Abstract

We report the first optical parametric oscillator synchronously pumped by a SESAM modelocked vertical external-cavity surface-emitting laser (VECSEL). As a nonlinear medium, we use a periodically poled MgO:PPLN crystal. The VECSEL operates at a wavelength of 982 nm and a repetition rate of 198 MHz. The pump radiation is converted to signal and idler wavelengths tunable in the ranges of 1.4-1.8 µm and 2.2-3.5 μm, respectively, simply by a change of the poling period and crystal temperature. The signal pulses have a duration between 2 ps to 4 ps and an average output power up to 100 mW.

© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2017 (2)

M. Guina, A. Rantamäki, and A. Härkönen, “Optically pumped VECSELs: review of technology and progress,” J. Phys. Appl. Phys. 50(38), 383001 (2017).

T. Petersen, J. D. Zuegel, and J. Bromage, “High-average-power, 2-μm femtosecond optical parametric oscillator synchronously pumped by a thin-disk, mode-locked laser,” Opt. Express 25(8), 8840–8844 (2017).
[PubMed]

2016 (4)

D. Waldburger, S. M. Link, M. Mangold, C. G. E. Alfieri, E. Gini, M. Golling, B. W. Tilma, and U. Keller, “High-power 100 fs semiconductor disk lasers,” Optica 3(8), 844–852 (2016).

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch, “Mode-locked semiconductor disk lasers,” Adv. Opt. Photonics 8(3), 370–400 (2016).

A. Rahimi-Iman, “Recent advances in VECSELs,” J. Opt. 18(9), 093003 (2016).

2015 (2)

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

N. Hempler, B. Bialkowski, C. J. Hamilton, G. T. Maker, and G. P. A. Malcolm, “Development and commercialization of mode-locked VECSELs,” Proc. SPIE 9349, 93490K (2015).

2014 (1)

2013 (2)

2012 (5)

N. Leindecker, A. Marandi, R. L. Byer, K. L. Vodopyanov, J. Jiang, I. Hartl, M. Fermann, and P. G. Schunemann, “Octave-spanning ultrafast OPO with 2.6-6.1 µm instantaneous bandwidth pumped by femtosecond Tm-fiber laser,” Opt. Express 20(7), 7046–7053 (2012).
[PubMed]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express 20(25), 27915–27921 (2012).
[PubMed]

A. Rantamäki, A. Chamorovskiy, J. Lyytikäinen, and O. Okhotnikov, “4.6-W Single Frequency Semiconductor Disk Laser With <75-kHz Linewidth,” IEEE Photonics Technol. Lett. 24(16), 1378–1380 (2012).

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).

2011 (1)

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 98(7), 071103 (2011).

2010 (1)

2009 (2)

2008 (1)

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

2007 (3)

M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, “Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength,” Appl. Phys. Lett. 91(15), 151102 (2007).

J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

J. H. Sun, B. J. S. Gale, and D. T. Reid, “Composite frequency comb spanning 0.4-2.4 μm from a phase-controlled femtosecond Ti:sapphire laser and synchronously pumped optical parametric oscillator,” Opt. Lett. 32(11), 1414–1416 (2007).
[PubMed]

2006 (2)

S.-H. Park and H. Jeon, “Microchip-Type InGaN Vertical External-Cavity Surface-Emitting Laser,” Opt. Rev. 13(1), 20–23 (2006).

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

2002 (1)

2000 (1)

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

1997 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).

1996 (1)

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

1965 (1)

J. A. Giordmaine and R. C. Miller, “Tunable Coherent Parametric Oscillation in LiNbO3 at Optical Frequencies,” Phys. Rev. Lett. 14(24), 973–976 (1965).

Adler, F.

Alfieri, C. G. E.

Anthon, D. W.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

Arnold, M.

M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, “Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength,” Appl. Phys. Lett. 91(15), 151102 (2007).

Aus der Au, J.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Bai, Y.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Beere, H. E.

Behfar, K.

M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, “Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength,” Appl. Phys. Lett. 91(15), 151102 (2007).

Bellancourt, A.-R.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

Berger, J. D.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

Bialkowski, B.

N. Hempler, B. Bialkowski, C. J. Hamilton, G. T. Maker, and G. P. A. Malcolm, “Development and commercialization of mode-locked VECSELs,” Proc. SPIE 9349, 93490K (2015).

Braun, B.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Bromage, J.

Burns, D.

Butkus, M.

Byer, R. L.

Caprara, A.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

Chamorovskiy, A.

A. Rantamäki, A. Chamorovskiy, J. Lyytikäinen, and O. Okhotnikov, “4.6-W Single Frequency Semiconductor Disk Laser With <75-kHz Linewidth,” IEEE Photonics Technol. Lett. 24(16), 1378–1380 (2012).

Charles, J.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Chilla, J.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

Chilla, J. L.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

Cossel, K. C.

Dhanjal, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

Dunn, M. H.

Ebling, D.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

Ebrahimzadeh, M.

Ebrahim-Zadeh, M.

Erneux, T.

Esteban-Martin, A.

Fedorova, K. A.

M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch, “Mode-locked semiconductor disk lasers,” Adv. Opt. Photonics 8(3), 370–400 (2016).

Felder, F.

M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, “Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength,” Appl. Phys. Lett. 91(15), 151102 (2007).

Fermann, M.

Fermann, M. E.

Fischer, M.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Fluck, R.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Forchel, A.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Gaafar, M. A.

M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch, “Mode-locked semiconductor disk lasers,” Adv. Opt. Photonics 8(3), 370–400 (2016).

Gale, B. J. S.

Gini, E.

D. Waldburger, S. M. Link, M. Mangold, C. G. E. Alfieri, E. Gini, M. Golling, B. W. Tilma, and U. Keller, “High-power 100 fs semiconductor disk lasers,” Optica 3(8), 844–852 (2016).

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

Giordmaine, J. A.

J. A. Giordmaine and R. C. Miller, “Tunable Coherent Parametric Oscillation in LiNbO3 at Optical Frequencies,” Phys. Rev. Lett. 14(24), 973–976 (1965).

Golling, M.

Govorkov, S. V.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

Griebner, U.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 98(7), 071103 (2011).

Guina, M.

M. Guina, A. Rantamäki, and A. Härkönen, “Optically pumped VECSELs: review of technology and progress,” J. Phys. Appl. Phys. 50(38), 383001 (2017).

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).

Hamilton, C. J.

N. Hempler, B. Bialkowski, C. J. Hamilton, G. T. Maker, and G. P. A. Malcolm, “Development and commercialization of mode-locked VECSELs,” Proc. SPIE 9349, 93490K (2015).

M. Butkus, E. A. Viktorov, T. Erneux, C. J. Hamilton, G. Maker, G. P. A. Malcolm, and E. U. Rafailov, “85.7 MHz repetition rate mode-locked semiconductor disk laser: fundamental and soliton bound states,” Opt. Express 21(21), 25526–25531 (2013).
[PubMed]

Häring, R.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

Härkönen, A.

M. Guina, A. Rantamäki, and A. Härkönen, “Optically pumped VECSELs: review of technology and progress,” J. Phys. Appl. Phys. 50(38), 383001 (2017).

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Hartl, I.

Heinen, B.

Hempler, N.

N. Hempler, B. Bialkowski, C. J. Hamilton, G. T. Maker, and G. P. A. Malcolm, “Development and commercialization of mode-locked VECSELs,” Proc. SPIE 9349, 93490K (2015).

Hoffmann, M.

Hönninger, C.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Hoogland, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

Hopkins, J.-M.

Hoyt, C. W.

Hümmer, M.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Hyland, P.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Jeon, H.

S.-H. Park and H. Jeon, “Microchip-Type InGaN Vertical External-Cavity Surface-Emitting Laser,” Opt. Rev. 13(1), 20–23 (2006).

Jiang, J.

Jung, I. D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Kärtner, F. X.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Keller, U.

D. Waldburger, S. M. Link, M. Mangold, C. G. E. Alfieri, E. Gini, M. Golling, B. W. Tilma, and U. Keller, “High-power 100 fs semiconductor disk lasers,” Optica 3(8), 844–852 (2016).

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express 20(25), 27915–27921 (2012).
[PubMed]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Klenner, A.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

Klopp, P.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 98(7), 071103 (2011).

Koch, M.

M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch, “Mode-locked semiconductor disk lasers,” Adv. Opt. Photonics 8(3), 370–400 (2016).

F. Zhang, B. Heinen, M. Wichmann, C. Möller, B. Kunert, A. Rahimi-Iman, W. Stolz, and M. Koch, “A 23-watt single-frequency vertical-external-cavity surface-emitting laser,” Opt. Express 22(11), 12817–12822 (2014).
[PubMed]

Koch, S. W.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).

Koeth, J.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Kokabee, O.

Kopf, D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Kunert, B.

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).

Lehnhardt, T.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Leindecker, N.

Lepert, A.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Lepert, A. Y.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

Lin, Y.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Link, S. M.

D. Waldburger, S. M. Link, M. Mangold, C. G. E. Alfieri, E. Gini, M. Golling, B. W. Tilma, and U. Keller, “High-power 100 fs semiconductor disk lasers,” Optica 3(8), 844–852 (2016).

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

Lorenser, D.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

Lyytikäinen, J.

A. Rantamäki, A. Chamorovskiy, J. Lyytikäinen, and O. Okhotnikov, “4.6-W Single Frequency Semiconductor Disk Laser With <75-kHz Linewidth,” IEEE Photonics Technol. Lett. 24(16), 1378–1380 (2012).

Maas, D. J. H. C.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

Maker, G.

Maker, G. T.

N. Hempler, B. Bialkowski, C. J. Hamilton, G. T. Maker, and G. P. A. Malcolm, “Development and commercialization of mode-locked VECSELs,” Proc. SPIE 9349, 93490K (2015).

Malcolm, G. P. A.

N. Hempler, B. Bialkowski, C. J. Hamilton, G. T. Maker, and G. P. A. Malcolm, “Development and commercialization of mode-locked VECSELs,” Proc. SPIE 9349, 93490K (2015).

M. Butkus, E. A. Viktorov, T. Erneux, C. J. Hamilton, G. Maker, G. P. A. Malcolm, and E. U. Rafailov, “85.7 MHz repetition rate mode-locked semiconductor disk laser: fundamental and soliton bound states,” Opt. Express 21(21), 25526–25531 (2013).
[PubMed]

Mangold, M.

Marandi, A.

Matuschek, N.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Mayer, A. S.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

Mefferd, W.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

Miller, R. C.

J. A. Giordmaine and R. C. Miller, “Tunable Coherent Parametric Oscillation in LiNbO3 at Optical Frequencies,” Phys. Rev. Lett. 14(24), 973–976 (1965).

Möller, C.

Moloney, J. V.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).

Morier-Genoud, F.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

Müller, M.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Okhotnikov, O.

A. Rantamäki, A. Chamorovskiy, J. Lyytikäinen, and O. Okhotnikov, “4.6-W Single Frequency Semiconductor Disk Laser With <75-kHz Linewidth,” IEEE Photonics Technol. Lett. 24(16), 1378–1380 (2012).

Okhotnikov, O. G.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Orsila, L.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Pallmann, W. P.

Park, S.-H.

S.-H. Park and H. Jeon, “Microchip-Type InGaN Vertical External-Cavity Surface-Emitting Laser,” Opt. Rev. 13(1), 20–23 (2006).

Paschotta, R.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

Petersen, T.

Rafailov, E. U.

M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch, “Mode-locked semiconductor disk lasers,” Adv. Opt. Photonics 8(3), 370–400 (2016).

M. Butkus, E. A. Viktorov, T. Erneux, C. J. Hamilton, G. Maker, G. P. A. Malcolm, and E. U. Rafailov, “85.7 MHz repetition rate mode-locked semiconductor disk laser: fundamental and soliton bound states,” Opt. Express 21(21), 25526–25531 (2013).
[PubMed]

Rahim, M.

M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, “Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength,” Appl. Phys. Lett. 91(15), 151102 (2007).

Rahimi-Iman, A.

A. Rahimi-Iman, “Recent advances in VECSELs,” J. Opt. 18(9), 093003 (2016).

M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch, “Mode-locked semiconductor disk lasers,” Adv. Opt. Photonics 8(3), 370–400 (2016).

F. Zhang, B. Heinen, M. Wichmann, C. Möller, B. Kunert, A. Rahimi-Iman, W. Stolz, and M. Koch, “A 23-watt single-frequency vertical-external-cavity surface-emitting laser,” Opt. Express 22(11), 12817–12822 (2014).
[PubMed]

Rantamäki, A.

M. Guina, A. Rantamäki, and A. Härkönen, “Optically pumped VECSELs: review of technology and progress,” J. Phys. Appl. Phys. 50(38), 383001 (2017).

A. Rantamäki, A. Chamorovskiy, J. Lyytikäinen, and O. Okhotnikov, “4.6-W Single Frequency Semiconductor Disk Laser With <75-kHz Linewidth,” IEEE Photonics Technol. Lett. 24(16), 1378–1380 (2012).

Rautiainen, J.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Reed, M.

J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

Reid, D. T.

Ritchie, D. A.

Roberts, J. S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

Rössner, K.

A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Rössner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov, “2-μm Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser,” IEEE Photonics Technol. Lett. 20(15), 1332–1334 (2008).

Rudin, B.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

Scheller, M.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).

Scholz, C.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Schunemann, P. G.

Sheik-Bahae, M.

Shu, Q.-Z.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

Sieber, O. D.

Spinelli, L.

J. D. Berger, D. W. Anthon, A. Caprara, J. L. Chilla, S. V. Govorkov, A. Y. Lepert, W. Mefferd, Q.-Z. Shu, and L. Spinelli, “20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm,” Proc. SPIE 8242, 824206 (2012).

J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photonics Technol. Lett. 9(8), 1063–1065 (1997).

Stolz, W.

M. A. Gaafar, A. Rahimi-Iman, K. A. Fedorova, W. Stolz, E. U. Rafailov, and M. Koch, “Mode-locked semiconductor disk lasers,” Adv. Opt. Photonics 8(3), 370–400 (2016).

F. Zhang, B. Heinen, M. Wichmann, C. Möller, B. Kunert, A. Rahimi-Iman, W. Stolz, and M. Koch, “A 23-watt single-frequency vertical-external-cavity surface-emitting laser,” Opt. Express 22(11), 12817–12822 (2014).
[PubMed]

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express 21(2), 1599–1605 (2013).
[PubMed]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).

Stothard, D. J. M.

Südmeyer, T.

Sun, J. H.

Thorpe, M. J.

Tilma, B. W.

Tropper, A. C.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express 21(2), 1599–1605 (2013).
[PubMed]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

Unold, H. J.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

Viktorov, E. A.

Vodopyanov, K. L.

Waldburger, D.

D. Waldburger, S. M. Link, M. Mangold, C. G. E. Alfieri, E. Gini, M. Golling, B. W. Tilma, and U. Keller, “High-power 100 fs semiconductor disk lasers,” Optica 3(8), 844–852 (2016).

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

Wang, T.-L.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).

Weingarten, K. J.

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express 20(25), 27915–27921 (2012).
[PubMed]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

Weiss, E.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

Weyers, M.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 98(7), 071103 (2011).

Wichmann, M.

Wilcox, K. G.

Wisdom, J.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Wittwer, V. J.

Xu, Z.

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

Ye, J.

Zaugg, C. A.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express 20(25), 27915–27921 (2012).
[PubMed]

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Zhou, H.

J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

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P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 98(7), 071103 (2011).

Zuegel, J. D.

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P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 98(7), 071103 (2011).

M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, “Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength,” Appl. Phys. Lett. 91(15), 151102 (2007).

Electron. Lett. (1)

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).

IEEE J. Quantum Electron. (1)

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output Power,” IEEE J. Quantum Electron. 42(8), 838–847 (2006).

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U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor Saturable Absorber Mirrors (SESAM’s) for Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).

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S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photonics Technol. Lett. 12(9), 1135–1137 (2000).

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A. Rahimi-Iman, “Recent advances in VECSELs,” J. Opt. 18(9), 093003 (2016).

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B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4(7), e310 (2015).

Opt. Express (7)

F. Zhang, B. Heinen, M. Wichmann, C. Möller, B. Kunert, A. Rahimi-Iman, W. Stolz, and M. Koch, “A 23-watt single-frequency vertical-external-cavity surface-emitting laser,” Opt. Express 22(11), 12817–12822 (2014).
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J. Chilla, Q.-Z. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent Advances in Optically Pumped Semiconductor Lasers,” Proc. SPIE 6451, 645109 (2007).

Y. Bai, J. Wisdom, J. Charles, P. Hyland, C. Scholz, Z. Xu, Y. Lin, E. Weiss, J. Chilla, and A. Lepert, “Advances in optically pumped semiconductor lasers for blue emission under frequency doubling,” Proc. SPIE 9734, 97340Q (2016).

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Figures (5)

Fig. 1
Fig. 1

Pulse characterization of the pump laser. a) Optical spectrum with a peak intensity at 981.5 nm and estimated full width at half maximum of 1.9 nm. b) RF spectrum centered at 197.6 MHz at a resolution bandwidth (RBW) of 0.1 kHz. c) Autocorrelation trace (blue) and sech2 fit of the autocorrelation of the pulses (dashed red), corresponding to a pulse duration of 3.2 ps (FWHM). d) Sampling oscilloscope measurement with 1 ns and 8 ns (inset) span, confirming the single-pulse operation of the VECSEL. The weak ringing that follows the pulse signal trace is an artefact due to the electronics of the detection setup.

Fig. 2
Fig. 2

Experimental setup of the VECSEL-pumped OPO.

Fig. 3
Fig. 3

a) OPO signal output power as a function of the pump power and b) signal autocorrelation trace (blue) and sech2 fit of the autocorrelation of the pulses (dashed red), corresponding to a pulse duration of 3.2 ps (FWHM) for a cavity configuration with the 10 mm-long crystal #1, period of 28.28 µm, crystal temperature of 120°C and signal wavelength of 1413 nm.

Fig. 4
Fig. 4

Characterization of signal and idler wavelengths with crystal #1 for the four different poling periods 27.91 µm (light blue), 28.28 µm (dark blue), 28.67 µm (violet), 29.08 µm (green). a) Signal and idler optical spectrum normalized (left axis) and the output power for a pump power of 450 mW (red triangles, right axis). b) Measured (filled dots) and computed (empty dots) signal and idler wavelengths as functions of the crystal temperature and the theoretical expected values (solid lines).

Fig. 5
Fig. 5

Characterization of operation with crystal #2. Signal optical spectra normalized (left axis) and output power for a pump power of 450 mW (red triangles, right axis).

Tables (1)

Tables Icon

Table 1 Crystals parameters