Abstract

We demonstrate, for the first time, passively Q-switched laser operation of Yb:Y3Ga5O12 garnet crystal. An output power of 4.53 W at 1031 nm was generated at a pulse repetition rate of 55.6 kHz, with a Cr4+:YAG crystal acting as saturable absorber whose initial transmission was 97.5%, the corresponding pulse energy, duration and peak power were respectively 81.5 μJ, 28.5 ns and 2.86 kW. Laser pulses at a lower repetition rate of 18.2 kHz were also achieved at 1025 nm while the initial transmission of the Cr4+:YAG crystal was 85.0%, with an output power measured to be 2.56 W, the resulting pulse energy, duration, and peak power being 140.8 μJ, 5.9 ns, and 23.9 kW, respectively.

© 2013 OSA

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  1. S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
    [CrossRef]
  2. A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B23(4), 676–683 (2006).
    [CrossRef]
  3. B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
    [CrossRef]
  4. Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
    [CrossRef]
  5. Y. Zhang, Z. Wei, B. Zhou, C. Xu, Y. Zou, D. Li, Z. Zhang, H. Zhang, J. Wang, H. Yu, K. Wu, B. Yao, and J. Wang, “Diode-pumped passively mode-locked Yb:Y3Ga5O12 laser,” Opt. Lett.34(21), 3316–3318 (2009).
    [CrossRef] [PubMed]
  6. H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
    [CrossRef]
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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
  10. J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett.32(22), 3266–3268 (2007).
    [CrossRef] [PubMed]
  11. J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express17(14), 11537–11542 (2009).
    [CrossRef] [PubMed]
  12. Y. Zhang, Z. Wei, Q. Wang, D. Li, Z. Zhang, H. Yu, H. Zhang, J. Wang, and L. Lv, “Diode-pumped efficient continuous-wave Yb:Y3Ga5O12 laser at 1035 nm,” Opt. Lett.36(4), 472–474 (2011).
    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]

2012

2011

2010

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

K. Beil, S. T. Fredrich-Thornton, F. Tellkamp, R. Peters, C. Kränkel, K. Petermann, and G. Huber, “Thermal and laser properties of Yb:LuAG for kW thin disk lasers,” Opt. Express18(20), 20712–20722 (2010).
[CrossRef] [PubMed]

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

2009

2007

2006

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B23(4), 676–683 (2006).
[CrossRef]

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

2005

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express13(19), 7708–7719 (2005).
[CrossRef] [PubMed]

2003

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Balembois, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Beil, K.

Boughton, R. I.

Boulon, G.

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B23(4), 676–683 (2006).
[CrossRef]

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Brenier, A.

Canibano, H.

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B23(4), 676–683 (2006).
[CrossRef]

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

Chang, J.

Chénais, S.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Deng, P.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

Ding, S.

Dong, J.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett.32(22), 3266–3268 (2007).
[CrossRef] [PubMed]

Druon, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Eganyan, A.

Fredrich-Thornton, S. T.

Fukuda, T.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

Georges, P.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Goutaudier, C.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

Guyot, Y.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B23(4), 676–683 (2006).
[CrossRef]

Han, W.

Hao, L.

He, J.

Huber, G.

Jaque, D.

Jiang, B.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

Jiang, M.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

Kaminskii, A. A.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett.32(22), 3266–3268 (2007).
[CrossRef] [PubMed]

Kränkel, C.

Li, D.

Li, J.

Li, P.

Li, S.

Liang, X.

Liu, J.

Lv, L.

Novoselov, A.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

Petermann, K.

Peters, R.

Petrosyan, A. G.

Ródenas, A.

Song, P.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

Tellkamp, F.

Tian, X.

Ueda, K.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett.32(22), 3266–3268 (2007).
[CrossRef] [PubMed]

Wang, J.

Wang, Q.

Wang, X.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

Wang, Y.

Wang, Z.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express13(19), 7708–7719 (2005).
[CrossRef] [PubMed]

Wei, Z.

Wu, K.

Xu, C.

Xu, J.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express17(14), 11537–11542 (2009).
[CrossRef] [PubMed]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

Xu, X.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express17(14), 11537–11542 (2009).
[CrossRef] [PubMed]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

Xu, Z.

Yao, B.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

Y. Zhang, Z. Wei, B. Zhou, C. Xu, Y. Zou, D. Li, Z. Zhang, H. Zhang, J. Wang, H. Yu, K. Wu, B. Yao, and J. Wang, “Diode-pumped passively mode-locked Yb:Y3Ga5O12 laser,” Opt. Lett.34(21), 3316–3318 (2009).
[CrossRef] [PubMed]

Yoshikawa, A.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

Yu, H.

Zhang, H.

Zhang, S.

Zhang, X.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express13(19), 7708–7719 (2005).
[CrossRef] [PubMed]

Zhang, Y.

Zhang, Z.

Zhao, Z.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express17(14), 11537–11542 (2009).
[CrossRef] [PubMed]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

Zhou, B.

Zhou, Z.

Zou, Y.

IEEE J. Quantum Electron.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

J. Cryst. Growth

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth277(1-4), 186–191 (2005).
[CrossRef]

J. Opt. Soc. Am. B

Laser Phys. Lett.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

Opt. Express

Opt. Lett.

Opt. Mater.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater.28(1-2), 1–8 (2006).
[CrossRef]

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Figures (7)

Fig. 1
Fig. 1

Output power versus Pabs for cw laser operation obtained with Yb:YGG crystals of different lengths.

Fig. 2
Fig. 2

Emission spectra measured for cw laser operation obtained with Yb:YGG crystals of different lengths at an intermediate pump level (a) and the highest pump power (b).

Fig. 3
Fig. 3

Emission spectra measured at Pabs = 5.82 W for the laser operation generated with the 4 mm thick crystal, showing the dependence of oscillation wavelengths on the output coupling utilized.

Fig. 4
Fig. 4

Gain cross section versus wavelength for the Yb:YGG crystal, calculated for a number of small magnitudes of the parameter β.

Fig. 5
Fig. 5

Average output power versus Pabs for Q-switched laser operation generated with the 4 mm thick crystal under different conditions of T = 20%, T0 = 97.5%; T = 30%, T0 = 94.4%; T = 30%, T0 = 90.0%; and T = 30%, T0 = 85.0%.

Fig. 6
Fig. 6

Typical pulse profiles measured at Pabs = 6.02 W under different operational conditions.

Fig. 7
Fig. 7

Emission spectra measured at Pabs = 6.02 W for Q-switched operation generated under different operational conditions.

Tables (1)

Tables Icon

Table 1 Parameters Characterizing the Passively Q-switched Yb:YGG laser

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