. Huyet, J.G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V.M. Ustinov, A.E. Zhukov, S.S. Mikhrin, and A.R. Kovsh, “Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers,” Electron. Lett. 39, 1819 (2003).
[Crossref]

B. Dagens, A. Markus, J.X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, “Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot lasers,” Electron. Lett. 41, 323 (2005).
[Crossref]

S.P. Hegarty, B. Corbett, J.G. McInerney, and G. Huyet, “Free-carrier effect on index change in 1.3 μm quantum-dot lasers,” Electron. Lett.,  95 (2005).

J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, “Measurement of linewidth enhancement factor of self- assembled quantum dot semiconductor lasers emitting at 1310 nm,” Electron. Lett. 40, 128 (2004).
[Crossref]

Europhys. Lett. (1)

G. Huyet, S.P. Hegarty, M. Giudici, B. de Bruyn, and J.G. McInerney, “Statistical properties of the dynamics of semiconductor lasers with optical feedback,” Europhys. Lett. 40, 619 (1997).
[Crossref]

IEEE J. Quantum Electron. (3)

J. Helms and K. Petermann, “A simple analytic expression for the stable operation range of laser diodes with optical feedback,” IEEE J. Quantum Electron. 26, 833 (1990).
[Crossref]

A. Olsson and C.L. Tang, “Coherent optical interference effects in external-cavity semiconductor lasers,” IEEE J. Quantum Electron.,  17, 1320 (1981).
[Crossref]

C.H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18, 259 (1982).
[Crossref]

IEEE Photon. Technol. Lett. (2)

T.C. Newell, D.J. Bossart, A. Stintz, B. Fuchs, and K.J. Malloy, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (12), 1527–29 (1999).
[Crossref]

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24 μm InAs quantum-dot laser diodes,” IEEE Photon. Technol. Lett. 11, (8), 931–933 (1999).
[Crossref]

J. Appl. Phys. (2)

B.W. Hakki and T.L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers. II. Electronic gain,” J. Appl. Phys. 44, 4113 (1973).
[Crossref]

C. Risch and C. Voumard, “Self-pulsation in the output intensity and spectrum of GaAs-AlGaAs cw diode lasers coupled to a frequency-selective external optical cavity,” J. Appl. Phys.,  48, 2083–2085 (1977).
[Crossref]

Opt. Lett. (2)

Phys. Rev. B (1)

M. Bayer and A. Forchel, “Temperature dependence of the exciton homogeneous linewidth in In0.6Ga0.4As/GaAs self-assembled quantum dots,” Phys. Rev. B,  65, 041308 (2002).
[Crossref]

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Figures (6)

Fig. 1.
Fig. 1. Measurement of the α–factor at different operating temperatures. There is a sharp increase in the slope at 40° C, and the major part of the change from 2 to 5 occurs between 40° C and 50° C.

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Fig. 2.
Fig. 2. (a) Power spectrum for low feedback levels, fext = -13 dB, where a small peak at frequency ν1 is observed and (b) the corresponding time series with a noise–induced dropout event for a pump current of 190 mA at 50°C and an external cavity of 40 cm

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Fig. 3.
Fig. 3. (a) Periodic features observed in the power spectrum for fext = -11 dB and (b) the corresponding time series with periodic oscillations at the round-trip frequency for I=190 mA, L=40 cm and T=50°C

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Fig. 4.
Fig. 4. Hysteresis loop observed at a fixed feedback level fext =-11 dB for an operating temperature of 50°

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Fig. 5.
Fig. 5. (a) Power spectrum showing the appearance of higher harmonics and (b) time series for fext = -10 dB, both at a pump current of 190 mA, temperature of 50°C and 40 cm external cavity

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Fig. 6.
Fig. 6. (a) Power spectrum showing broadened peaks and (b) time series exhibiting chaotic behaviour for maximum current (190 mA) at 50°C, and feedback levels (fext = -5 dB) for an external cavity length of 40 cm

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Equations (1)

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f ext = R eff − R 2 1 − R 2

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