Abstract

A novel coupled-quantum-well system is described in which the in-plane, anisotropic strain in successive well layers alternates between compression and tension. A polarization anisotropy in the interband optical matrix elements that arises due to anisotropic strain is reversed between the compressive and tensile cases. Hence, transitions associated with the different well layers have reversed polarization anisotropies. The structure of interest has great flexibility in the energies of successive interband transitions, and in the size of the anisotropy of the various transitions. The structure can be used in describing quantum-well properties, in optical multiplexing, and in devices such as modulators.

© 2002 Optical Society of America

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  1. Man-Fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong, “Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain,” Appl. Phys. Lett. 66, 736–738 (1995).
    [CrossRef]
  2. Man-Fang Huang, Elsa Garmire, and Yen-Kuang Kuo, “Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: compression along[110] and tension along [-110],” Jpn. J. Appl. Phys. 39, 1776–1781 (2000).
    [CrossRef]
  3. H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).
  4. H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
    [CrossRef]
  5. M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
    [CrossRef]
  6. D. Burak, J. V. Moloney, and R. Binder, “Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers,” IEEE J. of Quantum. Electron. 36, 956–970 (2000).
    [CrossRef]
  7. M. Wraback and H. Shen, “A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well,” Appl. Phys. Lett. 76, 1288–1290 (2000).
    [CrossRef]
  8. J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
    [CrossRef]
  9. Mark L. Biermann and W. S. Rabinovich, “In-plane anisotropy in GaxIn1-xAs/ AlyIn1-yAs quantum wells under tensile, in-plane strain,” unpublished.
  10. Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
    [CrossRef]
  11. P. Lefebvre, P. Bonnel, B. Gil, and H. Mathieu, “Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells,” Phys. Rev. B 44, 5635–5647, (1991).
    [CrossRef]
  12. J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
    [CrossRef]
  13. J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
    [CrossRef]
  14. G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
    [CrossRef]
  15. W. S. Rabinovich, et. al., “Anisotropic strain in quantum wells via micromachining,” unpublished.
  16. G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
    [CrossRef]
  17. C. Mailhiot and D. L. Smith, “k∙ p theory of semiconductor superlattice electronic structure. II. Application to Ga1-xInxAs-Al1-yInyAs [100] superlattices,” Phys. Rev. B 33, 8360–8372 (1986).
    [CrossRef]
  18. D. L. Smith and C. Mailhiot, ““k∙ p theory of semiconductor superlattice electronic structure. I . Formal results,” Phys. Rev. B 33, 8345–8359 (1986).
    [CrossRef]
  19. C. Mailhiot and D. L. Smith, “Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices,” Phys. Rev. B 35, 1242–1259 (1987).
    [CrossRef]
  20. Mark L. Biermann and C. R. Stroud, “Behavior of zone-center, subband energies in narrow, strongly coupled quantum wells,” Appl. Phys. Lett. 58, 505–507 (1991).
    [CrossRef]
  21. P. O. Löwdin, “A note on quantum-mechanical perturbation theory,” J. Chem. Phys. 19, 1396–1401 (1951).
    [CrossRef]
  22. C. Mailhiot and D. L. Smith, “Effects of compressive uniaxial stress on the electronic structure of GaAs-Ga1-xAlxAs quantum wells,” Phys. Rev. B 36, 2942–2945 (1987).
    [CrossRef]

2000 (3)

Man-Fang Huang, Elsa Garmire, and Yen-Kuang Kuo, “Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: compression along[110] and tension along [-110],” Jpn. J. Appl. Phys. 39, 1776–1781 (2000).
[CrossRef]

D. Burak, J. V. Moloney, and R. Binder, “Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers,” IEEE J. of Quantum. Electron. 36, 956–970 (2000).
[CrossRef]

M. Wraback and H. Shen, “A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well,” Appl. Phys. Lett. 76, 1288–1290 (2000).
[CrossRef]

1999 (3)

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
[CrossRef]

G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

1998 (1)

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

1995 (1)

Man-Fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong, “Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain,” Appl. Phys. Lett. 66, 736–738 (1995).
[CrossRef]

1994 (1)

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

1993 (4)

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

1991 (2)

P. Lefebvre, P. Bonnel, B. Gil, and H. Mathieu, “Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells,” Phys. Rev. B 44, 5635–5647, (1991).
[CrossRef]

Mark L. Biermann and C. R. Stroud, “Behavior of zone-center, subband energies in narrow, strongly coupled quantum wells,” Appl. Phys. Lett. 58, 505–507 (1991).
[CrossRef]

1987 (2)

C. Mailhiot and D. L. Smith, “Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices,” Phys. Rev. B 35, 1242–1259 (1987).
[CrossRef]

C. Mailhiot and D. L. Smith, “Effects of compressive uniaxial stress on the electronic structure of GaAs-Ga1-xAlxAs quantum wells,” Phys. Rev. B 36, 2942–2945 (1987).
[CrossRef]

1986 (2)

C. Mailhiot and D. L. Smith, “k∙ p theory of semiconductor superlattice electronic structure. II. Application to Ga1-xInxAs-Al1-yInyAs [100] superlattices,” Phys. Rev. B 33, 8360–8372 (1986).
[CrossRef]

D. L. Smith and C. Mailhiot, ““k∙ p theory of semiconductor superlattice electronic structure. I . Formal results,” Phys. Rev. B 33, 8345–8359 (1986).
[CrossRef]

1951 (1)

P. O. Löwdin, “A note on quantum-mechanical perturbation theory,” J. Chem. Phys. 19, 1396–1401 (1951).
[CrossRef]

Ballato, A.

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

Barwolff, A.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Biermann, Mark L.

Mark L. Biermann and C. R. Stroud, “Behavior of zone-center, subband energies in narrow, strongly coupled quantum wells,” Appl. Phys. Lett. 58, 505–507 (1991).
[CrossRef]

Mark L. Biermann and W. S. Rabinovich, “In-plane anisotropy in GaxIn1-xAs/ AlyIn1-yAs quantum wells under tensile, in-plane strain,” unpublished.

Binder, R.

D. Burak, J. V. Moloney, and R. Binder, “Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers,” IEEE J. of Quantum. Electron. 36, 956–970 (2000).
[CrossRef]

Bonnel, P.

P. Lefebvre, P. Bonnel, B. Gil, and H. Mathieu, “Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells,” Phys. Rev. B 44, 5635–5647, (1991).
[CrossRef]

Bonnel, Philippe

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Burak, D.

D. Burak, J. V. Moloney, and R. Binder, “Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers,” IEEE J. of Quantum. Electron. 36, 956–970 (2000).
[CrossRef]

Chen, Yong

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Daiminger, F. X.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Deparis, Christiane

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Donecker, J.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Dutta, M.

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

Elseasser, T.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Fierling, G.

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
[CrossRef]

Garmire, Elsa

Man-Fang Huang, Elsa Garmire, and Yen-Kuang Kuo, “Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: compression along[110] and tension along [-110],” Jpn. J. Appl. Phys. 39, 1776–1781 (2000).
[CrossRef]

Man-Fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong, “Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain,” Appl. Phys. Lett. 66, 736–738 (1995).
[CrossRef]

Gerhardt, A.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Gil, B.

P. Lefebvre, P. Bonnel, B. Gil, and H. Mathieu, “Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells,” Phys. Rev. B 44, 5635–5647, (1991).
[CrossRef]

Gil, Bernard

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Glanfield, A. R.

G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
[CrossRef]

Hong, Minghwei

Man-Fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong, “Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain,” Appl. Phys. Lett. 66, 736–738 (1995).
[CrossRef]

Huang, Man-Fang

Man-Fang Huang, Elsa Garmire, and Yen-Kuang Kuo, “Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: compression along[110] and tension along [-110],” Jpn. J. Appl. Phys. 39, 1776–1781 (2000).
[CrossRef]

Man-Fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong, “Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain,” Appl. Phys. Lett. 66, 736–738 (1995).
[CrossRef]

Hutter, M.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

Johnson, N. F.

G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
[CrossRef]

Kaulfersch, E.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

Klipstein, P. C.

G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
[CrossRef]

Kuo, H. C.

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

Kuo, Yen-Kuang

Man-Fang Huang, Elsa Garmire, and Yen-Kuang Kuo, “Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: compression along[110] and tension along [-110],” Jpn. J. Appl. Phys. 39, 1776–1781 (2000).
[CrossRef]

Lainé, J. P.

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
[CrossRef]

Lefebvre, P.

P. Lefebvre, P. Bonnel, B. Gil, and H. Mathieu, “Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells,” Phys. Rev. B 44, 5635–5647, (1991).
[CrossRef]

Lefebvre, Pierre

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Letartre, X.

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
[CrossRef]

Lorenzen, D.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Löwdin, P. O.

P. O. Löwdin, “A note on quantum-mechanical perturbation theory,” J. Chem. Phys. 19, 1396–1401 (1951).
[CrossRef]

Lu, Y.

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

Mailhiot, C.

C. Mailhiot and D. L. Smith, “Effects of compressive uniaxial stress on the electronic structure of GaAs-Ga1-xAlxAs quantum wells,” Phys. Rev. B 36, 2942–2945 (1987).
[CrossRef]

C. Mailhiot and D. L. Smith, “Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices,” Phys. Rev. B 35, 1242–1259 (1987).
[CrossRef]

C. Mailhiot and D. L. Smith, “k∙ p theory of semiconductor superlattice electronic structure. II. Application to Ga1-xInxAs-Al1-yInyAs [100] superlattices,” Phys. Rev. B 33, 8360–8372 (1986).
[CrossRef]

D. L. Smith and C. Mailhiot, ““k∙ p theory of semiconductor superlattice electronic structure. I . Formal results,” Phys. Rev. B 33, 8345–8359 (1986).
[CrossRef]

Massies, Jean

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Mathieu, H.

P. Lefebvre, P. Bonnel, B. Gil, and H. Mathieu, “Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells,” Phys. Rev. B 44, 5635–5647, (1991).
[CrossRef]

Mathieu, Henry

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Moloney, J. V.

D. Burak, J. V. Moloney, and R. Binder, “Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers,” IEEE J. of Quantum. Electron. 36, 956–970 (2000).
[CrossRef]

Muller, R.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Neu, Gerard

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

Newman, P. G.

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

Pamulapati, J.

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

Partovi, Afshin

Man-Fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong, “Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain,” Appl. Phys. Lett. 66, 736–738 (1995).
[CrossRef]

Priester, C.

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
[CrossRef]

Rabinovich, W. S.

W. S. Rabinovich, et. al., “Anisotropic strain in quantum wells via micromachining,” unpublished.

Mark L. Biermann and W. S. Rabinovich, “In-plane anisotropy in GaxIn1-xAs/ AlyIn1-yAs quantum wells under tensile, in-plane strain,” unpublished.

Rau, G.

G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
[CrossRef]

Reichl, H.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

Shen, H.

M. Wraback and H. Shen, “A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well,” Appl. Phys. Lett. 76, 1288–1290 (2000).
[CrossRef]

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

Smith, D. L.

C. Mailhiot and D. L. Smith, “Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices,” Phys. Rev. B 35, 1242–1259 (1987).
[CrossRef]

C. Mailhiot and D. L. Smith, “Effects of compressive uniaxial stress on the electronic structure of GaAs-Ga1-xAlxAs quantum wells,” Phys. Rev. B 36, 2942–2945 (1987).
[CrossRef]

C. Mailhiot and D. L. Smith, “k∙ p theory of semiconductor superlattice electronic structure. II. Application to Ga1-xInxAs-Al1-yInyAs [100] superlattices,” Phys. Rev. B 33, 8360–8372 (1986).
[CrossRef]

D. L. Smith and C. Mailhiot, ““k∙ p theory of semiconductor superlattice electronic structure. I . Formal results,” Phys. Rev. B 33, 8345–8359 (1986).
[CrossRef]

Smith, G. W.

G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
[CrossRef]

Stroud, C. R.

Mark L. Biermann and C. R. Stroud, “Behavior of zone-center, subband energies in narrow, strongly coupled quantum wells,” Appl. Phys. Lett. 58, 505–507 (1991).
[CrossRef]

Taysing-Lara, M.

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

Tomm, J. W.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

Viktorovitch, P.

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
[CrossRef]

Weiss, S.

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

Wraback, M.

M. Wraback and H. Shen, “A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well,” Appl. Phys. Lett. 76, 1288–1290 (2000).
[CrossRef]

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

Appl. Phys. Lett. (6)

Man-Fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong, “Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain,” Appl. Phys. Lett. 66, 736–738 (1995).
[CrossRef]

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, “Normal incidence high contrast multiple quantum well light modulator based on polarization rotation,” Appl. Phys. Lett. 62, 2908–2910 (1993).
[CrossRef]

M. Wraback and H. Shen, “A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well,” Appl. Phys. Lett. 76, 1288–1290 (2000).
[CrossRef]

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, “Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices,” Appl. Phys. Lett. 73, 3908–3910 (1998).
[CrossRef]

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester, “Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams,” Appl. Phys. Lett. 74, 1990–1992 (1999).
[CrossRef]

Mark L. Biermann and C. R. Stroud, “Behavior of zone-center, subband energies in narrow, strongly coupled quantum wells,” Appl. Phys. Lett. 58, 505–507 (1991).
[CrossRef]

IEEE J. of Quantum. Electron. (1)

D. Burak, J. V. Moloney, and R. Binder, “Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers,” IEEE J. of Quantum. Electron. 36, 956–970 (2000).
[CrossRef]

IEEE Trans. Elec. Devices (1)

J. Pamulapati, H. Shen, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, “Normal Incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain,” IEEE Trans. Elec. Devices 40, 2144–2145 (1993).
[CrossRef]

J. Chem. Phys. (1)

P. O. Löwdin, “A note on quantum-mechanical perturbation theory,” J. Chem. Phys. 19, 1396–1401 (1951).
[CrossRef]

J. of Apl. Phys. (1)

J. W. Tomm, R. Muller, A. Barwolff, T. Elseasser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, and H. Reichl, “Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes,” J. of Apl. Phys. 86, 1196–1201 (1999).
[CrossRef]

Jpn. J. Appl. Phys. (1)

Man-Fang Huang, Elsa Garmire, and Yen-Kuang Kuo, “Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: compression along[110] and tension along [-110],” Jpn. J. Appl. Phys. 39, 1776–1781 (2000).
[CrossRef]

Phys. Rev. B (8)

H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu, and H. C. Kuo, “Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain,” Phys. Rev. B 47, 13,933–13936 (1993).

Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gerard Neu, and Yong Chen, “Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells,” Phys. Rev. B 47, 1954–1960, (1993).
[CrossRef]

P. Lefebvre, P. Bonnel, B. Gil, and H. Mathieu, “Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells,” Phys. Rev. B 44, 5635–5647, (1991).
[CrossRef]

G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson, and G. W. Smith, “Optical properties of GaAs/Al1-xGaxAs quantum wells subjected to large in-plane uniaxial stress,” Phys. Rev. B 60, 1900–1914 (1999).
[CrossRef]

C. Mailhiot and D. L. Smith, “k∙ p theory of semiconductor superlattice electronic structure. II. Application to Ga1-xInxAs-Al1-yInyAs [100] superlattices,” Phys. Rev. B 33, 8360–8372 (1986).
[CrossRef]

D. L. Smith and C. Mailhiot, ““k∙ p theory of semiconductor superlattice electronic structure. I . Formal results,” Phys. Rev. B 33, 8345–8359 (1986).
[CrossRef]

C. Mailhiot and D. L. Smith, “Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices,” Phys. Rev. B 35, 1242–1259 (1987).
[CrossRef]

C. Mailhiot and D. L. Smith, “Effects of compressive uniaxial stress on the electronic structure of GaAs-Ga1-xAlxAs quantum wells,” Phys. Rev. B 36, 2942–2945 (1987).
[CrossRef]

Surf. Sci. (1)

M. Wraback, H. Shen, J. Pamulapati, M. Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, “Femtosecond studies of excitonic optical non-linearities in GaAs/ AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain,” Surf. Sci. 305, 238–242 (1994).
[CrossRef]

Other (2)

Mark L. Biermann and W. S. Rabinovich, “In-plane anisotropy in GaxIn1-xAs/ AlyIn1-yAs quantum wells under tensile, in-plane strain,” unpublished.

W. S. Rabinovich, et. al., “Anisotropic strain in quantum wells via micromachining,” unpublished.

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Figures (4)

Fig. 1
Fig. 1

Interband transition energies as a function of the width of the well under tension. Transition energies do not include exciton binding energies. The width of the compressive well is 26 angstroms. HH1-C1 – circle; HH2-C1 – triangle; LH1-C1 – square; HH1-C2 – open circle; HH2-C2 – open triangle.

Fig. 2
Fig. 2

Squared, interband, optical matrix elements for two polarization directions for HH1-C1 and HH2-C1 transitions as a function of the width of the well under tension. The width of the compressive well is 26 angstroms. HH1-C1 transition: Light is polarized along the x-axis – circles; y-axis – triangles. HH2-C1 transition: Light is polarized along the x-axis – open circles; y-axis – open triangles.

Fig. 3
Fig. 3

Squared, interband, optical matrix elements for two polarization directions for HH1-C2 and HH2-C2 transitions as a function of the width of the well under tension. The width of the compressive well is 26 angstroms. HH1-C2 transition: Light is polarized along the x-axis – circles; y-axis – triangles. HH2-C2 transition: Light is polarized along the x-axis – open circles; y-axis – open triangles.

Fig. 4
Fig. 4

Squared, interband, optical matrix elements for three polarization directions for the LH1-C1 transition as a function of the width of the well under tension. The width of the compressive well is 26 angstroms. Light is polarized along the x-axis – circles; y-axis – triangles; z-axis – squares.

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