Abstract

We demonstrate, for the first time, an all-optoelectronic continuous-wave terahertz photomixing system that uses low-temperature grown InGaAs devices both for emitters and coherent homodyne detectors. The system is compatible with fiber-optic excitation wavelengths, and we compare the performance to the more common LT-GaAs photomixers.

© 2005 Optical Society of America

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References

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  1. Y. C. Shen, P. C. Upadhya,, A. G. Davies, I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, and E. H. Linfield, �??Generation and detection of ultrabroadband terahertz radiation using photoconductive emitters and receivers,�?? Appl. Phys. Lett. 85, 164-166 (2004)
    [CrossRef]
  2. E. R. Brown, K. A. McIntosh, F. W. Smith, K. B. Nichols, M. J. Manfra, C. L. Dennis, and J. P. Mattia, �??Milliwatt output levels an superquadratic bias dependence in a low-temperature-grown GaAs photomixer,�?? Appl. Phys. Lett. 64, 3311-3313 (1994)
    [CrossRef]
  3. S. Verghese, K. A. McIntosh, S. Calawa, W. F. Dinatele, E. K. Duerr, and K. A. Molvar, �??Generation and detection of coherent terahertz waves using two photomixers,�?? Appl. Phys. Lett. 73, 3824-3826 (1998)
    [CrossRef]
  4. I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, E. H. Linfield, A. G. Davies, and M. Missous, �??High resistivity annealed low-temperature GaAs with 100 fs lifetimes,�?? Appl. Phys. Lett. 83, 4199-5201 (2003)
    [CrossRef]
  5. M. Tani, K. -S. Lee, and X. -C. Zhang, �??Detection of terahertz radiation with low-temperature-grown GaAsbased photoconductive antenna using 1.55 µm probe,�?? Appl. Phys. Lett. 77, 1396-1398 (2000)
    [CrossRef]
  6. C. Baker, I. S. Gregory, W. R. Tribe, I. V. Bradley, M. J. Evans, E. H. Linfield, and M. Missous, �??Highly resistive annealed low-temperature-grown InGaAs with sub-500 fs carrier lifetimes,�?? Appl. Phys. Lett. 85, 4965-4967 (2004)
    [CrossRef]
  7. C. Baker, I. S. Gregory, W. R. Tribe, I. V. Bradley, M. J. Evans, M. Withers, P. F. Taday, V. P. Wallace, E. H. Linfield, A. G. Davies, and M. Missous, �??Terahertz pulsed imaging with 1.06 µm laser excitation,�?? Appl. Phys. Lett. 83, 4113-4115 (2003)
    [CrossRef]
  8. S. Gupta, J. F. Whitaker, and G. A. Mourou, �??Ultrafast carrier dynamics in III-V semiconductors grown by molecular beam epitaxy at very low substrate temperatures,�?? IEEE J. of Quantum. Electron. 28, 2464-2472 (1992)
    [CrossRef]
  9. R. Takahashi, Y. Kawamura, T, Kagawa, and H. Iwamura, �??Ultrafast 1.55- µm photoresponses in lowtemperature-grown InGaAs/InAlAs quantum wells,�?? Appl. Phys. Lett. 65, 1790-1792 (1994)
    [CrossRef]
  10. I. S. Gregory, W. R. Tribe, B. E. Cole, C. Baker, M. J. Evans, I. V. Bradley, E. H. Linfield, A. G. Davies, and M. Missous, �??Phase sensitive continuous-wave THz imaging using diode lasers,�?? Electron. Lett. 40, 143-145 (2004)
    [CrossRef]
  11. K. A. McIntosh, E. R. Brown, K. B. Nichols, O. B. McMahon, W. F. DiNatele, and T. M. Lyszczarz, �??Terahertz photomixing with diode lasers in low-temperature-grown GaAs,�?? Appl. Phys. Lett. 67, 3844-3846 (1995)
    [CrossRef]
  12. J. E. Bjarnason, T. L. J Chan, A. W. M. Lee, E. R. Brown, D. C. Driscoll, M. Hanson, A. C. Gossard, and R. E. Muller, �??ErAs : GaAs photomixer with two-decade tunability and 12 µW peak output power,�?? Appl. Phys. Lett. 85, 3983-3985 (2004)
    [CrossRef]
  13. M. Sukhotin, E. R. Brown, A. C. Gossard, D. Driscoll, M. Hanson, P. Maker, and R. Muller, �??Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 µm,�?? Appl. Phys. Lett. 82, 3116-3118 (2003)
    [CrossRef]
  14. J. Mangeney, L. Joulaud, J. Decobert, J. -M. Lourtioz, J. L. Perrossier, S. Cabaret, and P. Crozat, �??Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime,�?? Electron. Lett. 39, 681-682 (2003)
    [CrossRef]
  15. M. Sukhotin, E. R. Brown, D. Driscoll, M. Hanson, and A. C. Gossard, �??Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 µm,�?? Appl. Phys. Lett. 83, 3921-3923 (2003)
    [CrossRef]
  16. E. R. Brown, �??A photoconductive model for superior GaAs THz photomixers,�?? Appl. Phys. Lett. 75, 769-771 (1999)
    [CrossRef]

Appl. Phys. Lett. (13)

Y. C. Shen, P. C. Upadhya,, A. G. Davies, I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, and E. H. Linfield, �??Generation and detection of ultrabroadband terahertz radiation using photoconductive emitters and receivers,�?? Appl. Phys. Lett. 85, 164-166 (2004)
[CrossRef]

E. R. Brown, K. A. McIntosh, F. W. Smith, K. B. Nichols, M. J. Manfra, C. L. Dennis, and J. P. Mattia, �??Milliwatt output levels an superquadratic bias dependence in a low-temperature-grown GaAs photomixer,�?? Appl. Phys. Lett. 64, 3311-3313 (1994)
[CrossRef]

S. Verghese, K. A. McIntosh, S. Calawa, W. F. Dinatele, E. K. Duerr, and K. A. Molvar, �??Generation and detection of coherent terahertz waves using two photomixers,�?? Appl. Phys. Lett. 73, 3824-3826 (1998)
[CrossRef]

I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, E. H. Linfield, A. G. Davies, and M. Missous, �??High resistivity annealed low-temperature GaAs with 100 fs lifetimes,�?? Appl. Phys. Lett. 83, 4199-5201 (2003)
[CrossRef]

M. Tani, K. -S. Lee, and X. -C. Zhang, �??Detection of terahertz radiation with low-temperature-grown GaAsbased photoconductive antenna using 1.55 µm probe,�?? Appl. Phys. Lett. 77, 1396-1398 (2000)
[CrossRef]

C. Baker, I. S. Gregory, W. R. Tribe, I. V. Bradley, M. J. Evans, E. H. Linfield, and M. Missous, �??Highly resistive annealed low-temperature-grown InGaAs with sub-500 fs carrier lifetimes,�?? Appl. Phys. Lett. 85, 4965-4967 (2004)
[CrossRef]

C. Baker, I. S. Gregory, W. R. Tribe, I. V. Bradley, M. J. Evans, M. Withers, P. F. Taday, V. P. Wallace, E. H. Linfield, A. G. Davies, and M. Missous, �??Terahertz pulsed imaging with 1.06 µm laser excitation,�?? Appl. Phys. Lett. 83, 4113-4115 (2003)
[CrossRef]

K. A. McIntosh, E. R. Brown, K. B. Nichols, O. B. McMahon, W. F. DiNatele, and T. M. Lyszczarz, �??Terahertz photomixing with diode lasers in low-temperature-grown GaAs,�?? Appl. Phys. Lett. 67, 3844-3846 (1995)
[CrossRef]

J. E. Bjarnason, T. L. J Chan, A. W. M. Lee, E. R. Brown, D. C. Driscoll, M. Hanson, A. C. Gossard, and R. E. Muller, �??ErAs : GaAs photomixer with two-decade tunability and 12 µW peak output power,�?? Appl. Phys. Lett. 85, 3983-3985 (2004)
[CrossRef]

M. Sukhotin, E. R. Brown, A. C. Gossard, D. Driscoll, M. Hanson, P. Maker, and R. Muller, �??Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 µm,�?? Appl. Phys. Lett. 82, 3116-3118 (2003)
[CrossRef]

R. Takahashi, Y. Kawamura, T, Kagawa, and H. Iwamura, �??Ultrafast 1.55- µm photoresponses in lowtemperature-grown InGaAs/InAlAs quantum wells,�?? Appl. Phys. Lett. 65, 1790-1792 (1994)
[CrossRef]

M. Sukhotin, E. R. Brown, D. Driscoll, M. Hanson, and A. C. Gossard, �??Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 µm,�?? Appl. Phys. Lett. 83, 3921-3923 (2003)
[CrossRef]

E. R. Brown, �??A photoconductive model for superior GaAs THz photomixers,�?? Appl. Phys. Lett. 75, 769-771 (1999)
[CrossRef]

Electron. Lett. (2)

I. S. Gregory, W. R. Tribe, B. E. Cole, C. Baker, M. J. Evans, I. V. Bradley, E. H. Linfield, A. G. Davies, and M. Missous, �??Phase sensitive continuous-wave THz imaging using diode lasers,�?? Electron. Lett. 40, 143-145 (2004)
[CrossRef]

J. Mangeney, L. Joulaud, J. Decobert, J. -M. Lourtioz, J. L. Perrossier, S. Cabaret, and P. Crozat, �??Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime,�?? Electron. Lett. 39, 681-682 (2003)
[CrossRef]

IEEE J. of Quantum. Electron. (1)

S. Gupta, J. F. Whitaker, and G. A. Mourou, �??Ultrafast carrier dynamics in III-V semiconductors grown by molecular beam epitaxy at very low substrate temperatures,�?? IEEE J. of Quantum. Electron. 28, 2464-2472 (1992)
[CrossRef]

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Figures (3)

Fig. 1.
Fig. 1.

Schematic diagram showing the cw-THz apparatus with the combining beamsplitter, optical delay line, and THz photomixers. The inset on the left shows the spiral antenna, and to the right, the interdigitated fingers located at the central feed of the spiral.

Fig. 2.
Fig. 2.

THz power as a function of applied bias for an all LT-InGaAs cw-photomixer system. Shown in the insets are an interferogram (top left) and normalized Fourier transform (bottom right) for an applied bias of 7 V.

Fig. 3.
Fig. 3.

Plots of the roll-off in photomixer emitted power (measured using a bolometer) as a function of frequency for LT-GaAs and LT-InGaAs.

Tables (1)

Tables Icon

Table 1. Comparison of the carrier lifetime (τ), and illuminated device resistance (Rdevice), along with the current (I), bias (V), and dissipated electrical power (P), for both LT-GaAs and LT-InGaAs emitters shown in Fig. 3.

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