Abstract

We present operating and lifetest data on 795 and 808 nm bars with aluminum-free active regions. Conductively cooled bars operate reliably at CW power outputs of 40 W, and have high efficiency, low beam divergence, and narrow spectra. Record CW powers of 115 W CW are demonstrated at 795 nm for 30% fill-factor bars mounted on microchannel coolers. We also review QCW performance and lifetime for higher fill-factor bars processed on identical epitaxial material.

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References

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  1. S. L. Yellen et al., IEEE J. Quantum Electron. QE-29, 2058 (1993).
    [CrossRef]
  2. E. Yablonovitch et al., Appl. Phys. Lett. 60, 371 (1992).
    [CrossRef]
  3. J. K. Wade, L. J. Mawst, D. Botez, R. F. Nabiev, M. Jansen and J. A. Morris, Appl. Phys. Lett, 72, 4 (1998).
    [CrossRef]
  4. J. K. Wade, L. J. Mawst, D. Botez, M. Jansen, F. Fang and R. F. Nabiev, Appl. Phys. Lett, 70, 149 (1997).
    [CrossRef]
  5. M. Toivonen, A. Salokatve, M. Jalonen, J. Nappi, H. Asonen, M. Pesa and R. Murison, Electron Lett. 31, 32 (1995).
    [CrossRef]
  6. M. Jansen, H. Asonen, P. Bournes, P. Corvini, F. Fang, M. Finander, R. Nabiev, J. Nappi, K. Rakennus and A. Salokatve, "40W CW Operation of 808nm Bars," CLEO Postdeadline Paper CPD15-2, (1998).
  7. R. F. Nabiev, J. Aarik, H. Asonen, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Jansen, J. Nappi, K. Rakennus and A. Salokatve, "Tensile-Strained Single Quantum Well 808 nm Lasers with Al-Free Active Regions and InGaAlP Cladding Layers Grown by Solid Source MBE," International Semiconductor Laser Conference, Japan, paper TuA1 (1998).
  8. P. Bournes, H. Asonen, F. Fang, M. Finander, M. Hmelar, M Jansen, R. F. Nabiev, J. Nappi, K. Rakkenus and A. Salokatve, "795 nm-Emitting 40 W CW High-Temperature Laser Diode Bars with Al -Free Active Area," LEOS annual meeting, Orlando, USA, paper WQ2, (1998).

Other (8)

S. L. Yellen et al., IEEE J. Quantum Electron. QE-29, 2058 (1993).
[CrossRef]

E. Yablonovitch et al., Appl. Phys. Lett. 60, 371 (1992).
[CrossRef]

J. K. Wade, L. J. Mawst, D. Botez, R. F. Nabiev, M. Jansen and J. A. Morris, Appl. Phys. Lett, 72, 4 (1998).
[CrossRef]

J. K. Wade, L. J. Mawst, D. Botez, M. Jansen, F. Fang and R. F. Nabiev, Appl. Phys. Lett, 70, 149 (1997).
[CrossRef]

M. Toivonen, A. Salokatve, M. Jalonen, J. Nappi, H. Asonen, M. Pesa and R. Murison, Electron Lett. 31, 32 (1995).
[CrossRef]

M. Jansen, H. Asonen, P. Bournes, P. Corvini, F. Fang, M. Finander, R. Nabiev, J. Nappi, K. Rakennus and A. Salokatve, "40W CW Operation of 808nm Bars," CLEO Postdeadline Paper CPD15-2, (1998).

R. F. Nabiev, J. Aarik, H. Asonen, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Jansen, J. Nappi, K. Rakennus and A. Salokatve, "Tensile-Strained Single Quantum Well 808 nm Lasers with Al-Free Active Regions and InGaAlP Cladding Layers Grown by Solid Source MBE," International Semiconductor Laser Conference, Japan, paper TuA1 (1998).

P. Bournes, H. Asonen, F. Fang, M. Finander, M. Hmelar, M Jansen, R. F. Nabiev, J. Nappi, K. Rakkenus and A. Salokatve, "795 nm-Emitting 40 W CW High-Temperature Laser Diode Bars with Al -Free Active Area," LEOS annual meeting, Orlando, USA, paper WQ2, (1998).

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Figures (12)

Fig. 1.
Fig. 1.

Schematic diagram of AAA structure for a single laser diode emitter

Fig. 2.
Fig. 2.

Schematic diagram of 30% fill-factor bar and conductively cooled heatsink

Fig. 3.
Fig. 3.

Power vs. current characteristics of 40 W 808 nm bars

Fig. 4.
Fig. 4.

Performance of 40 W CW bars as a function of ambient temperature (a) Power vs. current (b) Power conversion efficiency vs. current

Fig. 5.
Fig. 5.

Lifetime of 40 W, 808 nm bars

Fig. 6.
Fig. 6.

Forty W, 795-nm bar performance (a) Power and power conversion efficiency vs. current (b) Threshold current and slope efficiency as functions of temperature

Fig. 7.
Fig. 7.

Performance of 40 W, 795 nm bars for several temperatures (a) Power vs. current (b) Power conversion efficiency vs. current

Fig. 8.
Fig. 8.

Spectral shift as a function of temperature for 795 nm bars operating at 40W

Fig. 9.
Fig. 9.

Reliability data for 40 W, 795 nm bars at 25 °C

Fig. 10.
Fig. 10.

795 nm bar CW power and power conversion efficiency as a function of applied current

Fig. 11.
Fig. 11.

Power vs. current characteristics of QCW bars (a) 50% fill-factor at 10% duty cycle (b) 90% fill-factor bars at 1% duty cycle

Fig. 12.
Fig. 12.

90% fill-factor bars lifetest data (200-μsec pulses, 25% duty cycle)

Equations (2)

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I th ( T ) = I th ( 300 ° K ) exp ( T 300 ° K ) / T 0
η ( T ) = η ( 300 ° K ) exp ( T 300 ° K ) / T 1

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