Abstract

All-optical gate-switch operation utilizing GaN intersubband-transition has been achieved by reducing edge dislocation density in the epitaxial layers. The diminution of dislocation was accomplished by MBE regrowth on an MOCVD-grown layer. Excess propagation loss for transverse magnetic polarization decreased due to the reduction of the dislocation. By the improvement of the propagation property, sub-picosecond all-optical gate with an extinction ratio of more than 10 dB was accomplished with an input pulse energy of 150 pJ. Moreover, the insertion loss with the switch on was improved.

© 2005 Optical Society of America

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  1. S. Noda, T. Uemura, T. Yamashita, and A. Sasaki, �??All-optical modulation using an n-doped quantum-well structure,�?? J. Appl. Phys. 68, 6529-6531 (1990).
    [CrossRef]
  2. T. Akiyama, N. Georgiev, T. Mozume, H. Yoshida, A. V. Gopal, and O. Wada, �??Nonlinearity and recovery time of 1.55 μm intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,�?? Electron. Lett. 37, 129-130 (2001).
    [CrossRef]
  3. R. Akimoto, K. Akita, F. Sasaki, and T. Hasama, �??Sub-picosecond electron relaxation of near-infrared intersubband transition in n-doped (CdS/ZnSe)/BeTe quantum wells,�?? Appl. Phys. Lett. 81, 2998-3000 (2002).
    [CrossRef]
  4. H. M. Ng, C. Gmachl. S. N. G. Chu, and A. Y. Cho, �??Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 μm intersubband transitions,�?? J. Crystal Growth 220, 432-438 (2000).
  5. N. Suzuki, and N. Iizuka, �??Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells,�?? Jpn. J. Appl. Phys. 36, L1006-1008 (1997).
    [CrossRef]
  6. C. Gmachl, S. V. Frolov, H. M. Ng, S. N. G. Chu, and A. Y. Cho, �??Sub-picosecond electron scattering time for λ~1.55 μm intersubband transition in GaN/AlGaN multiple quantum wells,�?? Electron. Lett. 37, 378-380 (2001)
    [CrossRef]
  7. N. Iizuka, K. Kaneko, and N. Suzuki, �??Near-infrared intersubband transition in GaN/ALN quantum wells grown by molecular beam epitaxy,�?? Appl. Phys. Lett. 81, 1803-1805 (2002)
    [CrossRef]
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    [CrossRef]
  9. K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, �??Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm,�?? Appl. Phys. Lett. 81, 1234-1236 (2002)
    [CrossRef]
  10. N. Iizuka, K. Kaneko, and N. Suzuki, �??Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells,�?? Electron. Lett. 40, 962-963 (2004)
    [CrossRef]
  11. N. Iizuka, K. Kaneko, and N. Suzuki, �??Effect of edge dislocation of polarization dependent loss of MBE-grown GaN ridge waveguide at optical communication wavelengths,�?? presented at 2004 MRS Fall Meeting, Boston, MA, 29 Nov. �??3 Dec. 2004
  12. W. T. Reed, �??Theory of Dislocation in Germanium,�?? Phil. Magn. 45, 775-796 (1954)
  13. H. M. Ng, D. Doppalapudi, D. Korakakis, R. Singh, and T. D. Moustakas, �??MBE growth and doping III-V nitrides,�?? J. Crystal Growth, 189/190, 349-353 (1998)

Appl. Phys. Lett. (4)

R. Akimoto, K. Akita, F. Sasaki, and T. Hasama, �??Sub-picosecond electron relaxation of near-infrared intersubband transition in n-doped (CdS/ZnSe)/BeTe quantum wells,�?? Appl. Phys. Lett. 81, 2998-3000 (2002).
[CrossRef]

N. Iizuka, K. Kaneko, and N. Suzuki, �??Near-infrared intersubband transition in GaN/ALN quantum wells grown by molecular beam epitaxy,�?? Appl. Phys. Lett. 81, 1803-1805 (2002)
[CrossRef]

J. Hamazaki, S. Matsui, H. Kunugita, K. Ema, H. Kanazawa, T. Tachibana, A. Kikuchi, and K. Kishino, �??Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells,�?? Appl. Phys. Lett. 84, 1102-1104 (2004)
[CrossRef]

K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, �??Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm,�?? Appl. Phys. Lett. 81, 1234-1236 (2002)
[CrossRef]

Electron. Lett. (3)

N. Iizuka, K. Kaneko, and N. Suzuki, �??Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells,�?? Electron. Lett. 40, 962-963 (2004)
[CrossRef]

T. Akiyama, N. Georgiev, T. Mozume, H. Yoshida, A. V. Gopal, and O. Wada, �??Nonlinearity and recovery time of 1.55 μm intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,�?? Electron. Lett. 37, 129-130 (2001).
[CrossRef]

C. Gmachl, S. V. Frolov, H. M. Ng, S. N. G. Chu, and A. Y. Cho, �??Sub-picosecond electron scattering time for λ~1.55 μm intersubband transition in GaN/AlGaN multiple quantum wells,�?? Electron. Lett. 37, 378-380 (2001)
[CrossRef]

J. Appl. Phys. (1)

S. Noda, T. Uemura, T. Yamashita, and A. Sasaki, �??All-optical modulation using an n-doped quantum-well structure,�?? J. Appl. Phys. 68, 6529-6531 (1990).
[CrossRef]

J. Crystal Growth (2)

H. M. Ng, C. Gmachl. S. N. G. Chu, and A. Y. Cho, �??Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 μm intersubband transitions,�?? J. Crystal Growth 220, 432-438 (2000).

H. M. Ng, D. Doppalapudi, D. Korakakis, R. Singh, and T. D. Moustakas, �??MBE growth and doping III-V nitrides,�?? J. Crystal Growth, 189/190, 349-353 (1998)

Jpn. J. Appl. Phys. (1)

N. Suzuki, and N. Iizuka, �??Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells,�?? Jpn. J. Appl. Phys. 36, L1006-1008 (1997).
[CrossRef]

MRS Fall Meeting (1)

N. Iizuka, K. Kaneko, and N. Suzuki, �??Effect of edge dislocation of polarization dependent loss of MBE-grown GaN ridge waveguide at optical communication wavelengths,�?? presented at 2004 MRS Fall Meeting, Boston, MA, 29 Nov. �??3 Dec. 2004

Phil. Magn. (1)

W. T. Reed, �??Theory of Dislocation in Germanium,�?? Phil. Magn. 45, 775-796 (1954)

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