Abstract

A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

© 2014 Optical Society of America

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  1. N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
    [CrossRef]
  2. V. Ryzhii, M. Ryzhii, V. Mitin, T. Otsuji, “Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures,” J. Appl. Phys. 107, 054512 (2010).
  3. B. Kaestner, D. A. Williams, D. G. Hasko, “Nanoscale lateral light emitting p-n junctions in AlGaAs/GaAs,” Microelectron. Eng. 67–68, 797–802 (2003).
    [CrossRef]
  4. B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth, “Co-planar spin-polarized light-emitting diodes,” Appl. Phys. Lett. 88(9), 091106 (2006).
    [CrossRef]
  5. M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
    [CrossRef]
  6. G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
    [CrossRef]
  7. J. Wunderlich, B. Kaestner, J. Sinova, T. Jungwirth, “Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System,” Phys. Rev. Lett. 94(4), 047204 (2005).
    [CrossRef] [PubMed]
  8. C. L. Foden, V. I. Talyanskii, G. J. Milburn, M. L. Leadbeater, M. Pepper, “High-frequency acousto-electric single-photon source,” Phys. Rev. A 62(1), 011803 (2000).
    [CrossRef]
  9. J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
    [CrossRef]
  10. G. De Simoni, V. Piazza, L. Sorba, G. Biasiol, F. Beltram, “Acoustoelectric luminescence from a field-effect n-i-p lateral junction,” Appl. Phys. Lett. 94(12), 121103 (2009).
    [CrossRef]
  11. J. M. Z. Ocampo, P. O. Vaccaro, S. Saravanan, K. Kubota, T. Aida, “Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate,” Appl. Phys. Lett. 82(18), 2951–2953 (2003).
    [CrossRef]
  12. A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
    [CrossRef]
  13. P. O. Vaccaro, H. Ohnishi, K. Fujita, “A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates,” Appl. Phys. Lett. 72(7), 818–820 (1998).
    [CrossRef]
  14. T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
    [CrossRef]
  15. B. Kaestner, D. G. Hasko, D. A. Williams, “Lateral p-n Junction in Modulation Doped AlGaAs/GaAs,” Jpn. J. Appl. Phys. 41(Part 1, No. 4B), 2513–2515 (2002).
    [CrossRef]
  16. B. Kaestner, J. Wunderlich, T. J. B. M. Janssen, “Low-dimensional light-emitting transistor with tunable recombination zone,” J. Mod. Opt. 54(2-3), 431–439 (2007).
    [CrossRef]
  17. V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
    [CrossRef]
  18. R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
    [CrossRef]
  19. M. A. Herman, D. Bimberg, J. Christen, “Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques,” J. Appl. Phys. 70(2), R1–R52 (1991).
    [CrossRef]
  20. J. Kim, O. Benson, H. Kan, Y. Yamamoto, “A single-photon turnstile device,” Nature 397(6719), 500–503 (1999).
    [CrossRef]
  21. B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
    [CrossRef]
  22. J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
    [CrossRef]

2013 (1)

V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
[CrossRef]

2012 (1)

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

2011 (1)

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

2010 (1)

V. Ryzhii, M. Ryzhii, V. Mitin, T. Otsuji, “Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures,” J. Appl. Phys. 107, 054512 (2010).

2009 (1)

G. De Simoni, V. Piazza, L. Sorba, G. Biasiol, F. Beltram, “Acoustoelectric luminescence from a field-effect n-i-p lateral junction,” Appl. Phys. Lett. 94(12), 121103 (2009).
[CrossRef]

2008 (1)

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

2007 (1)

B. Kaestner, J. Wunderlich, T. J. B. M. Janssen, “Low-dimensional light-emitting transistor with tunable recombination zone,” J. Mod. Opt. 54(2-3), 431–439 (2007).
[CrossRef]

2006 (2)

B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth, “Co-planar spin-polarized light-emitting diodes,” Appl. Phys. Lett. 88(9), 091106 (2006).
[CrossRef]

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

2005 (1)

J. Wunderlich, B. Kaestner, J. Sinova, T. Jungwirth, “Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System,” Phys. Rev. Lett. 94(4), 047204 (2005).
[CrossRef] [PubMed]

2004 (1)

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

2003 (3)

J. M. Z. Ocampo, P. O. Vaccaro, S. Saravanan, K. Kubota, T. Aida, “Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate,” Appl. Phys. Lett. 82(18), 2951–2953 (2003).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

B. Kaestner, D. A. Williams, D. G. Hasko, “Nanoscale lateral light emitting p-n junctions in AlGaAs/GaAs,” Microelectron. Eng. 67–68, 797–802 (2003).
[CrossRef]

2002 (1)

B. Kaestner, D. G. Hasko, D. A. Williams, “Lateral p-n Junction in Modulation Doped AlGaAs/GaAs,” Jpn. J. Appl. Phys. 41(Part 1, No. 4B), 2513–2515 (2002).
[CrossRef]

2001 (1)

N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
[CrossRef]

2000 (1)

C. L. Foden, V. I. Talyanskii, G. J. Milburn, M. L. Leadbeater, M. Pepper, “High-frequency acousto-electric single-photon source,” Phys. Rev. A 62(1), 011803 (2000).
[CrossRef]

1999 (3)

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
[CrossRef]

J. Kim, O. Benson, H. Kan, Y. Yamamoto, “A single-photon turnstile device,” Nature 397(6719), 500–503 (1999).
[CrossRef]

1998 (1)

P. O. Vaccaro, H. Ohnishi, K. Fujita, “A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates,” Appl. Phys. Lett. 72(7), 818–820 (1998).
[CrossRef]

1991 (1)

M. A. Herman, D. Bimberg, J. Christen, “Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques,” J. Appl. Phys. 70(2), R1–R52 (1991).
[CrossRef]

Aida, T.

J. M. Z. Ocampo, P. O. Vaccaro, S. Saravanan, K. Kubota, T. Aida, “Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate,” Appl. Phys. Lett. 82(18), 2951–2953 (2003).
[CrossRef]

N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
[CrossRef]

Amakawa, S.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Anderson, D.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

Atkinson, P.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

Barnes, C. H. W.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

Beere, H. E.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

Beltram, F.

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

G. De Simoni, V. Piazza, L. Sorba, G. Biasiol, F. Beltram, “Acoustoelectric luminescence from a field-effect n-i-p lateral junction,” Appl. Phys. Lett. 94(12), 121103 (2009).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

Benson, O.

J. Kim, O. Benson, H. Kan, Y. Yamamoto, “A single-photon turnstile device,” Nature 397(6719), 500–503 (1999).
[CrossRef]

Biasiol, G.

G. De Simoni, V. Piazza, L. Sorba, G. Biasiol, F. Beltram, “Acoustoelectric luminescence from a field-effect n-i-p lateral junction,” Appl. Phys. Lett. 94(12), 121103 (2009).
[CrossRef]

Bimberg, D.

M. A. Herman, D. Bimberg, J. Christen, “Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques,” J. Appl. Phys. 70(2), R1–R52 (1991).
[CrossRef]

Blumenthal, M. D.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Bremner, S. P.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

Burke, T.

A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
[CrossRef]

Burroughes, J.

A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
[CrossRef]

Cecchini, M.

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

Christen, J.

M. A. Herman, D. Bimberg, J. Christen, “Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques,” J. Appl. Phys. 70(2), R1–R52 (1991).
[CrossRef]

Dai, V. T.

V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
[CrossRef]

De Simoni, G.

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

G. De Simoni, V. Piazza, L. Sorba, G. Biasiol, F. Beltram, “Acoustoelectric luminescence from a field-effect n-i-p lateral junction,” Appl. Phys. Lett. 94(12), 121103 (2009).
[CrossRef]

Fletcher, J. D.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

Foden, C. L.

C. L. Foden, V. I. Talyanskii, G. J. Milburn, M. L. Leadbeater, M. Pepper, “High-frequency acousto-electric single-photon source,” Phys. Rev. A 62(1), 011803 (2000).
[CrossRef]

Ford, C. J. B.

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

Fujita, K.

P. O. Vaccaro, H. Ohnishi, K. Fujita, “A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates,” Appl. Phys. Lett. 72(7), 818–820 (1998).
[CrossRef]

Gell, J. R.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

Giblin, S. P.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

Griffiths, J. P.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

Harrell, R. H.

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

Hasko, D. G.

B. Kaestner, D. A. Williams, D. G. Hasko, “Nanoscale lateral light emitting p-n junctions in AlGaAs/GaAs,” Microelectron. Eng. 67–68, 797–802 (2003).
[CrossRef]

B. Kaestner, D. G. Hasko, D. A. Williams, “Lateral p-n Junction in Modulation Doped AlGaAs/GaAs,” Jpn. J. Appl. Phys. 41(Part 1, No. 4B), 2513–2515 (2002).
[CrossRef]

Hein, G.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Herman, M. A.

M. A. Herman, D. Bimberg, J. Christen, “Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques,” J. Appl. Phys. 70(2), R1–R52 (1991).
[CrossRef]

Hosey, T.

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

Janssen, T. J. B. M.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

B. Kaestner, J. Wunderlich, T. J. B. M. Janssen, “Low-dimensional light-emitting transistor with tunable recombination zone,” J. Mod. Opt. 54(2-3), 431–439 (2007).
[CrossRef]

Jones, G. A. C.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

Jungwirth, T.

B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth, “Co-planar spin-polarized light-emitting diodes,” Appl. Phys. Lett. 88(9), 091106 (2006).
[CrossRef]

J. Wunderlich, B. Kaestner, J. Sinova, T. Jungwirth, “Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System,” Phys. Rev. Lett. 94(4), 047204 (2005).
[CrossRef] [PubMed]

Kaestner, B.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

B. Kaestner, J. Wunderlich, T. J. B. M. Janssen, “Low-dimensional light-emitting transistor with tunable recombination zone,” J. Mod. Opt. 54(2-3), 431–439 (2007).
[CrossRef]

B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth, “Co-planar spin-polarized light-emitting diodes,” Appl. Phys. Lett. 88(9), 091106 (2006).
[CrossRef]

J. Wunderlich, B. Kaestner, J. Sinova, T. Jungwirth, “Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System,” Phys. Rev. Lett. 94(4), 047204 (2005).
[CrossRef] [PubMed]

B. Kaestner, D. A. Williams, D. G. Hasko, “Nanoscale lateral light emitting p-n junctions in AlGaAs/GaAs,” Microelectron. Eng. 67–68, 797–802 (2003).
[CrossRef]

B. Kaestner, D. G. Hasko, D. A. Williams, “Lateral p-n Junction in Modulation Doped AlGaAs/GaAs,” Jpn. J. Appl. Phys. 41(Part 1, No. 4B), 2513–2515 (2002).
[CrossRef]

Kan, H.

J. Kim, O. Benson, H. Kan, Y. Yamamoto, “A single-photon turnstile device,” Nature 397(6719), 500–503 (1999).
[CrossRef]

Kashcheyevs, V.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Kataoka, M.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

Khmyrova, I.

N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
[CrossRef]

Kim, J.

J. Kim, O. Benson, H. Kan, Y. Yamamoto, “A single-photon turnstile device,” Nature 397(6719), 500–503 (1999).
[CrossRef]

Kubota, K.

J. M. Z. Ocampo, P. O. Vaccaro, S. Saravanan, K. Kubota, T. Aida, “Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate,” Appl. Phys. Lett. 82(18), 2951–2953 (2003).
[CrossRef]

Lazzarino, M.

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

Leadbeater, M. L.

C. L. Foden, V. I. Talyanskii, G. J. Milburn, M. L. Leadbeater, M. Pepper, “High-frequency acousto-electric single-photon source,” Phys. Rev. A 62(1), 011803 (2000).
[CrossRef]

Lee, C. P.

V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
[CrossRef]

Li, L.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Li, L. C.

V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
[CrossRef]

Lin, S. D.

V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
[CrossRef]

Lin, S. W.

V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
[CrossRef]

Mahler, L.

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

Milburn, G. J.

C. L. Foden, V. I. Talyanskii, G. J. Milburn, M. L. Leadbeater, M. Pepper, “High-frequency acousto-electric single-photon source,” Phys. Rev. A 62(1), 011803 (2000).
[CrossRef]

Mitin, V.

V. Ryzhii, M. Ryzhii, V. Mitin, T. Otsuji, “Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures,” J. Appl. Phys. 107, 054512 (2010).

Nicoll, C. A.

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

Norman, C. E.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
[CrossRef]

North, A.

A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
[CrossRef]

Ocampo, J. M. Z.

J. M. Z. Ocampo, P. O. Vaccaro, S. Saravanan, K. Kubota, T. Aida, “Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate,” Appl. Phys. Lett. 82(18), 2951–2953 (2003).
[CrossRef]

Ohnishi, H.

P. O. Vaccaro, H. Ohnishi, K. Fujita, “A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates,” Appl. Phys. Lett. 72(7), 818–820 (1998).
[CrossRef]

Otsuji, T.

V. Ryzhii, M. Ryzhii, V. Mitin, T. Otsuji, “Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures,” J. Appl. Phys. 107, 054512 (2010).

Park, S.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

Pepper, M.

C. L. Foden, V. I. Talyanskii, G. J. Milburn, M. L. Leadbeater, M. Pepper, “High-frequency acousto-electric single-photon source,” Phys. Rev. A 62(1), 011803 (2000).
[CrossRef]

A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
[CrossRef]

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

Piazza, V.

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

G. De Simoni, V. Piazza, L. Sorba, G. Biasiol, F. Beltram, “Acoustoelectric luminescence from a field-effect n-i-p lateral junction,” Appl. Phys. Lett. 94(12), 121103 (2009).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

Pierz, K.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Pyshkin, K. S.

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

Ritchie, D. A.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

Ryzhii, M.

V. Ryzhii, M. Ryzhii, V. Mitin, T. Otsuji, “Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures,” J. Appl. Phys. 107, 054512 (2010).

Ryzhii, V.

V. Ryzhii, M. Ryzhii, V. Mitin, T. Otsuji, “Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures,” J. Appl. Phys. 107, 054512 (2010).

N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
[CrossRef]

Saravanan, S.

J. M. Z. Ocampo, P. O. Vaccaro, S. Saravanan, K. Kubota, T. Aida, “Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate,” Appl. Phys. Lett. 82(18), 2951–2953 (2003).
[CrossRef]

Schumacher, H. W.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

See, P.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

Sfigakis, F.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

Shields, A.

A. North, J. Burroughes, T. Burke, A. Shields, C. E. Norman, M. Pepper, “The two-dimensional lateral injection in-plane laser,” IEEE J. Quantum Electron. 35(3), 352–357 (1999).
[CrossRef]

Shields, A. J.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

Siegner, U.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Sim, H. S.

J. D. Fletcher, M. Kataoka, S. P. Giblin, S. Park, H. S. Sim, P. See, D. A. Ritchie, J. P. Griffiths, G. A. C. Jones, H. E. Beere, T. J. B. M. Janssen, “Stabilization of single-electron pumps by high magnetic fields,” Phys. Rev. B 86(15), 155311 (2012).
[CrossRef]

Simmons, M. Y.

R. H. Harrell, K. S. Pyshkin, M. Y. Simmons, D. A. Ritchie, C. J. B. Ford, G. A. C. Jones, M. Pepper, “Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures,” Appl. Phys. Lett. 74(16), 2328–2330 (1999).
[CrossRef]

Sinova, J.

B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth, “Co-planar spin-polarized light-emitting diodes,” Appl. Phys. Lett. 88(9), 091106 (2006).
[CrossRef]

J. Wunderlich, B. Kaestner, J. Sinova, T. Jungwirth, “Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System,” Phys. Rev. Lett. 94(4), 047204 (2005).
[CrossRef] [PubMed]

Sorba, L.

G. De Simoni, V. Piazza, L. Sorba, G. Biasiol, F. Beltram, “Acoustoelectric luminescence from a field-effect n-i-p lateral junction,” Appl. Phys. Lett. 94(12), 121103 (2009).
[CrossRef]

Talyanskii, V.

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

Talyanskii, V. I.

C. L. Foden, V. I. Talyanskii, G. J. Milburn, M. L. Leadbeater, M. Pepper, “High-frequency acousto-electric single-photon source,” Phys. Rev. A 62(1), 011803 (2000).
[CrossRef]

Taniyama, H.

N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
[CrossRef]

Tredicucci, A.

G. De Simoni, L. Mahler, V. Piazza, A. Tredicucci, C. A. Nicoll, H. E. Beere, D. A. Ritchie, F. Beltram, “Lasing in planar semiconductor diodes,” Appl. Phys. Lett. 99(26), 261110 (2011).
[CrossRef]

Tsutsui, N.

N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
[CrossRef]

Unitt, D. C.

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

Vaccaro, P. O.

J. M. Z. Ocampo, P. O. Vaccaro, S. Saravanan, K. Kubota, T. Aida, “Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate,” Appl. Phys. Lett. 82(18), 2951–2953 (2003).
[CrossRef]

N. Tsutsui, V. Ryzhii, I. Khmyrova, P. O. Vaccaro, H. Taniyama, T. Aida, “High-frequency performance of lateral p-n junction photodiodes,” IEEE J. Quantum Electron. 37(6), 830–836 (2001).
[CrossRef]

P. O. Vaccaro, H. Ohnishi, K. Fujita, “A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates,” Appl. Phys. Lett. 72(7), 818–820 (1998).
[CrossRef]

Vijendran, S.

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

Ward, M. B.

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, A. J. Shields, “Surface-acoustic-wave-driven luminescence from a lateral p-n junction,” Appl. Phys. Lett. 89(24), 243505 (2006).
[CrossRef]

T. Hosey, V. Talyanskii, S. Vijendran, G. A. C. Jones, M. B. Ward, D. C. Unitt, C. E. Norman, A. J. Shields, “Lateral n-p junction for acoustoelectric nanocircuits,” Appl. Phys. Lett. 85(3), 491–493 (2004).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

Weimann, T.

B. Kaestner, V. Kashcheyevs, S. Amakawa, M. D. Blumenthal, L. Li, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher, “Single-parameter nonadiabatic quantized charge pumping,” Phys. Rev. B 77(15), 153301 (2008).
[CrossRef]

Williams, D. A.

B. Kaestner, D. A. Williams, D. G. Hasko, “Nanoscale lateral light emitting p-n junctions in AlGaAs/GaAs,” Microelectron. Eng. 67–68, 797–802 (2003).
[CrossRef]

B. Kaestner, D. G. Hasko, D. A. Williams, “Lateral p-n Junction in Modulation Doped AlGaAs/GaAs,” Jpn. J. Appl. Phys. 41(Part 1, No. 4B), 2513–2515 (2002).
[CrossRef]

Wu, J. Y.

V. T. Dai, S. D. Lin, S. W. Lin, J. Y. Wu, L. C. Li, C. P. Lee, “Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well,” Jpn. J. Appl. Phys. 52(1R), 014001 (2013).
[CrossRef]

Wunderlich, J.

B. Kaestner, J. Wunderlich, T. J. B. M. Janssen, “Low-dimensional light-emitting transistor with tunable recombination zone,” J. Mod. Opt. 54(2-3), 431–439 (2007).
[CrossRef]

B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth, “Co-planar spin-polarized light-emitting diodes,” Appl. Phys. Lett. 88(9), 091106 (2006).
[CrossRef]

J. Wunderlich, B. Kaestner, J. Sinova, T. Jungwirth, “Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System,” Phys. Rev. Lett. 94(4), 047204 (2005).
[CrossRef] [PubMed]

Yamamoto, Y.

J. Kim, O. Benson, H. Kan, Y. Yamamoto, “A single-photon turnstile device,” Nature 397(6719), 500–503 (1999).
[CrossRef]

Appl. Phys. Lett. (9)

B. Kaestner, J. Wunderlich, J. Sinova, T. Jungwirth, “Co-planar spin-polarized light-emitting diodes,” Appl. Phys. Lett. 88(9), 091106 (2006).
[CrossRef]

M. Cecchini, V. Piazza, F. Beltram, M. Lazzarino, M. B. Ward, A. J. Shields, H. E. Beere, D. A. Ritchie, “High-performance planar light-emitting diodes,” Appl. Phys. Lett. 82(4), 636–638 (2003).
[CrossRef]

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