Abstract

GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Si-implanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantation-free regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

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    [CrossRef]
  2. S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
    [CrossRef]
  3. I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, M. Krames, “A dual-wavelength indium gallium nitride quantum well light-emitting diode,” Appl. Phys. Lett. 79(16), 2532–2534 (2001).
    [CrossRef]
  4. M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
    [CrossRef]
  5. H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
    [CrossRef]
  6. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
    [CrossRef]
  7. J. Park, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333–335 (1998).
    [CrossRef]
  8. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201–1203 (2002).
    [CrossRef]
  9. J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
    [CrossRef]
  10. Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  13. T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
    [CrossRef]
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    [CrossRef]
  15. C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
    [CrossRef]
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    [CrossRef]
  17. J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
    [CrossRef]
  18. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
    [CrossRef]
  19. J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
    [CrossRef]
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    [CrossRef]
  21. N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
    [CrossRef]
  22. A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
    [CrossRef]
  23. Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
    [CrossRef]
  24. T. Detchprohm, K. Hiramatsu, N. Sawaki, I. Akasaki, “The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates,” J. Cryst. Growth 137(1-2), 170–174 (1994).
    [CrossRef]
  25. M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
    [CrossRef]

2011

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

2010

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

2009

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[CrossRef]

2008

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[CrossRef]

2007

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

2006

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[CrossRef]

M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
[CrossRef]

2004

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

2003

Y. L. Li, T. Gessmann, E. F. Schubert, J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167–2172 (2003).
[CrossRef]

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[CrossRef]

2002

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201–1203 (2002).
[CrossRef]

2001

I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, M. Krames, “A dual-wavelength indium gallium nitride quantum well light-emitting diode,” Appl. Phys. Lett. 79(16), 2532–2534 (2001).
[CrossRef]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

2000

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

1999

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

1998

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

J. Park, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333–335 (1998).
[CrossRef]

1997

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
[CrossRef]

1994

T. Detchprohm, K. Hiramatsu, N. Sawaki, I. Akasaki, “The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates,” J. Cryst. Growth 137(1-2), 170–174 (1994).
[CrossRef]

Abid, M.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Akasaki, I.

T. Detchprohm, K. Hiramatsu, N. Sawaki, I. Akasaki, “The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates,” J. Cryst. Growth 137(1-2), 170–174 (1994).
[CrossRef]

Allsopp, D.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Bertram, F.

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Blaauw, C.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[CrossRef]

Bonanno, P. L.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Cai, Z. H.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Chang, S. J.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Chen, C. W.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

Chi, G. C.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Cho, C. Y.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

Cho, Y.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

Christen, J.

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Chung, U. I.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

Cockayne, D. J. H.

J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
[CrossRef]

Craven, M. D.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201–1203 (2002).
[CrossRef]

Crawford, M. H.

J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
[CrossRef]

Dai, T.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[CrossRef]

DenBaars, S. P.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201–1203 (2002).
[CrossRef]

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

Detchprohm, T.

T. Detchprohm, K. Hiramatsu, N. Sawaki, I. Akasaki, “The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates,” J. Cryst. Growth 137(1-2), 170–174 (1994).
[CrossRef]

Dupuis, R. D.

J. Park, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333–335 (1998).
[CrossRef]

Eckey, L.

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Edwards, P. R.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Eiting, C. J.

J. Park, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333–335 (1998).
[CrossRef]

Emmerstorfer, B.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[CrossRef]

Engl, K.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Fang, H.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[CrossRef]

Funato, M.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
[CrossRef]

Gautier, S.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Gessmann, T.

Y. L. Li, T. Gessmann, E. F. Schubert, J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167–2172 (2003).
[CrossRef]

Glew, R. W.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[CrossRef]

Gmeinwieser, N.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Goh, W. H.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Gottfriedsen, P.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Greenspan, J. E.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[CrossRef]

Grudowski, P. A.

J. Park, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333–335 (1998).
[CrossRef]

Härle, V.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Hayashi, K.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

Hiramatsu, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

T. Detchprohm, K. Hiramatsu, N. Sawaki, I. Akasaki, “The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates,” J. Cryst. Growth 137(1-2), 170–174 (1994).
[CrossRef]

Hoffmann, A.

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Huang, F. W.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

Iyechika, Y.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Jagadamma, L. K.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Jung, D. R.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

Kao, C. J.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

Kapolnek, D.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

Karlicek, R. F.

J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
[CrossRef]

Kaschner, A.

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Kawakami, Y.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
[CrossRef]

Keller, S.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

Kim, J.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

Kim, J. Y.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

Kim, T.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

Kitamura, S.

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Kondou, T.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
[CrossRef]

Kotani, T.

M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
[CrossRef]

Kou, C. H.

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Kovac, J.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Kozodoy, P.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

Krames, M.

I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, M. Krames, “A dual-wavelength indium gallium nitride quantum well light-emitting diode,” Appl. Phys. Lett. 79(16), 2532–2534 (2001).
[CrossRef]

Kuo, C. H.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[CrossRef]

Kwon, K. W.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

Kwon, M. K.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

Lai, W. C.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[CrossRef]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Le Gratiet, L.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Leber, A.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Lee, C. C.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

Lee, M. L.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[CrossRef]

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

Lee, S.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

Lell, A.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Li, Y. L.

Y. L. Li, T. Gessmann, E. F. Schubert, J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167–2172 (2003).
[CrossRef]

Lim, S. H.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201–1203 (2002).
[CrossRef]

Liu, C.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Liu, Q. K. K.

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

Lugauer, H.-J.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Maeda, T.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Makarona, E.

I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, M. Krames, “A dual-wavelength indium gallium nitride quantum well light-emitting diode,” Appl. Phys. Lett. 79(16), 2532–2534 (2001).
[CrossRef]

Martin, R. W.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Martinez, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Miller, S.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Mishra, U. K.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

Miyake, H.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Mizutani, H.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Motogaito, A.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Moudakir, T.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Mukai, T.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
[CrossRef]

Nakano, Y.

Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[CrossRef]

Narukawa, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Narukawa, Y.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, T. Mukai, “Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors,” Appl. Phys. Lett. 88(26), 261920 (2006).
[CrossRef]

Nishiura, S.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

Nishiyama, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Nurmikko, A. V.

I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, M. Krames, “A dual-wavelength indium gallium nitride quantum well light-emitting diode,” Appl. Phys. Lett. 79(16), 2532–2534 (2001).
[CrossRef]

Onishi, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[CrossRef]

Orsal, G.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Ougazzaden, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Ozden, I.

I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, M. Krames, “A dual-wavelength indium gallium nitride quantum well light-emitting diode,” Appl. Phys. Lett. 79(16), 2532–2534 (2001).
[CrossRef]

Park, I. K.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

Park, J.

J. Park, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333–335 (1998).
[CrossRef]

Park, S. J.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[CrossRef]

Park, Y.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

Patriarche, G.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Pearton, S. J.

J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
[CrossRef]

Ramdane, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Sang, L. W.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[CrossRef]

Satka, A.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Sawaki, N.

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

T. Detchprohm, K. Hiramatsu, N. Sawaki, I. Akasaki, “The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates,” J. Cryst. Growth 137(1-2), 170–174 (1994).
[CrossRef]

Schmidt, M.

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Schubert, E. F.

Y. L. Li, T. Gessmann, E. F. Schubert, J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167–2172 (2003).
[CrossRef]

Schwarz, U. T.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Shei, S. C.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[CrossRef]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Sheu, J. K.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[CrossRef]

Y. L. Li, T. Gessmann, E. F. Schubert, J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167–2172 (2003).
[CrossRef]

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Shields, P.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Shih, I.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[CrossRef]

Shimogaki, Y.

Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[CrossRef]

Shioda, T.

Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[CrossRef]

Siegle, H.

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Sirenko, A. A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Soltani, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Speck, J. S.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201–1203 (2002).
[CrossRef]

Su, Y. K.

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Sugiyama, M.

Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[CrossRef]

Takeuchi, T.

I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, M. Krames, “A dual-wavelength indium gallium nitride quantum well light-emitting diode,” Appl. Phys. Lett. 79(16), 2532–2534 (2001).
[CrossRef]

Tan, H. H.

J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
[CrossRef]

Thomsen, C.

Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram, “Stress analysis of selective epitaxial growth of GaN,” Appl. Phys. Lett. 74(21), 3122–3124 (1999).
[CrossRef]

A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, M. Schmidt, K. Hiramatsu, S. Kitamura, N. Sawaki, “Local strain distribution of hexagonal GaN pyramids,” J. Cryst. Growth 189-190, 630–633 (1998).
[CrossRef]

Tomita, Y.

Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[CrossRef]

Troadec, D.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[CrossRef]

Tsai, C. M.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[CrossRef]

Tsai, J. M.

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Tu, S. J.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

Tun, C. J.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

Ueda, M.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[CrossRef]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[CrossRef]

Uherek, F.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Underwood, R. D.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

Vetury, R.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204–1206 (1997).
[CrossRef]

Wang, W.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[CrossRef]

Wang, Y.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[CrossRef]

Wegscheider, W.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Weimar, A.

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle, “Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates,” J. Appl. Phys. 96(7), 3666–3672 (2004).
[CrossRef]

Wen, T. C.

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[CrossRef]

Williams, J. S.

J. C. Zolper, H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, M. H. Crawford, R. F. Karlicek, “Electrical and structural analysis of high-dose Si implantation in GaN,” Appl. Phys. Lett. 70(20), 2729–2731 (1997).
[CrossRef]

Wu, F.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201–1203 (2002).
[CrossRef]

Yang, C. C.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10A10), 1400–1402 (2011).
[CrossRef]

Yang, M. S.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[CrossRef]

Yang, Z. J.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[CrossRef]

Yeh, L. S.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[CrossRef]

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H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
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