Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Journal Home About Issues in Progress Current Issue All Issues Feature Issues

Fast thermo-optical modulators with doped-silicon heaters operating at 2 μm

Chuyu Zhong, Hui Ma, Chunlei Sun, Maoliang Wei, Yuting Ye, Bo Tang, Peng Zhang, Ruonan Liu, Junying Li, Lan Li, and Hongtao Lin

Open Access Open Access

Abstract

The 2-μm-waveband has been recognized as a potential telecommunication window for next-generation low-loss, low-latency optical communication. Thermo-optic (TO) modulators and switches, which are essential building blocks in a large-scale integrated photonic circuit, and their performances directly affect the energy consumption and reconfiguration time of an on-chip photonic system. Previous TO modulation based on metallic heaters at 2-μm-waveband suffer from slow response time and high power consumption. In this paper, high-performance thermo-optical Mach–Zehnder interferometer and ring resonator modulators operating at 2-μm-waveband were demonstrated. By embedding a doped silicon (p++-p-p++) junction into the waveguide, our devices reached a record modulation efficiency of 0.17 nm/mW for Mach–Zehnder interferometer based modulator and its rise/fall time was 3.49 μs/3.46 μs which has been the fastest response time reported in a 2-μm-waveband TO devices so far. And a lowest Pπ power of 3.33 mW among reported 2-μm TO devices was achieved for a ring resonator-based modulator.

© 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article

Corrections

Chuyu Zhong, Hui Ma, Chunlei Sun, Maoliang Wei, Yuting Ye, Bo Tang, Peng Zhang, Ruonan Liu, Junying Li, Lan Li, and Hongtao Lin, "Fast thermo-optical modulators with doped-silicon heaters operating at 2 µm: erratum," Opt. Express 30, 10084-10086 (2022)
https://opg.optica.org/oe/abstract.cfm?uri=oe-30-6-10084
More Like This
Fast thermo-optical modulators with doped-silicon heaters operating at 2 µm: erratum

Chuyu Zhong, Hui Ma, Chunlei Sun, Maoliang Wei, Yuting Ye, Bo Tang, Peng Zhang, Ruonan Liu, Junying Li, Lan Li, and Hongtao Lin
Opt. Express 30(6) 10084-10086 (2022)

Compact thermo-optic MZI switch in silicon-on-insulator using direct carrier injection

Manuel Mendez-Astudillo, Masaki Okamoto, Yoshiaki Ito, and Tomohiro Kita
Opt. Express 27(2) 899-906 (2019)

Optimization of thermo-optic phase-shifter design and mitigation of thermal crosstalk on the SOI platform

Maxime Jacques, Alireza Samani, Eslam El-Fiky, David Patel, Zhenping Xing, and David V. Plant
Opt. Express 27(8) 10456-10471 (2019)

View More...

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)
Fig. 1.
Fig. 1. (a) Schematic cross-section of the p++-p-p++ structure. (b) Simulated temperature distribution in the p-type-doped heater at a driving voltage of 5.8 V. (c) Simulated temperature in the waveguide under different voltages. (d) Voltage-dependent effective refractive index change and phase shift. The dashed line denotes the π-shift position.

Download Full Size | PDF

Fig. 2.
Fig. 2. Schematic of the measurement system: a fiber coupling setup is used for light coupling. DAQ: data acquisition equipment, PC: polarization controller, DUT: device under test, AWG: arbitrary waveform generator, PD: photodetector, PMT: photomultiplier tube, PFA: pulse forming amplifier.

Download Full Size | PDF

Fig. 3.
Fig. 3. (a) The structure of the MZI-based TO modulator. (b) Normalized transmission spectra of the modulator under varying applied voltages. (c) Measured Current-Voltage (I-V, light-blue) and Transmission-Power (O-P, red) curves of the p++-p-p++ junction in the modulator. (d) The wavelength shift of the interference dip of the modulator with the heating power.

Download Full Size | PDF

Fig. 4.
Fig. 4. Time response of the MZI-based 2-μm-waveband TO modulator.

Download Full Size | PDF

Fig. 5.
Fig. 5. (a) The structure of the MRR-based TO with p-doped heaters. (b) Normalized transmission spectra of the modulator under varying applied voltage. (c) I-V and O-P curves of the p++-p-p++ junction in the modulator. (d) Resonant peak shift of the modulator with the heating power.

Download Full Size | PDF

Fig. 6.
Fig. 6. Time response of the MRR-based TO modulator.

Download Full Size | PDF

Tables (1)

Tables Icon

Table 1. Performance of Some Reported Silicon TO Modulation Devices

View Table
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use