Abstract

We report on 1.34-μm laser emission in Nd:YAG under diode pumping at 885 nm, directly into the 4F3/2 emitting level. 3.8 W of output power with 0.26 overall optical-to-optical efficiency was recorded from a 2.5-at.% Nd:YAG single-crystal. Comparative results obtained by classical pumping at 809 nm, in the highly absorbing 4F5/2 level, are presented, showing the advantage of the direct pumping. The influence of lasing wavelength and Nd concentration on the thermal effects induced by optical pumping into the active component is discussed.

© 2005 Optical Society of America

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References

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    [CrossRef]
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    [CrossRef] [PubMed]

Appl. Opt.

Appl. Phys. B

V. Lupei, A. Lupei, N. Pavel, T. Taira and A. Ikesue �??Comparative investigation of spectroscopic and laser emission characteristics under direct 885-nm pump of concentrated Nd:YAG ceramics and crystals,�?? Appl. Phys. B 73, 757-762 (2001).
[CrossRef]

Appl. Phys. Lett.

V. Lupei, A. Lupei, N. Pavel, T. Taira, I. Shoji and A. Ikesue, �??Laser emission under resonant pump in the emitting level of concentrated Nd:YAG ceramics,�?? Appl. Phys. Lett. 79, 590-592 (2001).
[CrossRef]

V. Lupei, N. Pavel and T. Taira, �??Highly efficient continuous-wave 946-nm Nd:YAG laser emission under direct 885-nm pumping,�?? Appl. Phys. Lett. 81, 2677-2679 (2002).
[CrossRef]

V. Lupei, N. Pavel and T. Taira, �??1064 nm laser emission of highly doped Nd:Yttrium aluminum garnet under 885 nm diode laser pumping,�?? Appl. Phys. Lett. 80, 4309-4311 (2002).
[CrossRef]

CLEO/QELS Europe Conference 2003

N. Pavel, V. Lupei and T. Taira, �??The effect of Nd concentration on 1064 and 946-nm emission of Nd:YAG lasers under continuous-wave Ti: Sapphire pumping�??, in Technical Digest of CLEO/QELS Europe Conference, Munich, Germany, June 2003, paper CA9T.

IEEE J. Quantum Electron.

T.Y. Fan, �??Heat generation in Nd:YAG and Yb:YAG,�?? IEEE J. Quantum Electron. 29, 1457-1459 (1993).
[CrossRef]

Y. Inoue and S. Fujikawa, �??Diode-pumped Nd:YAG laser producing 122-W power at 1.319 mm,�?? IEEE J. Quantum Electron. 36, 751-756 (2000).
[CrossRef]

J. Appl. Phys.

L.J. Rosenkrantz, �??GaAs diode-pumped Nd:YAG laser,�?? J. Appl. Phys. 43, 4603-4605 (1972).
[CrossRef]

Opt. Commun.

R. Lavi, S. Jackel, A. Tal, E. Lebiush, Y. Tzuk and S. Goldring, �??885 nm high-power diodes end-pumped Nd:YAG laser,�?? Opt. Commun. 195, 427-430 (2001).
[CrossRef]

Opt. Express

Opt. Lett.

Phys. Rev. B

V. Lupei, A. Lupei, S. Georgescu, T. Taira, Y. Sato and A. Ikesue, �??The effect of Nd concentration on the spectroscopic and emission decay properties of highly doped Nd:YAG ceramics,�?? Phys. Rev. B 64, 092102 (2001).
[CrossRef]

Proc. IEEE

M. Ross, �??YAG laser operation by semiconductor laser pumping,�?? Proc. IEEE 56, 196-197 (1968).
[CrossRef]

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Figures (5)

Fig. 1.
Fig. 1.

Output power vs. absorbed pump power for the 1.0-at.% Nd:YAG emitting at (a) 1.06 μm and (b) 1.34 μm.

Fig. 2.
Fig. 2.

Output power vs. absorbed pump power for the 2.5-at.% Nd:YAG emitting at (a) 1.06 μm and (b) 1.34 μm.

Fig. 3.
Fig. 3.

ηh vs. CNd under 885-nm pumping, non-lasing and efficient lasing at 1.06 and 1.34 μm.

Fig. 4.
Fig. 4.

Maximum temperature of the 1.0-at.% Nd:YAG output surface vs. absorbed power at 885 nm. The recorded images for the maximum Pabs ~3.9 W are shown.

Fig. 5.
Fig. 5.

Maximum temperature of the 2.5-at.% Nd:YAG output surface vs. absorbed power at 885 nm. The recorded images for the maximum Pabs ~ 10.2 W are shown.

Equations (1)

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η h = 1 η p [ ( 1 n ) η qe η qd f + η η qd ]

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