Abstract

A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buried-heterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 μm and a stripe width of 2 μm.

© 2006 Optical Society of America

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  1. M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
    [CrossRef]
  2. H. Wada and T. Kamijoh, "Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding," IEEE J. Quantum Electron. 8173-175 (1996).
  3. T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
    [CrossRef]
  4. T. Okamoto N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, "Optically pumped membrane BHDFB lasers for low-threshold and single-mode operation," IEEE J. Select. Topics in Quantum Electron. 91361- 1366 (2003).
    [CrossRef]
  5. T. Okamoto T. Yamazaki, S. Sakamoto, S. Tamura and S. Arai, "Low-threshold membrane BH-DFB laser arrays with precisely controlled wavelength over a wide range," IEEE Photon. Tech. Lett. 161242-1244 (2004).
    [CrossRef]
  6. S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
    [CrossRef]
  7. T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto and S. Arai, "Direct bonding of GaInAsP/InP membrane structure on SOI wafer," presented at the 18th Indium Phospide and Related Materials Conference, Princeton, USA, 7-11, May 2006.
  8. H. Park, A. W. Fang, S. Kodama and J. E. Bowers, "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Express 139460-9464 (2005).
    [CrossRef] [PubMed]

2005 (2)

S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
[CrossRef]

H. Park, A. W. Fang, S. Kodama and J. E. Bowers, "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Express 139460-9464 (2005).
[CrossRef] [PubMed]

2004 (1)

T. Okamoto T. Yamazaki, S. Sakamoto, S. Tamura and S. Arai, "Low-threshold membrane BH-DFB laser arrays with precisely controlled wavelength over a wide range," IEEE Photon. Tech. Lett. 161242-1244 (2004).
[CrossRef]

2003 (1)

T. Okamoto N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, "Optically pumped membrane BHDFB lasers for low-threshold and single-mode operation," IEEE J. Select. Topics in Quantum Electron. 91361- 1366 (2003).
[CrossRef]

2001 (1)

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
[CrossRef]

1996 (1)

H. Wada and T. Kamijoh, "Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding," IEEE J. Quantum Electron. 8173-175 (1996).

1988 (1)

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Acher, O.

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Arai, S.

S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
[CrossRef]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
[CrossRef]

Blondeau, R.

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Bowers, J. E.

Briliouet, F.

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Defour, M.

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Fang, A. W.

Kamijoh, T.

H. Wada and T. Kamijoh, "Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding," IEEE J. Quantum Electron. 8173-175 (1996).

Kodama, S.

Maurel, P.

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Nunoya, N.

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
[CrossRef]

Okamoto, T.

S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
[CrossRef]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
[CrossRef]

Omnes, F.

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Onodera, Y.

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
[CrossRef]

Park, H.

Razeghi, M.

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Sakamoto, S.

S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
[CrossRef]

Tamura, S.

S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
[CrossRef]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
[CrossRef]

Wada, H.

H. Wada and T. Kamijoh, "Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding," IEEE J. Quantum Electron. 8173-175 (1996).

Yamazaki, T.

S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
[CrossRef]

Appl. Phys. Lett. (1)

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno, "First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate," Appl. Phys. Lett. 532389-2390 (1988).
[CrossRef]

Electron. Lett. (1)

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, "Continuous wave operation of optically pumped membrane DFB laser," Electron. Lett. 371455-1457 (2001).
[CrossRef]

IEEE J. Quantum Electron. (1)

H. Wada and T. Kamijoh, "Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding," IEEE J. Quantum Electron. 8173-175 (1996).

IEEE J. Select. Topics in Quantum Electron. (2)

T. Okamoto N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, "Optically pumped membrane BHDFB lasers for low-threshold and single-mode operation," IEEE J. Select. Topics in Quantum Electron. 91361- 1366 (2003).
[CrossRef]

S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, "Multiple-wavelength membrane BH-DFB laser arrays," IEEE J. Select. Topics in Quantum Electron. 111174-1179 (2005).
[CrossRef]

IEEE Photon. Tech. Lett. (1)

T. Okamoto T. Yamazaki, S. Sakamoto, S. Tamura and S. Arai, "Low-threshold membrane BH-DFB laser arrays with precisely controlled wavelength over a wide range," IEEE Photon. Tech. Lett. 161242-1244 (2004).
[CrossRef]

Opt. Express (1)

Other (1)

T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto and S. Arai, "Direct bonding of GaInAsP/InP membrane structure on SOI wafer," presented at the 18th Indium Phospide and Related Materials Conference, Princeton, USA, 7-11, May 2006.

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Figures (4)

Fig. 1.
Fig. 1.

Illustration of membrane DFB laser on SOI substrate.

Fig. 2.
Fig. 2.

Cross-sectional SEM view of (a) DFB structure before bonding and (b) the bonding interface between GaInAsP membrane and SOI.

Fig. 3.
Fig. 3.

Light output against pump power.

Fig. 4.
Fig. 4.

Lasing spectrum of membrane DFB laser and simulated resonant spectra for 0th, 1st and 2nd order transverse modes.

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