Abstract

Novel surface-emitting optically pumped semiconductor lasers have demonstrated >1 W modelocked and >100 W continuous wave (cw) average output power. The modelocked integrated external-cavity surface emitting laser (MIXSEL) combines the gain of vertical-external-cavity surface-emitting lasers (VECSELs) with the saturable absorber of a semiconductor saturable absorber mirror (SESAM) in one single semiconductor structure. This unique concept allows for stable and self-starting passive modelocking in a simple straight cavity. With quantum-dot based absorbers, record-high average output power was demonstrated previously, however the pulse duration was limited to 17 ps so far. Here, we present the first femtosecond MIXSEL emitting pulses with a duration as short as 620 fs at 4.8 GHz repetition rate and 101 mW average output power. The novel MIXSEL structure relies on a single low temperature grown quantum-well saturable absorber with a low saturation fluence and fast recovery dynamics. A detailed characterization of the key modelocking parameters of the absorber and the challenges for absorber integration into the MIXSEL structure are discussed.

© 2013 Optical Society of America

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
    [CrossRef]
  2. B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
    [CrossRef] [PubMed]
  3. B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
    [CrossRef]
  4. U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
    [CrossRef]
  5. C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
    [CrossRef] [PubMed]
  6. D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
    [CrossRef]
  7. M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
    [CrossRef] [PubMed]
  8. M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
    [CrossRef]
  9. K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
    [CrossRef] [PubMed]
  10. P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
    [CrossRef]
  11. A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
    [CrossRef]
  12. V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
    [CrossRef]
  13. D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
    [CrossRef]
  14. D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
    [CrossRef] [PubMed]
  15. B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
    [CrossRef] [PubMed]
  16. V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
    [CrossRef]
  17. S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
    [CrossRef]
  18. O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
    [CrossRef]
  19. http://www.ulp.ethz.ch/research/VecselMixsel/Overview”
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    [CrossRef] [PubMed]
  21. V. J. Wittwer, O. D. Sieber, M. Mangold, M. Hoffmann, C. J. Saraceno, M. Golling, B. W. Tilma, T. Südmeyer, and U. Keller, “First MIXSEL with a Quantum Well Saturable Absorber: Shorter Pulse Durations and Higher Repetition Rates,” in CLEO US 2012(San Jose, 2012).
  22. R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
    [CrossRef]
  23. M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
    [CrossRef] [PubMed]
  24. R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
    [CrossRef]
  25. D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express16(10), 7571–7579 (2008).
    [CrossRef] [PubMed]
  26. A. Gosteva, M. Haiml, R. Paschotta, and U. Keller, “Noise-related resolution limit of dispersion measurements with white-light interferometers,” J. Opt. Soc. Am. B22(9), 1868–1874 (2005).
    [CrossRef]

2013

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

2012

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

2011

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

2010

2009

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

2008

2007

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

2006

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

2005

2002

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

1997

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

1996

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Apostolopoulos, V.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Aschwanden, A.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

Aus der Au, J.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Barbarin, Y.

Beere, H. E.

Bellancourt, A. R.

Bellancourt, A.-R.

D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express16(10), 7571–7579 (2008).
[CrossRef] [PubMed]

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Braun, B.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Calvez, S.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
[CrossRef]

Dawson, M. D.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
[CrossRef]

Ebling, D.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Elsmere, S. P.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Farrer, I.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Fluck, R.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Garnache, A.

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

Gini, E.

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

Golling, M.

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

Gosteva, A.

Griebner, U.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Guina, M.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
[CrossRef]

Hader, J.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Haiml, M.

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Häring, R.

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

Hastie, J. E.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
[CrossRef]

Heinen, B.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Hoffmann, M.

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
[CrossRef] [PubMed]

Hönninger, C.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Hoogland, S.

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

Iwaniuk, D.

Jung, I. D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Kärtner, F. X.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Keller, U.

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express16(10), 7571–7579 (2008).
[CrossRef] [PubMed]

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

A. Gosteva, M. Haiml, R. Paschotta, and U. Keller, “Noise-related resolution limit of dispersion measurements with white-light interferometers,” J. Opt. Soc. Am. B22(9), 1868–1874 (2005).
[CrossRef]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Klopp, P.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Koch, M.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Koch, S. W.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Kopf, D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Krestnikov, I. L.

Kunert, B.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Livshits, D. A.

Lorenser, D.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Maas, D. J. H. C.

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express16(10), 7571–7579 (2008).
[CrossRef] [PubMed]

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Mangold, M.

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

Marchese, S. V.

Matuschek, N.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Mihoubi, Z.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Moloney, J. V.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Morier-Genoud, F.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

Okhotnikov, O. G.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
[CrossRef]

Pallmann, W. P.

Paschotta, R.

A. Gosteva, M. Haiml, R. Paschotta, and U. Keller, “Noise-related resolution limit of dispersion measurements with white-light interferometers,” J. Opt. Soc. Am. B22(9), 1868–1874 (2005).
[CrossRef]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

Quarterman, A. H.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Resan, B.

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

Ritchie, D. A.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Rudin, B.

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express16(10), 7571–7579 (2008).
[CrossRef] [PubMed]

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Rutz, A.

Scheller, M.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Sieber, O.

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

Sieber, O. D.

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

Sparenberg, M.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Stolz, W.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Sudmeyer, T.

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

Südmeyer, T.

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express16(10), 7571–7579 (2008).
[CrossRef] [PubMed]

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett.33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

Tilma, B.

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

Tilma, B. W.

Tropper, A.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Tropper, A. C.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

Unold, H. J.

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

van der Linden, R.

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

Wang, T. L.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Weber, A.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Weingarten, K. J.

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Weyers, M.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Wilcox, K. G.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Wittwer, V.

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

Wittwer, V. J.

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

Zaugg, C. A.

Zorn, M.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Appl. Phys. B

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

O. Sieber, M. Hoffmann, V. Wittwer, M. Mangold, M. Golling, B. Tilma, T. Sudmeyer, and U. Keller, “Experimentally verified pulse formation model for high-power femtosecond VECSELs,” Appl. Phys. B (2013).
[CrossRef]

R. Paschotta, R. Häring, U. Keller, A. Garnache, S. Hoogland, and A. C. Tropper, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B75(4-5), 445–451 (2002).
[CrossRef]

Appl. Phys. Lett.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Electron. Lett.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

V. J. Wittwer, M. Mangold, M. Hoffmann, O. D. Sieber, M. Golling, T. Sudmeyer, and U. Keller, “High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation,” Electron. Lett.48(18), 1144–1145 (2012).
[CrossRef]

IEEE J. Quantum Electron.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

IEEE Photon. J.

V. J. Wittwer, R. van der Linden, B. W. Tilma, B. Resan, K. J. Weingarten, T. Sudmeyer, and U. Keller, “Sub-60-fs Timing Jitter of a SESAM Modelocked VECSEL,” IEEE Photon. J.5(1), 1400107 (2013).
[CrossRef]

IEEE Photon. Technol. Lett.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

J. Opt. Soc. Am. B

Laser Photon. Rev.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009).
[CrossRef]

Nat. Photonics

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Opt. Express

D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express16(10), 7571–7579 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express16(23), 18646–18656 (2008).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, D. J. H. C. Maas, V. J. Wittwer, M. Golling, T. Südmeyer, and U. Keller, “Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs,” Opt. Express18(10), 10143–10153 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

M. Mangold, V. J. Wittwer, O. D. Sieber, M. Hoffmann, I. L. Krestnikov, D. A. Livshits, M. Golling, T. Südmeyer, and U. Keller, “VECSEL gain characterization,” Opt. Express20(4), 4136–4148 (2012).
[CrossRef] [PubMed]

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, “Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach,” Opt. Express20(25), 27915–27921 (2012).
[CrossRef] [PubMed]

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, and W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

Opt. Lett.

Other

http://www.ulp.ethz.ch/research/VecselMixsel/Overview”

V. J. Wittwer, O. D. Sieber, M. Mangold, M. Hoffmann, C. J. Saraceno, M. Golling, B. W. Tilma, T. Südmeyer, and U. Keller, “First MIXSEL with a Quantum Well Saturable Absorber: Shorter Pulse Durations and Higher Repetition Rates,” in CLEO US 2012(San Jose, 2012).

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Figures (4)

Fig. 1
Fig. 1

a) Comparison of normalized recovery dynamics of different saturable absorbers: slow QD-absorber in previous MIXSEL [15, 16] (blue), fast QD-SESAM used in [7] (green) and novel fast QW-absorber (red); b) Overview of average output power versus pulse duration for different fundamentally modelocked VECSELs and MIXSELs: First femtosecond operation of MIXSEL (black circle) with fast QW-absorber (dashed black line) [19].

Fig. 2
Fig. 2

MIXSEL concept: a) The straight cavity is formed by the MIXSEL chip and a curved output coupler. The flip-chip processed MIXSEL-chip is optically pumped under an angle of 45°. b) The 6.9-µm-thick MIXSEL semiconductor layer stack consists of a 24-pair distributed Bragg reflector (DBR) for the lasing wavelength and a 9-pair DBR for the pump wavelength. In between the DBRs, we placed a single InGaAs quantum well (QW) saturable absorber. The active region consists of 10 compressively strained InGaAs QWs embedded in GaAs for pump absorption. On top, a hybrid semiconductor/fused silica anti-reflection mirror section ensures low pump light reflection and optimized group-delay dispersion (GDD).

Fig. 3
Fig. 3

Key modelocking parameters: a) Characterization of saturable absorber in SESAM: detuned single QW is designed for operation temperatures of 60-80°C to achieve 1-2% modulation depth near the bandedge at 960 nm; b) Nonlinear characterization of the absorber with 1.6-ps-pulses at 960 nm: elevated temperatures result in desired regime of modulation depths ΔR≈ 1-2%, with decreasing saturation fluences from 17 to 7 µJ/cm2; c) Measurement of the bitemporal recovery dynamics of the absorber at 65°C and with 131-fs-pulses near 960 nm: fast recovery time τfast ≈ 380 fs with amplitude of 62% compared to slow recovery time τslow ≈ 4.1 ps; d) measurement of group delay dispersion (GDD) of the MIXSEL chip around operation wavelength of 960 nm (dots) compared to simulation (solid line) based on the designed structure with a slightly thicker fused silica (FS) layer of a few percent; positive GDD-regime favors stable modelocking with short pulse durations [18].

Fig. 4
Fig. 4

Femtosecond operation of a MIXSEL: a) intensity autocorrelation with sech2-fit yields a pulse duration of 620 fs; b) optical spectrum with a resolution bandwidth (RBW) of 0.5 nm centered at a wavelength of 967.7 nm with a bandwidth of 2.90 nm (FWHM), c) microwave spectrum with RBW of 300 Hz at repetition rate of 4.83 GHz and d) beam quality measurement confirming operation in fundamental transverse mode with M2 values of 1.05 ± 0.05 in two orthogonal lab frame directions.

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