Abstract

A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW.

© 2005 Optical Society of America

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  1. G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).
  2. A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
    [Crossref] [PubMed]
  3. B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
    [Crossref]
  4. H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
    [Crossref] [PubMed]
  5. O. Boyraz and B. Jalali , “ Demonstration of a silicon Raman laser ,” Opt. Express   12 , 5269 – 5273 ( 2004 ).
    [Crossref] [PubMed]
  6. B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
    [Crossref]
  7. A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
    [Crossref]
  8. G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
    [Crossref] [PubMed]
  9. W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
    [Crossref] [PubMed]
  10. G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
    [Crossref]
  11. H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
    [Crossref]
  12. M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
    [Crossref]
  13. A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
    [Crossref]
  14. D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
    [Crossref]

2005 (1)

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

2004 (2)

O. Boyraz and B. Jalali , “ Demonstration of a silicon Raman laser ,” Opt. Express   12 , 5269 – 5273 ( 2004 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

2003 (1)

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

2002 (1)

D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
[Crossref]

2001 (1)

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

2000 (3)

B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
[Crossref]

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

1998 (1)

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

1997 (1)

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

1996 (1)

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
[Crossref]

1988 (1)

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Abraham, P.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Acher, O.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Black, K. A.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Blondeau, R.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Bowers, J. E.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Boyraz, O.

Brillouet, F.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

C-Fan, J. C.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Chiu, Y. J.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Coffa, S.

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Cohen, O.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Coppinger, F.

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Defour, M.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Dehlinger, G.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Diehl, L.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Ensslin, K.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Faist, J.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Fallica, P.G.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Fang, A.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

Franzo, G.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Franzò, G.

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Gelloz, B.

B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
[Crossref]

Gennser, U.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Grützmacher, D.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Gwilliam, R. M.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Hak, D.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

Hjort, K.

D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
[Crossref]

Homewood, K. P.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Iacona, F.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Irrera, A.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Jalali, B.

O. Boyraz and B. Jalali , “ Demonstration of a silicon Raman laser ,” Opt. Express   12 , 5269 – 5273 ( 2004 ).
[Crossref] [PubMed]

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Jones, R.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Kamijoh, T.

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
[Crossref]

Karim, A.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Knights, A. P.

G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).

Koshida, N.

B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
[Crossref]

Ledain, S.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Liao, L.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Liu, A.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Lofgreen, D.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Lorenco, M. A.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Maurel, P.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Miritello, M.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Müller, E.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Ng, W. L.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Nicolaescu, R.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Omnes, F.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Pacifici, D.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Paniccia, M.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Pasquariello, D.

D. Pasquariello and K. Hjort , “ Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding ,” IEEE J. Sel. Top. Quantum Electron.   8 , 118 – 131 ( 2002 ).
[Crossref]

Piprek, J.

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
[Crossref]

Priolo, F.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Razeghi, M.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Reed, G.T.

G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).

Rendina, I.

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
[Crossref]

Rong, H.

H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , and M. Paniccia , “ A continuous-wave Raman silicon laser ,” Nature   433 , 725 – 728 ( 2005 ).
[Crossref] [PubMed]

Rubin, D.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Salerno, J.

M. Razeghi , M. Defour , R. Blondeau , F. Omnes , P. Maurel , O. Acher , F. Brillouet , J. C. C-Fan , and J. Salerno , “ First cw operation of a Ga 0.25 In 0.75 As 0.5 P 0.5 -InP laser on a silicon substrate ,” Appl. Phys. Lett.   53 , 2389 – 2390 ( 1988 ).
[Crossref]

Samara-Rubio, D.

A. Liu , R. Jones , L. Liao , D. Samara-Rubio , D. Rubin , O. Cohen , R. Nicolaescu , and M. Paniccia , “ A highspeed silicon optical modulator based on a metal-oxide-semiconductor capacitor ,” Nature   427 , 615 – 618 ( 2004 ).
[Crossref] [PubMed]

Sanfilippo, D.

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Shao, G.

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

Sigg, H.

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Spinella, C.

G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
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A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
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Wada, H.

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
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B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
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B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
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B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
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IEEE J. Sel. Topics Quantum Electron. (1)

B. Jalali , S. Yegnanarayanan , T. Yoon , T. Yoshimoto , I. Rendina , and F. Coppinger , “ Advances in Silicon-on-Insulator Optoelectronics ,” IEEE J. Sel. Topics Quantum Electron.   4 , 938 – 947 ( 1998 ).
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IEEE Photon. Technol. Lett. (2)

H. Wada and T. Kamijoh , “ Room-Temperature CW operation of InGaAsP Lasers on Si Fabricated by Wafer Bonding ,” IEEE Photon. Technol. Lett.   8 , 173 – 175 ( 1996 ).
[Crossref]

A. Karim , K. A. Black , P. Abraham , D. Lofgreen , Y. J. Chiu , J. Piprek , and J. E. Bowers , “ Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation ,” IEEE Photon. Technol. Lett.   12 , 1438 – 1440 ( 2000 ).
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B. Gelloz and N. Koshida , “ Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode ,” J. Appl. Phys.   88 , 4319 – 4324 ( 2000 ).
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G. Franzò , S. Coffa , F. Priolo , and C. Spinella , “ Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes ,” J. Appl. Phys.   81 , 2784 – 2793 ( 1997 ).
[Crossref]

Nature (3)

W. L. Ng , M. A. Lorenco , R. M. Gwilliam , S. Ledain , G. Shao , and K. P. Homewood , “ An efficient room-temperature silicon-based light-emitting diode ,” Nature   410 , 192 – 194 ( 2001 ).
[Crossref] [PubMed]

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Opt. Express (1)

Physica E (1)

A. Irrera , D. Pacifici , M. Miritello , G. Franzo , F. Priolo , F. Iacona , D. Sanfilippo , G.Di Stefano , and P.G. Fallica , “ Electroluminescence properties of light emitting devices based on silicon nanocrystals ,” Physica E   16 , 395 – 399 ( 2003 ).
[Crossref]

Science (1)

G. Dehlinger , L. Diehl , U. Gennser , H. Sigg , J. Faist , K. Ensslin , D. Grützmacher , and E. Müller , “ Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures ,” Science   290 , 2277 – 2280 ( 2000 ).
[Crossref] [PubMed]

Other (1)

G.T. Reed and A. P. Knights , Silicon Photonics: An Introduction ( John Wiley, Chichester, UK, 2004 ).

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Figures (5)

Fig. 1.
Fig. 1.

Cross-section device structure of an SOI rib waveguide bonded to a III-V active region epitaxial structure.

Fig. 2.
Fig. 2.

SEM cross section of the fabricated device before HR coating.

Fig. 3.
Fig. 3.

(a) Calculated TE fundamental mode profile (b) TE near field image of lasing optical mode.

Fig. 4.
Fig. 4.

Single-sided fiber-coupled output power of the silicon evanescent laser as a function of pump power for several temperatures.

Fig. 5.
Fig. 5.

Spectrum of the silicon evanescent laser operating at 1538 nm. The spectrum is measured at 1.4 times the threshold power at 12 °C with 0.1 nm resolution.

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