Abstract

High-power, continuous-wave operation at red wavelengths has been achieved with a vertical external cavity surface emitting laser based on the GaInP/AlGaInP/GaAs material system. Output power of 0.4W was obtained in a linearly polarized, circularly symmetric, diffraction-limited beam. A birefringent filter inserted in the cavity allowed tuning of the laser output spectrum over a 10nm range around 674nm.

© 2005 Optical Society of America

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  1. A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
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    [CrossRef]
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  4. A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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2004 (5)

A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
[CrossRef]

T. S.  Mang, “Lasers and light sources for PDT: past, present and future,” Photodiagnosis and Photodynamic Therapy 1, 43–48 (2004).
[CrossRef]

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

R.  Stevenson, “GaN substrates offer high performance at a price,” Compound Semiconductor 10, 20–21 (2004).

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

2003 (4)

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

2002 (1)

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

2000 (1)

M. A.  Holm, D.  Burns, A. I.  Ferguson, M. D.  Dawson, “Single-frequency second-harmonic generation in a vertical external-cavity semiconductor lasers,” Conference on Lasers and Electro-Optics (CLEO 2000), TOPS Vol. 39, 2000, 440–441.

1999 (1)

M. A.  Holm, A. I.  Ferguson, D.  Burns, M. D.  Dawson, “Actively single-frequency vertical-external-cavity AlGaAs laser,” IEEE Photon. Tech. Lett. 11, 1551–1553 (1999).
[CrossRef]

Abram, R.

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

Albrecht, T.

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

Alford, W. J.

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

Allerman, A. A.

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

Beyertt, S. S.

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

Brauch, U.

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

Brick, P.

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

Burns, D.

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

M. A.  Holm, D.  Burns, A. I.  Ferguson, M. D.  Dawson, “Single-frequency second-harmonic generation in a vertical external-cavity semiconductor lasers,” Conference on Lasers and Electro-Optics (CLEO 2000), TOPS Vol. 39, 2000, 440–441.

M. A.  Holm, A. I.  Ferguson, D.  Burns, M. D.  Dawson, “Actively single-frequency vertical-external-cavity AlGaAs laser,” IEEE Photon. Tech. Lett. 11, 1551–1553 (1999).
[CrossRef]

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Butterworth, S. D.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

Calvez, S.

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Caprara, A. L.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

Charles, J.P.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

Chilla, J. L.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

Dawson, M. D.

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

M. A.  Holm, D.  Burns, A. I.  Ferguson, M. D.  Dawson, “Single-frequency second-harmonic generation in a vertical external-cavity semiconductor lasers,” Conference on Lasers and Electro-Optics (CLEO 2000), TOPS Vol. 39, 2000, 440–441.

M. A.  Holm, A. I.  Ferguson, D.  Burns, M. D.  Dawson, “Actively single-frequency vertical-external-cavity AlGaAs laser,” IEEE Photon. Tech. Lett. 11, 1551–1553 (1999).
[CrossRef]

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Dohler, G. H.

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

Döhler, G. H.

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

Ecker, I.

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

Ferguson, A. I.

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

M. A.  Holm, D.  Burns, A. I.  Ferguson, M. D.  Dawson, “Single-frequency second-harmonic generation in a vertical external-cavity semiconductor lasers,” Conference on Lasers and Electro-Optics (CLEO 2000), TOPS Vol. 39, 2000, 440–441.

M. A.  Holm, A. I.  Ferguson, D.  Burns, M. D.  Dawson, “Actively single-frequency vertical-external-cavity AlGaAs laser,” IEEE Photon. Tech. Lett. 11, 1551–1553 (1999).
[CrossRef]

Foreman, H. D.

A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
[CrossRef]

Garnache, A.

A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
[CrossRef]

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

Gerster, E.

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

Giesen, A.

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

Hahn, C.

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

Hastie, J. E.

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Holm, M. A.

M. A.  Holm, D.  Burns, A. I.  Ferguson, M. D.  Dawson, “Single-frequency second-harmonic generation in a vertical external-cavity semiconductor lasers,” Conference on Lasers and Electro-Optics (CLEO 2000), TOPS Vol. 39, 2000, 440–441.

M. A.  Holm, A. I.  Ferguson, D.  Burns, M. D.  Dawson, “Actively single-frequency vertical-external-cavity AlGaAs laser,” IEEE Photon. Tech. Lett. 11, 1551–1553 (1999).
[CrossRef]

Hoogland, S.

A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
[CrossRef]

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

Hopkins, J. M.

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Hopkins, J.-M.

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

Jeon, C. W.

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

Jouhti, T.

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

Karnutsch, C.

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

Kemp, A. J.

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Kontinnen, J.

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

Kühnelt, M.

U.  Steegmüller, M.  Kühnelt, T.  Schwarz, U.  Zeitner, “Compact semiconductor based RGB lasers,” presented at the 10th Microoptics Conference (MOC’04), Jena, Germany, 1–3 Sept. 2004.

Linder, N.

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

Lorch, S.

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

Luft, J.

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

Lutgen, S.

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

Mang, T. S.

T. S.  Mang, “Lasers and light sources for PDT: past, present and future,” Photodiagnosis and Photodynamic Therapy 1, 43–48 (2004).
[CrossRef]

Menzel, S.

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

Müller, M. I.

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

Pessa, M.

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

Prasad, P. N.

P. N.  Prasad, Introduction to Biophotonics (John Wiley & Sons, Inc., Hoboken, 2003), Chap. 12.
[CrossRef]

Raymond, T. D.

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

Reed, M. K.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

Reill, W.

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

Riis, E.

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

Roberts, J. S.

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

Sagnes, I.

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

Saint-Girons, G.

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

Schmid, W.

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

Schwarz, T.

U.  Steegmüller, M.  Kühnelt, T.  Schwarz, U.  Zeitner, “Compact semiconductor based RGB lasers,” presented at the 10th Microoptics Conference (MOC’04), Jena, Germany, 1–3 Sept. 2004.

Smith, S. A.

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Späth, W.

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

Spinelli, L.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

Steegmüller, U.

U.  Steegmüller, M.  Kühnelt, T.  Schwarz, U.  Zeitner, “Compact semiconductor based RGB lasers,” presented at the 10th Microoptics Conference (MOC’04), Jena, Germany, 1–3 Sept. 2004.

Stevenson, R.

R.  Stevenson, “GaN substrates offer high performance at a price,” Compound Semiconductor 10, 20–21 (2004).

Streubel, K.

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

Tropper, A. C.

A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
[CrossRef]

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

Unger, P.

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

Valentine, G. J.

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

Wilcox, K. G.

A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
[CrossRef]

Zeitner, U.

U.  Steegmüller, M.  Kühnelt, T.  Schwarz, U.  Zeitner, “Compact semiconductor based RGB lasers,” presented at the 10th Microoptics Conference (MOC’04), Jena, Germany, 1–3 Sept. 2004.

Zeitschel, A.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

Appl. Phys. Lett. (2)

S.  Lutgen, T.  Albrecht, P.  Brick, W.  Reill, J.  Luft, W.  Späth, “8-W high-efficiency continuous-wave semiconductor disk laser at 1000nm,” Appl. Phys. Lett. 82, 3620–3622 (2003).
[CrossRef]

A.  Garnache, S.  Hoogland, A. C.  Tropper, I.  Sagnes, G.  Saint-Girons, J. S.  Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[CrossRef]

Compound Semiconductor (1)

R.  Stevenson, “GaN substrates offer high performance at a price,” Compound Semiconductor 10, 20–21 (2004).

Conference on Lasers and Electro-Optics (CLEO 2000) (1)

M. A.  Holm, D.  Burns, A. I.  Ferguson, M. D.  Dawson, “Single-frequency second-harmonic generation in a vertical external-cavity semiconductor lasers,” Conference on Lasers and Electro-Optics (CLEO 2000), TOPS Vol. 39, 2000, 440–441.

Electron. Lett. (3)

J.-M.  Hopkins, S. A.  Smith, C. W.  Jeon, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, M.  Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40, 30–31 (2004).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, C. W.  Jeon, S.  Calvez, D.  Burns, M. D.  Dawson, R.  Abram, E.  Riis, A. I.  Ferguson, W. J.  Alford, T. D.  Raymond, A. A.  Allerman, “Microchip vertical external cavity surface emitting lasers,” Electron. Lett. 39, 1324–1326 (2003).
[CrossRef]

S. A.  Smith, J. M.  Hopkins, J. E.  Hastie, D.  Burns, S.  Calvez, M. D.  Dawson, T.  Jouhti, J.  Kontinnen, M.  Pessa, “Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm,” Electron. Lett. 40, 935–937 (2004).
[CrossRef]

IEEE Photon. Tech. Lett. (2)

M. A.  Holm, A. I.  Ferguson, D.  Burns, M. D.  Dawson, “Actively single-frequency vertical-external-cavity AlGaAs laser,” IEEE Photon. Tech. Lett. 11, 1551–1553 (1999).
[CrossRef]

J. E.  Hastie, J. M.  Hopkins, S.  Calvez, C. W.  Jeon, D.  Burns, R.  Abram, E.  Riis, A. I.  Ferguson, M. D.  Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Tech. Lett. 15, 894–896 (2003).
[CrossRef]

J. of Appl. Phys. (1)

E.  Gerster, I.  Ecker, S.  Lorch, C.  Hahn, S.  Menzel, P.  Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. of Appl. Phys. 94, 7397–7401 (2003).
[CrossRef]

J. of Phys. D (1)

A. C.  Tropper, H. D.  Foreman, A.  Garnache, K. G.  Wilcox, S.  Hoogland, “Vertical-external-cavity semiconductor lasers,” J. of Phys. D 37, R75–R85 (2004).
[CrossRef]

Photodiagnosis and Photodynamic Therapy (1)

T. S.  Mang, “Lasers and light sources for PDT: past, present and future,” Photodiagnosis and Photodynamic Therapy 1, 43–48 (2004).
[CrossRef]

Other (8)

M. I.  Müller, N.  Linder, C.  Karnutsch, W.  Schmid, K.  Streubel, J.  Luft, S. S.  Beyertt, A.  Giesen, G. H.  Dohler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660nm,” in Vertical-Cavity Surface-Emitting Lasers VI , C.  Lei, S. P.  Kilcoyne, eds., Proc. SPIE 4649, 265–271 (2002).

M. I.  Müller, C.  Karnutsch, J.  Luft, W.  Schmid, K.  Streubel, N.  Linder, S. S.  Beyertt, U.  Brauch, A.  Giesen, G. H.  Döhler, “Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660nm,” in Proceedings of the 29th Int. Symp. Compound Semiconductors , (IOP Publishing Ltd., 2003), 427–430.
[PubMed]

G.  Purvis ed., Advanced Semiconductors Buyers Guide, (Elsevier Ltd., 2003).

A. J.  Kemp, G. J.  Valentine, J. M.  Hopkins, J. E.  Hastie, S. A.  Smith, S.  Calvez, M. D.  Dawson, D.  Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. of Quantum Electron. (to be published).

P. N.  Prasad, Introduction to Biophotonics (John Wiley & Sons, Inc., Hoboken, 2003), Chap. 12.
[CrossRef]

“Coherent unveils all solid-state blue laser,” Photonics Spectra 8, (2001).

U.  Steegmüller, M.  Kühnelt, T.  Schwarz, U.  Zeitner, “Compact semiconductor based RGB lasers,” presented at the 10th Microoptics Conference (MOC’04), Jena, Germany, 1–3 Sept. 2004.

J. L.  Chilla, S. D.  Butterworth, A.  Zeitschel, J.P.  Charles, A. L.  Caprara, M. K.  Reed, L.  Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices , R.  Scheps, H. J.  Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

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Figures (3)

Fig. 1.
Fig. 1.

Experimental set-up of the red VECSEL. A birefringent filter was inserted in the cavity in order to tune the laser output spectrum. f: focal length; HR: high reflector; ROC: radius of curvature; OC: output coupler.

Fig. 2.
Fig. 2.

Power transfer of the laser with the brass mount cooling water at 0°C. Inset: horizontal profile of the laser beam measured after the output coupler.

Fig. 3.
Fig. 3.

Tuning curves of the laser at two output couplings, with a birefringent filter inserted in the cavity. The laser output spectrum, measured at high power, is also shown.

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