Abstract

Shaping the topography of an atomically thin film is a novel way to engineer the optoelectronic performances of an ideal surface. In this letter, we study the photoluminescence characters of a WSe2 monolayer of spiky nanostructures and rippled morphology, which are induced during the transfer process of monolayer to a Bi2Se3 flake. Photo-excited excitons are trapped by these nanostructures, resulting in energy redshifts up to 150 meV at low temperature. We study the polarization degrees of the corresponding radiation signals and the polarization directions. Interestingly, the appearance features of monolayer correlates with the optical polarization property of the photoluminescence. Our work attracts insight to the relevance between surface topography and the dipole polarization on an ideal surface.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref] [PubMed]
  25. A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
    [Crossref] [PubMed]
  26. S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in mono-and bilayer WSe2,” Nano Lett. 15(11), 7567–7573 (2015).
    [Crossref] [PubMed]
  27. H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
    [Crossref]
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    [Crossref] [PubMed]
  29. X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
    [Crossref] [PubMed]
  30. S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
    [Crossref] [PubMed]
  31. A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
    [Crossref] [PubMed]

2019 (1)

T. Liu, S. Liu, K. H. Tu, H. Schmidt, L. Chu, D. Xiang, J. Martin, G. Eda, C. A. Ross, and S. Garaj, “Crested two-dimensional transistors,” Nat. Nanotechnol. 14(3), 223–226 (2019).
[Crossref] [PubMed]

2017 (4)

C. Martella, C. Mennucci, E. Cinquanta, A. Lamperti, E. Cappelluti, F. Buatier de Mongeot, and A. Molle, “Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates,” Adv. Mater. 29(19), 1605785 (2017).
[Crossref] [PubMed]

C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
[Crossref] [PubMed]

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

2016 (5)

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

W. Li and J. Li, “Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers,” Nat. Commun. 7(1), 10843 (2016).
[Crossref] [PubMed]

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

K. D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid tip-enhanced nanospectroscopy and nanoimaging of monolayer WSe2 with local strain control,” Nano Lett. 16(4), 2621–2627 (2016).
[Crossref] [PubMed]

C. Chakraborty, K. M. Goodfellow, and A. Nick Vamivakas, “Localized emission from defects in MoSe2 layers,” Opt. Mater. Express 6(6), 2081–2087 (2016).
[Crossref]

2015 (5)

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2.,” Nat. Nanotechnol. 10(6), 491–496 (2015).
[Crossref] [PubMed]

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nat. Nanotechnol. 10(6), 507–511 (2015).
[Crossref] [PubMed]

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in mono-and bilayer WSe2,” Nano Lett. 15(11), 7567–7573 (2015).
[Crossref] [PubMed]

2014 (4)

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. van der Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Mater. 1(1), 011002 (2014).

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

2013 (9)

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

K. He, C. Poole, K. F. Mak, and J. Shan, “Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.,” Nano Lett. 13(6), 2931–2936 (2013).
[Crossref] [PubMed]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap engineering of strained monolayer and bilayer MoS2.,” Nano Lett. 13(8), 3626–3630 (2013).
[Crossref] [PubMed]

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

2012 (1)

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

2011 (1)

H. M. Benia, C. Lin, K. Kern, and C. R. Ast, “Reactive chemical doping of the Bi2Se3 topological insulator,” Phys. Rev. Lett. 107(17), 177602 (2011).
[Crossref] [PubMed]

2010 (1)

W. Zhang, R. Yu, H. J. Zhang, X. Dai, and Z. Fang, “First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3,” New J. Phys. 12(6), 065013 (2010).
[Crossref]

Aivazian, G.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Allain, A. V.

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2.,” Nat. Nanotechnol. 10(6), 491–496 (2015).
[Crossref] [PubMed]

Amand, T.

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Arora, A.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Ast, C. R.

H. M. Benia, C. Lin, K. Kern, and C. R. Ast, “Reactive chemical doping of the Bi2Se3 topological insulator,” Phys. Rev. Lett. 107(17), 177602 (2011).
[Crossref] [PubMed]

Ataca, C.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

Atatüre, M.

C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

Balocchi, A.

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

Barbone, M.

C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

Beams, R.

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nat. Nanotechnol. 10(6), 507–511 (2015).
[Crossref] [PubMed]

Benia, H. M.

H. M. Benia, C. Lin, K. Kern, and C. R. Ast, “Reactive chemical doping of the Bi2Se3 topological insulator,” Phys. Rev. Lett. 107(17), 177602 (2011).
[Crossref] [PubMed]

Bhattacharya, A.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Bolotin, K. I.

H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap engineering of strained monolayer and bilayer MoS2.,” Nano Lett. 13(8), 3626–3630 (2013).
[Crossref] [PubMed]

Bouet, L.

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

Bratschitsch, R.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

Buatier de Mongeot, F.

C. Martella, C. Mennucci, E. Cinquanta, A. Lamperti, E. Cappelluti, F. Buatier de Mongeot, and A. Molle, “Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates,” Adv. Mater. 29(19), 1605785 (2017).
[Crossref] [PubMed]

Buscema, M.

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

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S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in mono-and bilayer WSe2,” Nano Lett. 15(11), 7567–7573 (2015).
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S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
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C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
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H. M. Benia, C. Lin, K. Kern, and C. R. Ast, “Reactive chemical doping of the Bi2Se3 topological insulator,” Phys. Rev. Lett. 107(17), 177602 (2011).
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K. D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid tip-enhanced nanospectroscopy and nanoimaging of monolayer WSe2 with local strain control,” Nano Lett. 16(4), 2621–2627 (2016).
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C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nat. Nanotechnol. 10(6), 507–511 (2015).
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S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in mono-and bilayer WSe2,” Nano Lett. 15(11), 7567–7573 (2015).
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K. He, C. Poole, K. F. Mak, and J. Shan, “Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.,” Nano Lett. 13(6), 2931–2936 (2013).
[Crossref] [PubMed]

Mandrus, D. G.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Marie, X.

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Martella, C.

C. Martella, C. Mennucci, E. Cinquanta, A. Lamperti, E. Cappelluti, F. Buatier de Mongeot, and A. Molle, “Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates,” Adv. Mater. 29(19), 1605785 (2017).
[Crossref] [PubMed]

Martin, J.

T. Liu, S. Liu, K. H. Tu, H. Schmidt, L. Chu, D. Xiang, J. Martin, G. Eda, C. A. Ross, and S. Garaj, “Crested two-dimensional transistors,” Nat. Nanotechnol. 14(3), 223–226 (2019).
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C. Martella, C. Mennucci, E. Cinquanta, A. Lamperti, E. Cappelluti, F. Buatier de Mongeot, and A. Molle, “Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates,” Adv. Mater. 29(19), 1605785 (2017).
[Crossref] [PubMed]

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A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

Molenaar, R.

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. van der Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Mater. 1(1), 011002 (2014).

Molle, A.

C. Martella, C. Mennucci, E. Cinquanta, A. Lamperti, E. Cappelluti, F. Buatier de Mongeot, and A. Molle, “Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates,” Adv. Mater. 29(19), 1605785 (2017).
[Crossref] [PubMed]

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C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

Nick Vamivakas, A.

Noky, J.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Ogletree, F.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

Ohlberg, D.

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

Ott, A. K.

C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

Palacios-Berraquero, C.

C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

Pantelides, S. T.

H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap engineering of strained monolayer and bilayer MoS2.,” Nano Lett. 13(8), 3626–3630 (2013).
[Crossref] [PubMed]

Park, K. D.

K. D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid tip-enhanced nanospectroscopy and nanoimaging of monolayer WSe2 with local strain control,” Nano Lett. 16(4), 2621–2627 (2016).
[Crossref] [PubMed]

Peeters, F.

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

Peeters, F. M.

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

Poole, C.

K. He, C. Poole, K. F. Mak, and J. Shan, “Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.,” Nano Lett. 13(6), 2931–2936 (2013).
[Crossref] [PubMed]

Qiao, X.

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Raghunathanan, R.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

Raschke, M. B.

K. D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid tip-enhanced nanospectroscopy and nanoimaging of monolayer WSe2 with local strain control,” Nano Lett. 16(4), 2621–2627 (2016).
[Crossref] [PubMed]

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J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
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A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Roldán, R.

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

Ross, C. A.

T. Liu, S. Liu, K. H. Tu, H. Schmidt, L. Chu, D. Xiang, J. Martin, G. Eda, C. A. Ross, and S. Garaj, “Crested two-dimensional transistors,” Nat. Nanotechnol. 14(3), 223–226 (2019).
[Crossref] [PubMed]

Ross, J. S.

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Sahin, H.

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

Schaibley, J. R.

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

Schmidt, H.

T. Liu, S. Liu, K. H. Tu, H. Schmidt, L. Chu, D. Xiang, J. Martin, G. Eda, C. A. Ross, and S. Garaj, “Crested two-dimensional transistors,” Nat. Nanotechnol. 14(3), 223–226 (2019).
[Crossref] [PubMed]

Schmidt, R.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

Schneider, R.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

Seyler, K. L.

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

Shan, J.

K. He, C. Poole, K. F. Mak, and J. Shan, “Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.,” Nano Lett. 13(6), 2931–2936 (2013).
[Crossref] [PubMed]

Shan, Y.

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
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Shen, J.

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
[Crossref] [PubMed]

Shi, W.

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

Sidler, M.

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2.,” Nat. Nanotechnol. 10(6), 491–496 (2015).
[Crossref] [PubMed]

Singh, V.

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. van der Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Mater. 1(1), 011002 (2014).

Srivastava, A.

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2.,” Nat. Nanotechnol. 10(6), 491–496 (2015).
[Crossref] [PubMed]

Steele, G. A.

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. van der Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Mater. 1(1), 011002 (2014).

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

Stiehm, T.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Suh, J.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

Tan, P.

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Tan, P.-H.

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

Tongay, S.

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

Tonndorf, P.

Tran, V.

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

Tu, K. H.

T. Liu, S. Liu, K. H. Tu, H. Schmidt, L. Chu, D. Xiang, J. Martin, G. Eda, C. A. Ross, and S. Garaj, “Crested two-dimensional transistors,” Nat. Nanotechnol. 14(3), 223–226 (2019).
[Crossref] [PubMed]

Urbaszek, B.

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Vamivakas, A. N.

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nat. Nanotechnol. 10(6), 507–511 (2015).
[Crossref] [PubMed]

van der Zant, H. S. J.

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2(4), 347–352 (2015).
[Crossref]

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. van der Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Mater. 1(1), 011002 (2014).

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
[Crossref] [PubMed]

Vidal, M.

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

Wang, B.

H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap engineering of strained monolayer and bilayer MoS2.,” Nano Lett. 13(8), 3626–3630 (2013).
[Crossref] [PubMed]

Wang, G.

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Wang, H.

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

Wang, X.

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

Wu, J.

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

Wu, J.-B.

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

Wu, S.

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Wu, W.

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

Wu, X.

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
[Crossref] [PubMed]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Xia, F.

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

Xiang, D.

T. Liu, S. Liu, K. H. Tu, H. Schmidt, L. Chu, D. Xiang, J. Martin, G. Eda, C. A. Ross, and S. Garaj, “Crested two-dimensional transistors,” Nat. Nanotechnol. 14(3), 223–226 (2019).
[Crossref] [PubMed]

Xiao, D.

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Xiong, S.

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
[Crossref] [PubMed]

Xu, X.

K. D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid tip-enhanced nanospectroscopy and nanoimaging of monolayer WSe2 with local strain control,” Nano Lett. 16(4), 2621–2627 (2016).
[Crossref] [PubMed]

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Yan, J.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Yan, T.

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

Yang, L.

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

Yao, W.

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Yoon, D.

C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

Yu, H.

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Yu, R.

W. Zhang, R. Yu, H. J. Zhang, X. Dai, and Z. Fang, “First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3,” New J. Phys. 12(6), 065013 (2010).
[Crossref]

Zeng, H.

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

Zhang, H. J.

W. Zhang, R. Yu, H. J. Zhang, X. Dai, and Z. Fang, “First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3,” New J. Phys. 12(6), 065013 (2010).
[Crossref]

Zhang, J.

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
[Crossref] [PubMed]

Zhang, W.

W. Zhang, R. Yu, H. J. Zhang, X. Dai, and Z. Fang, “First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3,” New J. Phys. 12(6), 065013 (2010).
[Crossref]

Zhang, X.

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Zhao, B.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
[Crossref] [PubMed]

Zhao, H.

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

Zhou, J.

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

Zhu, C.

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

Zhu, X.

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
[Crossref] [PubMed]

Ziegler, J. I.

H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap engineering of strained monolayer and bilayer MoS2.,” Nano Lett. 13(8), 3626–3630 (2013).
[Crossref] [PubMed]

2D Mater. (1)

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. van der Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Mater. 1(1), 011002 (2014).

Adv. Mater. (1)

C. Martella, C. Mennucci, E. Cinquanta, A. Lamperti, E. Cappelluti, F. Buatier de Mongeot, and A. Molle, “Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates,” Adv. Mater. 29(19), 1605785 (2017).
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Adv. Opt. Mater. (1)

J.-B. Wu, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu, H. Wang, and P.-H. Tan, “Monolayer molybdenum disulfide nanoribbons with high optical anisotropy,” Adv. Opt. Mater. 4(5), 756–762 (2016).
[Crossref]

Appl. Phys. Lett. (1)

T. Yan, X. Qiao, X. Liu, P. Tan, and X. Zhang, “Photoluminescence properties and exciton dynamics in monolayer WSe2,” Appl. Phys. Lett. 105(10), 101901 (2014).
[Crossref]

J. Phys. Chem. Lett. (1)

S. Wu, Y. Shan, J. Guo, L. Liu, X. Liu, X. Zhu, J. Zhang, J. Shen, S. Xiong, and X. Wu, “Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS2,” J. Phys. Chem. Lett. 8(12), 2719–2724 (2017).
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Nano Lett. (7)

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulklike 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
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A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
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K. He, C. Poole, K. F. Mak, and J. Shan, “Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.,” Nano Lett. 13(6), 2931–2936 (2013).
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H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap engineering of strained monolayer and bilayer MoS2.,” Nano Lett. 13(8), 3626–3630 (2013).
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A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, “Local strain engineering in atomically thin MoS2.,” Nano Lett. 13(11), 5361–5366 (2013).
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S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in mono-and bilayer WSe2,” Nano Lett. 15(11), 7567–7573 (2015).
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K. D. Park, O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid tip-enhanced nanospectroscopy and nanoimaging of monolayer WSe2 with local strain control,” Nano Lett. 16(4), 2621–2627 (2016).
[Crossref] [PubMed]

Nat. Commun. (2)

C. Palacios-Berraquero, D. M. Kara, A. R.-P. Montblanch, M. Barbone, P. Latawiec, D. Yoon, A. K. Ott, M. Loncar, A. C. Ferrari, and M. Atatüre, “Large-scale quantum-emitter arrays in atomically thin semiconductors,” Nat. Commun. 8, 15093 (2017).
[Crossref] [PubMed]

W. Li and J. Li, “Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers,” Nat. Commun. 7(1), 10843 (2016).
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X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus,” Nat. Nanotechnol. 10(6), 517–521 (2015).
[Crossref] [PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol. 7(8), 490–493 (2012).
[Crossref] [PubMed]

T. Liu, S. Liu, K. H. Tu, H. Schmidt, L. Chu, D. Xiang, J. Martin, G. Eda, C. A. Ross, and S. Garaj, “Crested two-dimensional transistors,” Nat. Nanotechnol. 14(3), 223–226 (2019).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer WSe2.,” Nat. Nanotechnol. 8(9), 634–638 (2013).
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A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2.,” Nat. Nanotechnol. 10(6), 491–496 (2015).
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C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nat. Nanotechnol. 10(6), 507–511 (2015).
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Nat. Phys. (1)

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

Nat. Rev. Mater. (1)

J. R. Schaibley, H. Yu, G. Clark, P. Rivera, J. S. Ross, K. L. Seyler, W. Yao, and X. Xu, “Valleytronics in 2D materials,” Nat. Rev. Mater. 1(11), 16055 (2016).
[Crossref]

New J. Phys. (1)

W. Zhang, R. Yu, H. J. Zhang, X. Dai, and Z. Fang, “First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3,” New J. Phys. 12(6), 065013 (2010).
[Crossref]

Opt. Mater. Express (1)

Optica (1)

Phys. Rev. B Condens. Matter Mater. Phys. (4)

G. Wang, L. Bouet, D. Lagarde, M. Vidal, A. Balocchi, T. Amand, X. Marie, and B. Urbaszek, “Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 90(7), 075413 (2014).
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H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
[Crossref]

C. Zhu, G. Wang, B. Liu, X. Marie, X. Qiao, X. Zhang, X. Wu, H. Fan, P. Tan, T. Amand, and B. Urbaszek, “Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2,” Phys. Rev. B Condens. Matter Mater. Phys. 88(12), 121301 (2013).
[Crossref]

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. Peeters, “Anomalous Raman spectra and thickness-dependent electronic properties of WSe2,” Phys. Rev. B Condens. Matter Mater. Phys. 87(16), 165409 (2013).
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H. M. Benia, C. Lin, K. Kern, and C. R. Ast, “Reactive chemical doping of the Bi2Se3 topological insulator,” Phys. Rev. Lett. 107(17), 177602 (2011).
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Sci. Rep. (1)

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Sci. Rep. 3(1), 2657 (2013).
[Crossref] [PubMed]

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Figures (3)

Fig. 1
Fig. 1 (a) Optical micrograph of the sample. The red boxes mark the position measured by atomic force microscope (AFM). (b) A diagram of the sample. (c,e) Overlook and (d,f) high-precision 3D AFM images of the two regions inside the dashed square area of (a), respectively. (g) The PL spectra of the exciting regions that are marked by numbers 1-5 in (d-f). The top one of gray line is a typical spectrum from a WSe2 monolayer on SiO2/Si substrate.
Fig. 2
Fig. 2 (a) Linear polarized PL spectra from the spot 3. The blue (red) one is polarized along 0 ° (90 °) direction. The angle direction axis is at the lower-left corner of the image (c), which is consistent with the angle axis for the polar plots (b,i,j). The two lines in polar plots (b) show the linearly polarized emission from the adjacent peaks from spot 3 marked by the green dashed rectangles in (a). The black/red polar line presents the data from the peak marked by S1 = 68% / 87%. (c) Zooming of numbered spiky regions in Fig. 1(c). (d) and (e) are the 3D images of the regions in (c) (bound by black dashed lines). (f) A part view of numbered spiky region in Fig. 1(e). (g) and (h) are the 3D images of the regions (bound by black dashed lines) in (f). The two lines in polar plots (i) show the linearly polarized emission from the two peaks marked by the red dashed rectangles in Fig. 1(g). The blue/red polar line presents the data from spot 2/3. The two lines in polar plots (j) show the linearly polarized emission from the two peaks marked by the blue dashed rectangles in Fig. 1(g). The green/yellow polar line presents the data from spot 4/5.
Fig. 3
Fig. 3 Temperature-dependent radiations from strain-trapped excitons. The excitation region is corresponding to the spot 2 in Fig. 1(g). The PL signals of the strain-trapped excitons quench as the increasing of the temperature.

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