Abstract

We investigate the fine structure of the optical spectrum of a broad-area laser diode with approximately 30-MHz resolution using spatially-resolved self-heterodyning technique. We show that this method is capable of measuring the relative powers and spacings of the individual lateral modes.

© 2014 Optical Society of America

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  1. H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
    [Crossref]
  2. D. F. Welch, “A brief history of high-power semiconductor lasers,” J. Sel. Top. Quantum Electron. 6(6), 1470–1477 (2000).
    [Crossref]
  3. L. F. Lester, V. Kovanis, E. P. O’Reilly, and Y. Tohmori, “Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1468–1469 (2011).
    [Crossref]
  4. H. Wenzel, “Basic aspects of high-power semiconductor laser simulation,” J. Sel. Top. Quantum Electron. 19(5), 1502913 (2013).
    [Crossref]
  5. M. Achtenhagen, A. A. Hardy, and C. S. Harder, “Coherent kinks in high-power ridge waveguide laser diodes,” J. Lightwave Technol. 24(5), 2225–2232 (2006).
    [Crossref]
  6. L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
    [Crossref]
  7. J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser & Photon. Rev. 5(3), 422–441 (2011).
    [Crossref]
  8. N. Stelmakh and M. Flowers, “Measurement of spatial modes of broad-area diode lasers with 1-GHz resolution grating spectrometer,” IEEE Photon. Technol. Lett. 18(15), 1618–1620 (2006).
    [Crossref]
  9. H. Partanen, J. Tervo, and J. Turunen, “Spatial coherence of broad-area laser diodes,” Appl. Opt. 52(14), 3221–3228 (2013).
    [Crossref] [PubMed]
  10. L. Büttner and J. Czarske, “Investigation of the influence of spatial coherence of a broad-area laser diode on the interference fringe system of a Mach-Zehnder interferometer for highly spatially resolved velocity measurements,” Appl. Opt. 44(9), 1582–1590 (2005).
    [Crossref] [PubMed]
  11. N. Stelmakh and M. Vasilyev, “Spatially resolved spectroscopy of lateral modes of broad-area laser diodes by self-heterodyning,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (CD) (Optical Society of America, 2008), May 2008, San Jose, CA, paper CMN6.
  12. N. Stelmakh, “Harnessing multimode broad-area laser-diode emission into a single-lobe diffraction-limited spot,” IEEE Photon. Technol. Lett. 19(18), 1392–1394 (2007).
    [Crossref]
  13. N. Stelmakh and M. Vasilyev, “Mode harnessing for laser diodes,” Opt. and Photon. News 21(4), 20–25 (2010).
    [Crossref]
  14. N. Stelmakh, M. Vasilyev, F. Toor, and C. Gmachl, “Degenerate and nondegenerate lateral-mode patterns in quantum cascade lasers,” Appl. Phys. Lett. 94(1), 013501 (2009).
    [Crossref]
  15. J. K. Butler and H. Kressel, Semiconductor Lasers and Heterojunction LEDs (Academic Press, 1977), Ch. 6 and Ch. 7.

2013 (2)

H. Wenzel, “Basic aspects of high-power semiconductor laser simulation,” J. Sel. Top. Quantum Electron. 19(5), 1502913 (2013).
[Crossref]

H. Partanen, J. Tervo, and J. Turunen, “Spatial coherence of broad-area laser diodes,” Appl. Opt. 52(14), 3221–3228 (2013).
[Crossref] [PubMed]

2011 (2)

L. F. Lester, V. Kovanis, E. P. O’Reilly, and Y. Tohmori, “Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1468–1469 (2011).
[Crossref]

J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser & Photon. Rev. 5(3), 422–441 (2011).
[Crossref]

2010 (2)

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

N. Stelmakh and M. Vasilyev, “Mode harnessing for laser diodes,” Opt. and Photon. News 21(4), 20–25 (2010).
[Crossref]

2009 (1)

N. Stelmakh, M. Vasilyev, F. Toor, and C. Gmachl, “Degenerate and nondegenerate lateral-mode patterns in quantum cascade lasers,” Appl. Phys. Lett. 94(1), 013501 (2009).
[Crossref]

2007 (1)

N. Stelmakh, “Harnessing multimode broad-area laser-diode emission into a single-lobe diffraction-limited spot,” IEEE Photon. Technol. Lett. 19(18), 1392–1394 (2007).
[Crossref]

2006 (2)

N. Stelmakh and M. Flowers, “Measurement of spatial modes of broad-area diode lasers with 1-GHz resolution grating spectrometer,” IEEE Photon. Technol. Lett. 18(15), 1618–1620 (2006).
[Crossref]

M. Achtenhagen, A. A. Hardy, and C. S. Harder, “Coherent kinks in high-power ridge waveguide laser diodes,” J. Lightwave Technol. 24(5), 2225–2232 (2006).
[Crossref]

2005 (1)

2000 (2)

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

D. F. Welch, “A brief history of high-power semiconductor lasers,” J. Sel. Top. Quantum Electron. 6(6), 1470–1477 (2000).
[Crossref]

Achtenhagen, M.

Bai, C.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Bao, L.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Büttner, L.

Czarske, J.

DeVito, M.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Dong, W.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Elsaesser, T.

J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser & Photon. Rev. 5(3), 422–441 (2011).
[Crossref]

Flowers, M.

N. Stelmakh and M. Flowers, “Measurement of spatial modes of broad-area diode lasers with 1-GHz resolution grating spectrometer,” IEEE Photon. Technol. Lett. 18(15), 1618–1620 (2006).
[Crossref]

Gmachl, C.

N. Stelmakh, M. Vasilyev, F. Toor, and C. Gmachl, “Degenerate and nondegenerate lateral-mode patterns in quantum cascade lasers,” Appl. Phys. Lett. 94(1), 013501 (2009).
[Crossref]

Grimshaw, M.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Harder, C. S.

Hardy, A. A.

He, X.

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

Hempel, M.

J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser & Photon. Rev. 5(3), 422–441 (2011).
[Crossref]

Kanskar, M.

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

Kovanis, V.

L. F. Lester, V. Kovanis, E. P. O’Reilly, and Y. Tohmori, “Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1468–1469 (2011).
[Crossref]

Leisher, P.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Lester, L. F.

L. F. Lester, V. Kovanis, E. P. O’Reilly, and Y. Tohmori, “Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1468–1469 (2011).
[Crossref]

Li, D.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Martinsen, R.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Mott, J.

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

O’Reilly, E. P.

L. F. Lester, V. Kovanis, E. P. O’Reilly, and Y. Tohmori, “Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1468–1469 (2011).
[Crossref]

Ovtchinnikov, A.

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

Partanen, H.

Patterson, S.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Price, K.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Stelmakh, N.

N. Stelmakh and M. Vasilyev, “Mode harnessing for laser diodes,” Opt. and Photon. News 21(4), 20–25 (2010).
[Crossref]

N. Stelmakh, M. Vasilyev, F. Toor, and C. Gmachl, “Degenerate and nondegenerate lateral-mode patterns in quantum cascade lasers,” Appl. Phys. Lett. 94(1), 013501 (2009).
[Crossref]

N. Stelmakh, “Harnessing multimode broad-area laser-diode emission into a single-lobe diffraction-limited spot,” IEEE Photon. Technol. Lett. 19(18), 1392–1394 (2007).
[Crossref]

N. Stelmakh and M. Flowers, “Measurement of spatial modes of broad-area diode lasers with 1-GHz resolution grating spectrometer,” IEEE Photon. Technol. Lett. 18(15), 1618–1620 (2006).
[Crossref]

Tervo, J.

Tohmori, Y.

L. F. Lester, V. Kovanis, E. P. O’Reilly, and Y. Tohmori, “Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1468–1469 (2011).
[Crossref]

Tomm, J. W.

J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser & Photon. Rev. 5(3), 422–441 (2011).
[Crossref]

Toor, F.

N. Stelmakh, M. Vasilyev, F. Toor, and C. Gmachl, “Degenerate and nondegenerate lateral-mode patterns in quantum cascade lasers,” Appl. Phys. Lett. 94(1), 013501 (2009).
[Crossref]

Treusch, H. G.

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

Turunen, J.

Vasilyev, M.

N. Stelmakh and M. Vasilyev, “Mode harnessing for laser diodes,” Opt. and Photon. News 21(4), 20–25 (2010).
[Crossref]

N. Stelmakh, M. Vasilyev, F. Toor, and C. Gmachl, “Degenerate and nondegenerate lateral-mode patterns in quantum cascade lasers,” Appl. Phys. Lett. 94(1), 013501 (2009).
[Crossref]

Wang, J.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Welch, D. F.

D. F. Welch, “A brief history of high-power semiconductor lasers,” J. Sel. Top. Quantum Electron. 6(6), 1470–1477 (2000).
[Crossref]

Wenzel, H.

H. Wenzel, “Basic aspects of high-power semiconductor laser simulation,” J. Sel. Top. Quantum Electron. 19(5), 1502913 (2013).
[Crossref]

Wise, D.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Xu, D.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Yang, S.

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

Zhang, S.

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Ziegler, M.

J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser & Photon. Rev. 5(3), 422–441 (2011).
[Crossref]

Appl. Opt. (2)

Appl. Phys. Lett. (1)

N. Stelmakh, M. Vasilyev, F. Toor, and C. Gmachl, “Degenerate and nondegenerate lateral-mode patterns in quantum cascade lasers,” Appl. Phys. Lett. 94(1), 013501 (2009).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

H. G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, “High-brightness semiconductor laser sources for materials processing: Stacking, beam shaping, and bars,” IEEE J. Sel. Top. Quantum Electron. 6(4), 601–614 (2000).
[Crossref]

L. F. Lester, V. Kovanis, E. P. O’Reilly, and Y. Tohmori, “Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1468–1469 (2011).
[Crossref]

IEEE Photon. Technol. Lett. (2)

N. Stelmakh and M. Flowers, “Measurement of spatial modes of broad-area diode lasers with 1-GHz resolution grating spectrometer,” IEEE Photon. Technol. Lett. 18(15), 1618–1620 (2006).
[Crossref]

N. Stelmakh, “Harnessing multimode broad-area laser-diode emission into a single-lobe diffraction-limited spot,” IEEE Photon. Technol. Lett. 19(18), 1392–1394 (2007).
[Crossref]

J. Lightwave Technol. (1)

J. Sel. Top. Quantum Electron. (2)

H. Wenzel, “Basic aspects of high-power semiconductor laser simulation,” J. Sel. Top. Quantum Electron. 19(5), 1502913 (2013).
[Crossref]

D. F. Welch, “A brief history of high-power semiconductor lasers,” J. Sel. Top. Quantum Electron. 6(6), 1470–1477 (2000).
[Crossref]

Laser & Photon. Rev. (1)

J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser & Photon. Rev. 5(3), 422–441 (2011).
[Crossref]

Opt. and Photon. News (1)

N. Stelmakh and M. Vasilyev, “Mode harnessing for laser diodes,” Opt. and Photon. News 21(4), 20–25 (2010).
[Crossref]

Proc. SPIE (1)

L. Bao, J. Wang, M. DeVito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, “Reliability of high performance 9xx-nm single emitter diode lasers,” Proc. SPIE 7583, 758302 (2010).
[Crossref]

Other (2)

N. Stelmakh and M. Vasilyev, “Spatially resolved spectroscopy of lateral modes of broad-area laser diodes by self-heterodyning,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (CD) (Optical Society of America, 2008), May 2008, San Jose, CA, paper CMN6.

J. K. Butler and H. Kressel, Semiconductor Lasers and Heterojunction LEDs (Academic Press, 1977), Ch. 6 and Ch. 7.

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