Abstract

Combination of the oxidation of reaction-sintered silicon carbide (RS-SiC) and the polishing of the oxide is an effective way of machining RS-SiC. In this study, anodic oxidation, thermal oxidation, and plasma oxidation were respectively conducted to obtain oxides on RS-SiC surfaces. By performing scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM-EDX) analysis and scanning white light interferometry (SWLI) measurement, the oxidation behavior of these oxidation methods was compared. Through ceria slurry polishing, the polishing properties of the oxides were evaluated. Analysis of the oxygen element on polished surfaces by SEM-EDX was conducted to evaluate the remaining oxide. By analyzing the three oxidation methods with corresponding polishing process on the basis of schematic diagrams, suitable application conditions for these methods were clarified. Anodic oxidation with simultaneous polishing is suitable for the rapid figuring of RS-SiC with a high material removal rate; polishing of a thermally oxidized surface is suitable for machining RS-SiC mirrors with complex shapes; combination of plasma oxidation and polishing is suitable for the fine finishing of RS-SiC with excellent surface roughness. These oxidation methods are expected to improve the machining of RS-SiC substrates and promote the application of RS-SiC products in the fields of optics, molds, and ceramics.

© 2013 Optical Society of America

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  1. S. Suyama, T. Kameda, and Y. Itoh, “Development of high-strength reaction-sintered silicon carbide,” Diamond Related Materials12(3–7), 1201–1204 (2003).
    [CrossRef]
  2. S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
    [CrossRef]
  3. A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
    [CrossRef]
  4. D. A. Ersoy, M. J. McNallan, and Y. Gogotsi, “Carbon coatings produced by high temperature chlorination of silicon carbide ceramics,” Mater. Res. Innovations5(2), 55–62 (2001).
    [CrossRef]
  5. X. M. Shen, Y. F. Dai, H. Deng, C. L. Guan, and K. Yamamura, “Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing,” Opt. Express21(12), 14780–14788 (2013).
    [CrossRef] [PubMed]
  6. S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
    [CrossRef]
  7. S. Suyama, Y. Itoh, K. Tsuno, and K. Ohno, “Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide,” Proc. SPIE5868, 58680E, 58680E-10 (2005).
    [CrossRef]
  8. H. Y. Tam, H. B. Cheng, and Y. W. Wang, “Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components,” J. Mater. Process. Technol.192–193, 276–280 (2007).
    [CrossRef]
  9. H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
    [CrossRef]
  10. Z. Y. Zhang, J. W. Yan, and T. Kuriyagawa, “Study on tool wear characteristics in diamond turning of reaction-bonded silicon carbide,” Int. J. Adv. Manuf. Technol.57(1–4), 117–125 (2011).
    [CrossRef]
  11. Y. W. Kim, M. Mitomo, H. Emoto, and J. G. Lee, “Effect of Initial α‐Phase Content on Microstructure and Mechanical Properties of Sintered Silicon Carbide,” J. Am. Ceram. Soc.81(12), 3136–3140 (1998).
    [CrossRef]
  12. O. P. Chakrabarti, P. K. Das, and J. Mukerji, “Growth of SiC particles in reaction sintered SiC,” Mater. Chem. Phys.67(1–3), 199–202 (2001).
    [CrossRef]
  13. T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
    [CrossRef]
  14. S. S. Shinozaki, J. E. Noakes, and H. Sato, “Recrystallization and Phase Transformation in Reaction-Sintered SiC,” J. Am. Ceram. Soc.61(5–6), 237–242 (1978).
    [CrossRef]
  15. J. Yan, Z. Zhang, and T. Kuriyagawa, “Mechanism for material removal in diamond turning of reaction-bonded silicon carbide,” Int. J. Mach. Tools Manuf.49(5), 366–374 (2009).
    [CrossRef]
  16. H. Cheng, Z. Feng, Y. Wang, and S. Lei, “Magnetorheological finishing of SiC aspheric mirrors,” Mater. Manuf. Process.20(6), 917–931 (2005).
    [CrossRef]
  17. H. Deng and K. Yamamura, “Smoothing of reaction sintered silicon carbide using plasma assisted polishing,” Curr. Appl. Phys.12(3), S24–S28 (2012).
    [CrossRef]
  18. K. Yamamura, Y. Yamamoto, and H. Deng, “Preliminary Study on Chemical Figuring and Finishing of Sintered SiC Substrate Using Atmospheric Pressure Plasma,” in 45th CIRP Conference on Manufacturing Systems 2012 3, 335–339 (2012).
  19. Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
    [CrossRef]
  20. B. E. Deal and A. S. Grove, “General Relationship for the Thermal Oxidation of Silicon,” J. Appl. Phys.36(12), 3770–3778 (1965).
    [CrossRef]
  21. K. Yamauchi, H. Mimura, K. Inagaki, and Y. Mori, “Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining,” Rev. Sci. Instrum.73(11), 4028–4033 (2002).
    [CrossRef]
  22. F. H. Zhang, X. Z. Song, Y. Zhang, and D. R. Luan, “Figuring of an ultra-smooth surface in nanoparticle colloid jet machining,” J. Micromech. Microeng.19(5), 054009 (2009).
    [CrossRef]
  23. J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
    [CrossRef]
  24. A. B. Shorey, K. M. Kwong, K. M. Johnson, and S. D. Jacobs, “Nanoindentation hardness of particles used in magnetorheological finishing (MRF),” Appl. Opt.39(28), 5194–5204 (2000).
    [CrossRef] [PubMed]
  25. E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, “Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry and near-interface traps,” J. Appl. Phys.97(3), 034302 (2005).
    [CrossRef]
  26. J. S. Williams, B. Haberl, and J. E. Bradby, “Nanoindentation of ion implanted and deposited amorphous silicon,” MRS Online Proceedings Library 843, T6.3.1/R10.3.1- T6.3.5/R10.3.5 (2005),DOI: http://dx.doi.org/10.1557/PROC-843-T6.3/R10.3 .

2013 (1)

2012 (1)

H. Deng and K. Yamamura, “Smoothing of reaction sintered silicon carbide using plasma assisted polishing,” Curr. Appl. Phys.12(3), S24–S28 (2012).
[CrossRef]

2011 (1)

Z. Y. Zhang, J. W. Yan, and T. Kuriyagawa, “Study on tool wear characteristics in diamond turning of reaction-bonded silicon carbide,” Int. J. Adv. Manuf. Technol.57(1–4), 117–125 (2011).
[CrossRef]

2009 (2)

J. Yan, Z. Zhang, and T. Kuriyagawa, “Mechanism for material removal in diamond turning of reaction-bonded silicon carbide,” Int. J. Mach. Tools Manuf.49(5), 366–374 (2009).
[CrossRef]

F. H. Zhang, X. Z. Song, Y. Zhang, and D. R. Luan, “Figuring of an ultra-smooth surface in nanoparticle colloid jet machining,” J. Micromech. Microeng.19(5), 054009 (2009).
[CrossRef]

2007 (1)

H. Y. Tam, H. B. Cheng, and Y. W. Wang, “Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components,” J. Mater. Process. Technol.192–193, 276–280 (2007).
[CrossRef]

2006 (1)

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

2005 (3)

S. Suyama, Y. Itoh, K. Tsuno, and K. Ohno, “Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide,” Proc. SPIE5868, 58680E, 58680E-10 (2005).
[CrossRef]

H. Cheng, Z. Feng, Y. Wang, and S. Lei, “Magnetorheological finishing of SiC aspheric mirrors,” Mater. Manuf. Process.20(6), 917–931 (2005).
[CrossRef]

E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, “Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry and near-interface traps,” J. Appl. Phys.97(3), 034302 (2005).
[CrossRef]

2004 (1)

Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
[CrossRef]

2003 (1)

S. Suyama, T. Kameda, and Y. Itoh, “Development of high-strength reaction-sintered silicon carbide,” Diamond Related Materials12(3–7), 1201–1204 (2003).
[CrossRef]

2002 (2)

J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
[CrossRef]

K. Yamauchi, H. Mimura, K. Inagaki, and Y. Mori, “Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining,” Rev. Sci. Instrum.73(11), 4028–4033 (2002).
[CrossRef]

2001 (3)

D. A. Ersoy, M. J. McNallan, and Y. Gogotsi, “Carbon coatings produced by high temperature chlorination of silicon carbide ceramics,” Mater. Res. Innovations5(2), 55–62 (2001).
[CrossRef]

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

O. P. Chakrabarti, P. K. Das, and J. Mukerji, “Growth of SiC particles in reaction sintered SiC,” Mater. Chem. Phys.67(1–3), 199–202 (2001).
[CrossRef]

2000 (1)

1999 (1)

A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
[CrossRef]

1998 (2)

Y. W. Kim, M. Mitomo, H. Emoto, and J. G. Lee, “Effect of Initial α‐Phase Content on Microstructure and Mechanical Properties of Sintered Silicon Carbide,” J. Am. Ceram. Soc.81(12), 3136–3140 (1998).
[CrossRef]

S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
[CrossRef]

1997 (1)

T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
[CrossRef]

1978 (1)

S. S. Shinozaki, J. E. Noakes, and H. Sato, “Recrystallization and Phase Transformation in Reaction-Sintered SiC,” J. Am. Ceram. Soc.61(5–6), 237–242 (1978).
[CrossRef]

1965 (1)

B. E. Deal and A. S. Grove, “General Relationship for the Thermal Oxidation of Silicon,” J. Appl. Phys.36(12), 3770–3778 (1965).
[CrossRef]

Abe, H.

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

Bae, D. S.

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

Chakrabarti, O. P.

O. P. Chakrabarti, P. K. Das, and J. Mukerji, “Growth of SiC particles in reaction sintered SiC,” Mater. Chem. Phys.67(1–3), 199–202 (2001).
[CrossRef]

Cheng, H.

H. Cheng, Z. Feng, Y. Wang, and S. Lei, “Magnetorheological finishing of SiC aspheric mirrors,” Mater. Manuf. Process.20(6), 917–931 (2005).
[CrossRef]

Cheng, H. B.

H. Y. Tam, H. B. Cheng, and Y. W. Wang, “Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components,” J. Mater. Process. Technol.192–193, 276–280 (2007).
[CrossRef]

Chung, G.

Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
[CrossRef]

Dai, Y. F.

Das, P. K.

O. P. Chakrabarti, P. K. Das, and J. Mukerji, “Growth of SiC particles in reaction sintered SiC,” Mater. Chem. Phys.67(1–3), 199–202 (2001).
[CrossRef]

Deal, B. E.

B. E. Deal and A. S. Grove, “General Relationship for the Thermal Oxidation of Silicon,” J. Appl. Phys.36(12), 3770–3778 (1965).
[CrossRef]

Deng, H.

Dhar, S.

Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
[CrossRef]

Einarsrud, M. A.

T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
[CrossRef]

Emoto, H.

Y. W. Kim, M. Mitomo, H. Emoto, and J. G. Lee, “Effect of Initial α‐Phase Content on Microstructure and Mechanical Properties of Sintered Silicon Carbide,” J. Am. Ceram. Soc.81(12), 3136–3140 (1998).
[CrossRef]

Ersoy, D. A.

D. A. Ersoy, M. J. McNallan, and Y. Gogotsi, “Carbon coatings produced by high temperature chlorination of silicon carbide ceramics,” Mater. Res. Innovations5(2), 55–62 (2001).
[CrossRef]

Feldman, L. C.

Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
[CrossRef]

Feng, Z.

H. Cheng, Z. Feng, Y. Wang, and S. Lei, “Magnetorheological finishing of SiC aspheric mirrors,” Mater. Manuf. Process.20(6), 917–931 (2005).
[CrossRef]

Gogotsi, Y.

D. A. Ersoy, M. J. McNallan, and Y. Gogotsi, “Carbon coatings produced by high temperature chlorination of silicon carbide ceramics,” Mater. Res. Innovations5(2), 55–62 (2001).
[CrossRef]

Grande, T.

T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
[CrossRef]

Grove, A. S.

B. E. Deal and A. S. Grove, “General Relationship for the Thermal Oxidation of Silicon,” J. Appl. Phys.36(12), 3770–3778 (1965).
[CrossRef]

Guan, C. L.

Hagen, E.

T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
[CrossRef]

He, D.

J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
[CrossRef]

Inagaki, K.

K. Yamauchi, H. Mimura, K. Inagaki, and Y. Mori, “Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining,” Rev. Sci. Instrum.73(11), 4028–4033 (2002).
[CrossRef]

Itoh, Y.

S. Suyama, Y. Itoh, K. Tsuno, and K. Ohno, “Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide,” Proc. SPIE5868, 58680E, 58680E-10 (2005).
[CrossRef]

S. Suyama, T. Kameda, and Y. Itoh, “Development of high-strength reaction-sintered silicon carbide,” Diamond Related Materials12(3–7), 1201–1204 (2003).
[CrossRef]

A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
[CrossRef]

Jacobs, S. D.

Johnson, K. M.

Kameda, T.

S. Suyama, T. Kameda, and Y. Itoh, “Development of high-strength reaction-sintered silicon carbide,” Diamond Related Materials12(3–7), 1201–1204 (2003).
[CrossRef]

Kim, Y. W.

Y. W. Kim, M. Mitomo, H. Emoto, and J. G. Lee, “Effect of Initial α‐Phase Content on Microstructure and Mechanical Properties of Sintered Silicon Carbide,” J. Am. Ceram. Soc.81(12), 3136–3140 (1998).
[CrossRef]

Kitahara, H.

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

Kohyama, A.

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

Kuriyagawa, T.

Z. Y. Zhang, J. W. Yan, and T. Kuriyagawa, “Study on tool wear characteristics in diamond turning of reaction-bonded silicon carbide,” Int. J. Adv. Manuf. Technol.57(1–4), 117–125 (2011).
[CrossRef]

J. Yan, Z. Zhang, and T. Kuriyagawa, “Mechanism for material removal in diamond turning of reaction-bonded silicon carbide,” Int. J. Mach. Tools Manuf.49(5), 366–374 (2009).
[CrossRef]

Kwong, K. M.

Lee, J. G.

Y. W. Kim, M. Mitomo, H. Emoto, and J. G. Lee, “Effect of Initial α‐Phase Content on Microstructure and Mechanical Properties of Sintered Silicon Carbide,” J. Am. Ceram. Soc.81(12), 3136–3140 (1998).
[CrossRef]

Lee, S. P.

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

Lei, S.

H. Cheng, Z. Feng, Y. Wang, and S. Lei, “Magnetorheological finishing of SiC aspheric mirrors,” Mater. Manuf. Process.20(6), 917–931 (2005).
[CrossRef]

Luan, D. R.

F. H. Zhang, X. Z. Song, Y. Zhang, and D. R. Luan, “Figuring of an ultra-smooth surface in nanoparticle colloid jet machining,” J. Micromech. Microeng.19(5), 054009 (2009).
[CrossRef]

Masuda, H.

S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
[CrossRef]

McNallan, M. J.

D. A. Ersoy, M. J. McNallan, and Y. Gogotsi, “Carbon coatings produced by high temperature chlorination of silicon carbide ceramics,” Mater. Res. Innovations5(2), 55–62 (2001).
[CrossRef]

Mimura, H.

K. Yamauchi, H. Mimura, K. Inagaki, and Y. Mori, “Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining,” Rev. Sci. Instrum.73(11), 4028–4033 (2002).
[CrossRef]

Min, B. H.

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

Mitomo, M.

Y. W. Kim, M. Mitomo, H. Emoto, and J. G. Lee, “Effect of Initial α‐Phase Content on Microstructure and Mechanical Properties of Sintered Silicon Carbide,” J. Am. Ceram. Soc.81(12), 3136–3140 (1998).
[CrossRef]

Mori, Y.

K. Yamauchi, H. Mimura, K. Inagaki, and Y. Mori, “Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining,” Rev. Sci. Instrum.73(11), 4028–4033 (2002).
[CrossRef]

Mukerji, J.

O. P. Chakrabarti, P. K. Das, and J. Mukerji, “Growth of SiC particles in reaction sintered SiC,” Mater. Chem. Phys.67(1–3), 199–202 (2001).
[CrossRef]

Nakagawa, S.

A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
[CrossRef]

Nakao, M.

S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
[CrossRef]

Nakashima, H.

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

Noakes, J. E.

S. S. Shinozaki, J. E. Noakes, and H. Sato, “Recrystallization and Phase Transformation in Reaction-Sintered SiC,” J. Am. Ceram. Soc.61(5–6), 237–242 (1978).
[CrossRef]

Noda, Y.

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

Ohno, K.

S. Suyama, Y. Itoh, K. Tsuno, and K. Ohno, “Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide,” Proc. SPIE5868, 58680E, 58680E-10 (2005).
[CrossRef]

Ólafsson, H. Ö.

E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, “Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry and near-interface traps,” J. Appl. Phys.97(3), 034302 (2005).
[CrossRef]

Ozawa, A.

S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
[CrossRef]

Pang, S. W.

S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
[CrossRef]

Park, J. S.

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

Pippel, E.

E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, “Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry and near-interface traps,” J. Appl. Phys.97(3), 034302 (2005).
[CrossRef]

Qian, J.

J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
[CrossRef]

Sato, H.

S. S. Shinozaki, J. E. Noakes, and H. Sato, “Recrystallization and Phase Transformation in Reaction-Sintered SiC,” J. Am. Ceram. Soc.61(5–6), 237–242 (1978).
[CrossRef]

Sayano, A.

A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
[CrossRef]

Shen, X. M.

Shin, Y. S.

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

Shinohara, N.

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

Shinozaki, S. S.

S. S. Shinozaki, J. E. Noakes, and H. Sato, “Recrystallization and Phase Transformation in Reaction-Sintered SiC,” J. Am. Ceram. Soc.61(5–6), 237–242 (1978).
[CrossRef]

Shorey, A. B.

Sommerset, H.

T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
[CrossRef]

Song, X. Z.

F. H. Zhang, X. Z. Song, Y. Zhang, and D. R. Luan, “Figuring of an ultra-smooth surface in nanoparticle colloid jet machining,” J. Micromech. Microeng.19(5), 054009 (2009).
[CrossRef]

Song, Y.

Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
[CrossRef]

Sutoh, C.

A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
[CrossRef]

Suyama, S.

S. Suyama, Y. Itoh, K. Tsuno, and K. Ohno, “Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide,” Proc. SPIE5868, 58680E, 58680E-10 (2005).
[CrossRef]

S. Suyama, T. Kameda, and Y. Itoh, “Development of high-strength reaction-sintered silicon carbide,” Diamond Related Materials12(3–7), 1201–1204 (2003).
[CrossRef]

A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
[CrossRef]

Sveinbjörnsson, E. Ö.

E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, “Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry and near-interface traps,” J. Appl. Phys.97(3), 034302 (2005).
[CrossRef]

Tam, H. Y.

H. Y. Tam, H. B. Cheng, and Y. W. Wang, “Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components,” J. Mater. Process. Technol.192–193, 276–280 (2007).
[CrossRef]

Tamamura, T.

S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
[CrossRef]

Tsuno, K.

S. Suyama, Y. Itoh, K. Tsuno, and K. Ohno, “Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide,” Proc. SPIE5868, 58680E, 58680E-10 (2005).
[CrossRef]

Voronin, G.

J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
[CrossRef]

Wang, Y.

H. Cheng, Z. Feng, Y. Wang, and S. Lei, “Magnetorheological finishing of SiC aspheric mirrors,” Mater. Manuf. Process.20(6), 917–931 (2005).
[CrossRef]

Wang, Y. W.

H. Y. Tam, H. B. Cheng, and Y. W. Wang, “Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components,” J. Mater. Process. Technol.192–193, 276–280 (2007).
[CrossRef]

Wiik, K.

T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
[CrossRef]

Williams, J. R.

Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
[CrossRef]

Woltersdorf, J.

E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, “Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry and near-interface traps,” J. Appl. Phys.97(3), 034302 (2005).
[CrossRef]

Yamamura, K.

Yamauchi, K.

K. Yamauchi, H. Mimura, K. Inagaki, and Y. Mori, “Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining,” Rev. Sci. Instrum.73(11), 4028–4033 (2002).
[CrossRef]

Yan, J.

J. Yan, Z. Zhang, and T. Kuriyagawa, “Mechanism for material removal in diamond turning of reaction-bonded silicon carbide,” Int. J. Mach. Tools Manuf.49(5), 366–374 (2009).
[CrossRef]

Yan, J. W.

Z. Y. Zhang, J. W. Yan, and T. Kuriyagawa, “Study on tool wear characteristics in diamond turning of reaction-bonded silicon carbide,” Int. J. Adv. Manuf. Technol.57(1–4), 117–125 (2011).
[CrossRef]

Yoshida, F.

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

Zerda, T. W.

J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
[CrossRef]

Zhang, F. H.

F. H. Zhang, X. Z. Song, Y. Zhang, and D. R. Luan, “Figuring of an ultra-smooth surface in nanoparticle colloid jet machining,” J. Micromech. Microeng.19(5), 054009 (2009).
[CrossRef]

Zhang, Y.

F. H. Zhang, X. Z. Song, Y. Zhang, and D. R. Luan, “Figuring of an ultra-smooth surface in nanoparticle colloid jet machining,” J. Micromech. Microeng.19(5), 054009 (2009).
[CrossRef]

Zhang, Z.

J. Yan, Z. Zhang, and T. Kuriyagawa, “Mechanism for material removal in diamond turning of reaction-bonded silicon carbide,” Int. J. Mach. Tools Manuf.49(5), 366–374 (2009).
[CrossRef]

Zhang, Z. Y.

Z. Y. Zhang, J. W. Yan, and T. Kuriyagawa, “Study on tool wear characteristics in diamond turning of reaction-bonded silicon carbide,” Int. J. Adv. Manuf. Technol.57(1–4), 117–125 (2011).
[CrossRef]

Zhao, Y.

J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
[CrossRef]

Appl. Opt. (1)

Curr. Appl. Phys. (1)

H. Deng and K. Yamamura, “Smoothing of reaction sintered silicon carbide using plasma assisted polishing,” Curr. Appl. Phys.12(3), S24–S28 (2012).
[CrossRef]

Diamond Related Materials (1)

S. Suyama, T. Kameda, and Y. Itoh, “Development of high-strength reaction-sintered silicon carbide,” Diamond Related Materials12(3–7), 1201–1204 (2003).
[CrossRef]

Fusion Eng. Des. (1)

S. P. Lee, Y. S. Shin, D. S. Bae, B. H. Min, J. S. Park, and A. Kohyama, “Fabrication of liquid phase sintered SiC materials and their characterization,” Fusion Eng. Des.81(8–14), 963–967 (2006).
[CrossRef]

Int. J. Adv. Manuf. Technol. (1)

Z. Y. Zhang, J. W. Yan, and T. Kuriyagawa, “Study on tool wear characteristics in diamond turning of reaction-bonded silicon carbide,” Int. J. Adv. Manuf. Technol.57(1–4), 117–125 (2011).
[CrossRef]

Int. J. Mach. Tools Manuf. (1)

J. Yan, Z. Zhang, and T. Kuriyagawa, “Mechanism for material removal in diamond turning of reaction-bonded silicon carbide,” Int. J. Mach. Tools Manuf.49(5), 366–374 (2009).
[CrossRef]

J. Am. Ceram. Soc. (3)

Y. W. Kim, M. Mitomo, H. Emoto, and J. G. Lee, “Effect of Initial α‐Phase Content on Microstructure and Mechanical Properties of Sintered Silicon Carbide,” J. Am. Ceram. Soc.81(12), 3136–3140 (1998).
[CrossRef]

T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, “Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide,” J. Am. Ceram. Soc.80(4), 1047–1052 (1997).
[CrossRef]

S. S. Shinozaki, J. E. Noakes, and H. Sato, “Recrystallization and Phase Transformation in Reaction-Sintered SiC,” J. Am. Ceram. Soc.61(5–6), 237–242 (1978).
[CrossRef]

J. Appl. Phys. (3)

Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, “Modified Deal Grove model for the thermal oxidation of silicon carbide,” J. Appl. Phys.95(9), 4953–4957 (2004).
[CrossRef]

B. E. Deal and A. S. Grove, “General Relationship for the Thermal Oxidation of Silicon,” J. Appl. Phys.36(12), 3770–3778 (1965).
[CrossRef]

E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, “Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry and near-interface traps,” J. Appl. Phys.97(3), 034302 (2005).
[CrossRef]

J. Ceram. Soc. Jpn. (1)

H. Kitahara, Y. Noda, F. Yoshida, H. Nakashima, N. Shinohara, and H. Abe, “Mechanical behavior of single-crystalline and polycrystalline silicon carbides evaluated by Vickers indentation,” J. Ceram. Soc. Jpn.109(1271), 602–606 (2001).
[CrossRef]

J. Mater. Process. Technol. (1)

H. Y. Tam, H. B. Cheng, and Y. W. Wang, “Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components,” J. Mater. Process. Technol.192–193, 276–280 (2007).
[CrossRef]

J. Mater. Res. (1)

J. Qian, G. Voronin, T. W. Zerda, D. He, and Y. Zhao, “High pressure, high temperature sintering of diamond-SiC composites by ball milled diamond-Si mixtures,” J. Mater. Res.17(08), 2153–2160 (2002).
[CrossRef]

J. Micromech. Microeng. (1)

F. H. Zhang, X. Z. Song, Y. Zhang, and D. R. Luan, “Figuring of an ultra-smooth surface in nanoparticle colloid jet machining,” J. Micromech. Microeng.19(5), 054009 (2009).
[CrossRef]

J. Nucl. Mater. (1)

A. Sayano, C. Sutoh, S. Suyama, Y. Itoh, and S. Nakagawa, “Development of a reaction-sintered silicon carbide matrix composite,” J. Nucl. Mater.271–272, 467–471 (1999).
[CrossRef]

J. Vac. Sci. Technol. B (1)

S. W. Pang, T. Tamamura, M. Nakao, A. Ozawa, and H. Masuda, “Direct nano-printing on Al substrate using a SiC mold,” J. Vac. Sci. Technol. B16(3), 1145–1149 (1998).
[CrossRef]

Mater. Chem. Phys. (1)

O. P. Chakrabarti, P. K. Das, and J. Mukerji, “Growth of SiC particles in reaction sintered SiC,” Mater. Chem. Phys.67(1–3), 199–202 (2001).
[CrossRef]

Mater. Manuf. Process. (1)

H. Cheng, Z. Feng, Y. Wang, and S. Lei, “Magnetorheological finishing of SiC aspheric mirrors,” Mater. Manuf. Process.20(6), 917–931 (2005).
[CrossRef]

Mater. Res. Innovations (1)

D. A. Ersoy, M. J. McNallan, and Y. Gogotsi, “Carbon coatings produced by high temperature chlorination of silicon carbide ceramics,” Mater. Res. Innovations5(2), 55–62 (2001).
[CrossRef]

Opt. Express (1)

Proc. SPIE (1)

S. Suyama, Y. Itoh, K. Tsuno, and K. Ohno, “Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide,” Proc. SPIE5868, 58680E, 58680E-10 (2005).
[CrossRef]

Rev. Sci. Instrum. (1)

K. Yamauchi, H. Mimura, K. Inagaki, and Y. Mori, “Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining,” Rev. Sci. Instrum.73(11), 4028–4033 (2002).
[CrossRef]

Other (2)

K. Yamamura, Y. Yamamoto, and H. Deng, “Preliminary Study on Chemical Figuring and Finishing of Sintered SiC Substrate Using Atmospheric Pressure Plasma,” in 45th CIRP Conference on Manufacturing Systems 2012 3, 335–339 (2012).

J. S. Williams, B. Haberl, and J. E. Bradby, “Nanoindentation of ion implanted and deposited amorphous silicon,” MRS Online Proceedings Library 843, T6.3.1/R10.3.1- T6.3.5/R10.3.5 (2005),DOI: http://dx.doi.org/10.1557/PROC-843-T6.3/R10.3 .

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