Abstract

We have investigated passive mode-locking of Tm,Ho:YAG lasers with GaInAs- and GaSb-based semiconductor saturable absorber mirrors (SESAMs). With a GaInAs-based SESAM, stable dual-wavelength mode-locking operation was achieved at 2091 nm and 2097 nm, generating pulses with duration of 56.9 ps and a maximum output power of 285 mW. By using the GaSb-based SESAMs, we could generate mode-locked pulses as short as 21.3 ps at 2091 nm with a maximum output power of 63 mW. We attribute the shorter pulse duration obtained with the GaSb SESAMs to the ultrafast recovery time of the absorption and higher nonlinearity compared to standard GaInAs SESAMs.

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  1. R. R. Gattass and E. Mazur, “Femtosecond laser micromachining in transparent materials,” Nat. Photonics2(4), 219–225 (2008).
    [CrossRef]
  2. K. Schepler, B. Smith, F. Heine, and G. Huber, “Passive Q-switching and mode locking of 2-μm lasers,” Proc. SPIE1864, 186–189 (1993).
    [CrossRef]
  3. R. C. Sharp, D. E. Spock, N. Pan, and J. Elliot, “190-fs passively mode-locked thulium fiber laser with a low threshold,” Opt. Lett.21(12), 881–883 (1996).
    [CrossRef] [PubMed]
  4. S. Kivistö, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser,” IEEE Photon. Technol. Lett.19(12), 934–936 (2007).
    [CrossRef]
  5. Q. Wang, J. Geng, T. Luo, and S. Jiang, “Mode-locked 2 mum laser with highly thulium-doped silicate fiber,” Opt. Lett.34(23), 3616–3618 (2009).
    [CrossRef] [PubMed]
  6. M. A. Solodyankin, E. D. Obraztsova, A. S. Lobach, A. I. Chernov, A. V. Tausenev, V. I. Konov, and E. M. Dianov, “Mode-locked 1.93 μm thulium fiber laser with a carbon nanotube absorber,” Opt. Lett.33(12), 1336–1338 (2008).
    [CrossRef] [PubMed]
  7. A. A. Lagatsky, F. Fusari, S. Calvez, J. A. Gupta, V. E. Kisel, N. V. Kuleshov, C. T. A. Brown, M. D. Dawson, and W. Sibbett, “Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 μm,” Opt. Lett.34(17), 2587–2589 (2009).
    [CrossRef] [PubMed]
  8. A. A. Lagatsky, X. Han, M. D. Serrano, C. Cascales, C. Zaldo, S. Calvez, M. D. Dawson, J. A. Gupta, C. T. A. Brown, and W. Sibbett, “Femtosecond (191 fs) NaY(WO4)2 Tm,Ho-codoped laser at 2060 nm,” Opt. Lett.35(18), 3027–3029 (2010).
    [CrossRef] [PubMed]
  9. A. A. Lagatsky, F. Fusari, S. Calvez, S. V. Kurilchik, V. E. Kisel, N. V. Kuleshov, M. D. Dawson, C. T. A. Brown, and W. Sibbett, “Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 microm,” Opt. Lett.35(2), 172–174 (2010).
    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
  12. W. B. Cho, A. S., J. H. Yim, S. Y. Choi, S. Lee, F. Rotermund, U. Griebner, G. Steinmeyer, V. Petrov, X. Mateos, M. C. Pujo, J. J. Carvajal, M. Aguiló, and F. Díaz, “Passive mode-locking of a Tm-doped bulk laser near 2 µm using a carbon nanotube saturable absorber,” Opt. Express17, 11007–11012 (2009).
  13. K. J. Yang, H. Bromberger, H. Ruf, H. Schäfer, J. Neuhaus, T. Dekorsy, C. V. B. Grimm, M. Helm, K. Biermann, and H. Künzel, “Passively mode-locked Tm,Ho:YAG laser at 2 µm based on saturable absorption of intersubband transitions in quantum wells,” Opt. Express18(7), 6537–6544 (2010).
    [CrossRef] [PubMed]
  14. I. A. Denisov, N. A. Skoptsov, M. S. Gaponenko, A. M. Malyarevich, K. V. Yumashev, and A. A. Lipovskii, “Passive mode locking of 2.09 μm Cr,Tm,Ho:Y3Sc2Al3O12 laser using PbS quantum-dot-doped glass,” Opt. Lett.34(21), 3403–3405 (2009).
    [CrossRef] [PubMed]
  15. J. Ma, G. Q. Xie, W. L. Gao, P. Yuan, L. J. Qian, H. H. Yu, H. J. Zhang, and J. Y. Wang, “Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser,” Opt. Lett.37(8), 1376–1378 (2012).
    [CrossRef] [PubMed]
  16. A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
    [CrossRef]
  17. F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
    [CrossRef]
  18. J. Paajaste, S. Suomalainen, R. Koskinen, A. Härkönen, G. Steinmeyer, and M. Guina, “Dynamic properties of 2 µm GaSb-based semiconductor saturable absorber mirrors,” the 29th North American Molecular Beam Epitaxy Conference, October 14–17, 2012, Georgia, USA; proceeding to be published as a special issue of the Journal of Vacuum Science and Technology.
  19. T. Y. Fan, G. Huber, R. L. Byer, and P. Mitzscherlich, “Continuous-wave operation at 2.1 µm of a diode-laser-pumped, Tm-sensitized Ho:Y3Al5O12 laser at 300 K,” Opt. Lett.12(9), 678–680 (1987).
    [CrossRef] [PubMed]

2012 (3)

2011 (1)

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

2010 (4)

2009 (4)

2008 (2)

2007 (1)

S. Kivistö, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser,” IEEE Photon. Technol. Lett.19(12), 934–936 (2007).
[CrossRef]

1996 (1)

1993 (1)

K. Schepler, B. Smith, F. Heine, and G. Huber, “Passive Q-switching and mode locking of 2-μm lasers,” Proc. SPIE1864, 186–189 (1993).
[CrossRef]

1987 (1)

Aguiló, M.

Alanko, J. P.

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

A. Härkönen, J. Paajaste, S. Suomalainen, J. P. Alanko, C. Grebing, R. Koskinen, G. Steinmeyer, and M. Guina, “Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm,” Opt. Lett.35(24), 4090–4092 (2010).
[CrossRef] [PubMed]

Antipov, O. L.

Bauer, D.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

Biermann, K.

Bromberger, H.

Brown, C. T. A.

Byer, R. L.

Calvez, S.

Carvajal, J. J.

Cascales, C.

Chernov, A. I.

Cho, W. B.

Choi, S. Y.

Dawson, M. D.

Dekorsy, T.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

K. J. Yang, H. Bromberger, H. Ruf, H. Schäfer, J. Neuhaus, T. Dekorsy, C. V. B. Grimm, M. Helm, K. Biermann, and H. Künzel, “Passively mode-locked Tm,Ho:YAG laser at 2 µm based on saturable absorption of intersubband transitions in quantum wells,” Opt. Express18(7), 6537–6544 (2010).
[CrossRef] [PubMed]

Demsar, J.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

Denisov, I. A.

Dianov, E. M.

Díaz, F.

Elliot, J.

Fan, T. Y.

Fusari, F.

Gao, W. L.

Gaponenko, M. S.

Gattass, R. R.

R. R. Gattass and E. Mazur, “Femtosecond laser micromachining in transparent materials,” Nat. Photonics2(4), 219–225 (2008).
[CrossRef]

Geng, J.

Grebing, C.

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

A. Härkönen, J. Paajaste, S. Suomalainen, J. P. Alanko, C. Grebing, R. Koskinen, G. Steinmeyer, and M. Guina, “Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm,” Opt. Lett.35(24), 4090–4092 (2010).
[CrossRef] [PubMed]

Griebner, U.

Grimm, C. V. B.

Guina, M.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

A. Härkönen, J. Paajaste, S. Suomalainen, J. P. Alanko, C. Grebing, R. Koskinen, G. Steinmeyer, and M. Guina, “Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm,” Opt. Lett.35(24), 4090–4092 (2010).
[CrossRef] [PubMed]

S. Kivistö, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser,” IEEE Photon. Technol. Lett.19(12), 934–936 (2007).
[CrossRef]

Gupta, J. A.

Hakulinen, T.

S. Kivistö, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser,” IEEE Photon. Technol. Lett.19(12), 934–936 (2007).
[CrossRef]

Han, X.

Harkonen, A.

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Härkönen, A.

Heine, F.

K. Schepler, B. Smith, F. Heine, and G. Huber, “Passive Q-switching and mode locking of 2-μm lasers,” Proc. SPIE1864, 186–189 (1993).
[CrossRef]

Helm, M.

Huber, G.

Jiang, S.

Kisel, V. E.

Kivistö, S.

S. Kivistö, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser,” IEEE Photon. Technol. Lett.19(12), 934–936 (2007).
[CrossRef]

Kleinbauer, J.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

Konov, V. I.

Koskinen, R.

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

A. Härkönen, J. Paajaste, S. Suomalainen, J. P. Alanko, C. Grebing, R. Koskinen, G. Steinmeyer, and M. Guina, “Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm,” Opt. Lett.35(24), 4090–4092 (2010).
[CrossRef] [PubMed]

Kuleshov, N. V.

Künzel, H.

Kurilchik, S. V.

Lagatsky, A. A.

Lee, S.

Lipovskii, A. A.

Lobach, A. S.

Luo, T.

Ma, J.

Malyarevich, A. M.

Mateos, X.

Mazur, E.

R. R. Gattass and E. Mazur, “Femtosecond laser micromachining in transparent materials,” Nat. Photonics2(4), 219–225 (2008).
[CrossRef]

Mitzscherlich, P.

Neuhaus, J.

Obraztsova, E. D.

Okhotnikov, O. G.

S. Kivistö, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser,” IEEE Photon. Technol. Lett.19(12), 934–936 (2007).
[CrossRef]

Paajaste, J.

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

A. Härkönen, J. Paajaste, S. Suomalainen, J. P. Alanko, C. Grebing, R. Koskinen, G. Steinmeyer, and M. Guina, “Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm,” Opt. Lett.35(24), 4090–4092 (2010).
[CrossRef] [PubMed]

Pan, N.

Petrov, V.

Pujo, M. C.

Puustinen, J.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

Qian, L. J.

Rotermund, F.

Ruf, H.

S., A.

Schäfer, H.

Schättiger, F.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

Schepler, K.

K. Schepler, B. Smith, F. Heine, and G. Huber, “Passive Q-switching and mode locking of 2-μm lasers,” Proc. SPIE1864, 186–189 (1993).
[CrossRef]

Serrano, M. D.

Sharp, R. C.

Sibbett, W.

Skoptsov, N. A.

Smith, B.

K. Schepler, B. Smith, F. Heine, and G. Huber, “Passive Q-switching and mode locking of 2-μm lasers,” Proc. SPIE1864, 186–189 (1993).
[CrossRef]

Solodyankin, M. A.

Spock, D. E.

Steinmeyer, G.

Suomalainen, S.

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

A. Härkönen, J. Paajaste, S. Suomalainen, J. P. Alanko, C. Grebing, R. Koskinen, G. Steinmeyer, and M. Guina, “Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm,” Opt. Lett.35(24), 4090–4092 (2010).
[CrossRef] [PubMed]

Sutter, D. H.

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

Tausenev, A. V.

Wang, J. Y.

Wang, Q.

Xie, G. Q.

Yang, K. J.

Yim, J. H.

Yu, H. H.

Yuan, P.

Yumashev, K. V.

Zaldo, C.

Zhang, H. J.

Appl. Phys. B (1)

F. Schättiger, D. Bauer, J. Demsar, T. Dekorsy, J. Kleinbauer, D. H. Sutter, J. Puustinen, and M. Guina, “Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers,” Appl. Phys. B106(3), 605–612 (2012).
[CrossRef]

Electron. Lett. (1)

A. Harkonen, C. Grebing, J. Paajaste, R. Koskinen, J. P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pules at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

S. Kivistö, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser,” IEEE Photon. Technol. Lett.19(12), 934–936 (2007).
[CrossRef]

Nat. Photonics (1)

R. R. Gattass and E. Mazur, “Femtosecond laser micromachining in transparent materials,” Nat. Photonics2(4), 219–225 (2008).
[CrossRef]

Opt. Express (3)

Opt. Lett. (10)

I. A. Denisov, N. A. Skoptsov, M. S. Gaponenko, A. M. Malyarevich, K. V. Yumashev, and A. A. Lipovskii, “Passive mode locking of 2.09 μm Cr,Tm,Ho:Y3Sc2Al3O12 laser using PbS quantum-dot-doped glass,” Opt. Lett.34(21), 3403–3405 (2009).
[CrossRef] [PubMed]

J. Ma, G. Q. Xie, W. L. Gao, P. Yuan, L. J. Qian, H. H. Yu, H. J. Zhang, and J. Y. Wang, “Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser,” Opt. Lett.37(8), 1376–1378 (2012).
[CrossRef] [PubMed]

R. C. Sharp, D. E. Spock, N. Pan, and J. Elliot, “190-fs passively mode-locked thulium fiber laser with a low threshold,” Opt. Lett.21(12), 881–883 (1996).
[CrossRef] [PubMed]

A. Härkönen, J. Paajaste, S. Suomalainen, J. P. Alanko, C. Grebing, R. Koskinen, G. Steinmeyer, and M. Guina, “Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm,” Opt. Lett.35(24), 4090–4092 (2010).
[CrossRef] [PubMed]

Q. Wang, J. Geng, T. Luo, and S. Jiang, “Mode-locked 2 mum laser with highly thulium-doped silicate fiber,” Opt. Lett.34(23), 3616–3618 (2009).
[CrossRef] [PubMed]

M. A. Solodyankin, E. D. Obraztsova, A. S. Lobach, A. I. Chernov, A. V. Tausenev, V. I. Konov, and E. M. Dianov, “Mode-locked 1.93 μm thulium fiber laser with a carbon nanotube absorber,” Opt. Lett.33(12), 1336–1338 (2008).
[CrossRef] [PubMed]

A. A. Lagatsky, F. Fusari, S. Calvez, J. A. Gupta, V. E. Kisel, N. V. Kuleshov, C. T. A. Brown, M. D. Dawson, and W. Sibbett, “Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 μm,” Opt. Lett.34(17), 2587–2589 (2009).
[CrossRef] [PubMed]

A. A. Lagatsky, X. Han, M. D. Serrano, C. Cascales, C. Zaldo, S. Calvez, M. D. Dawson, J. A. Gupta, C. T. A. Brown, and W. Sibbett, “Femtosecond (191 fs) NaY(WO4)2 Tm,Ho-codoped laser at 2060 nm,” Opt. Lett.35(18), 3027–3029 (2010).
[CrossRef] [PubMed]

A. A. Lagatsky, F. Fusari, S. Calvez, S. V. Kurilchik, V. E. Kisel, N. V. Kuleshov, M. D. Dawson, C. T. A. Brown, and W. Sibbett, “Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 microm,” Opt. Lett.35(2), 172–174 (2010).
[CrossRef] [PubMed]

T. Y. Fan, G. Huber, R. L. Byer, and P. Mitzscherlich, “Continuous-wave operation at 2.1 µm of a diode-laser-pumped, Tm-sensitized Ho:Y3Al5O12 laser at 300 K,” Opt. Lett.12(9), 678–680 (1987).
[CrossRef] [PubMed]

Proc. SPIE (1)

K. Schepler, B. Smith, F. Heine, and G. Huber, “Passive Q-switching and mode locking of 2-μm lasers,” Proc. SPIE1864, 186–189 (1993).
[CrossRef]

Other (1)

J. Paajaste, S. Suomalainen, R. Koskinen, A. Härkönen, G. Steinmeyer, and M. Guina, “Dynamic properties of 2 µm GaSb-based semiconductor saturable absorber mirrors,” the 29th North American Molecular Beam Epitaxy Conference, October 14–17, 2012, Georgia, USA; proceeding to be published as a special issue of the Journal of Vacuum Science and Technology.

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Figures (6)

Fig. 1
Fig. 1

Low-intensity reflectivity spectra of GaInAs SESAM and 2 QWs and 3 QWs GaSb based SESAMs.

Fig. 2
Fig. 2

CW and mode-locked Tm,Ho:YAG laser setup.

Fig. 3
Fig. 3

Spectrum of cw Tm,Ho:YAG laser with output coupler of (a) T = 1%, (b) T = 2%.

Fig. 4
Fig. 4

Output power of cw and mode-locked Tm,Ho:YAG laser

Fig. 5
Fig. 5

RF spectrum of continuous wave mode-locked Tm,Ho:YAG laser. RBW: resolution bandwidth.

Fig. 6
Fig. 6

Autocorrelation signal and spectra from mode-locked Tm,Ho:YAG laser.

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