Abstract

We report a high-power optically pumped semiconductor vertical external cavity surface emitting laser operating at 2-µm wavelength. The gain material consisted of 15 GaInSb quantum-wells placed within a threelambda GaSb cavity and grown on the top of an 18-pairs AlAsSb/GaSb Bragg reflector. For thermal management we have used a transparent diamond heat spreader bonded on the top of the structure. When cooled down to 5°C, the laser emitted up to 1 W of optical power in a nearly diffraction-limited Gaussian beam demonstrating the high potential of antimonide material for VECSEL fabrication.

© 2006 Optical Society of America

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
    [CrossRef]
  2. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
    [CrossRef]
  3. H. Lindberg, A. Larsson, M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30, 2260–2262 (2005).
    [CrossRef] [PubMed]
  4. L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
    [CrossRef]
  5. R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
    [CrossRef]
  6. S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.
  7. J.E. Hastie, S. Calvez, M.D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2005).
    [CrossRef] [PubMed]
  8. J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
    [CrossRef]
  9. H. Lindberg, M. Strassner, J. Bengtsson, A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
    [CrossRef]
  10. A.A. Nikitichev, A.I. Stepanov, “2-µm lasers for optical monitoring,” J. Opt. Technol. 66,718–723 (1999).
    [CrossRef]
  11. M. P. Mikhailova, A. N. Titkov, “Type II heterojunctions in the GaInAsSb/GaSb system,” Semicond. Sci. Technol. 9, 1279–1295 (1994).
    [CrossRef]
  12. A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
    [CrossRef]
  13. H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
    [CrossRef]
  14. T. Bleuel, M. Müller, A. Forchel, “2-µm GaInSb-AlGaAsSb distributed-feedback lasers,” Photon. Technol. Lett. 13, 553–555 (2001).
    [CrossRef]
  15. L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
    [CrossRef]
  16. L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Crystal Growth 268, 128–134 (2004).
    [CrossRef]

2006

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

2005

2004

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Crystal Growth 268, 128–134 (2004).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

H. Lindberg, M. Strassner, J. Bengtsson, A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[CrossRef]

2003

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
[CrossRef]

2002

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

2001

T. Bleuel, M. Müller, A. Forchel, “2-µm GaInSb-AlGaAsSb distributed-feedback lasers,” Photon. Technol. Lett. 13, 553–555 (2001).
[CrossRef]

1999

1998

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

1997

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

1996

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

1994

M. P. Mikhailova, A. N. Titkov, “Type II heterojunctions in the GaInAsSb/GaSb system,” Semicond. Sci. Technol. 9, 1279–1295 (1994).
[CrossRef]

A.,

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Albrecht, T.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Alibert, C.

L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
[CrossRef]

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Aschwanden, A.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

Baranov, A. N.

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Bedford, R.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Bengtsson, J.

H. Lindberg, M. Strassner, J. Bengtsson, A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[CrossRef]

Bleuel, T.

T. Bleuel, M. Müller, A. Forchel, “2-µm GaInSb-AlGaAsSb distributed-feedback lasers,” Photon. Technol. Lett. 13, 553–555 (2001).
[CrossRef]

Boissier, G.

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Brick, P.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Burns, D.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Calvez, S.

J.E. Hastie, S. Calvez, M.D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2005).
[CrossRef] [PubMed]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Cerutti, L.

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Crystal Growth 268, 128–134 (2004).
[CrossRef]

L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
[CrossRef]

Choi, H. K.

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

Connors, M.K.

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

Cuminal, Y.

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Dawson, M.D.

J.E. Hastie, S. Calvez, M.D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2005).
[CrossRef] [PubMed]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Fallahi, M.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Fan, L.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Forchel, A.

T. Bleuel, M. Müller, A. Forchel, “2-µm GaInSb-AlGaAsSb distributed-feedback lasers,” Photon. Technol. Lett. 13, 553–555 (2001).
[CrossRef]

Garnache, A.

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Crystal Growth 268, 128–134 (2004).
[CrossRef]

L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
[CrossRef]

Genty, F.

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Crystal Growth 268, 128–134 (2004).
[CrossRef]

L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
[CrossRef]

Gini, E.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

Hader, J.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Häring, R.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

Hastie, J.E.

Hopkins, J.-M.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Jeon, C. W.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Jouhti, T.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Joullié, A

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Kaneda, Y.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Keller, U.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

Koch, S.W.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Kuehnelt, M.

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Kunert, B.

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Laakso, A.

Larsson, A.

H. Lindberg, A. Larsson, M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30, 2260–2262 (2005).
[CrossRef] [PubMed]

H. Lindberg, M. Strassner, J. Bengtsson, A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[CrossRef]

Lazzari, J. L.

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Leinonen, T.

Lindberg, H.

H. Lindberg, A. Larsson, M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30, 2260–2262 (2005).
[CrossRef] [PubMed]

H. Lindberg, M. Strassner, J. Bengtsson, A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[CrossRef]

Luft, J.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Lutgen, S.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Lyytikäinen, J.

Manfra, M. J.

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

Mikhailova, M. P.

M. P. Mikhailova, A. N. Titkov, “Type II heterojunctions in the GaInAsSb/GaSb system,” Semicond. Sci. Technol. 9, 1279–1295 (1994).
[CrossRef]

Missaggia, L J.

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

Moloney, J.V.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Morier-Genoud, F.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

Müller, M.

T. Bleuel, M. Müller, A. Forchel, “2-µm GaInSb-AlGaAsSb distributed-feedback lasers,” Photon. Technol. Lett. 13, 553–555 (2001).
[CrossRef]

Murray, J.T.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Nicolas, J. C.

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Nikitichev, A.A.

Ouvrard, A.

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Crystal Growth 268, 128–134 (2004).
[CrossRef]

L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
[CrossRef]

Paschotta, R.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

Pessa, M.

J.E. Hastie, S. Calvez, M.D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2005).
[CrossRef] [PubMed]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Reill, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Reinhard, S.

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Smith, S. A.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

Späth, W.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

Steegmueller, U

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Stepanov, A.I.

Stolz, W.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Strassner, M.

H. Lindberg, A. Larsson, M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30, 2260–2262 (2005).
[CrossRef] [PubMed]

H. Lindberg, M. Strassner, J. Bengtsson, A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[CrossRef]

Titkov, A. N.

M. P. Mikhailova, A. N. Titkov, “Type II heterojunctions in the GaInAsSb/GaSb system,” Semicond. Sci. Technol. 9, 1279–1295 (1994).
[CrossRef]

Turner, G. W.

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

Volz, K.

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

Walpole, J. N.

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

Zakharian, A.R.

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Appl. Phys. Lett.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

L. Fan, M. Fallahi, J.T. Murray, R. Bedford, Y. Kaneda, A.R. Zakharian, J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, “Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers,” Appl. Phys. Lett. 88, 021105 (2006).
[CrossRef]

Electron. Lett.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 20–21 (2004).
[CrossRef]

IEEE Electron. Lett.

L. Cerutti, A. Garnache, F. Genty, A. Ouvrard, C. Alibert, “Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm,” IEEE Electron. Lett. 39, 290–291 (2003).
[CrossRef]

IEEE J. Quantum Electron.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, U. Keller, “High-power passively mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 38, 1268–1275 (2002).
[CrossRef]

IEEE Photon. Technol. Lett.

H. Lindberg, M. Strassner, J. Bengtsson, A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, A., “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[CrossRef]

H. K. Choi, J. N. Walpole, G. W. Turner, M.K. Connors, L J. Missaggia, M. J. Manfra, “GaInAsSb-AlGaAsSb tapered laser emitting at 2.05µm with 0.6W diffraction-limited power,” IEEE Photon. Technol. Lett. 10, 938–940 (1998).
[CrossRef]

J. Crystal Growth

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Crystal Growth 268, 128–134 (2004).
[CrossRef]

J. Opt. Technol.

Opt. Express

Opt. Lett.

Photon. Technol. Lett.

T. Bleuel, M. Müller, A. Forchel, “2-µm GaInSb-AlGaAsSb distributed-feedback lasers,” Photon. Technol. Lett. 13, 553–555 (2001).
[CrossRef]

Semicond. Sci. Technol.

M. P. Mikhailova, A. N. Titkov, “Type II heterojunctions in the GaInAsSb/GaSb system,” Semicond. Sci. Technol. 9, 1279–1295 (1994).
[CrossRef]

A. N. Baranov, Y. Cuminal, G. Boissier, J. C. Nicolas, J. L. Lazzari, C. Alibert, A Joullié, “Electroluminescence of GaInSb/GaSb strained single quantum well strctures grown by molecular beam epitaxy,” Semicond. Sci. Technol. 11, 1185–1188 (1996).
[CrossRef]

Other

S. Lutgen, M. Kuehnelt, U Steegmueller, P. Brick, T. Albrecht, W. Reill, J. Luft, B. Kunert, S. Reinhard, K. Volz, W. Stolz, “0.7 W CW output power from a green semiconductor disk laser,” in proceedings of CLEO/Europe 2005 (IEEE Lasers and Electro-Optics2005), CB7-6-THU.

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Figures (5)

Fig. 1.
Fig. 1.

Room-temperature reflectivity curve of the VECSEL structure.

Fig. 2.
Fig. 2.

Schematic representation of the VECSEL cavity. RoC: radius of curvature; OC: output coupler.

Fig. 3.
Fig. 3.

Output characteristics of the VECSEL for operation near room temperature. Inset: the spatial profile of the laser beam measured at 430 mm distance from the output coupler.

Fig. 4.
Fig. 4.

Light output characteristics of the VECSEL for different temperatures of the mount. The output coupler was 2%. Inset: the dependence between the threshold pump power and the mount temperature.

Fig. 5.
Fig. 5.

Typical spectra of the VECSEL with 1% output coupler. The output power was ~480mW.

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