Abstract

We demonstrate the optical heterodyne diagnostics and high saturation power characteristics of a novel undoped InP sandwiched In0.53Ga0.47As p-i-n photodiode with a partially p-doped photoabsorption layer, which is grown on a linearly graded metamorphic InxGa1-xP buffered GaAs substrate layer and exhibits an excellent low dark current density of 3.6×10-7 A/cm2. Such a top-illuminated optical receiver exhibits an illuminating window of 60-µm diameter, which performs ultra-linear power handling capability up to 18 dBm at 1550 nm, providing a maximum photocurrent of 35 mA under a reverse bias of 9 volts. These result in extremely high current bandwidth and bandwidth-responsivity products of 350 mA∙GHz and 4.8 GHz∙A/W, respectively, at receiving frequency of up to 10 GHz.

© 2006 Optical Society of America

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  1. H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
    [CrossRef]
  2. S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
    [CrossRef]
  3. X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
    [CrossRef]
  4. V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
    [CrossRef]
  5. M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).
  6. M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
    [CrossRef]
  7. M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
    [CrossRef]
  8. K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, "Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy," J. Cryst. Growth 251, 852-857, (2003).
    [CrossRef]
  9. J.-H. Jang, G. Cueva, W. E. Hoke, P. J. Lemonias, P. Fay, and I. Adesida, "Metamorphic Graded Bandgap InGaAs-InGaAlAs-InAlAs Double Heterojunction P-i-I-N Photodiodes," J. Lightwave Technol. 20, 507-514, (2002).
    [CrossRef]
  10. C.-K. Lin, H.-C. Kuo, M. Feng, G.-R. Lin, "Ultralow Leakage In0.53Ga0.47As p-i-n Photodetector Grown on Linearly Graded Metamorphic InxGa1-xP Buffered GaAs Substrate," IEEE J. Quantum Electron. 41, 749-752, (2005).
    [CrossRef]
  11. K. J. Williams and R. D. Esman, "Large-signal Compression-current Measurements in High-power Microwave pin Photodiodes," Electron. Lett.,  35, 82-84, (1999).
    [CrossRef]
  12. Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
    [CrossRef]
  13. F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
    [CrossRef]
  14. S. Kawanishi, M. Saruwatari,"A very wide-band frequency response measurement system using optical heterodyne detection," IEEE Trans. Instrum. Meas. 38, 569 - 573, (1989).
    [CrossRef]
  15. Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
    [CrossRef]
  16. G.-R. Lin, I.-H. Chiu, and M.-C. Wu, "1.2-ps mode-locked semiconductor optical amplifier fiber laser pulses generated by 60-ps backward dark-optical comb injection and soliton compression," Opt. Express 13, 1008-1014, (2005).
    [CrossRef] [PubMed]

2005 (3)

C.-K. Lin, H.-C. Kuo, M. Feng, G.-R. Lin, "Ultralow Leakage In0.53Ga0.47As p-i-n Photodetector Grown on Linearly Graded Metamorphic InxGa1-xP Buffered GaAs Substrate," IEEE J. Quantum Electron. 41, 749-752, (2005).
[CrossRef]

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

G.-R. Lin, I.-H. Chiu, and M.-C. Wu, "1.2-ps mode-locked semiconductor optical amplifier fiber laser pulses generated by 60-ps backward dark-optical comb injection and soliton compression," Opt. Express 13, 1008-1014, (2005).
[CrossRef] [PubMed]

2004 (4)

Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
[CrossRef]

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

2003 (3)

K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, "Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy," J. Cryst. Growth 251, 852-857, (2003).
[CrossRef]

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

2002 (1)

2001 (1)

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

1999 (1)

K. J. Williams and R. D. Esman, "Large-signal Compression-current Measurements in High-power Microwave pin Photodiodes," Electron. Lett.,  35, 82-84, (1999).
[CrossRef]

1996 (1)

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

1994 (1)

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

1989 (1)

S. Kawanishi, M. Saruwatari,"A very wide-band frequency response measurement system using optical heterodyne detection," IEEE Trans. Instrum. Meas. 38, 569 - 573, (1989).
[CrossRef]

Adesida, I.

Alferov, Zh. I.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Anselm, A.

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Ardouin, M.

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

Averett, K. L.

K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, "Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy," J. Cryst. Growth 251, 852-857, (2003).
[CrossRef]

Benz, W.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Böhm, G.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Bollaert, S.

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

Bonte, B.

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

Bronner, W.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Campbell, J. C.

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Chan, Y.-J.

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

Chertouk, M.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Chiu, I.-H.

Cordier, Y.

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

Cueva, G.

Dahlström, M.

Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
[CrossRef]

Dammann, M.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Demiguel, S.

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Esman, R. D.

K. J. Williams and R. D. Esman, "Large-signal Compression-current Measurements in High-power Microwave pin Photodiodes," Electron. Lett.,  35, 82-84, (1999).
[CrossRef]

Fay, P.

Feng, M.

C.-K. Lin, H.-C. Kuo, M. Feng, G.-R. Lin, "Ultralow Leakage In0.53Ga0.47As p-i-n Photodetector Grown on Linearly Graded Metamorphic InxGa1-xP Buffered GaAs Substrate," IEEE J. Quantum Electron. 41, 749-752, (2005).
[CrossRef]

Forrest, S. R.

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

Furuta, T.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

Gladyshev, A. G.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Gokhale, M. R.

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

Gossard, A. C.

Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
[CrossRef]

Griffith, Z.

Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
[CrossRef]

Heiss, H.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Hoke, W. E.

Huang, F.-H.

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

Huang, Y.-L.

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

Hurm, V.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Ishibashi, T.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

Ito, H.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

Jagadish, C.

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

Jakobus, T.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Jang, J.-H.

Kaufel, G.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Kawanishi, S.

S. Kawanishi, M. Saruwatari,"A very wide-band frequency response measurement system using optical heterodyne detection," IEEE Trans. Instrum. Meas. 38, 569 - 573, (1989).
[CrossRef]

Kim, J.

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Kim, Y.-M.

Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
[CrossRef]

Klein, W.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Koch, M. W.

K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, "Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy," J. Cryst. Growth 251, 852-857, (2003).
[CrossRef]

Kodama, S.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

Kohler, K.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Kovsh, A. R.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Kraus, S.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Kryzhanovskaya, N. V.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Kuo, H.-C.

C.-K. Lin, H.-C. Kuo, M. Feng, G.-R. Lin, "Ultralow Leakage In0.53Ga0.47As p-i-n Photodetector Grown on Linearly Graded Metamorphic InxGa1-xP Buffered GaAs Substrate," IEEE J. Quantum Electron. 41, 749-752, (2005).
[CrossRef]

Lao, Z.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Ledentsov, N. N.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Lemonias, P. J.

Li, N.

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Li, X.

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Lin, C.-K.

C.-K. Lin, H.-C. Kuo, M. Feng, G.-R. Lin, "Ultralow Leakage In0.53Ga0.47As p-i-n Photodetector Grown on Linearly Graded Metamorphic InxGa1-xP Buffered GaAs Substrate," IEEE J. Quantum Electron. 41, 749-752, (2005).
[CrossRef]

Lin, G.-R.

G.-R. Lin, I.-H. Chiu, and M.-C. Wu, "1.2-ps mode-locked semiconductor optical amplifier fiber laser pulses generated by 60-ps backward dark-optical comb injection and soliton compression," Opt. Express 13, 1008-1014, (2005).
[CrossRef] [PubMed]

C.-K. Lin, H.-C. Kuo, M. Feng, G.-R. Lin, "Ultralow Leakage In0.53Ga0.47As p-i-n Photodetector Grown on Linearly Graded Metamorphic InxGa1-xP Buffered GaAs Substrate," IEEE J. Quantum Electron. 41, 749-752, (2005).
[CrossRef]

Lin, W.

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

Lu, H.

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Ludwig, M.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Maksimov, M. V.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Maleev, N. A.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Mikhrin, S. S.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Muramoto, Y.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

Musikhin, Yu. G.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Nagatsuma, T.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

Nikitina, E. V.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Raynor, B.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Rodwell, M. J. W.

Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
[CrossRef]

Rosenzweig, J.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Saruwatari, M.

S. Kawanishi, M. Saruwatari,"A very wide-band frequency response measurement system using optical heterodyne detection," IEEE Trans. Instrum. Meas. 38, 569 - 573, (1989).
[CrossRef]

Schlechtweg, M.

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

Semenova, E. S.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Shernyakov, Yu. M.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Shi, J.-W.

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

Studenkov, P. V.

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

Tan, H. H.

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

Théron, D.

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

Thomson, J. K.

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

Tränkle, G.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Ustinov, V. M.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Vasil’ev, A. P.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Wei, J.

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

Weimann, G.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Wicks, G. W.

K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, "Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy," J. Cryst. Growth 251, 852-857, (2003).
[CrossRef]

Williams, K. J.

K. J. Williams and R. D. Esman, "Large-signal Compression-current Measurements in High-power Microwave pin Photodiodes," Electron. Lett.,  35, 82-84, (1999).
[CrossRef]

Wu, J.-Y.

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

Wu, M.-C.

Wu, X.

K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, "Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy," J. Cryst. Growth 251, 852-857, (2003).
[CrossRef]

Wu, Y.-S.

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

Xia, F.

F. Xia, J. K. Thomson, M. R. Gokhale, P. V. Studenkov, J. Wei, W. Lin, and S. R. Forrest, "A asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler," IEEE Photon. Technol. Lett., vol.  13, no. 8, pp. 845-847, Aug. 2001.
[CrossRef]

Xu, D.

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

Xuan, R.

Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, "High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength," IEEE Photon. Technol. Lett. 17, 878-880, (2005).
[CrossRef]

Zaknoune, M.

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

Zheng, X.

X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, "A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions," IEEE Photon. Technol. Lett. 16, 2326-2328, (2004).
[CrossRef]

S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, "Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications," IEEE Photon. Technol. Lett. 15,1761-1763, (2003).
[CrossRef]

Zhukov, A. E.

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov, "High-power 1.5μm InAs-InGaAs quantum dot lasers on GaAs substrates," Semiconductors 38, 732-735, (2004).
[CrossRef]

Electron. Lett. (3)

V. Hurm, W. Benz, W. Bronner, M. Dammann, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, "10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs," Electron. Lett. 33, 1653-1654, (1994).
[CrossRef]

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D. Théron, "60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs," Electron. Lett. 36, 741-742, (2003).

K. J. Williams and R. D. Esman, "Large-signal Compression-current Measurements in High-power Microwave pin Photodiodes," Electron. Lett.,  35, 82-84, (1999).
[CrossRef]

IEEE Electron. Device Lett. (1)

M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with a novel composite channels design," IEEE Electron. Device Lett. 17, 273-275, (1996).
[CrossRef]

IEEE Electron. Lett. (1)

Z. Griffith, Y.-M. Kim, M. Dahlström, A. C. Gossard, and M. J. W. Rodwell, "InGaAs-InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ft, fmax > 268 GHz," IEEE Electron. Lett. 25, 675-677, (2004).
[CrossRef]

IEEE J. Quantum Electron. (1)

C.-K. Lin, H.-C. Kuo, M. Feng, G.-R. Lin, "Ultralow Leakage In0.53Ga0.47As p-i-n Photodetector Grown on Linearly Graded Metamorphic InxGa1-xP Buffered GaAs Substrate," IEEE J. Quantum Electron. 41, 749-752, (2005).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, T. Ishibashi, "High-Speed and High-Output InP-InGaAs Unitraveling-Carrier Photodiodes," IEEE J. Sel. Top. Quantum Electron. 10, 709-727, (2004).
[CrossRef]

IEEE Photon. Technol. Lett. (4)

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Figures (9)

Fig. 1.
Fig. 1.

Configuration of the InGaAs MM-PINPD on semi-insulating GaAs substrate.

Fig. 2.
Fig. 2.

Top-view photograph of the InGaAs MM-PINPD

Fig. 3.
Fig. 3.

Setup of the heterodyne beating measurement for the coplanar guard-ring typed InGaAs PINPD. PC: polarization controller, Opt. Att.: optical attenuator, TLS: tunable laser source, OSA: optical spectrum analyzer.

Fig. 4.
Fig. 4.

Photocurrent of MM-PINPD at (a) 0 dBm, (b) -20 dBm, (c) -40 dBm, (d) -60 dBm, and (e) -80 dBm

Fig. 5.
Fig. 5.

Dark current versus biased voltage from 0.1 V to -18 V for MM-PINPD

Fig. 6.
Fig. 6.

Band diagram of the MM-PINPD at reversed bias 5 V.

Fig. 7.
Fig. 7.

Frequency responses at reverse biases of -1V, -3V, and -5V. The FFT response obtained from impulse method is shown for comparison. The inset shows the illumination power dependent 3-dB frequency response as a function of photocurrent.

Fig. 8.
Fig. 8.

RF power versus photocurrent under the reversed bias of 1, 3, 5 V at a operating frequency of 10 GHz.

Fig. 9.
Fig. 9.

The dc saturation characteristic of the MMPINPD.

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