Abstract

Scatterometry takes advantage of the sensitivity exhibited by optical diffraction from periodic structures, and hence is an efficient technique for lithographic process monitoring. A feature region measurement algorithm has been developed to extract accurately and quickly the relevant constitutive parameters from diffraction data. It is a method for efficiently determining grating structure by seeking the reflectance at some angles contains more information about the structure of the surface relief profile than the reflectance at other angles in a library data match process. The number of measurements and size of signature matching library will be reduced in a great percentage by performing the feature region algorithm.

© 2006 Optical Society of America

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  1. C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
    [Crossref]
  2. C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
    [Crossref]
  3. M. Littau, C. J. Raymond, C Gould, and C. Gambill, “Novel implementations of scatterometry for lithography process control,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 506–516 (2002).
    [Crossref]
  4. J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
    [Crossref]
  5. W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
    [Crossref]
  6. H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
    [Crossref]
  7. J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
    [Crossref]
  8. E. M. Drege, J. A. Read, and D. M. Byrne, “Linearized inversion of scatterometric data to obtain surface profile information,” Opt. Eng. 41, 225–236 (2002).
    [Crossref]

2005 (1)

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

2004 (2)

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

2003 (2)

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

2002 (3)

J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
[Crossref]

E. M. Drege, J. A. Read, and D. M. Byrne, “Linearized inversion of scatterometric data to obtain surface profile information,” Opt. Eng. 41, 225–236 (2002).
[Crossref]

M. Littau, C. J. Raymond, C Gould, and C. Gambill, “Novel implementations of scatterometry for lithography process control,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 506–516 (2002).
[Crossref]

Byrne, D. M.

E. M. Drege, J. A. Read, and D. M. Byrne, “Linearized inversion of scatterometric data to obtain surface profile information,” Opt. Eng. 41, 225–236 (2002).
[Crossref]

Chang, Y. C.

J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
[Crossref]

Chen, J. H.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Cheng, C.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Chin, S. B.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Cho, H. K.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Chou, Y. J.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Chu, H.

J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
[Crossref]

Chu, H. Y.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

de Boef, A.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Drege, E. M.

E. M. Drege, J. A. Read, and D. M. Byrne, “Linearized inversion of scatterometric data to obtain surface profile information,” Opt. Eng. 41, 225–236 (2002).
[Crossref]

Dusa, M.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Gambill, C.

M. Littau, C. J. Raymond, C Gould, and C. Gambill, “Novel implementations of scatterometry for lithography process control,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 506–516 (2002).
[Crossref]

Gau, T. S.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Goo, D.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Gould, C

M. Littau, C. J. Raymond, C Gould, and C. Gambill, “Novel implementations of scatterometry for lithography process control,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 506–516 (2002).
[Crossref]

Han, W. S.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Heaton, J.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Hu, J.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Huang, H. T.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Hunter, A.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Johnson, K.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Ke, C. M

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Kim, J. A.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Kim, S. J.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Ko, C. H.

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

Ku, Y. C.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Ku, Y. S.

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

Lee, B. H.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Lee, S. J.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Li, G.

J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
[Crossref]

Lin, B. J.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Lin, C. H.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Lin, H. T.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Lin, J. Y.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Littau, M.

M. Littau, C. J. Raymond, C Gould, and C. Gambill, “Novel implementations of scatterometry for lithography process control,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 506–516 (2002).
[Crossref]

Littau, M. E.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Lu, S. H.

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

Miyagi, M.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Moon, J. T.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Oh, S. H.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Opsal, J.

J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
[Crossref]

Rabello, S.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Raghavendra, G.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Raymond, C. J.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

M. Littau, C. J. Raymond, C Gould, and C. Gambill, “Novel implementations of scatterometry for lithography process control,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 506–516 (2002).
[Crossref]

Read, J. A.

E. M. Drege, J. A. Read, and D. M. Byrne, “Linearized inversion of scatterometric data to obtain surface profile information,” Opt. Eng. 41, 225–236 (2002).
[Crossref]

Sezginer, A.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Shyu, D. M.

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

Singh, B.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Smith, N. P.

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

Sohn, C. J.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Stanke, F.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

van der Schaar, M.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Wang, S. C.

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

Wang, Y. H.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Webb, R. L.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Wen, Y.

J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
[Crossref]

Woo, S. G.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Yang, W.

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

Youn, B.

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

Yu, S. S.

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

Zimmerman, M.

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

Opt. Eng. (1)

E. M. Drege, J. A. Read, and D. M. Byrne, “Linearized inversion of scatterometric data to obtain surface profile information,” Opt. Eng. 41, 225–236 (2002).
[Crossref]

Proc. SPIE (5)

H. T. Huang, G. Raghavendra, A. Sezginer, K. Johnson, F. Stanke, M. Zimmerman, C. Cheng, M. Miyagi, and B. Singh, “Scatterometry-Based Overlay Metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE 5038126–137 (2003).
[Crossref]

J. Opsal, H. Chu, Y. Wen, Y. C. Chang, and G. Li, “Fundamental solution for real-time optical CD metrology,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 163–176 (2002).
[Crossref]

C. H. Ko, Y. S. Ku, N. P. Smith, D. M. Shyu, S. C. Wang, and S. H. Lu, “Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer,” in Metrology, Inspection, and Process Control for Micro-lithography XIX, R. M. Silver., ed., Proc. SPIE 5752, 987–966 (2005).
[Crossref]

C. M Ke, S. S. Yu, Y. H. Wang, Y. J. Chou, J. H. Chen, B. H. Lee, H. Y. Chu, H. T. Lin, T. S. Gau, C. H. Lin, Y. C. Ku, and B. J. Lin, “90 nm Lithography Process Characterization using ODP Scatterometry Technology,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE 5375, 597–604 (2004).
[Crossref]

M. Littau, C. J. Raymond, C Gould, and C. Gambill, “Novel implementations of scatterometry for lithography process control,” in Metrology, Inspection, and Process Control for Microlithography XVI, D. J. Herr, ed., Proc. SPIE 4689, 506–516 (2002).
[Crossref]

Proc. SPIE. (2)

J. A. Kim, S. J. Kim, S. B. Chin, S. H. Oh, D. Goo, S. J. Lee, S. G. Woo, H. K. Cho, W. S. Han, J. T. Moon, C. J. Raymond, M. E. Littau, B. Youn, and C. J. Sohn, “Successful application of angular scatterometry to process control in sub-100-nm DRAM device,” in Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver; ed., Proc. SPIE. 5375, 541–549 (2004).
[Crossref]

W. Yang, R. L. Webb, S. Rabello, J. Hu, J. Y. Lin, J. Heaton, M. Dusa, A. de Boef, M. van der Schaar, and A. Hunter, “A novel diffraction based spectroscopic method for overlay metrology,” in Metrology, Inspection, and Process Control for Microlithography XVII, D. J. Herr, ed., Proc. SPIE. 5038200–207 (2003).
[Crossref]

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Figures (7)

Fig. 1.
Fig. 1.

Overlay target schematic for angular scatterometry.

Fig. 2.
Fig. 2.

Angular sensitivity curves for several geometrical profile parameters: (a) critical dimension (c) sidewall angle (e) overlay. Angular sensitivity through partial derivatives of reflectance with respect to several profile parameters: (b) critical dimension (d) sidewall angle (f) overlay.

Fig. 3.
Fig. 3.

RMSE of each adjacent signature of (a) CD (b) SA (c) OL in 1 nm, 0.1° and 10 nm steps respectively.

Fig. 4.
Fig. 4.

feature region summarized curve, the feature region selection sequence is determined as 26°–29°, 40°–47°, 15°–19° etc according to their summarized score.

Fig. 5.
Fig. 5.

feature region(26°–29°) vs. full-range 3D RMSE map calculated from overlay 200 nm and 205 nm of varying CD (390–410 nm, 1 nm step) and SA (88.5°–91.5°, 0.25° step).

Fig. 6.
Fig. 6.

feature region(40°–47°) vs. full-range 3D RMSE map calculated from overlay 200 nm and 205 nm of varying CD (390–410 nm, 1 nm step) and SA (88.5°–91.5°, 0.25° step).

Fig. 7.
Fig. 7.

Flow chart of feature region library generation and multiparameter matching process.

Tables (2)

Tables Icon

Table 1. Grating structure details

Tables Icon

Table 2 Initial library generation details

Metrics