H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, “Carrier Relaxation in InGaN/GaN Quantum Wells with Nonometer-scale Cluster Structures,” Appl. Phys. Lett. 85, 1371–1373 (2004).
[Crossref]
T. Katayama and H. Kawaguchi, “Measurement of Ultrafast Cross-Gain Saturation Dynamics of a Semiconductor Optical Amplifier Using Two-Color Pump-Probe Technique,” IEEE Photo. Tech. Lett. 16, 855–857 (2004).
[Crossref]
Ü. Özgür and H. O. Everitt, “Ultrafast Carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N Multiple Quantum Well,” Phys. Rev. B 67, 155308-1–9 (2003).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
R. K. Shelton, L. -S. Ma, H.C. Kapteyn, M. M. Murnane, J. L. Hall, and J. Ye “Phase-Coherent Optical Pulse Synthesis from Separate Femtosecond Lasers,” Science 293, 1286–1289 (2001).
[Crossref]
[PubMed]
Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, and S. Nakamura, “Dynamics of Optical Gain in InxGa1-xN Multi-quantum-well-based Laser Diodes,” Appl. Phys. Lett. 77, 2151–2153 (2000).
[Crossref]
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
J. Y. Sohn, Y. H. Ahn, K. J. Yee, and D. S. Kim, “Two-color Femtosecond Experiments by Use of Two Independently Tunable Ti:sapphire Lasers with a Sample-and Hold Switch,” Appl. Opt. 38, 5889–5902 (1999).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
A. Othonos, “Probing Ultrafast Carrier and Phonon Dynamics in Semiconductors,” J. Appl. Phys. 83, 1789–1830 (1998).
[Crossref]
F. R. Laughton, J. H. Marsh, D. A. Barrow, and E. L. Portnoi, “The Two-Photon Absorption Semiconductor Waveguide Autocorrelator,” IEEE J. Quantum Electron 30, 838–845 (1994).
[Crossref]
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
J. Y. Sohn, Y. H. Ahn, K. J. Yee, and D. S. Kim, “Two-color Femtosecond Experiments by Use of Two Independently Tunable Ti:sapphire Lasers with a Sample-and Hold Switch,” Appl. Opt. 38, 5889–5902 (1999).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
F. R. Laughton, J. H. Marsh, D. A. Barrow, and E. L. Portnoi, “The Two-Photon Absorption Semiconductor Waveguide Autocorrelator,” IEEE J. Quantum Electron 30, 838–845 (1994).
[Crossref]
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, “Carrier Relaxation in InGaN/GaN Quantum Wells with Nonometer-scale Cluster Structures,” Appl. Phys. Lett. 85, 1371–1373 (2004).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
Ü. Özgür and H. O. Everitt, “Ultrafast Carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N Multiple Quantum Well,” Phys. Rev. B 67, 155308-1–9 (2003).
[Crossref]
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, and S. Nakamura, “Dynamics of Optical Gain in InxGa1-xN Multi-quantum-well-based Laser Diodes,” Appl. Phys. Lett. 77, 2151–2153 (2000).
[Crossref]
R. K. Shelton, L. -S. Ma, H.C. Kapteyn, M. M. Murnane, J. L. Hall, and J. Ye “Phase-Coherent Optical Pulse Synthesis from Separate Femtosecond Lasers,” Science 293, 1286–1289 (2001).
[Crossref]
[PubMed]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
R. K. Shelton, L. -S. Ma, H.C. Kapteyn, M. M. Murnane, J. L. Hall, and J. Ye “Phase-Coherent Optical Pulse Synthesis from Separate Femtosecond Lasers,” Science 293, 1286–1289 (2001).
[Crossref]
[PubMed]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
T. Katayama and H. Kawaguchi, “Measurement of Ultrafast Cross-Gain Saturation Dynamics of a Semiconductor Optical Amplifier Using Two-Color Pump-Probe Technique,” IEEE Photo. Tech. Lett. 16, 855–857 (2004).
[Crossref]
T. Katayama and H. Kawaguchi, “Measurement of Ultrafast Cross-Gain Saturation Dynamics of a Semiconductor Optical Amplifier Using Two-Color Pump-Probe Technique,” IEEE Photo. Tech. Lett. 16, 855–857 (2004).
[Crossref]
Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, and S. Nakamura, “Dynamics of Optical Gain in InxGa1-xN Multi-quantum-well-based Laser Diodes,” Appl. Phys. Lett. 77, 2151–2153 (2000).
[Crossref]
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
J. Y. Sohn, Y. H. Ahn, K. J. Yee, and D. S. Kim, “Two-color Femtosecond Experiments by Use of Two Independently Tunable Ti:sapphire Lasers with a Sample-and Hold Switch,” Appl. Opt. 38, 5889–5902 (1999).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
F. R. Laughton, J. H. Marsh, D. A. Barrow, and E. L. Portnoi, “The Two-Photon Absorption Semiconductor Waveguide Autocorrelator,” IEEE J. Quantum Electron 30, 838–845 (1994).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, “Carrier Relaxation in InGaN/GaN Quantum Wells with Nonometer-scale Cluster Structures,” Appl. Phys. Lett. 85, 1371–1373 (2004).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, “Carrier Relaxation in InGaN/GaN Quantum Wells with Nonometer-scale Cluster Structures,” Appl. Phys. Lett. 85, 1371–1373 (2004).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, “Carrier Relaxation in InGaN/GaN Quantum Wells with Nonometer-scale Cluster Structures,” Appl. Phys. Lett. 85, 1371–1373 (2004).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
R. K. Shelton, L. -S. Ma, H.C. Kapteyn, M. M. Murnane, J. L. Hall, and J. Ye “Phase-Coherent Optical Pulse Synthesis from Separate Femtosecond Lasers,” Science 293, 1286–1289 (2001).
[Crossref]
[PubMed]
F. R. Laughton, J. H. Marsh, D. A. Barrow, and E. L. Portnoi, “The Two-Photon Absorption Semiconductor Waveguide Autocorrelator,” IEEE J. Quantum Electron 30, 838–845 (1994).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
R. K. Shelton, L. -S. Ma, H.C. Kapteyn, M. M. Murnane, J. L. Hall, and J. Ye “Phase-Coherent Optical Pulse Synthesis from Separate Femtosecond Lasers,” Science 293, 1286–1289 (2001).
[Crossref]
[PubMed]
Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, and S. Nakamura, “Dynamics of Optical Gain in InxGa1-xN Multi-quantum-well-based Laser Diodes,” Appl. Phys. Lett. 77, 2151–2153 (2000).
[Crossref]
Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, and S. Nakamura, “Dynamics of Optical Gain in InxGa1-xN Multi-quantum-well-based Laser Diodes,” Appl. Phys. Lett. 77, 2151–2153 (2000).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, and S. Nakamura, “Dynamics of Optical Gain in InxGa1-xN Multi-quantum-well-based Laser Diodes,” Appl. Phys. Lett. 77, 2151–2153 (2000).
[Crossref]
A. Othonos, “Probing Ultrafast Carrier and Phonon Dynamics in Semiconductors,” J. Appl. Phys. 83, 1789–1830 (1998).
[Crossref]
Ü. Özgür and H. O. Everitt, “Ultrafast Carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N Multiple Quantum Well,” Phys. Rev. B 67, 155308-1–9 (2003).
[Crossref]
Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Ultrafast Optical Characterization of Carrier Capture Times in InxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 109–111 (2000).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
F. R. Laughton, J. H. Marsh, D. A. Barrow, and E. L. Portnoi, “The Two-Photon Absorption Semiconductor Waveguide Autocorrelator,” IEEE J. Quantum Electron 30, 838–845 (1994).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
J. Shah, Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures (Springer-Verlag, Berlin, 1996).
R. K. Shelton, L. -S. Ma, H.C. Kapteyn, M. M. Murnane, J. L. Hall, and J. Ye “Phase-Coherent Optical Pulse Synthesis from Separate Femtosecond Lasers,” Science 293, 1286–1289 (2001).
[Crossref]
[PubMed]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
J. Y. Sohn, Y. H. Ahn, K. J. Yee, and D. S. Kim, “Two-color Femtosecond Experiments by Use of Two Independently Tunable Ti:sapphire Lasers with a Sample-and Hold Switch,” Appl. Opt. 38, 5889–5902 (1999).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
U. Morgner, F. X. Kärtner, S. H. Cho, Y. Chen, H. A. Haus, J. G. Fujimoto, E. P. Ippen, V. Scheuer, G. Angelow, and T. Tschudi, “Sub-two-cycle pulses from a Kerr-lens mode-locked Ti:sapphire laser,” Opt. Lett. 24, 411–413 (1999).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, “Carrier Relaxation in InGaN/GaN Quantum Wells with Nonometer-scale Cluster Structures,” Appl. Phys. Lett. 85, 1371–1373 (2004).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, J. C. Woo, D. S. Kim, G. D. Sanders, and C. J. Stanton, “Probing Strained InGaN/GaN Nanostructures with Ultrashort Acoustic Phonon Wave Packets Generated by Femtosecond Lasers,” Appl. Phys. Lett. 80, 4723–4725 (2002).
[Crossref]
H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97, 033704-1–4 (2005).
H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, “Carrier Relaxation in InGaN/GaN Quantum Wells with Nonometer-scale Cluster Structures,” Appl. Phys. Lett. 85, 1371–1373 (2004).
[Crossref]
S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, K. H. Kim, C. H. Shen, L. C. Chen, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects of an InGaN Film with an Avearge Indium Mole Fraction of 0.31,” Appl. Phys. Lett. 83, 3906–3908 (2003).
[Crossref]
R. K. Shelton, L. -S. Ma, H.C. Kapteyn, M. M. Murnane, J. L. Hall, and J. Ye “Phase-Coherent Optical Pulse Synthesis from Separate Femtosecond Lasers,” Science 293, 1286–1289 (2001).
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