Abstract

A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW.

©2005 Optical Society of America

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References

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  1. G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).
  2. A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
    [Crossref] [PubMed]
  3. B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
    [Crossref]
  4. H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
    [Crossref] [PubMed]
  5. O. Boyraz and B. Jalali , “ Demonstration of a silicon Raman laser ,” Opt. Express   12 , 5269 – 5273 ( 2004 ).
    [Crossref] [PubMed]
  6. B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
    [Crossref]
  7. A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
    [Crossref]
  8. G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
    [Crossref] [PubMed]
  9. W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
    [Crossref] [PubMed]
  10. G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
    [Crossref]
  11. H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
    [Crossref]
  12. M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
    [Crossref]
  13. A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
    [Crossref]
  14. D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
    [Crossref]

2005 (1)

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

2004 (2)

O. Boyraz and B. Jalali , “ Demonstration of a silicon Raman laser ,” Opt. Express   12 , 5269 – 5273 ( 2004 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

2003 (1)

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

2002 (1)

D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
[Crossref]

2001 (1)

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

2000 (3)

B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
[Crossref]

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

1998 (1)

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

1997 (1)

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

1996 (1)

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
[Crossref]

1988 (1)

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Abraham, P.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Acher, O.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Black, K. A.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Blondeau, R.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Bowers, J. E.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Boyraz, O.

Brillouet, F.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

C-Fan, J. C.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Chiu, Y. J.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Coffa, S.

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Cohen, O.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Coppinger, F.

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Defour, M.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Dehlinger, G.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Diehl, L.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Ensslin, K.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Faist, J.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Fallica, P.G.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Fang, A.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

Franzo, G.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Franzò, G.

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Gelloz, B.

B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
[Crossref]

Gennser, U.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Grützmacher, D.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Gwilliam, R. M.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Hak, D.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

Hjort, K.

D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
[Crossref]

Homewood, K. P.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Iacona, F.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Irrera, A.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Jalali, B.

O. Boyraz and B. Jalali , “ Demonstration of a silicon Raman laser ,” Opt. Express   12 , 5269 – 5273 ( 2004 ).
[Crossref] [PubMed]

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Jones, R.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Kamijoh, T.

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
[Crossref]

Karim, A.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Knights, A. P.

G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).

Koshida, N.

B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
[Crossref]

Ledain, S.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Liao, L.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Liu, A.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Lofgreen, D.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Lorenco, M. A.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Maurel, P.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Miritello, M.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Müller, E.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Ng, W. L.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Nicolaescu, R.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Omnes, F.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Pacifici, D.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Paniccia, M.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Pasquariello, D.

D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
[Crossref]

Piprek, J.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Priolo, F.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Razeghi, M.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Reed, G.T.

G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).

Rendina, I.

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Rong, H.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

Rubin, D.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Salerno, J.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Samara-Rubio, D.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Sanfilippo, D.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Shao, G.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Sigg, H.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Spinella, C.

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Stefano, G.Di

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Wada, H.

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
[Crossref]

Yegnanarayanan, S.

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Yoon, T.

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Yoshimoto, T.

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Appl. Phys. Lett. (1)

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
[Crossref]

IEEE J. Sel. Topics Quantum Electron. (1)

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

IEEE Photon. Technol. Lett. (2)

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
[Crossref]

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

J. Appl. Phys. (2)

B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
[Crossref]

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Nature (3)

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Opt. Express (1)

Physica E (1)

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Science (1)

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Other (1)

G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).

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Figures (5)

Fig. 1.
Fig. 1. Cross-section device structure of an SOI rib waveguide bonded to a III-V active region epitaxial structure.

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Fig. 2.
Fig. 2. SEM cross section of the fabricated device before HR coating.

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Fig. 3.
Fig. 3. (a) Calculated TE fundamental mode profile (b) TE near field image of lasing optical mode.

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Fig. 4.
Fig. 4. Single-sided fiber-coupled output power of the silicon evanescent laser as a function of pump power for several temperatures.

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Fig. 5.
Fig. 5. Spectrum of the silicon evanescent laser operating at 1538 nm. The spectrum is measured at 1.4 times the threshold power at 12 °C with 0.1 nm resolution.

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